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    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
    2.
    发明授权
    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof 有权
    用于通孔填充和光刻应用的抗反射涂层及其制备方法

    公开(公告)号：US08992806B2

    公开(公告)日：2015-03-31

    申请号：US13217706

    申请日：2011-08-25

    申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

    发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

    IPC分类号： C09K3/00 ,  G03F7/11 ,  C09D183/04 ,  G03F7/075 ,  C09D183/08 ,  G03F7/09

    CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

    摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

    摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

    Antireflective Coatings for Via Fill and Photolithography Applications and Methods of Preparation Thereof
    3.
    发明申请
    Antireflective Coatings for Via Fill and Photolithography Applications and Methods of Preparation Thereof 审中-公开
    用于通孔填充和光刻的抗反射涂层及其制备方法

    公开(公告)号：US20120001135A1

    公开(公告)日：2012-01-05

    申请号：US13217706

    申请日：2011-08-25

    申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodin ,  Victor Lu ,  Roger Leung

    发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodin ,  Victor Lu ,  Roger Leung

    IPC分类号： C09K3/00

    CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

    摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

    摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
    4.
    发明申请
    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof 有权
    用于通孔填充和光刻应用的抗反射涂层及其制备方法

    公开(公告)号：US20050171277A1

    公开(公告)日：2005-08-04

    申请号：US10717028

    申请日：2003-11-18

    申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Victor Lu ,  Roger Leung ,  Mark Fradkin ,  Makarem Hussein ,  Michael Goodner

    发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Victor Lu ,  Roger Leung ,  Mark Fradkin ,  Makarem Hussein ,  Michael Goodner

    IPC分类号： C08G20060101 ,  C08L83/04 ,  C09D183/04 ,  C09D183/08 ,  G03F7/09

    CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

    摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

    摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

    Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture
    6.
    发明申请
    Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture 审中-公开
    具有改进的针对集成电路应用的无机抗反射涂层材料的蚀刻选择性的多孔二氧化硅电介质以及制造方法

    公开(公告)号：US20050136687A1

    公开(公告)日：2005-06-23

    申请号：US10741272

    申请日：2003-12-19

    申请人： Victor Lu ,  Bo Li ,  Deling Zhou ,  Roger Leung ,  Paul Apen

    发明人： Victor Lu ,  Bo Li ,  Deling Zhou ,  Roger Leung ,  Paul Apen

    IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/76 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/31695 ,  H01L21/7682 ,  H01L2221/1047

    摘要： A composition comprising a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A method of producing a nanoporous silica dielectric film having a void volume of about 30% or less based on the total volume of the nanoporous silica dielectric film, and having a dielectric constant of about 2.2 or less. A silicon containing pre-polymer is provided, which is capable of forming a film having a dielectric constant of about 2.8 or less. It is then combined with a porogen, and a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles, to thereby form a composition. A layer of the composition is coated on to a substrate, crosslinked to form a gelled film, and heated to remove substantially all of the porogen and to thereby produce a nanoporous silica dielectric film of the invention.

    摘要翻译： 一种组合物，其包含基于纳米多孔硅介电膜的总体积具有约30％或更小的空隙体积并且具有约2.2或更小的介电常数的纳米多孔硅介电膜。 基于纳米多孔硅介电膜的总体积，并且具有约2.2或更小的介电常数，制备具有约30％或更小的空隙体积的纳米多孔二氧化硅电介质膜的方法。 提供含硅预聚物，其能够形成介电常数为约2.8或更小的膜。 然后将其与致孔剂和选自鎓化合物和亲核试剂的无金属离子的催化剂组合，从而形成组合物。 将一层组合物涂布在基材上，交联以形成凝胶膜，并加热以除去基本上所有的致孔剂，从而制备本发明的纳米孔硅石介电膜。

    Repairing damage to low-k dielectric materials using silylating agents
    7.
    发明申请
    Repairing damage to low-k dielectric materials using silylating agents 有权
    使用硅烷化剂修复对低k电介质材料的损坏

    公开(公告)号：US20050095840A1

    公开(公告)日：2005-05-05

    申请号：US10940682

    申请日：2004-09-15

    申请人： Anil Bhanap ,  Teresa Ramos ,  Nancy Iwamoto ,  Roger Leung ,  Ananth Naman

    发明人： Anil Bhanap ,  Teresa Ramos ,  Nancy Iwamoto ,  Roger Leung ,  Ananth Naman

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/31058 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801

    摘要： A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.

    摘要翻译： 用于恢复已进行蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。 这些膜在集成电路的制造中用作绝缘材料，以确保这些膜中的低和稳定的介电性能。 该方法阻止了这些膜中应力诱发的空隙的形成。 通过使有机硅酸盐玻璃电介质膜经受蚀刻剂或灰化试剂以形成通孔和沟槽，以除去至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。 之后通过通孔和沟槽填充金属并进行退火处理。 在将薄膜进行蚀刻剂或灰化试剂之后，但在进行退火处理之前，使膜与增韧剂组合物接触以还原一些含碳部分并增加有机硅酸盐玻璃电介质膜的疏水性。

    Interlayer adhesion promoter for low k materials
    10.
    发明申请
    Interlayer adhesion promoter for low k materials 审中-公开
    用于低k材料的层间粘合促进剂

    公开(公告)号：US20050173803A1

    公开(公告)日：2005-08-11

    申请号：US10517575

    申请日：2002-09-20

    申请人： Victor Lu ,  Roger Leung ,  Wenya Fan ,  Ananth Naman ,  De-Ling Zhou

    发明人： Victor Lu ,  Roger Leung ,  Wenya Fan ,  Ananth Naman ,  De-Ling Zhou

    IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/4763 ,  H01L23/48 ,  H01L29/40

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31695 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.

    摘要翻译： 本发明涉及多层电介质结构的制造以及包括这些结构的半导体器件和集成电路。 本发明的结构通过将多孔电介质层通过中间粘合促进介电层粘附到基本上无孔的覆盖层来制备。 制备多层电介质结构，其具有孔隙率为约10％以上的多孔介电层; b）多孔电介质层上的粘附促进介电层，其孔隙率为约10％或更小; 和在粘附促进电介质层上的基本上无孔的覆盖层。