利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

54 条记录 (耗时 0.036 秒)

    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
    1.
    发明授权
    Antireflective coatings for via fill and photolithography applications and methods of preparation thereof 有权
    用于通孔填充和光刻应用的抗反射涂层及其制备方法

    公开(公告)号：US08992806B2

    公开(公告)日：2015-03-31

    申请号：US13217706

    申请日：2011-08-25

    申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

    发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

    IPC分类号： C09K3/00 ,  G03F7/11 ,  C09D183/04 ,  G03F7/075 ,  C09D183/08 ,  G03F7/09

    CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

    摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

    摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

    Healing detrimental bonds in deposited materials
    4.
    发明授权
    Healing detrimental bonds in deposited materials 有权
    治疗沉积物中的有害键

    公开(公告)号：US07439179B2

    公开(公告)日：2008-10-21

    申请号：US11159506

    申请日：2005-06-22

    申请人： Michael D. Goodner

    发明人： Michael D. Goodner

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234

    摘要： A method for healing detrimental bonds in deposited materials, for example porous, low-k dielectric materials, including oxydatively processing a deposited material, processing the deposited material with a trialkyl group III compound, and processing in the presence of an alcohol. Also included in embodiments of the invention are materials with bonds healed by embodiments of the claimed method.

    摘要翻译： 一种用于在沉积材料中修复有害键的方法，例如多孔，低k电介质材料，包括氧化处理沉积材料，用三烷基III族化合物处理沉积材料，以及在醇存在下加工。 还包括在本发明的实施方案中的是具有通过所要求保护的方法的实施方案治愈的结合的材料。

    Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures
    9.
    发明授权
    Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures 有权
    使用牺牲膜和所得结构在电介质材料中形成气隙的方法

    公开(公告)号：US07595555B2

    公开(公告)日：2009-09-29

    申请号：US11360097

    申请日：2006-02-22

    申请人： James S. Clarke ,  Michael D. Goodner

    发明人： James S. Clarke ,  Michael D. Goodner

    IPC分类号： H01L21/00

    CPC分类号： H01L21/7682 ,  H01L21/76831 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming air gaps surrounding conductors in a dielectric layer, the dielectric layer comprising, for example, part of the interconnect structure of an integrated circuit device. The air gaps are formed, in part, by depositing a sacrificial material within a trench and/or via that have been formed in a dielectric layer, and the sacrificial material is ultimately removed after metal deposition to create the air gaps. A porous dielectric cap may be deposited over the dielectric layer, and the sacrificial material may be removed through this porous dielectric layer. Other embodiments are described and claimed.

    摘要翻译： 在介电层中形成围绕导体的空气间隙的方法，该介电层包括例如集成电路器件的互连结构的一部分。 气隙部分地通过在已经形成在电介质层中的沟槽和/或通孔内沉积牺牲材料而形成，并且在金属沉积之后最终去除牺牲材料以产生气隙。 可以在电介质层上沉积多孔电​​介质盖，并且可以通过该多孔介电层去除牺牲材料。 描述和要求保护其他实施例。