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    Unique passivation technique for a CVD blocker plate to prevent particle formation
    3.
    发明授权
    Unique passivation technique for a CVD blocker plate to prevent particle formation 失效
    用于防止颗粒形成的CVD阻断板的独特钝化技术

    公开(公告)号：US07857947B2

    公开(公告)日：2010-12-28

    申请号：US11459531

    申请日：2006-07-24

    申请人： Alan A. Ritchie ,  Wei Ti Lee ,  Ted Guo

    发明人： Alan A. Ritchie ,  Wei Ti Lee ,  Ted Guo

    IPC分类号： C23C14/34 ,  C23C16/00

    CPC分类号： C23C16/45561 ,  C23C14/165 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45591 ,  Y10T29/497 ,  Y10T29/49826 ,  Y10T137/0491 ,  Y10T137/9029

    摘要： Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

    摘要翻译： 提供化学气相沉积室的阻挡板和处理阻挡板的方法。 阻挡板限定穿过其中的多个孔，并且具有至少约99.5％纯度的上表面和下表面，其最大限度地减小阻挡板上的污染颗粒的成核。 可以在阻挡板的上表面和下表面上形成物理气相沉积涂层，例如铝物理气相沉积涂层。 还提供了包括其上具有物理气相沉积涂层的阻挡板的化学气相沉积室。

    Liner materials
    5.
    发明授权
    Liner materials 失效
    衬里材料

    公开(公告)号：US06528180B1

    公开(公告)日：2003-03-04

    申请号：US09577705

    申请日：2000-05-23

    申请人： Wei Ti Lee ,  Ted Guo ,  Gongda Yao

    发明人： Wei Ti Lee ,  Ted Guo ,  Gongda Yao

    IPC分类号： H01L2940

    CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76877 ,  Y10T428/12535 ,  Y10T428/12611 ,  Y10T428/12743 ,  Y10T428/12806 ,  Y10T428/26

    摘要： A method for metallizing integrated circuits is disclosed. In one aspect, an integrated circuit is metallized by depositing liner material on a substrate followed by one or more metal layers. The liner material is selected from the group of tantalum (Ta), tantalum nitride (TaN), niobium (Nb), niobium nitride (NbN), vanadium (V), vanadium nitride (VN), and combinations thereof. The liner material is preferably conformably deposited on the substrate using physical vapor deposition (PVD). The one or more metal layers are deposited on the barrier layer using chemical vapor deposition (CVD), physical vapor deposition (PVD), or a combination of both CVD and PVD.

    摘要翻译： 公开了一种金属化集成电路的方法。 在一个方面，集成电路通过将衬垫材料沉积在衬底上而后接一个或多个金属层进行金属化。 衬垫材料选自钽（Ta），氮化钽（TaN），铌（Nb），氮化铌（NbN），钒（V），氮化钒（VN）及其组合。 优选使用物理气相沉积（PVD）将衬垫材料适当地沉积在衬底上。 使用化学气相沉积（CVD），物理气相沉积（PVD）或CVD和PVD的组合将一个或多个金属层沉积在阻挡层上。

    Aluminum sputtering while biasing wafer
    6.
    发明授权
    Aluminum sputtering while biasing wafer 失效
    铝溅射同时偏置晶圆

    公开(公告)号：US07378002B2

    公开(公告)日：2008-05-27

    申请号：US11209328

    申请日：2005-08-23

    申请人： Wei Ti Lee ,  Ted Guo ,  Sang-Ho Yu

    发明人： Wei Ti Lee ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： C23C14/35 ,  H01L21/44

    CPC分类号： C23C14/185 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345

    摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.

    摘要翻译： 一种铝溅射工艺，包括RF偏置晶片和两步铝填充工艺和装置，用于在两个明显不同的条件下，优选在两个不同的等离子体溅射反应器中通过溅射将铝填充到窄通孔中。 第一步包括将大部分电离铝原子溅射到相对冷的晶片上，例如保持在小于150℃，并且相当高的偏压以将铝原子吸引到窄孔中并蚀刻突出端。 第二步包括在相对温暖的晶片上的更中性的溅射，例如 保持在大于250℃，并且基本上无偏差以提供更多的各向同性和均匀的铝通量。 围绕铝靶的背面扫描的磁控管可能在第一步骤中相对较小并且不平衡，而在第二步中相对较大且平衡。

