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公开(公告)号：US20080073664A1
公开(公告)日：2008-03-27
申请号：US11976972
申请日：2007-10-30
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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公开(公告)号：US20070292979A1
公开(公告)日：2007-12-20
申请号：US11723449
申请日：2007-03-20
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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3.发明申请Integrated semiconductor laser diode module and manufacturing method of the same 失效集成半导体激光二极管模块及其制造方法相同公开(公告)号：US20050232327A1
公开(公告)日：2005-10-20
申请号：US11067472
申请日：2005-02-28
IPC分类号： H01S5/40 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/028 , H01S5/0287 , H01S5/1039 , H01S5/1082 , H01S5/2009 , H01S5/221 , H01S5/222 , H01S5/2231 , H01S5/34326 , H01S5/34333 , H01S5/3436 , H01S5/4043 , H01S5/4087
摘要： Improving the lifetime of an integrated semiconductor laser diode module into which a GaN semiconductor laser diode and a GaP semiconductor laser diode are integrated, and the lasing properties of the laser diodes. Prior to a joining step of an LD 1 wafer that is made of a nitride semiconductor structure formed on a GaN substrate and an LD 2 wafer that is made of an aluminum gallium indium phosphide semiconductor structure, a facet of a resonator of the nitride semiconductor structure is formed by etching A facet of a resonator of the aluminum gallium indium phosphide semiconductor structure is formed, after the joining step, by cleaving. The wafers are joined so that the facets of the resonators of the nitride semiconductor structure and aluminum gallium indium phosphide semiconductor structure are out of alignment in a lengthwise direction of the resonators.
摘要翻译： 整合半导体激光二极管和GaP半导体激光二极管的集成半导体激光二极管模块的寿命提高以及激光二极管的激光特性。 在由GaN衬底上形成的氮化物半导体结构和由铝镓铟磷化物半导体结构制成的LD 2晶片制成的LD 1晶片的接合步骤之前，氮化物半导体结构的谐振器的面 通过蚀刻形成在接合步骤之后通过切割形成铝镓铟磷化物半导体结构的谐振器的一个面。 晶片被接合，使得氮化物半导体结构的谐振器的面和磷化铝镓磷化物半导体结构在谐振器的长度方向上不对准。
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4.发明授权Integrated semiconductor laser diode module and manufacturing method of the same 失效集成半导体激光二极管模块及其制造方法相同公开(公告)号：US07769069B2
公开(公告)日：2010-08-03
申请号：US11067472
申请日：2005-02-28
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/028 , H01S5/0287 , H01S5/1039 , H01S5/1082 , H01S5/2009 , H01S5/221 , H01S5/222 , H01S5/2231 , H01S5/34326 , H01S5/34333 , H01S5/3436 , H01S5/4043 , H01S5/4087
摘要： Improving the lifetime of an integrated semiconductor laser diode module into which a GaN semiconductor laser diode and a GaP semiconductor laser diode are integrated, and the lasing properties of the laser diodes. Prior to a joining step of an LD 1 wafer that is made of a nitride semiconductor structure formed on a GaN substrate and an LD 2 wafer that is made of an aluminum gallium indium phosphide semiconductor structure, a facet of a resonator of the nitride semiconductor structure is formed by etching. A facet of a resonator of the aluminum gallium indium phosphide semiconductor structure is formed, after the joining step, by cleaving. The wafers are joined so that the facets of the resonators of the nitride semiconductor structure and aluminum gallium indium phosphide semiconductor structure are out of alignment in a lengthwise direction of the resonators.
