公开(公告)号：US5217917A

公开(公告)日：1993-06-08

申请号：US496280

申请日：1990-03-20

申请人： Yasushi Takahashi ,  Hidetoshi Iwai ,  Satoshi Oguchi ,  Hisashi Nakamura ,  Hiroyuki Uchiyama ,  Toshitugu Takemuma ,  Shigetoshi Sakomura ,  Kazuyuki Miyazawa ,  Masamichi Ishihara ,  Ryoichi Hori ,  Takeshi Kizaki ,  Yoshihisa Koyama ,  Haruo Ii ,  Masaya Muranaka ,  Hidetomo Aoyagi ,  Hiromi Matsuura

发明人： Yasushi Takahashi ,  Hidetoshi Iwai ,  Satoshi Oguchi ,  Hisashi Nakamura ,  Hiroyuki Uchiyama ,  Toshitugu Takemuma ,  Shigetoshi Sakomura ,  Kazuyuki Miyazawa ,  Masamichi Ishihara ,  Ryoichi Hori ,  Takeshi Kizaki ,  Yoshihisa Koyama ,  Haruo Ii ,  Masaya Muranaka ,  Hidetomo Aoyagi ,  Hiromi Matsuura

IPC分类号： G11C5/00 ,  G11C5/02 ,  G11C7/10 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  G11C29/00 ,  G11C29/02 ,  G11C29/46 ,  G11C29/50

CPC分类号： G11C29/027 ,  G11C11/4074 ,  G11C11/4082 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/46 ,  G11C29/50 ,  G11C29/50012 ,  G11C5/00 ,  G11C5/025 ,  G11C7/1045 ,  G11C11/401 ,  G11C2029/5006 ,  G11C29/78

摘要： A semiconductor memory device is provided which includes a substrate arrangement which is suitable for forming a large number of types of DRAMs having different package specifications, different bit structure and different operating modes. In conjunction with this, the bonding pads are arranged at optimum locations for accommodating the different package types. Various layout arrangements are also provided to minimize space and to improve access time. Additional features are provided, including improved output buffer circuitry, protection circuitry and testing methods to facilitate operation of the semiconductor memory device.

摘要翻译： 提供了一种半导体存储器件，其包括适于形成具有不同封装规格，不同位结构和不同工作模式的大量类型的DRAM的衬底布置。 结合这些，接合垫被布置在适于不同包装类型的最佳位置处。 还提供了各种布局布置以最小化空间并改善访问时间。 提供了额外的功能，包括改进的输出缓冲器电路，保护电路和测试方法以便于半导体存储器件的操作。

公开(公告)号：US5426613A

公开(公告)日：1995-06-20

申请号：US972907

申请日：1992-11-06

申请人： Yasushi Takahashi ,  Hidetoshi Iwai ,  Satoshi Oguchi ,  Hisashi Nakamura ,  Hiroyuki Uchiyama ,  Toshitugu Takekuma ,  Shigetoshi Sakomura ,  Kazuyuki Miyazawa ,  Masamichi Ishihara ,  Ryoichi Hori ,  Takeshi Kizaki ,  Yoshihisa Koyama ,  Haruo Ii ,  Masaya Muranaka ,  Hidetomo Aoyagi ,  Hiromi Matsuura

发明人： Yasushi Takahashi ,  Hidetoshi Iwai ,  Satoshi Oguchi ,  Hisashi Nakamura ,  Hiroyuki Uchiyama ,  Toshitugu Takekuma ,  Shigetoshi Sakomura ,  Kazuyuki Miyazawa ,  Masamichi Ishihara ,  Ryoichi Hori ,  Takeshi Kizaki ,  Yoshihisa Koyama ,  Haruo Ii ,  Masaya Muranaka ,  Hidetomo Aoyagi ,  Hiromi Matsuura

IPC分类号： G11C5/00 ,  G11C5/02 ,  G11C7/10 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  G11C29/00 ,  G11C29/02 ,  G11C29/46 ,  G11C29/50 ,  G11C7/00 ,  G11C8/00

