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公开(公告)号：US09847371B2
公开(公告)日：2017-12-19
申请号：US13146073
申请日：2010-02-12
Applicant: Chung Hoon Lee , Won Cheol Seo , Yeo Jin Yoon , Jin Cheol Shin
Inventor： Chung Hoon Lee , Won Cheol Seo , Yeo Jin Yoon , Jin Cheol Shin
CPC classification number: H01L27/153 , H01L33/62 , H01L2224/48091 , H01L2224/48137 , H05B33/0821 , H01L2924/00014
Abstract: A light emitting diode (LED) chip for high voltage operation and an LED package including the same are disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.
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2.发明授权Patterned substrate for light emitting diode and light emitting diode employing the same 有权用于发光二极管的图案衬底和采用其的发光二极管公开(公告)号：US08614458B2
公开(公告)日：2013-12-24
申请号：US12090050
申请日：2006-11-28
Applicant: Yeo Jin Yoon , Won Cheol Seo
Inventor： Yeo Jin Yoon , Won Cheol Seo
IPC: H01L33/00
CPC classification number: H01L33/20 , H01L33/005 , H01L33/22
Abstract: Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.
Abstract translation: 本文公开了用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外，凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此，突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失，从而提高光提取效率。
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公开(公告)号：US20130146929A1
公开(公告)日：2013-06-13
申请号：US13818267
申请日：2011-04-05
Applicant: Ye Seul Kim , Da Yeon Jeong , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh
Inventor： Ye Seul Kim , Da Yeon Jeong , Kyoung Wan Kim , Yeo Jin Yoon , Sang Hyun Oh
IPC: H01L33/60
Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.
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4.发明申请PHARMACEUTICAL COMPOSITION FOR INHIBITING APOPTOSIS OF NEURON OR NEURODEGENERATION 有权用于抑制神经元或神经细胞凋亡的药物组合物公开(公告)号：US20130046001A1
公开(公告)日：2013-02-21
申请号：US13695809
申请日：2011-05-03
Applicant: Cheol Hyoung Park , Hye Kyung Min , In Suk Park , Mi Jung Lim , Ji Won Lee , Jin Yong Chung , Yeo Jin Yoon , Joo Young Park
Inventor： Cheol Hyoung Park , Hye Kyung Min , In Suk Park , Mi Jung Lim , Ji Won Lee , Jin Yong Chung , Yeo Jin Yoon , Joo Young Park
CPC classification number: C07D261/08 , A61K31/4196 , A61K31/4245 , A61K31/433
Abstract: Provided is a pharmaceutical composition for inhibiting apoptosis of neurons or neurodegeneration. The pharmaceutical composition effectively prevents or treats diseases related to apoptosis of neurons or neurodegeneration.
Abstract translation: 提供了抑制神经元凋亡或神经变性的药物组合物。 药物组合物有效地预防或治疗与神经元凋亡相关的疾病或神经变性。
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公开(公告)号：US08049229B2
公开(公告)日：2011-11-01
申请号：US12173383
申请日：2008-07-15
Applicant: Yeo Jin Yoon
Inventor： Yeo Jin Yoon
IPC: H01L33/06
CPC classification number: H01L33/385 , H01L24/14 , H01L27/15 , H01L33/44 , H01L2224/05568 , H01L2224/05573 , H01L2924/00014 , H01L2924/12035 , H01L2924/12041 , H01L2924/00 , H01L2224/05599
Abstract: A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from static electricity. The light emitting diode includes a substrate, an n-type nitride semiconductor layer on the substrate, an active layer on the n-type nitride semiconductor layer, a p-type semiconductor layer on the active layer, a p-electrode on the p-type semiconductor layer, and an n-electrode formed from the n-type semiconductor layer, exposed by etching, to a portion of the p-type semiconductor layer.