    Aluminum contact integration on cobalt silicide junction
    7.
    发明授权
    Aluminum contact integration on cobalt silicide junction 失效
    硅化钴接头上的铝接触集成

    公开(公告)号：US07867900B2

    公开(公告)日：2011-01-11

    申请号：US12240816

    申请日：2008-09-29

    申请人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    发明人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

    摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

    ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION
    8.
    发明申请
    ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION 失效
    铝接点集成在钴硅酮结上

    公开(公告)号：US20090087983A1

    公开(公告)日：2009-04-02

    申请号：US12240816

    申请日：2008-09-29

    申请人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    发明人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

    摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

    Plasma-enhanced chemical vapor deposition of a metal nitride layer
    9.
    发明授权
    Plasma-enhanced chemical vapor deposition of a metal nitride layer 失效
    金属氮化物层的等离子体增强化学气相沉积

    公开(公告)号：US06656831B1

    公开(公告)日：2003-12-02

    申请号：US09491563

    申请日：2000-01-26

    申请人： Wei Ti Lee ,  Ted Guo

    发明人： Wei Ti Lee ,  Ted Guo

    IPC分类号： H01L214763

    CPC分类号： C23C16/34 ,  H01L21/28556

    摘要： A refractory metal layer is deposited onto a substrate having high aspect ratio contracts or vias formed thereon. Next, a plasma-enhanced CVD refractory metal nitride layer is deposited on the refractory metal layer. Then, a metal layer is deposited over the metal nitride layer. The resulting metal layer is substantially void free and has reduced resistivity, and has greater effective line width. Plasma-enhanced chemical vapor deposition of the metal nitride layer comprises forming a plasma of a metal-containing compound, a nitrogen-containing gas, and a hydrogen-gas to deposit a metal nitride layer on a substrate. The metal nitride layer is preferably treated with nitrogen plasma to densify the metal nitride film. The process is preferably carried out in an integrated processing system that generally includes various chambers so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without exposure to possible contaminants.

    摘要翻译： 难熔金属层沉积在具有高纵横比的合金或其上形成的通孔的基底上。 接下来，在难熔金属层上沉积等离子体增强CVD难熔金属氮化物层。 然后，在金属氮化物层上沉积金属层。 所得金属层基本上无空隙并具有降低的电阻率，并且具有更大的有效线宽度。 金属氮化物层的等离子体增强化学气相沉积包括形成含金属化合物，含氮气体和氢气的等离子体，以在基板上沉积金属氮化物层。 金属氮化物层优选用氮等离子体处理以使金属氮化物膜致密化。 该方法优选在通常包括各种室的一体化处理系统中进行，使得一旦将基板引入真空环境中，通孔和触点的金属化在不暴露于可能的污染物的情况下发生。

    CVD-PVD deposition process
    10.
    发明授权
    CVD-PVD deposition process 有权
    CVD-PVD沉积工艺

    公开(公告)号：US06716733B2

    公开(公告)日：2004-04-06

    申请号：US10170128

    申请日：2002-06-11

    申请人： Wei Ti Lee ,  Ted Guo

    发明人： Wei Ti Lee ,  Ted Guo

    IPC分类号： H01L213205

    CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882

    摘要： The present invention relates to a method for depositing metal layers on substrates with improved surface morphology. According to one aspect of the invention, a metal is deposited by chemical vapor deposition on a substrate having an aperture formed therein. A metal is then deposited on the substrate by physical vapor deposition performed with a low substrate temperature. The substrate is then heated. The substrate may then receive a metal deposited by physical vapor deposition performed at a high temperature and an additional heating step. The aperture of the resulting substrate is filled with metal and is substantially void-free and has a smooth surface morphology.

    摘要翻译： 本发明涉及一种在具有改进的表面形态的基底上沉积金属层的方法。 根据本发明的一个方面，通过化学气相沉积将金属沉积在其上形成有孔的基底上。 然后通过在低衬底温度下进行的物理气相沉积将金属沉积在衬底上。 然后将基材加热。 然后，基板可以接收通过在高温和附加加热步骤进行的物理气相沉积沉积的金属。 所得衬底的孔径被填充金属，并且基本上无空隙并且具有光滑的表面形态。