CPC分类号： G11C29/027 ,  G11C11/4074 ,  G11C11/4082 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/46 ,  G11C29/50 ,  G11C29/50012 ,  G11C5/00 ,  G11C5/025 ,  G11C7/1045 ,  G11C11/401 ,  G11C2029/5006 ,  G11C29/78

摘要： A semiconductor memory device is provided which includes a substrate arrangement which is suitable for forming a large number of types of DRAMs having different package specifications, different bit structure and different operating modes. In conjunction with this, the bonding pads are arranged at optimum locations for accommodating the different package types. Various layout arrangements are also provided to minimize space and to improve access time. Additional features are provided, including improved output buffer circuitry, protection circuitry and testing methods to facilitate operation of the semiconductor memory device.

摘要翻译： 提供了一种半导体存储器件，其包括适于形成具有不同封装规格，不同位结构和不同工作模式的大量类型的DRAM的衬底布置。 结合这些，接合垫被布置在适于不同包装类型的最佳位置处。 还提供了各种布局布置以最小化空间并改善访问时间。 提供了额外的功能，包括改进的输出缓冲器电路，保护电路和测试方法以便于半导体存储器件的操作。

公开(公告)号：US5805513A

公开(公告)日：1998-09-08

申请号：US432867

申请日：1995-05-02

申请人： Yasushi Takahashi ,  Hidetoshi Iwai ,  Satoshi Oguchi ,  Hisashi Nakamura ,  Hiroyuki Uchiyama ,  Toshitugu Takekuma ,  Shigetoshi Sakomura ,  Kazuyuki Miyazawa ,  Masamichi Ishihara ,  Ryoichi Hori ,  Takeshi Kizaki ,  Yoshihisa Koyama ,  Haruo Ii ,  Masaya Muranaka ,  Hidetomo Aoyagi ,  Hiromi Matsuura

发明人： Yasushi Takahashi ,  Hidetoshi Iwai ,  Satoshi Oguchi ,  Hisashi Nakamura ,  Hiroyuki Uchiyama ,  Toshitugu Takekuma ,  Shigetoshi Sakomura ,  Kazuyuki Miyazawa ,  Masamichi Ishihara ,  Ryoichi Hori ,  Takeshi Kizaki ,  Yoshihisa Koyama ,  Haruo Ii ,  Masaya Muranaka ,  Hidetomo Aoyagi ,  Hiromi Matsuura

IPC分类号： G11C5/00 ,  G11C5/02 ,  G11C7/10 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  G11C29/00 ,  G11C29/02 ,  G11C29/46 ,  G11C29/50 ,  G11C7/00

CPC分类号： G11C29/027 ,  G11C11/4074 ,  G11C11/4082 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/46 ,  G11C29/50 ,  G11C29/50012 ,  G11C5/00 ,  G11C5/025 ,  G11C7/1045 ,  G11C11/401 ,  G11C2029/5006 ,  G11C29/78

摘要： A semiconductor memory device is provided which includes a substrate arrangement which is suitable for forming a large number of types of DRAMs having different package specifications, different bit structure and different operating modes. In conjunction with this, the bonding pads are arranged at optimum locations for accommodating the different package types. Various layout arrangements are also provided to minimize space and to improve access time. Additional features are provided, including improved output buffer circuitry, protection circuitry and testing methods to facilitate operation of the semiconductor memory device.

公开(公告)号：US5208782A

公开(公告)日：1993-05-04

申请号：US892708

申请日：1992-05-29

申请人： Toshiyuki Sakuta ,  Masamichi Ishihara ,  Kazuyuki Miyazawa ,  Masanori Tazunoki ,  Hidetoshi Iwai ,  Hisashi Nakamura ,  Yasushi Takahashi ,  Toshio Maeda ,  Hiromi Matsuura ,  Ryoichi Hori ,  Toshio Sasaki ,  Osamu Sakai ,  Hiroyuki Uchiyama ,  Eiji Miyamoto ,  Kazuyoshi Oshima ,  Yasuhiro Kasama

