-
公开(公告)号：US20100290498A1
公开(公告)日：2010-11-18
申请号：US12812644
申请日：2009-09-11
IPC分类号： H01S5/026
CPC分类号： H01S5/4031 , B82Y20/00 , H01L2224/48091 , H01L2224/48111 , H01L2224/48463 , H01L2224/73265 , H01S5/0216 , H01S5/0224 , H01S5/02272 , H01S5/22 , H01S5/24 , H01S5/3202 , H01S5/34333 , H01S5/405 , H01S5/4087 , H04N9/3161 , H01L2924/00014
摘要： A semiconductor laser device capable of flexibly coping even with a case where a large output power difference is required between a plurality of laser elements having different lasing wavelengths when reproducing white light is obtained. This semiconductor laser device (100) includes a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions, a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, and a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions. At least two semiconductor laser elements among the red semiconductor laser element, the green semiconductor laser element and the blue semiconductor laser element have such a relation that the number of the laser beam emitting portions of the semiconductor laser element emitting a relatively long wavelength is larger than the number of the laser beam emitting portions of the semiconductor laser element emitting a relatively short wavelength.
摘要翻译： 获得即使在再现白光时在具有不同的激光波长的多个激光元件之间需要大的输出功率差的情况下也能够灵活应对的半导体激光器件。 该半导体激光装置（100）具有具有一个或多个激光束发射部的红色半导体激光元件（10），具有一个或多个激光束发射部的绿色半导体激光元件（30），蓝色半导体 具有一个或多个激光束发射部分的激光元件（50）。 红色半导体激光元件，绿色半导体激光元件和蓝色半导体激光元件中的至少两个半导体激光元件具有发射较长波长的半导体激光元件的激光束发射部的数量大于 发射相对短波长的半导体激光元件的激光束发射部分的数量。
-
公开(公告)号：US20100079359A1
公开(公告)日：2010-04-01
申请号：US12570662
申请日：2009-09-30
申请人： Yasumitsu Kunoh , Yasuhiko Nomura
发明人： Yasumitsu Kunoh , Yasuhiko Nomura
CPC分类号： G09G3/002 , B82Y20/00 , G09G3/3406 , G09G3/346 , G09G2300/0452 , G09G2310/0235 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H04N9/3161
摘要： This semiconductor laser device includes a substrate, a blue semiconductor laser element, formed on the surface of a substrate, including a first active layer made of a nitride-based semiconductor and having a first major surface of a non-C plane and a green semiconductor laser element, formed on the surface of the substrate, including a second active layer made of a nitride-based semiconductor and having a second major surface of a surface orientation substantially identical to the non-C plane.
摘要翻译： 该半导体激光器件包括形成在基板表面上的基板，蓝色半导体激光元件，其包括由氮化物类半导体构成的第一有源层，具有非C面的第一主表面和绿色半导体 激光元件，其形成在所述基板的表面上，所述激光元件包括由氮化物基半导体制成的第二有源层，并且具有与所述非C平面基本相同的表面取向的第二主表面。
-
公开(公告)号：US20100284433A1
公开(公告)日：2010-11-11
申请号：US12812715
申请日：2009-09-17
CPC分类号： H04N9/3161 , B82Y20/00 , H01L2224/48091 , H01S5/0216 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/02476 , H01S5/0425 , H01S5/22 , H01S5/24 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4093 , H04N9/3105 , H04N9/3111 , H01L2924/00014
摘要： A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device (100) includes a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions, and a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions. At least two semiconductor laser elements among the green semiconductor laser element, the blue semiconductor laser element and the red semiconductor laser element have such a relation that the number of the laser beam emitting portions of the semiconductor laser element whose total output power is relatively small is larger than the number of the laser beam emitting portions of the semiconductor laser element, having a plurality of laser beam emitting portions, whose total output power is relatively large, or the number of the semiconductor laser element, having one laser beam emitting portion, whose output power is relatively large.
摘要翻译： 获得能够容易地获得期望色调的半导体激光器件。 该半导体激光装置（100）包括具有一个或多个激光束发射部的绿色半导体激光元件（30），具有一个或多个激光束发射部的蓝色半导体激光元件（50）和红色半导体 具有一个或多个激光束发射部分的激光元件（10）。 绿色半导体激光元件，蓝色半导体激光元件和红色半导体激光元件中的至少两个半导体激光元件具有这样的关系：总输出功率相对较小的半导体激光元件的激光束发射部分的数量是 大于具有多个总输出功率相对较大的激光束发射部分的半导体激光元件的激光束发射部分的数量或具有一个激光束发射部分的半导体激光元件的数量，其中， 输出功率比较大。
-
公开(公告)号：US08121163B2
公开(公告)日：2012-02-21
申请号：US12047924
申请日：2008-03-13
CPC分类号： H01S5/0207 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22 , H01S5/3201 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.
