公开(公告)号：US20120216266A1

公开(公告)日：2012-08-23

申请号：US13462822

申请日：2012-05-03

申请人： Xin WANG ,  Lee CHEN ,  John CHIONG

发明人： Xin WANG ,  Lee CHEN ,  John CHIONG

IPC分类号： H04L9/32 ,  G06F15/16 ,  G06F21/00

CPC分类号： H04L63/102 ,  H04L12/66 ,  H04L29/06 ,  H04L61/6022 ,  H04L61/6068 ,  H04L63/02 ,  H04L63/0281 ,  H04L63/04 ,  H04L63/08 ,  H04L63/0853 ,  H04L63/10 ,  H04L63/30 ,  H04L63/308 ,  H04L65/1003 ,  H04L65/1006 ,  H04L65/1069 ,  H04L65/4007 ,  H04L67/14 ,  H04L67/141 ,  H04L67/146

摘要： The inventive system includes a host, a network including a security gateway, and a public application. Established are an access session between the network and the host and an application session between the public application and the network. An application session record is created for the application session, and includes the user's public user identity used to access the public application, the user's private user identity used to access the network, a host identity, and an application session time. To determine the private user identity for the application session, the security gateway sends a query with the host identity and the application session time. These are compared with the host identity and access session time in an access session record. If they match, then the private user identity in the access session record is returned, and it is stored as the private user identity in the application session record.

摘要翻译： 本发明的系统包括主机，包括安全网关的网络和公共应用。 建立在网络和主机之间的访问会话以及公共应用程序和网络之间的应用程序会话。 为应用会话创建应用会话记录，并且包括用于访问公共应用的用户的公共用户标识，用于访问网络的用户的私有用户标识，主机标识和应用会话时间。 为了确定应用程序会话的私有用户身份，安全网关发送具有主机标识和应用程序会话时间的查询。 这些与访问会话记录中的主机身份和访问会话时间进行比较。 如果匹配，则返回访问会话记录中的私有用户身份，并将其作为私有用户身份存储在应用程序会话记录中。

公开(公告)号：US20130200494A1

公开(公告)日：2013-08-08

申请号：US13366340

申请日：2012-02-05

申请人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

发明人： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

IPC分类号： H01L29/93 ,  H01L21/329

CPC分类号： H01J37/32807 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642

摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.

摘要翻译： 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化 交界处

公开(公告)号：US20090084501A1

公开(公告)日：2009-04-02

申请号：US11862358

申请日：2007-09-27

申请人： Lee CHEN ,  Merritt FUNK

发明人： Lee CHEN ,  Merritt FUNK

IPC分类号： H01L21/306

CPC分类号： H01J37/32422 ,  H01J37/32357 ,  H01J37/3447

摘要： A processing system for producing a negative ion plasma is described, wherein a quiescent plasma having negatively-charged ions is produced. The processing system comprises a first chamber region for generating plasma using a first process gas, and a second chamber region separated from the first chamber region with a separation member. Electrons from plasma in the first region are transported to the second region to form quiescent plasma through collisions with a second process gas. A pressure control system coupled to the second chamber region is utilized to control the pressure in the second chamber region such that the electrons from the first chamber region undergo collision-quenching with the second process gas to form less energetic electrons that produce the quiescent plasma having negatively-charged ions.

摘要翻译： 描述了一种用于制造负离子等离子体的处理系统，其中产生具有带负电荷的离子的静态等离子体。 处理系统包括用于使用第一处理气体产生等离子体的第一室区域和与第一室区域与分离构件分离的第二室区域。 来自第一区域中的等离子体的电子被传送到第二区域，以通过与第二工艺气体的碰撞而形成静止等离子体。 耦合到第二室区域的压力控制系统用于控制第二室区域中的压力，使得来自第一室区域的电子与第二处理气体进行碰撞骤冷以形成较少能量的电子，其产生静态等离子体， 带负电荷的离子。

公开(公告)号：US20120098405A1

公开(公告)日：2012-04-26

申请号：US13343877

申请日：2012-01-05

申请人： Lee CHEN ,  Merritt FUNK

发明人： Lee CHEN ,  Merritt FUNK

IPC分类号： H05H1/46

CPC分类号： H01L21/67069 ,  H01J37/32192 ,  H01J37/3244

摘要： A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.

公开(公告)号：US20090095714A1

公开(公告)日：2009-04-16

申请号：US11871865

申请日：2007-10-12

申请人： Lee CHEN ,  Merritt FUNK

发明人： Lee CHEN ,  Merritt FUNK

IPC分类号： H01L21/306

CPC分类号： H01L21/3065 ,  H01J37/321 ,  H01J37/32357

摘要： Method and system for treating a substrate with plasma under low pressure conditions is described. A plasma processing system comprises a plasma generation chamber having a first plasma region and a process chamber having a second plasma region disposed downstream of the first plasma region. A plasma generation system is coupled to the plasma generation chamber and configured to create a first plasma in the first plasma region, while a plasma heating system is coupled to the process chamber and configured to heat electrons supplied to the second plasma region from the first plasma region to form a second plasma. A substrate holder coupled to the process chamber is configured to support a substrate and expose the substrate to the second plasma.