发明人： Toshiyuki Sakuta ,  Masamichi Ishihara ,  Kazuyuki Miyazawa ,  Masanori Tazunoki ,  Hidetoshi Iwai ,  Hisashi Nakamura ,  Yasushi Takahashi ,  Toshio Maeda ,  Hiromi Matsuura ,  Ryoichi Hori ,  Toshio Sasaki ,  Osamu Sakai ,  Hiroyuki Uchiyama ,  Eiji Miyamoto ,  Kazuyoshi Oshima ,  Yasuhiro Kasama

IPC分类号： G06F11/18 ,  G06F11/20 ,  G11C11/406 ,  G11C29/00 ,  H01L27/105 ,  H01L27/108

CPC分类号： G11C29/808 ,  G11C11/406 ,  G11C29/88 ,  H01L24/06 ,  H01L27/10805 ,  G06F11/1666 ,  G06F11/183 ,  H01L2224/4826 ,  H01L27/105 ,  H01L2924/13091 ,  H01L2924/14

摘要： A semiconductor integrated circuit memory structure is provided which uses macro-cellulated circuit blocks that can permit a very large storage capability (for example, on the order of 64 Mbits in a DRAM) on a single chip. To achieve, this, a plurality of macro-cellulated memory blocks can be provided, with each of the memory blocks including a memory array as well as additional circuitry such as address selection circuits and input/output circuits. Other peripheral circuits are provided on the chip which are common to the plurality of macro-cell memory blocks. The macro-cell memory blocks themselves can be formed in an array so that their combined storage capacity will form the large overall storage capacity of the chip. The combination of the macro-cell memory blocks and the common peripheral circuitry for controlling the memory blocks permits a faster and more efficient refreshing operation for a DRAM. This is enhanced by a LOC (Lead On Chip) arrangement used in conjunction with the memory blocks.

摘要翻译： 提供了一种半导体集成电路存储器结构，其使用宏单元电路块，其可以在单个芯片上允许非常大的存储能力（例如，DRAM中的64Mbits）。 为了实现这一点，可以提供多个宏单元存储器块，其中每个存储器块包括存储器阵列以及诸如地址选择电路和输入/输出电路的附加电路。 在芯片上提供了多个宏单元存储块通用的其他外围电路。 宏单元存储器块本身可以形成为阵列，使得它们的组合存储容量将形成芯片的大的总体存储容量。 宏单元存储器块和用于控制存储器块的公共外围电路的组合允许DRAM的更快更有效的刷新操作。 这通过与存储器块结合使用的LOC（片上芯片）布置来增强。

公开(公告)号：US5151772A

公开(公告)日：1992-09-29

申请号：US616705

申请日：1990-11-20

申请人： Yasushi Takahashi ,  Hiromi Matsuura ,  Yoshihisa Koyama ,  Masaya Muranaka ,  Katsutaka Kimura ,  Kazuyuki Miyazawa ,  Masamichi Ishihara ,  Hidetoshi Iwai

发明人： Yasushi Takahashi ,  Hiromi Matsuura ,  Yoshihisa Koyama ,  Masaya Muranaka ,  Katsutaka Kimura ,  Kazuyuki Miyazawa ,  Masamichi Ishihara ,  Hidetoshi Iwai

IPC分类号： H01L23/522 ,  H01L27/108

CPC分类号： H01L23/5226 ,  H01L27/10805 ,  H01L2924/0002 ,  Y10S257/923

摘要： A semiconductor integrated circuit device is provided which includes a memory cell array located in a generally central area of a semiconductor substrate with peripheral circuits located at both ends of the semiconductor substrate. A wiring layer is also provided which couples the peripheral circuits to one another. This wiring layer is arranged to have a double-layer structure of first and second aluminum layers which are electrically coupled to one another.

