SUBMOUNT AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    SUBMOUNT AND MANUFACTURING METHOD THEREOF 有权
    其制造方法及其制造方法

    公开(公告)号:US20120091496A1

    公开(公告)日:2012-04-19

    申请号:US13150034

    申请日:2011-06-01

    IPC分类号: H01L33/62

    摘要: A submount and a manufacturing method thereof are provided. The submount, on which at least a semiconductor die is disposed, is mounted on a circuit board. The submount includes a substrate made of a conductive material or a semiconducting material, a plurality of conductive film patterns, and an insulating film pattern. A surface of the substrate includes a die-bonding area and a plurality of conductive areas. The conductive film patterns are individually distributed in the respective conductive areas. The insulating film pattern is disposed between the conductive film pattern and the insulating film pattern, but is not disposed in the die-bonding area. Furthermore, the semiconductor die is disposed in the die-bonding area and is electrically connected with the conductive film patterns. Because the insulating film pattern is not being disposed in the die-bonding area of the submount, the submount structure has improved heat transfer efficiency.

    摘要翻译: 提供了一种基座及其制造方法。 至少设有半导体管芯的基座安装在电路板上。 底座包括由导电材料或半导体材料制成的衬底,多个导电膜图案和绝缘膜图案。 基板的表面包括芯片接合区域和多个导电区域。 导电膜图案分别分布在相应的导电区域中。 绝缘膜图案设置在导电膜图案和绝缘膜图案之间,但不设置在芯片接合区域中。 此外,半导体管芯设置在芯片接合区域中并与导电膜图案电连接。 由于绝缘膜图案不设置在基座的芯片接合区域中,所以基座结构具有改善的传热效率。

    SEMICONDUCTOR DEVICE PACKAGE WITH INSULATOR RING
    6.
    发明申请
    SEMICONDUCTOR DEVICE PACKAGE WITH INSULATOR RING 审中-公开
    带绝缘体环的半导体器件封装

    公开(公告)号:US20100013080A1

    公开(公告)日:2010-01-21

    申请号:US12565470

    申请日:2009-09-23

    IPC分类号: H01L23/498

    摘要: Embodiments provide a semiconductor device package and a method for fabricating thereof. The package includes a silicon substrate having a semiconductor device and a metal layer thereon; an insulator ring formed in the silicon substrate and surrounding a portion of a silicon material below the metal layer; and a conductive layer disposed below a backside of the silicon substrate and extended to contact the portion of the silicon material surrounded by the insulator ring below the metal layer.

    摘要翻译: 实施例提供一种半导体器件封装及其制造方法。 该封装包括其上具有半导体器件和金属层的硅衬底; 绝缘体环,形成在所述硅衬底中并围绕所述金属层下面的硅材料的一部分; 以及导电层,其布置在所述硅衬底的背面下方并且延伸以接触由所述金属层下面的所述绝缘体环包围的所述硅材料的所述部分。