摘要翻译： 描述了在低压条件下用等离子体处理衬底的方法和系统。 等离子体处理系统包括具有第一等离子体区域的等离子体生成室和设置在第一等离子体区域下游的具有第二等离子体区域的处理室。 等离子体产生系统耦合到等离子体产生室并且被配置为在第一等离子体区域中产生第一等离子体，而等离子体加热系统耦合到处理室并且被配置为加热从第一等离子体提供给第二等离子体区域的电子 区域以形成第二等离子体。 耦合到处理室的衬底保持器构造成支撑衬底并将衬底暴露于第二等离子体。

公开(公告)号：US20120091097A1

公开(公告)日：2012-04-19

申请号：US13275929

申请日：2011-10-18

申请人： Lee CHEN ,  Jianping ZHAO

发明人： Lee CHEN ,  Jianping ZHAO

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67213 ,  H01L21/67253

摘要： The invention provide apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDƒ) data and associated (VUV/EEDƒ)-related procedures in (VUV/EEDƒ) etch systems. The (VUV/EEDƒ)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDƒ)-related models that can include Multi-Input/Multi-Output (MIMO) models.

摘要翻译： 本发明提供了在（VUV / EED f）中使用真空超紫（VUV）数据和电子能量分布函数（EED f）数据和相关（VUV / EED f）相关程序实时地在衬底上产生栅极结构的装置和方法。 ）蚀刻系统。 （VUV /EEDƒ）相关程序可以包括可以包括多输入/多输出（MIMO）模型的多层多步骤处理序列和（VUV /EEDƒ）相关模型。

公开(公告)号：US20110081503A1

公开(公告)日：2011-04-07

申请号：US12574117

申请日：2009-10-06

申请人： Jianping ZHAO ,  Lee CHEN

发明人： Jianping ZHAO ,  Lee CHEN

IPC分类号： C23C16/513 ,  B05D5/12 ,  C23C14/34 ,  C23C14/46

CPC分类号： H01L21/0212 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831

摘要： A method of integrating a fluorine-based dielectric with a metallization scheme is described. The method includes forming a fluorine-based dielectric layer on a substrate, forming a metal-containing layer on the substrate, and adding a buffer layer or modifying a composition of the fluorine-based dielectric layer proximate an interface between the fluorine-based dielectric layer and the metal-containing layer.

摘要翻译： 描述了一种将氟基电介质与金属化方案集成的方法。 该方法包括在基板上形成氟基电介质层，在基板上形成含金属层，并在氟基介电层之间的界面附近添加缓冲层或修饰氟基电介质层的组成 和含金属层。

公开(公告)号：US20090242791A1

公开(公告)日：2009-10-01

申请号：US12059983

申请日：2008-03-31

申请人： Lee CHEN ,  Lin XU ,  Ronald Victor BRAVENEC

发明人： Lee CHEN ,  Lin XU ,  Ronald Victor BRAVENEC

IPC分类号： H01J37/04

CPC分类号： H01J37/05 ,  H01J37/32422 ,  H01J37/32935 ,  H01J49/443 ,  H01J2237/053

摘要： An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an electron rejection grid disposed proximate to the entrance grid, and an ion current collector disposed proximate to the electron rejection grid. The ion current collector is coupled to an ion selection voltage source configured to positively bias the ion current collector by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.

摘要翻译： 描述了用于诊断入射在等离子体中的射频（RF）偏压衬底上的离子的离子能量分布（IED）的离子能量分析器。 离子能量分析器包括暴露于等离子体的入口网格，靠近入口格栅设置的电子排斥栅极，以及靠近电子排除栅格设置的离子集电器。 离子集电器耦合到离子选择电压源，该离子选择电压源被配置为通过离子选择电压对离子集电器进行正偏置，并且电子抑制栅极耦合到电子抑制电压源，其被配置为通过电子 拒绝电压。 此外，离子电流计耦合到离子集电器以测量离子电流。

公开(公告)号：US20120095586A1

公开(公告)日：2012-04-19

申请号：US13275964

申请日：2011-10-18

申请人： Lee CHEN ,  Jianping ZHAO

发明人： Lee CHEN ,  Jianping ZHAO

IPC分类号： G05B23/02 ,  C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67213 ,  H01L21/67253

摘要： The invention provides an apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDf) data and associated (VUV/EEDf)-related procedures in (VUV/EEDf) etch systems. The (VUV/EEDf)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDf)-related models that can include Multi-Input/Multi-Output (MIMO) models.

摘要翻译： 本发明提供了一种用于在（VUV / EEDf）数据和VUV / EEDf相关过程中实时使用真空紫外（VUV）数据和电子能量分布函数（EEDf）数据和相关（VUV / EEDf）相关程序实时地在衬底上产生栅极结构的装置和方法。 EEDf）蚀刻系统。 （VUV / EEDf）相关程序可以包括可以包括多输入/多输出（MIMO）模型的多层多步骤处理序列和（VUV / EEDf）相关模型。

公开(公告)号：US20110057562A1

公开(公告)日：2011-03-10

申请号：US12555080

申请日：2009-09-08

申请人： Lee CHEN ,  Jianping ZHAO ,  Ronald V. BRAVENEC ,  Merritt FUNK

发明人： Lee CHEN ,  Jianping ZHAO ,  Ronald V. BRAVENEC ,  Merritt FUNK

IPC分类号： H05H1/26 ,  H01P3/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

摘要： A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

摘要翻译： 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有多个槽的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型，其中第一凹槽构型基本上与多个槽中的槽的第一布置对准，以及形成在等离子体表面中的第二凹槽构型，其中第二凹槽 配置部分地与多个槽中的槽的第二布置部分对准或者不与多个槽中的槽的第二布置对准。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。