摘要翻译： 获得能够抑制从半导体激光二极管元件发射的激光束的发射位置和发射方向的变化的半导体激光二极管装置。 该半导体激光二极管装置包括：半导体激光二极管元件，其具有沿着与第一方向相交的第一方向或与第一方向交叉的第二方向的翘曲;以及半导体激光二极管元件的翘曲的凸侧 固定，其中所述半导体激光二极管元件的第一端之间沿所述第一和第二方向之间的较大翘曲的方向与所述基座之间的距离小于所述半导体激光二极管元件的第二端之间的距离， 第一和第二个方向和基地之间大的扭曲。
-
5.发明授权Nitride based semiconductor laser device with oxynitride protective films on facets 有权氮化物基半导体激光器件，面上有氮氧化物保护膜公开(公告)号：US07978744B2
公开(公告)日：2011-07-12
申请号：US12236616
申请日：2008-09-24
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0282
摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
摘要翻译： 氮化物基半导体激光器件的一个面由（0001）的解理面构成，另一个面由（000 1）的解理面构成。 因此，一个面和另一个面分别是Ga极平面和N极平面。 位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。 在一个面上形成包括氮作为构成元素的第一保护膜。 在另一方面形成包括氧作为构成元素的第二保护膜。
-
6.发明授权Nitride based semiconductor laser device with oxynitride protective coatings on facets 失效基于氮化物的半导体激光器件，具有氧氮化物保护涂层公开(公告)号：US07924898B2
公开(公告)日：2011-04-12
申请号：US12236627
申请日：2008-09-24
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/0282 , H01S5/0287 , H01S5/1082 , H01S5/227 , H01S5/3202 , H01S2301/176
摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
摘要翻译： 氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。 因此，一个面和另一个面分别是Ga极平面和N极平面。 位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。 在一个面上形成包括氧作为构成元素的第一保护膜。 在另一方面形成包括氮作为构成元素的第二保护膜。
-
公开(公告)号：US07869480B2
公开(公告)日：2011-01-11
申请号：US12126365
申请日：2008-05-23
IPC分类号： H01S3/04
CPC分类号： H01S5/10 , H01L2224/73265 , H01L2924/01019 , H01S5/0207 , H01S5/02272 , H01S5/02276 , H01S5/3201
摘要： In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
摘要翻译： 在半导体激光装置中，将半导体激光元件固定在基底上，使得半导体激光元件的翘曲的凸面与基体之间的距离随着半导体激光元件的翘曲沿对应于半导体激光元件的第一方向而变化 在与距离最大的区域的附近对应的电极层的一部分周围设置引线接合部的情况下的空腔的延伸方向。
-
公开(公告)号：US07567605B2
公开(公告)日：2009-07-28
申请号：US11393891
申请日：2006-03-31
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
摘要翻译： 获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。 该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。
-
9.发明申请SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR LASER APPARATUS, AND OPTICAL PICKUP APPARATUS 失效半导体激光装置，制造半导体激光装置的方法和光学拾取装置公开(公告)号：US20090116529A1
公开(公告)日：2009-05-07
申请号：US12348573
申请日：2009-01-05
申请人： Masayuki HATA , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono , Kenji Nagatomi , Yoichi Tsuchiya
发明人： Masayuki HATA , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono , Kenji Nagatomi , Yoichi Tsuchiya
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , H01L2224/48091 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/4087 , H01L2924/00014
摘要： A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.
摘要翻译： 单片红/红外半导体激光器件连接到蓝紫色半导体激光器件。 蓝紫色半导体激光装置中的蓝紫色发射点与红外线半导体激光装置的红外线发射点之间的距离明显短于红色半导体激光装置的红色发射点与红外线发射点 。 从蓝紫色发射点，红色发射点和红外线发射点分别发射的蓝紫色激光束，红色激光束和红外激光束被入射到光盘上之后被引入光电检测器 包括偏振分束器，准直透镜，光束扩展器，λ/ 4板，物镜，柱面透镜和光轴校正元件的光学系统。
-
公开(公告)号：US20090086783A1
公开(公告)日：2009-04-02
申请号：US12236616
申请日：2008-09-24
IPC分类号： H01S5/026
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0282
摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
摘要翻译： 氮化物基半导体激光器件的一个面由（0001）的解理面构成，其另一个面由（000
-
-
-
-
-
-
-
-
-
搜索结果
105 条记录 (耗时 0.03 秒)
