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    Process for manufacturing a concentrate of a palladium-tin colloidal catalyst
    3.
    发明授权
    Process for manufacturing a concentrate of a palladium-tin colloidal catalyst 失效
    制备钯 - 锡胶体催化剂浓缩物的方法

    公开(公告)号：US4593016A

    公开(公告)日：1986-06-03

    申请号：US701585

    申请日：1985-02-14

    申请人： William J. Amelio ,  Dae Y. Jung ,  Voya Markovich ,  Carlos J. Sambucetti

    发明人： William J. Amelio ,  Dae Y. Jung ,  Voya Markovich ,  Carlos J. Sambucetti

    IPC分类号： H05K3/18 ,  B01J23/00 ,  B01J23/62 ,  C23C18/28 ,  H01B13/00 ,  B01J23/14 ,  B01J23/44

    CPC分类号： B01J23/626

    摘要： A concentrate of a palladium-tin colloidal catalyst is obtained by dissolving stannous chloride in HCl, diluting the solution with HCl and then further diluting the solution with deionized water to thereby obtain a diluted stannous chloride solution. This solution is cooled to room temperature or below. A palladium chloride solution is obtained by dissolving palladium chloride in HCl which in turn is also cooled to room temperature or below. The palladium chloride solution is gradually added to the stannous chloride solution and mixed at about room temperature in order to obtain a homogeneous solution. The temperature of the solution is then gradually increased to about 105.degree. C. to about 110.degree. C. and maintained at that temperature for sufficient time to obtain a homogeneous solution of substantially uniform colloidal particles. The solution of colloidal particles is slowly cooled to about room temperature.

    摘要翻译： 通过将氯化亚锡溶解在HCl中，用HCl稀释溶液，然后用去离子水进一步稀释溶液，得到稀释的氯化亚锡溶液，得到钯 - 锡胶体催化剂的浓缩物。 将该溶液冷却至室温或以下。 通过将氯化钯溶解在HCl中而获得氯化钯溶液，HCl又被冷却至室温或更低。 将氯化钯溶液逐渐加入到氯化亚锡溶液中，并在约室温下混合，得到均匀的溶液。 然后将溶液的温度逐渐升高至约105℃至约110℃，并在该温度下保持足够的时间以获得基本均匀的胶体颗粒的均匀溶液。 将胶体颗粒溶液缓慢冷却至约室温。

    Method for conditioning a surface of a dielectric substrate for electroless plating
    6.
    发明授权
    Method for conditioning a surface of a dielectric substrate for electroless plating 失效
    用于调理用于无电镀的电介质基板的表面的方法

    公开(公告)号：US4554182A

    公开(公告)日：1985-11-19

    申请号：US696879

    申请日：1985-01-31

    申请人： James R. Bupp ,  Gary K. Lemon ,  Voya Markovich ,  Carlos J. Sambucetti ,  Stephen L. Tisdale ,  Donna J. Trevitt

    发明人： James R. Bupp ,  Gary K. Lemon ,  Voya Markovich ,  Carlos J. Sambucetti ,  Stephen L. Tisdale ,  Donna J. Trevitt

    IPC分类号： C23C18/28 ,  H05K3/38 ,  C23C18/24

    CPC分类号： H05K3/381 ,  C23C18/28

    摘要： Method for electroless plating metals, such as copper, onto non-conductive substrate surfaces. The method comprises bringing the surfaces into contact with an aqueous composition containing H.sub.2 SO.sub.4 and a multifunctional cationic copolymer containing at least two available cationic moieties and then activating the surfaces by treating them with a colloidal solution containing palladium chloride, stannous chloride and HCl.The inventive method is particularly useful in processes for producing metal circuits on substrates of glass, thermoplastics and thermosetting resins, such as epoxy cards and boards. The method is also applied in reworking substrates having already undergone copper plating and having been rejected due to failures.