摘要翻译： 提供一种半导体集成电路器件，其包括位于半导体衬底的大致中心区域中的存储单元阵列，其具有位于半导体衬底两端的外围电路。 还提供了将外围电路彼此耦合的布线层。 该布线层被布置成具有彼此电耦合的第一和第二铝层的双层结构。

公开(公告)号：US5359561A

公开(公告)日：1994-10-25

申请号：US872958

申请日：1992-04-23

申请人： Shigetoshi Sakomura ,  Kazuya Ito ,  Hidetoshi Iwai ,  Toshiyuki Sakuta ,  Masamichi Ishihara ,  Tomoshi Matsumoto, deceased

发明人： Shigetoshi Sakomura ,  Kazuya Ito ,  Hidetoshi Iwai ,  Toshiyuki Sakuta ,  Masamichi Ishihara ,  Tomoshi Matsumoto, deceased

IPC分类号： G11C11/401 ,  G11C29/00 ,  G11C29/04 ,  G11C29/24 ,  G11C7/00

CPC分类号： G11C29/24

摘要： A semiconductor memory device is provided which includes a plurality of data lines, at least one redundant data line, one common data line, a plurality of column switches installed between the plurality of data lines and the redundant data line and one common data line, and a column decoder for controlling the plurality of column switches. The column decoder operates to turn the column switch on. The column switch is connected to a plurality of data lines, excluding any defective data and redundant data lines during the test mode state.

摘要翻译： 提供一种半导体存储器件，其包括多个数据线，至少一个冗余数据线，一个公共数据线，安装在多个数据线与冗余数据线和一条公共数据线之间的多个列开关，以及 用于控制多个列开关的列解码器。 列解码器操作以打开列开关。 列开关连接到多个数据线，在测试模式状态期间不包括任何有缺陷的数据和冗余数据线。

公开(公告)号：US5410507A

公开(公告)日：1995-04-25

申请号：US977212

申请日：1992-11-16

申请人： Masanori Tazunoki ,  Shigetoshi Sakomura ,  Toshitsugu Takekuma ,  Yutaka Ito ,  Kazuya Ito ,  Wataru Arakawa ,  Hidetoshi Iwai ,  Toshiyuki Sakuta ,  Masamichi Ishihara

发明人： Masanori Tazunoki ,  Shigetoshi Sakomura ,  Toshitsugu Takekuma ,  Yutaka Ito ,  Kazuya Ito ,  Wataru Arakawa ,  Hidetoshi Iwai ,  Toshiyuki Sakuta ,  Masamichi Ishihara

IPC分类号： G11C11/4074 ,  G11C11/4076 ,  G11C13/00

CPC分类号： G11C11/4076 ,  G11C11/4074

摘要： A dynamic RAM provided with a data retention mode intended for low power consumption is provided. In the data retention mode, the current supply capabilities of voltage generation circuits which generate decreased voltage, increased voltage, reference voltage, etc., are limited in the range in which information retention operation in memory cells can be maintained, and the number of selected memory mats in the data retention mode is increased with respect to that of memory mats selected in the normal read/write mode and refresh mode. Special modes such as the data retention mode are set by combining an address strobe signal and other control signals and dummy CBR refresh is executed to release the special mode.

摘要翻译： 提供了具有旨在低功耗的数据保留模式的动态RAM。 在数据保持模式下，产生电压降低，电压升高，参考电压等的电压产生电路的电流供应能力在保持存储器单元的信息保持操作的范围内被限制，并且所选择的数量 相对于在正常读/写模式和刷新模式中选择的存储器垫，数据保持模式中的存储器垫增加。 通过组合地址选通信号和其他控制信号来设置数据保持模式等特殊模式，执行虚拟CBR刷新以释放特殊模式。

公开(公告)号：US5610089A

公开(公告)日：1997-03-11

申请号：US429868

申请日：1995-04-27

申请人： Hidetoshi Iwai ,  Kazumichi Mitsusada ,  Masamichi Ishihara ,  Tetsuro Matsumoto ,  Kazuyuki Miyazawa ,  Hisao Katto ,  Kousuke Okuyama

发明人： Hidetoshi Iwai ,  Kazumichi Mitsusada ,  Masamichi Ishihara ,  Tetsuro Matsumoto ,  Kazuyuki Miyazawa ,  Hisao Katto ,  Kousuke Okuyama

IPC分类号： H01L21/8238 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L27/10873 ,  H01L21/823864 ,  H01L27/0251 ,  H01L27/0266 ,  H01L27/0922 ,  H01L29/78 ,  H01L29/7836

