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公开(公告)号：US20130008868A1
公开(公告)日：2013-01-10
申请号：US13541167
申请日：2012-07-03
申请人： Yoshihiro UOZUMI , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
发明人： Yoshihiro UOZUMI , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
CPC分类号： H01L21/67075 , G03F7/162 , G03F7/405 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67098 , H01L21/6715 , H01L21/67739 , H01L21/68
摘要： According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
摘要翻译： 根据一个实施例，公开了一种基板处理方法。 该方法可以包括用第一液体处理底物。 衬底具有形成在衬底的主表面上的结构体。 该方法可以包括通过使第二液体与由第一液体润湿的基底接触而形成支撑结构体的支撑构件，并且通过执行至少一个将第二液体的至少一部分变为固体， 第二液体反应，减少包含在第二液体中的溶剂的量，并使溶解在第二液体中的物质的至少一部分被分离。 该方法可以包括通过将支撑构件的至少一部分从固相改变为气相而不通过液相来移除支撑构件。
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公开(公告)号：US09213242B2
公开(公告)日：2015-12-15
申请号：US13541167
申请日：2012-07-03
申请人： Yoshihiro Uozumi , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
发明人： Yoshihiro Uozumi , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
CPC分类号： H01L21/67075 , G03F7/162 , G03F7/405 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67098 , H01L21/6715 , H01L21/67739 , H01L21/68
摘要： According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
摘要翻译： 根据一个实施例，公开了一种基板处理方法。 该方法可以包括用第一液体处理底物。 衬底具有形成在衬底的主表面上的结构体。 该方法可以包括通过使第二液体与由第一液体润湿的基底接触而形成支撑结构体的支撑构件，并且通过执行至少一个将第二液体的至少一部分变为固体， 第二液体反应，减少包含在第二液体中的溶剂的量，并使溶解在第二液体中的物质的至少一部分被分离。 该方法可以包括通过将支撑构件的至少一部分从固相改变为气相而不通过液相来移除支撑构件。
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公开(公告)号：US08399357B2
公开(公告)日：2013-03-19
申请号：US13238997
申请日：2011-09-21
IPC分类号： H01L21/44
CPC分类号： H01L21/02071 , H01L21/02057 , H01L21/265 , H01L21/31133 , H01L27/1052
摘要： A method of manufacturing a semiconductor device is disclosed. The method forms a semiconductor device including a workpiece structure having a first region and second region located adjacent to the first region formed therein. The first region includes a first pattern and the second region includes a second pattern having at least a greater pattern width or a smaller aspect ratio than the first pattern. The method includes forming the first pattern by providing a first film having a first contact angle at a top portion thereof and the second pattern by providing a second film having a second contact angle less than the first contact angle at a top portion thereof; cleaning the first and the second regions by a chemical liquid; rinsing the cleaned first and the second regions by a rinse liquid; and drying the rinsed first and the second regions.
摘要翻译： 公开了制造半导体器件的方法。 该方法形成半导体器件，该半导体器件包括具有第一区域的工件结构和与形成在其中的第一区域相邻的第二区域。 第一区域包括第一图案，第二区域包括具有比第一图案至少更大的图案宽度或更小的纵横比的第二图案。 该方法包括：通过在其顶部提供具有小于第一接触角的第二接触角的第二膜，通过提供在其顶部具有第一接触角的第一膜和第二图案来形成第一图案; 用化学液体清洗第一和第二区域; 用漂洗液冲洗净化的第一和第二区域; 并干燥漂洗的第一和第二区域。
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公开(公告)号：US08435903B2
公开(公告)日：2013-05-07
申请号：US13069164
申请日：2011-03-22
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0206 , H01L21/0337 , H01L21/31133 , H01L21/67028 , H01L27/11531
摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
摘要翻译： 在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。 半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。 该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。 该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜 并释放抗蚀剂。 此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。
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公开(公告)号：US20110269313A1
公开(公告)日：2011-11-03
申请号：US13069164
申请日：2011-03-22
IPC分类号： H01L21/3065
CPC分类号： H01L21/0206 , H01L21/0337 , H01L21/31133 , H01L21/67028 , H01L27/11531
摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
摘要翻译： 在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。 半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。 该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。 该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜 并释放抗蚀剂。 此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。
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公开(公告)号：US20110143541A1
公开(公告)日：2011-06-16
申请号：US12886427
申请日：2010-09-20
IPC分类号： H01L21/308 , B08B3/08 , B08B3/02
CPC分类号： H01L21/0206 , H01L21/02043 , H01L21/02211 , H01L21/31116 , H01L21/32135 , H01L21/67028
摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.
