摘要:
A high-speed bus interface with an adaptive swing driver. A high speed interface includes a transmitter and a receiver coupled via a bus. The transmitter has an adaptive swing driver and a voltage-regulating-module (VRM). The adaptive swing driver includes a post-driver and a pre-driver. The post-driver provides an adaptive swing output with a dedicated adaptive voltage power supply (VDDQ) and transition emphasis driving capacity with an internal logic voltage supply (VDD). The pre-driver provides the transition emphasis driving capacity with a pull-up and a pull-down signal path to the post-driver. The voltage-regulating-module is configured to supply signal to the adaptive swing driver. The receiver includes a comparator and a bit-error-rate detector. The comparator amplifies the adaptive swing output received from the transmitter via a bus, while the bit-error-rate detector diagnoses the amplified adaptive swing output received from the comparator.
摘要:
An embodiment is an integrated circuit. The integrated circuit comprises a clock generator and data transmission lines. The clock generator generates clock signals. At least some of the clock signals have a phase difference from an input clock signal input into the clock generator, and at least some of the clock signals have a different phase difference with respect to at least another of the clock signals. Each of the data transmission lines is triggered at least in part by at least one of the clock signals.
摘要:
An embodiment is an integrated circuit. The integrated circuit comprises a clock generator and data transmission lines. The clock generator generates clock signals. At least some of the clock signals have a phase difference from an input clock signal input into the clock generator, and at least some of the clock signals have a different phase difference with respect to at least another of the clock signals. Each of the data transmission lines is triggered at least in part by at least one of the clock signals.
摘要:
Some aspects of this disclosure provide for electronic design automation (EDA) techniques that check whether individual blocks, such as transistors or other semiconductor devices, are connected to their correct power domains during design. In this way, the disclosed EDA techniques can limit or prevent overstress conditions applied to blocks and help to improve reliability of integrated circuits, when manufactured.
摘要:
A circuit design system includes a schematic design tool configured to generate schematic information and pre-coloring information for a circuit. The circuit design system also includes a netlist file configured to store the schematic information and the pre-coloring information on a non-transitory computer readable medium and an extraction tool configured to extract the pre-coloring information from the netlist file. A layout design tool, included in the circuit design system, is configured to design at least one mask based on the schematic information and the pre-coloring information. The circuit design system further includes a layout versus schematic comparison tool configured to compare the at least one mask to the schematic information and the pre-coloring information.
摘要:
Some aspects of this disclosure provide for electronic design automation (EDA) techniques that check whether individual blocks, such as transistors or other semiconductor devices, are connected to their correct power domains during design. In this way, the disclosed EDA techniques can limit or prevent overstress conditions applied to blocks and help to improve reliability of integrated circuits, when manufactured.
摘要:
Among other things, one or more techniques for graded dummy insertion and a resulting array are provided herein. For example an array is a metal oxide semiconductor (MOS) array, a metal oxide metal (MOM) array, or a resistor array. In some embodiments, a first region and a second region are identified based on a density gradient between a first pattern density associated with the first region and a second pattern density associated with the second region. For example, the first pattern density and the second pattern density are gate densities and/or poly densities. To this end, a dummy region is inserted between the first region and the second region, the dummy region includes a graded pattern density based on a first adjacent pattern density and a second adjacent pattern density. In this manner, graded dummy insertion is provided, thus enhancing edge cell performance for an array, for example.
摘要:
A driver for a semiconductor chip, the driver having a drain wire with a first end and a second end and p and n-type transistors each with a source, gate and drain. The source of the p-type transistors connected to a positive power supply line, the source of the n-type transistors connected to a ground power supply line. The gates of the p and n-type transistors connected to a first and second input signals respectively. The drains of the p and n-type transistors connected to the drain wire. The p and n-type transistors arranged so that a difference between a number of n-type transistors connected to the drain wire and a number of p-type transistors connected to the drain wire between the first end of the drain wire and all distances along the drain wire being less than two.
摘要:
This invention relates to an insulator for a multi-power system, which is used to resolve the current leakage which comes from each power supplied to the corresponding devices which are not being correctly operated. The isolating device includes: a first power supply for providing an operating power to the isolating device; a level detector for detecting the voltage level of the operating power; a signal isolation controller for changing the output level of the circuit supplied by the operating power based on the operating power detected; and a second power for supplying a real-time power to circuit for power saving operation based on the changed output level.
摘要:
A latch-up protection circuit for an integrated circuit powered through a first power rail and a second power rail is disclosed, the integrated circuit having at least one semiconductor bulk of a conductivity type. The latch-up protection circuit comprises a control circuit and a switch circuit. The control circuit is connected to the first power rail and the second power rail for detecting a relative voltage therebetween and generating a first control signal and a second control signal. The switch circuit connected to the first power rail and the control circuit. When the relative voltage is greater than a first predetermined value, the switch circuit in response to the first control signal electrically connects the first power rail with the at least one semiconductor bulk. When the relative voltage is smaller than the first predetermined value, the switch in response to the first control signal electrically disconnects the first power rail from the at least one semiconductor bulk.