摘要： Disclosed is a semiconductor device having an internal circuit protected by an electrostatic protective circuit, the internal circuit and electrostatic protective circuit being formed on the same semiconductor substrate. The internal circuit includes MIS elements and has a double-diffused drain structure, while the protective circuit has a single-diffused drain structure. The internal circuit can be, e.g., a DRAM, and the protective circuit can have diffused resistors and clamping MIS elements. The single-diffused drain structure can be formed in the protective circuit on the semiconductor substrate, while providing double-diffused drain structure in the internal circuit on the same substrate, by: (1) scanning the ion implanting apparatus to avoid ion implantation of the first ions into the region of the protective circuit, and/or (2) forming a photoresist film over the region of the protective circuit to prevent ion implanation of the first ions into the protective circuit region. As a further embodiment of the present invention, a semiconductor integrated circuit device is provided wherein the source and drain regions of an MOSFET in the internal circuit have lightly doped drain (LDD) structure in order to suppress the appearance of hot carriers, and the source and drain regions of an MOSFET in the input/output circuit have structure doped with phosphorus at a high impurity concentration, in order to enhance an electrostatic breakdown voltage.

摘要翻译： 公开了具有被静电保护电路保护的内部电路的半导体器件，内部电路和静电保护电路形成在同一半导体衬底上。 内部电路包括MIS元件，并具有双扩散漏极结构，而保护电路具有单扩散漏极结构。 内部电路可以是例如DRAM，并且保护电路可以具有扩散电阻器和钳位MIS元件。 单扩散漏极结构可以形成在半导体衬底上的保护电路中，同时通过以下步骤在同一衬底上的内部电路中提供双扩散漏极结构：（1）扫描离子注入装置以避免离子注入 第一离子进入保护电路的区域，和/或（2）在保护电路的区域上形成光致抗蚀剂膜，以防止第一离子离子注入保护电路区域。 作为本发明的另一实施例，提供了一种半导体集成电路器件，其中内部电路中的MOSFET的源极和漏极区域具有轻掺杂漏极（LDD）结构，以便抑制热载流子的出现，源极 并且输入/输出电路中的MOSFET的漏极区域掺杂有高杂质浓度的磷的结构，以增强静电击穿电压。

公开(公告)号：US5534723A

公开(公告)日：1996-07-09

申请号：US431568

申请日：1995-04-27

申请人： Hidetoshi Iwai ,  Kazumichi Mitsusada ,  Masamichi Ishihara ,  Tetsuro Matsumoto ,  Kazuyuki Miyazawa ,  Hisao Katto ,  Kousuke Okuyama

发明人： Hidetoshi Iwai ,  Kazumichi Mitsusada ,  Masamichi Ishihara ,  Tetsuro Matsumoto ,  Kazuyuki Miyazawa ,  Hisao Katto ,  Kousuke Okuyama

IPC分类号： H01L21/8238 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/092 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L21/823864 ,  H01L27/0251 ,  H01L27/0266 ,  H01L27/0922 ,  H01L27/10873 ,  H01L29/78

摘要： Disclosed is a semiconductor device having an internal circuit protected by an electrostatic protective circuit, the internal circuit and electrostatic protective circuit being formed on the same semiconductor substrate. The internal circuit includes MIS elements and has a double-diffused drain structure, while the protective circuit has a single-diffused drain structure. The internal circuit can be, e.g., a DRAM, and the protective circuit can have diffused resistors and clamping MIS elements. The single-diffused drain structure can be formed in the protective circuit on the semiconductor substrate, while providing double-diffused drain structure in the internal circuit on the same substrate, by: (1) scanning the ion implanting apparatus to avoid ion implantation of the first ions into the region of the protective circuit, and/or (2) forming a photoresist film over the region of the protective circuit to prevent ion implantation of the first ions into the protective circuit region. As a further embodiment of the present invention, a semiconductor integrated circuit device is provided wherein the source and drain regions of an MOSFET in the internal circuit have lightly doped drain (LDD) structure in order to suppress the appearance of hot carriers, and the source and drain regions of an MOSFET in the input/output circuit have structure doped with phosphorus at a high impurity concentration, in order to enhance an electrostatic breakdown voltage.

