摘要:
A printing press is configured such that the printing sheet is supplied from the paper feeding unit through the intermediate cylinder 14 while the ink is supplied from the ink apparatus to the blanket cylinder 11 through the printing cylinder 12 and, when the printing sheet passes between the blanket cylinder 11 and the impression cylinder 13, the ink is transferred from the blanket cylinder 11 and, thereby, printing is executed. In the printing press, the rotary encoder 31 detects the rotation angle of the blanket cylinder 11 and the control unit 32 receives the instructions of the head portion finding switches 33b, 33c and drives and controls the driving unit 16 and, thereby, the blanket cylinder 11 can be rotated and stopped to/at the blanket replacement angle for replacing the blanket 28 wound around the blanket cylinder 11.
摘要:
An object is to provide a printing machine nip checking system and the like that facilitates a nip checking operation. In the invention, a subject roller selecting section 10 is provided that selects a roller of which a nip width is to be checked. When a subject is narrowed, a main gear rotation angle calculating section 11 determines a rotation angle of the selected roller, in addition to a rotation direction. A main gear rotation driving section 13 connected to the main gear rotation angle calculating section 11 rotates a main gear 18 by the calculated desired angle, after the main gear 18 is stopped for a certain amount of time. As a result, an operator can visually recognize a nip on a subject gear without particularly considering the rotation direction and the rotation angle of the main gear 18.
摘要:
A single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst process, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section of a peripheral driving circuit integration type LCD. A single crystal silicon thin film having high electron/hole mobility is formed into a uniform film at a relatively low temperature, which enables the manufacturing of an active matrix substrate incorporated with a high-performance driver which can be used in a TFT display.
摘要:
The present invention provides an active matrix substrate having a built-in high-performance driver, in which a single crystal silicon thin film having high electron/hole mobility is uniformly deposited at a relatively low temperature, and an electrooptic device such as a thin film semiconductor device for display including the active matrix substrate. The single crystal silicon thin film is deposited by hetero epitaxial growth by a catalytic CVD method or the like using a crystalline sapphire thin film formed on the substrate as a seed so that the single crystal silicon layer obtained is used for top gate type MOSTFTs of the electrooptic device such as a LED or the like in which a display region and a peripheral driving circuit region are integrated.
摘要:
Disclosed is a process of forming a silicon thin film used as an active layer of a thin film transistor, which process is improved for enhancing a quality and a productivity of the silicon thin film. At a physical vapor deposition step, an amorphous silicon thin film is physically formed on a substrate in vacuum. Then, at a laser annealing step, directly after formation of the amorphous silicon thin film without the need of dehydrogenation, a laser light is irradiated to the amorphous silicon thin film, to convert the amorphous silicon thin film into a polycrystalline silicon thin film. After that, the polycrystalline silicon thin film thus converted is processed to form a thin film transistor. In the physical vapor deposition step, an amorphous silicon thin film may be formed by sputtering using a target made from a silicon crystal body or a silicon sintered body. In the sputtering, an amorphous silicon thin film can be formed by sputtering using a target previously mixed with an impurity in a desired concentration. By introducing an impurity in the amorphous silicon thin film at the film formation stage, a threshold characteristic of a thin film transistor can be previously controlled.
摘要:
A method for bonding two objects by means of the following two adhesives:(A) a moisture-inducible room temperature anion polymerization curing adhesive composed essentially of at least one anion polymerizable compound selected from the group consisting of an .alpha.-cyanoacrylate compound of the formula: ##STR1## wherein R is an alkyl group having from 1 to 16 carbon atoms, an alkoxyalkyl group having 2 to 16 carbon atoms, a haloalkyl group having from 1 to 16 carbon atoms, a cyanoalkyl group having from 2 to 16 carbon atoms, an aralkyl group having from 6 to 12 atoms, an acyloxyalkyl group having from 2 to 16 carbon atoms, a cycloalkyl group having from 3 to 16 carbon atoms, an alkenyl group having from 2 to 16 carbon atoms or an aryl group having from 6 to 12 carbon atoms, and a 1,1-disubstituted diene compound of the formula: ##STR2## wherein each of R.sup.1 and R.sup.2 which may be the same or different, is a hydrogen atom, an alkyl group having from 1 to 5 carbon atoms, an aryl group, an aralkyl group having from 6 to 12 carbon atoms or a halogen atom, R.sup.3 is a hydrogen atom or a methyl group, each of X and Y which may be the same or different, is a cyano group, a carboxylic acid ester group having from 2 to 12 carbon atoms, an ethylsulfone group, a phenylsulfone group, a formyl group, an acetyl group, a benzoyl group, an amide group, a diethyl sulfonyl group, or a phenyl group; and(B) a room temperature self-curing adhesive containing from 0.05 to 50% by weight of an anion polymerization accelerator, said self-curing adhesive being selected from the group consisting of (1) a room temperature moisture-curing adhesive, (2) a room temperature curing two-part type epoxy resin adhesive, and (3) a room temperature curing synthetic resin aqueous emulsion adhesive, which comprises applying said two adhesives (A) and (B) at the bonding interface of the objects so that they do not contact each other and pressing the objects to each other to bring the two adhesives in contact with each other.
摘要:
An NPN-type bipolar transistor is disclosed which has an additional P-type conductivity in its emitter region. The current-amplification factor h.sub.FE of the transistor is high when the additional region is electrically floated, while the amplification factor h.sub.FE is lower when the additional region is supplied with an emitter potential. The device is so designed and constructed that the transistor factor h.sub.FE can be variably controlled over a wide range. The transistor operates as an h.sub.FE controlled transistor. A thyristor is also disclosed which includes a cathode, a gate, and an electrically floated base electrode and which has an additional region formed in the cathode. This additional region is used as a second gate in addition to an ordinary gate, and either of the gates may be used for ON- and OFF- operations.
摘要:
An outside mirror apparatus for a vehicle includes an illuminating unit that includes a light source including a plurality of light emitting elements arranged on a flexible sheet member; a base including a mounting section for mounting the light source; and a lens that divides, with the base, a lamp chamber that contains the light source. The light source is mounted on the mounting section in a curved state or in a bent state.
摘要:
Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-type impurity ions are implanted to make a P-channel MOS transistor portion a single-crystal silicon layer (14). In a single-crystal silicon layer (11), an N+ source region (20) and drain region (21) of an N-channel MOS transistor are formed. Thus, a silicon layer is epitaxially grown uniformly at low temperatures.
摘要:
A method for bonding two objects by means of the following two adhesives:(A) a moisture-inducible room temperature anion polymerization curing adhesive composed essentially of at least one anion polymerizable compound selected from the group consisting of an .alpha.-cyanoacrylate compound, and a 1,1-disubstituted diene compound;and(B) a room temperature self-curing adhesive containing from 0.05 to 50% by weight of an anion polymerization accelerator, said self-curing adhesive being selected from the group consisting of (1) a room temperature moisture-curing adhesive, (2) a room temperature curing two-part type epoxy resin adhesive, and (3) a room temperature curing synthetic resin aqueous emulsion adhesive, which comprises applying said two adhesives (A) and (B) at the bonding interface of the objects so that they do not contact each other and pressing the objects to each other to bring the two adhesives in contact with each other.