    摘要翻译： 无电镀金属（如铜）在非导电基材表面上的方法。 该方法包括使表面与含有H 2 SO 4的水性组合物和含有至少两种可得到的阳离子部分的多官能阳离子共聚物接触，然后通过用含氯化钯，氯化亚锡和HCl的胶体溶液处理表面来活化表面。 本发明的方法特别适用于在玻璃，热塑性塑料和热固性树脂（例如环氧树脂卡和板）的基底上生产金属电路的方法。 该方法也适用于已经经过镀铜并由于故障而被拒绝的基板。

    Method for providing an electroless copper plating bath in the take mode
    8.
    发明授权
    Method for providing an electroless copper plating bath in the take mode 失效
    在取样模式下提供化学镀铜浴的方法

    公开(公告)号：US4534797A

    公开(公告)日：1985-08-13

    申请号：US567723

    申请日：1984-01-03

    申请人： David E. King ,  Voya Markovich ,  Carlos J. Sambucetti ,  Stephen L. Tisdale ,  Donna J. Trevitt

    发明人： David E. King ,  Voya Markovich ,  Carlos J. Sambucetti ,  Stephen L. Tisdale ,  Donna J. Trevitt

    IPC分类号： H05K3/18 ,  C23C18/40 ,  C23C3/02

    CPC分类号： C23C18/40

    摘要： An electroless copper plating bath which is in the take mode is provided by determining the amount in the bath of at least four of the components selected from the group of oxygen, reducing agent, cyanide salt, cupric salt, and complexing agent; solving the equation:R=(CABD)/Ewherin C is the concentration of cupric salt, A is the concentration of reducing agent, B is the concentration of oxygen, D is the concentration of cyanide salt, E is the concentration of complexing agent, and R is a unitless number.The bath is provided with quantities of the above ingredients so that R in the equation is between about 5 and about 15.

    摘要翻译： 通过确定浴中至少四种选自氧，还原剂，氰化物盐，铜盐和络合剂的组分中的量来提供处于取样模式的化学镀铜浴; 求解方程：R =（CABD）/ E，C是铜盐的浓度，A是还原剂的浓度，B是氧的浓度，D是氰化物盐的浓度，E是络合剂的浓度 ，R是无单位数。 浴中提供了上述成分的数量，使得方程式中的R为约5至约15。

    Reduced electromigration and stressed induced migration of copper wires by surface coating
    9.
    发明授权
    Reduced electromigration and stressed induced migration of copper wires by surface coating 有权
    通过表面涂层减少电迁移和应力诱导的铜线迁移

    公开(公告)号：US07468320B2

    公开(公告)日：2008-12-23

    申请号：US11183773

    申请日：2005-07-19

    申请人： Chao-Kun Hu ,  Robert Rosenberg ,  Judith M. Rubino ,  Carlos J. Sambucetti ,  Anthony K. Stamper

    发明人： Chao-Kun Hu ,  Robert Rosenberg ,  Judith M. Rubino ,  Carlos J. Sambucetti ,  Anthony K. Stamper

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76864 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The idea of the invention is to coat the free surface of patterned Cu conducting lines in on-chip interconnections (BEOL) wiring by a 1-20 nm thick metal layer prior to deposition of the interlevel dielectric. This coating is sufficiently thin so as to obviate the need for additional planarization by polishing, while providing protection against oxidation and surface, or interface, diffusion of Cu which has been identified by the inventors as the leading contributor to metal line failure by electromigration and thermal stress voiding. Also, the metal layer increases the adhesion strength between the Cu and dielectric so as to further increase lifetime and facilitate process yield. The free surface is a direct result of the CMP (chemical mechanical polishing) in a damascene process or in a dry etching process by which Cu wiring is patterned. It is proposed that the metal capping layer be deposited by a selective process onto the Cu to minimize further processing. We have used electroless metal coatings, such as CoWP, CoSnP and Pd, to illustrate significant reliability benefits, although chemical vapor deposition (CVD) of metals or metal forming compounds can be employed.

    摘要翻译： 本发明的想法是在沉积层间电介质之前，通过1-20nm厚的金属层将芯片上互连（BEOL）布线中的图案化Cu导线的自由表面涂覆。 该涂层足够薄，以便消除对通过抛光进行附加平面化的需要，同时提供了防止氧化和表面或Cu的扩散的保护，这已经被本发明人鉴定为导致金属线路故障的主要贡献者通过电迁移和热 压力消除。 此外，金属层增加了Cu和电介质之间的粘合强度，从而进一步增加寿命并且有助于工艺产量。 自由表面是在镶嵌工艺中的CMP（化学机械抛光）或通过图形化Cu布线的干蚀刻工艺的直接结果。 提出通过选择性方法将金属覆盖层沉积到Cu上以最小化进一步的加工。 尽管可以使用金属或金属形成化合物的化学气相沉积（CVD），但我们已经使用了无电金属涂层，例如CoWP，CoSnP和Pd来说明显着的可靠性优点。