摘要翻译： 整合半导体激光二极管和GaP半导体激光二极管的集成半导体激光二极管模块的寿命提高以及激光二极管的激光特性。 在由GaN衬底上形成的氮化物半导体结构和由铝镓铟磷化物半导体结构制成的LD 2晶片制成的LD 1晶片的接合步骤之前，氮化物半导体结构的谐振器的面 通过蚀刻形成。 在接合步骤之后，通过切割形成铝镓铟磷化物半导体结构的谐振器的一个面。 晶片被接合，使得氮化物半导体结构的谐振器的面和磷化铝镓磷化物半导体结构在谐振器的长度方向上不对准。
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公开(公告)号：US07589357B2
公开(公告)日：2009-09-15
申请号：US11976972
申请日：2007-10-30
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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公开(公告)号：US07372077B2
公开(公告)日：2008-05-13
申请号：US10766031
申请日：2004-01-29
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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公开(公告)号：US20060227838A1
公开(公告)日：2006-10-12
申请号：US11390460
申请日：2006-03-28
申请人： Masayuki Hata , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono , Kenji Nagatomi , Yoichi Tsuchiya
发明人： Masayuki Hata , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono , Kenji Nagatomi , Yoichi Tsuchiya
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , H01L2224/48091 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/4087 , H01L2924/00014
摘要： A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.
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公开(公告)号：US20060045156A1
公开(公告)日：2006-03-02
申请号：US11215066
申请日：2005-08-31
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01S5/4087 , H01L2924/00014
摘要： A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN substrate. Each of the red semiconductor laser device and the infrared semiconductor laser device is manufactured by forming semiconductor layers on a GaAs substrate. The modulus of elasticity of GaAs is smaller than the modulus of elasticity of GaN. The length of each of the red semiconductor laser device and the infrared semiconductor laser device is longer than the length of the blue-violet semiconductor laser device.
摘要翻译： 在半导体激光装置中使用的单芯片半导体激光装置具有将红色半导体激光装置和红外半导体激光装置堆叠在蓝紫色半导体激光装置上的结构。 通过在GaN衬底上形成半导体层来制造蓝紫色半导体激光器件。 通过在GaAs衬底上形成半导体层来制造红色半导体激光器件和红外半导体激光器件。 GaAs的弹性模量小于GaN的弹性模量。 红色半导体激光器件和红外半导体激光器件的长度比蓝紫色半导体激光器件的长度长。
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公开(公告)号：US20050232321A1
公开(公告)日：2005-10-20
申请号：US11078626
申请日：2005-03-14
申请人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata , Yasuhiko Nomura
发明人： Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata , Yasuhiko Nomura
CPC分类号： H01S5/02212 , H01L2224/48091 , H01L2224/73265 , H01S5/02272 , H01S5/02276 , H01S5/042 , H01S5/22 , H01S5/4031 , H01S5/4087 , H01L2924/00014
摘要： A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential.
摘要翻译： 半导体激光装置包括发射蓝紫色激光束的第一半导体激光装置，发射红色激光束的第二半导体激光装置和导电封装体。 第一半导体激光器件具有p侧焊盘电极和n侧电极。 第一半导体激光器件的p侧焊盘电极和n侧电极与封装主体电隔离。 第一半导体激光器件的p侧焊盘电极与产生正电位的驱动电路连接，而其n侧电极与产生负电位的直流电源连接。
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公开(公告)号：US07817694B2
公开(公告)日：2010-10-19
申请号：US11215066
申请日：2005-08-31
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01S5/4087 , H01L2924/00014
摘要： A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN substrate. Each of the red semiconductor laser device and the infrared semiconductor laser device is manufactured by forming semiconductor layers on a GaAs substrate. The modulus of elasticity of GaAs is smaller than the modulus of elasticity of GaN. The length of each of the red semiconductor laser device and the infrared semiconductor laser device is longer than the length of the blue-violet semiconductor laser device.
摘要翻译： 在半导体激光装置中使用的单芯片半导体激光装置具有将红色半导体激光装置和红外半导体激光装置堆叠在蓝紫色半导体激光装置上的结构。 通过在GaN衬底上形成半导体层来制造蓝紫色半导体激光器件。 通过在GaAs衬底上形成半导体层来制造红色半导体激光器件和红外半导体激光器件。 GaAs的弹性模量小于GaN的弹性模量。 红色半导体激光器件和红外半导体激光器件的长度比蓝紫色半导体激光器件的长度长。
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