Abstract translation: 发光二极管包括与有源层并联电连接的电流泄漏通道，以更好地保护发光二极管免受静电。 发光二极管包括衬底，衬底上的n型氮化物半导体层，n型氮化物半导体层上的有源层，有源层上的p型半导体层，p型p型半导体层， 型半导体层和由n型半导体层形成的n电极，通过蚀刻暴露于p型半导体层的一部分。
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Patent Agency Ranking
6.发明授权公开(公告)号：US07994523B2
公开(公告)日：2011-08-09
申请号：US12088999
申请日：2006-11-28
Applicant: Jae Ho Lee , Yeo Jin Yoon
Inventor： Jae Ho Lee , Yeo Jin Yoon
IPC: H01L33/00
CPC classification number: H01L27/153 , H01L25/0753 , H01L33/62 , H01L2224/48
Abstract: Disclosed is an AC light emitting diode having an improved transparent electrode structure. The light emitting diode comprises a plurality of light emitting cells formed on a single substrate, each of the light emitting cells having a first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. A transparent electrode structure is positioned on each of the light emitting cells. The transparent electrode structure includes at least two portions separated from each other, or a center portion and branches laterally extending from both sides of the center portion. Meanwhile, wires electrically connect adjacent two of the light emitting cells. Accordingly, a plurality of light emitting cells are electrically connected, whereby a light emitting diode can be provided which can be driven under AC power source. Also, an improved transparent electrode structure is employed, so that the current density can be prevented from being locally increased.
Abstract translation: 公开了具有改进的透明电极结构的AC发光二极管。 发光二极管包括形成在单个基板上的多个发光单元，每个发光单元具有第一导电型半导体层，位于第一导电型半导体层的一个区域上的第二导电型半导体层，以及 插入在第一和第二导电类型半导体层之间的有源层。 透明电极结构位于每个发光单元上。 透明电极结构包括彼此分离的至少两个部分或中心部分，并且从中心部分的两侧侧向延伸。 同时，电线电连接相邻的两个发光单元。 因此，多个发光单体电连接，从而可以提供可在交流电源下驱动的发光二极管。 此外，采用改进的透明电极结构，从而可以防止电流密度局部增加。
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公开(公告)号：US07977691B2
公开(公告)日：2011-07-12
申请号：US12630370
申请日：2009-12-03
Applicant: Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
Inventor： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC: H01L27/15
CPC classification number: H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
Abstract translation: 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。
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公开(公告)号：US07951626B2
公开(公告)日：2011-05-31
申请号：US12613275
申请日：2009-11-05
Applicant: Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
Inventor： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC: H01L27/15
CPC classification number: H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
Abstract: The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
Abstract translation: 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。
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公开(公告)号：US07723737B2
公开(公告)日：2010-05-25
申请号：US12568630
申请日：2009-09-28
Applicant: Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae-Won Kim
Inventor： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae-Won Kim
IPC: H01L33/00
CPC classification number: H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
Abstract: The present invention relates to a light emitting device. According to the present invention, the light emitting device comprises a substrate, a plurality of light emitting cells disposed on the substrate, a first insulation layer disposed on each light emitting cell, an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells, and a second insulation layer disposed on the electrically conductive material. Each light emitting cell comprises a first semiconductor layer, a second semiconductor layer, and an inclined surface. The second insulation layer corresponds to a contour of each light emitting cell.
Abstract translation: 本发明涉及一种发光装置。 根据本发明，发光器件包括衬底，设置在衬底上的多个发光单元，设置在每个发光单元上的第一绝缘层，设置在第一绝缘层上的导电材料，以将两个 所述发光单元以及设置在所述导电材料上的第二绝缘层。 每个发光单元包括第一半导体层，第二半导体层和倾斜表面。 第二绝缘层对应于每个发光单元的轮廓。
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10.发明授权公开(公告)号：US07700960B2
公开(公告)日：2010-04-20
申请号：US12605146
申请日：2009-10-23
Applicant: Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
Inventor： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
CPC classification number: H01L33/42 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
Abstract translation: 本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。 根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。 本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。
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