摘要翻译： 公开了具有被静电保护电路保护的内部电路的半导体器件，内部电路和静电保护电路形成在同一半导体衬底上。 内部电路包括MIS元件，并具有双扩散漏极结构，而保护电路具有单扩散漏极结构。 内部电路可以是例如DRAM，并且保护电路可以具有扩散电阻器和钳位MIS元件。 单扩散漏极结构可以形成在半导体衬底上的保护电路中，同时通过以下步骤在同一衬底上的内部电路中提供双扩散漏极结构：（1）扫描离子注入装置以避免离子注入 第一离子进入保护电路的区域，和/或（2）在保护电路的区域上形成光致抗蚀剂膜，以防止第一离子离子注入保护电路区域。 作为本发明的另一实施例，提供了一种半导体集成电路器件，其中内部电路中的MOSFET的源极和漏极区域具有轻掺杂漏极（LDD）结构，以便抑制热载流子的出现，源极 并且输入/输出电路中的MOSFET的漏极区域掺杂有高杂质浓度的磷的结构，以增强静电击穿电压。

公开(公告)号：US5436483A

公开(公告)日：1995-07-25

申请号：US142965

申请日：1993-10-29

申请人： Hidetoshi Iwai ,  Kazumichi Mitsusada ,  Masamichi Ishihara ,  Tetsuro Matsumoto ,  Kazuyuki Miyazawa ,  Hisao Katto ,  Kousuke Okuyama

发明人： Hidetoshi Iwai ,  Kazumichi Mitsusada ,  Masamichi Ishihara ,  Tetsuro Matsumoto ,  Kazuyuki Miyazawa ,  Hisao Katto ,  Kousuke Okuyama

IPC分类号： H01L21/8238 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/092 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L21/823864 ,  H01L27/0251 ,  H01L27/0266 ,  H01L27/0922 ,  H01L27/10873 ,  H01L29/78

摘要： Disclosed is a semiconductor device having an internal circuit protected by an electrostatic protective circuit, the internal circuit and electrostatic protective circuit being formed on the same semiconductor substrate. The internal circuit includes MIS elements and has a double-diffused drain structure, while the protective circuit has a single-diffused drain structure. The internal circuit can be, e.g., a DRAM, and the protective circuit can have diffused resistors and clamping MIS elements. The single-diffused drain structure can be formed in the protective circuit on the semiconductor substrate, while providing double-diffused drain structure in the internal circuit on the same substrate, by: (1) scanning the ion implanting apparatus to avoid ion implantation of the first ions into the region of the protective circuit, and/or (2) forming a photoresist film over the region of the protective circuit to prevent ion implanation of the first ions into the protective circuit region. As a further embodiment of the present invention, a semiconductor integrated circuit device is provided wherein the source and drain regions of an MOSFET in the internal circuit have lightly doped drain (LDD) structure in order to suppress the appearance of hot carriers, and the source and drain regions of an MOSFET in the input/output circuit have structure doped with phosphorus at a high impurity concentration, in order to enhance an electrostatic breakdown voltage.

摘要翻译： 公开了具有被静电保护电路保护的内部电路的半导体器件，内部电路和静电保护电路形成在同一半导体衬底上。 内部电路包括MIS元件，并具有双扩散漏极结构，而保护电路具有单扩散漏极结构。 内部电路可以是例如DRAM，并且保护电路可以具有扩散电阻器和钳位MIS元件。 单扩散漏极结构可以形成在半导体衬底上的保护电路中，同时通过以下步骤在同一衬底上的内部电路中提供双扩散漏极结构：（1）扫描离子注入装置以避免离子注入 第一离子进入保护电路的区域，和/或（2）在保护电路的区域上形成光致抗蚀剂膜，以防止第一离子离子注入保护电路区域。 作为本发明的另一实施例，提供了一种半导体集成电路器件，其中内部电路中的MOSFET的源极和漏极区域具有轻掺杂漏极（LDD）结构，以便抑制热载流子的出现，源极 并且输入/输出电路中的MOSFET的漏极区域掺杂有高杂质浓度的磷的结构，以增强静电击穿电压。