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    Light-emitting element and the manufacturing method thereof
    1.
    发明授权
    Light-emitting element and the manufacturing method thereof 有权
    发光元件及其制造方法

    公开(公告)号：US08704257B2

    公开(公告)日：2014-04-22

    申请号：US13022098

    申请日：2011-02-07

    申请人： Shih-i Chen ,  Chia-Liang Hsu ,  Chiu-Lin Yao ,  Tzu-Chieh Hsu ,  Chien-Fu Huang

    发明人： Shih-i Chen ,  Chia-Liang Hsu ,  Chiu-Lin Yao ,  Tzu-Chieh Hsu ,  Chien-Fu Huang

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/38

    摘要： A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.

    摘要翻译： 发光元件包括用于发光的发光叠层和基板结构，包括：第一基板，设置在所述发光堆叠下方，并具有面向所述发光叠层的第一表面; 以及第二基板，其设置在所述发光堆叠下方并且具有面向所述发光叠层的第二表面; 以及形成在第一基板和第二基板之间并具有不垂直于第一表面的倾斜角度的反射层。

    Light-emitting device and manufacturing method thereof
    2.
    发明授权
    Light-emitting device and manufacturing method thereof 有权
    发光元件及其制造方法

    公开(公告)号：US08420418B2

    公开(公告)日：2013-04-16

    申请号：US12824422

    申请日：2010-06-28

    申请人： Tzu-Chieh Hsu

    发明人： Tzu-Chieh Hsu

    IPC分类号： H01L21/44

    CPC分类号： H01L33/20 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/48 ,  H01L24/97 ,  H01L33/0079 ,  H01L2221/68359 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    摘要： A method of fabricating a light emitting device comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface, forming a plurality of light emitting stack layers on the first major surface, forming an etching protection layer on the plurality of light emitting stack layers, forming a plurality of discontinuous holes or continuous lines on the substrate by a laser beam with the depth of 10˜150 μm, cleaving the substrate through the plurality of discontinuous holes or continuous lines, providing a adhesion layer on the second major surface of the substrate, and expanding the adhesion layer to form a plurality of separated light emitting device.

    摘要翻译： 一种制造发光器件的方法，包括：提供衬底，其中所述衬底包括第一主表面和与所述第一主表面相对的第二主表面，在所述第一主表面上形成多个发光堆叠层，形成 蚀刻保护层，通过深度为10〜150μm的激光束在基板上形成多个不连续的孔或连续的线，通过多个不连续的孔或连续的线切断基板， 在衬底的第二主表面上提供粘合层，并且使粘合层膨胀以形成多个分离的发光器件。

    Light-emitting device
    3.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08405106B2

    公开(公告)日：2013-03-26

    申请号：US12753551

    申请日：2010-04-02

    申请人： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

    发明人： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

    摘要： A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.

    摘要翻译： 一种发光器件，包括：具有第一导电类型半导体层的发光层叠层，形成在第一导电型半导体层上的发光层和形成在发光层上的第二导电型半导体层，其中， 第二导电类型半导体层的上表面是纹理表面; 形成在所述第二导电型半导体层的上表面的第一部分上的第一平坦化层; 形成在所述第一平坦化层上的第一透明导电氧化物层和所述第二导电类型半导体层的第二部分，所述第二导电类型半导体层包括与所述第一平坦化层接触的第一部分和具有与所述第二平坦化层接触的第一多个空腔的第二部分 导电型半导体层; 以及形成在第一透明导电氧化物层的第一部分上的第一电极。

    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF
    4.
    发明申请
    OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
    光电器件及其制造方法

    公开(公告)号：US20120256164A1

    公开(公告)日：2012-10-11

    申请号：US13528059

    申请日：2012-06-20

    申请人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    IPC分类号： H01L33/06

    CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44

    摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.

    摘要翻译： 光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。 第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。 半导体系统在第一窗口层和第二窗口层之间。 第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。 提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。 窗口层具有与半导体系统不同的半导体材料。 选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。

    Optoelectronic device and the manufacturing method thereof
    6.
    发明授权
    Optoelectronic device and the manufacturing method thereof 有权
    光电子器件及其制造方法

    公开(公告)号：US08207550B2

    公开(公告)日：2012-06-26

    申请号：US13021307

    申请日：2011-02-04

    申请人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    IPC分类号： H01L33/58 ,  H01L33/60

    CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44

    摘要： One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.

    摘要翻译： 本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。 本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。 该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层，其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层，从而形成窗口层和半导体系统之间的宽度差，并且宽度差异大于1微米。

    Semiconductor device structures and the separating methods thereof
    9.
    发明授权
    Semiconductor device structures and the separating methods thereof 有权
    半导体器件结构及其分离方法

    公开(公告)号：US08765504B2

    公开(公告)日：2014-07-01

    申请号：US13490992

    申请日：2012-06-07

    申请人： Shih-I Chen ,  Ching-Pei Lin ,  Tzu-Chieh Hsu ,  Chia-Liang Hsu

    发明人： Shih-I Chen ,  Ching-Pei Lin ,  Tzu-Chieh Hsu ,  Chia-Liang Hsu

    IPC分类号： H01L21/00 ,  H01L29/18 ,  H01L33/00 ,  H01L29/205

    CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

    摘要： A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.

    摘要翻译： 分离半导体器件结构的方法包括提供具有第一表面和与第一表面相对的第二表面的衬底的步骤; 在所述第一表面上形成多个半导体外延堆叠; 形成覆盖所述半导体外延叠层并暴露所述第一表面的一部分或覆盖对应于所述半导体外延叠层的所述第二表面的图案化抗蚀剂层; 进行物理蚀刻处理以直接地将所述基板服务于所述第一表面或未被所述图案化抗蚀剂层覆盖的第二表面的区域; 以及分离半导体外延叠层以形成多个半导体器件结构。

    Optoelectronic device and the manufacturing method thereof
    10.
    发明授权
    Optoelectronic device and the manufacturing method thereof 有权
    光电子器件及其制造方法

    公开(公告)号：US08474233B2

    公开(公告)日：2013-07-02

    申请号：US13528059

    申请日：2012-06-20

    申请人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang

    IPC分类号： H01L33/06

    CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44

    摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.

    摘要翻译： 光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。 第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。 半导体系统在第一窗口层和第二窗口层之间。 第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。 提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。 窗口层具有与半导体系统不同的半导体材料。 选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。