摘要翻译： 在一个实施例中，处理半导体衬底的表面的设备包括基板保持和旋转单元，第一至第四供电单元和去除单元。 基板保持旋转单元保持在其表面上形成有凸起图案并使半导体基板旋转的半导体基板。 第一供给单元向半导体基板的表面供给化学品，以清洁半导体基板。 第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。 第三供给单元向半导体基板的表面供给防水剂，以在凸形图案的表面上形成防水保护膜。 为了冲洗半导体衬底，第四供应单元将用纯水或酸性水稀释的酒精提供给半导体衬底的表面。 去除单元除去留下凸起图案的防水保护膜。
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公开(公告)号：US20120088357A1
公开(公告)日：2012-04-12
申请号：US13238997
申请日：2011-09-21
IPC分类号： H01L21/265 , H01L21/308
CPC分类号： H01L21/02071 , H01L21/02057 , H01L21/265 , H01L21/31133 , H01L27/1052
摘要： A method of manufacturing a semiconductor device is disclosed. The method forms a semiconductor device including a workpiece structure having a first region and second region located adjacent to the first region formed therein. The first region includes a first pattern and the second region includes a second pattern having at least a greater pattern width or a smaller aspect ratio than the first pattern. The method includes forming the first pattern by providing a first film having a first contact angle at a top portion thereof and the second pattern by providing a second film having a second contact angle less than the first contact angle at a top portion thereof; cleaning the first and the second regions by a chemical liquid; rinsing the cleaned first and the second regions by a rinse liquid; and drying the rinsed first and the second regions.
摘要翻译： 公开了制造半导体器件的方法。 该方法形成半导体器件，该半导体器件包括具有第一区域的工件结构和与形成在其中的第一区域相邻的第二区域。 第一区域包括第一图案，第二区域包括具有比第一图案至少更大的图案宽度或更小的纵横比的第二图案。 该方法包括：通过在其顶部提供具有小于第一接触角的第二接触角的第二膜，通过提供在其顶部具有第一接触角的第一膜和第二图案来形成第一图案; 用化学液体清洗第一和第二区域; 用漂洗液冲洗净化的第一和第二区域; 并干燥漂洗的第一和第二区域。
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公开(公告)号：US20110143545A1
公开(公告)日：2011-06-16
申请号：US12879097
申请日：2010-09-10
IPC分类号： H01L21/306 , B08B3/00
CPC分类号： H01L21/02057 , H01L21/67017 , H01L21/67028 , H01L21/67051
摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon and rotates the semiconductor substrate, a first supply unit which supplies a chemical and/or pure water to the surface of the semiconductor substrate, and a second supply unit which supplies a diluted water repellent to the surface of the semiconductor substrate to form a water-repellent protective film on the surface of the convex pattern. The second supply unit comprises a buffer tank which stores the water repellent, a first supply line which supplies a purge gas to the buffer tank, a second supply line which supplies a diluent, a pump which sends off the water repellent within the buffer tank, a third supply line which supplies the water repellent sent off from the pump, and a mixing valve which mixes the diluent and the water repellent to produce the diluted water repellent.
摘要翻译： 在一个实施例中，处理半导体衬底的表面的设备包括：衬底保持和旋转单元，其保持具有形成在其上的凸起图案的表面的半导体衬底，并使半导体衬底旋转，提供化学品的第一供应单元和 /或纯水，以及第二供给单元，其向半导体基板的表面供给稀释斥水剂，以在凸形图案的表面上形成防水保护膜。 第二供应单元包括缓冲罐，其存储防水剂，向缓冲罐供应净化气体的第一供应管线，供应稀释剂的第二供应管线，在缓冲罐内排出拒水剂的泵， 供给从泵送出的防水剂的第三供给管路和将稀释剂与防水剂混合而制成稀释斥水剂的混合阀。
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公开(公告)号：US20100044343A1
公开(公告)日：2010-02-25
申请号：US12545541
申请日：2009-08-21
申请人： Hiroshi Tomita , Linan Ji , Hisashi Okuchi , Tatsuhiko Koide , Hiroyasu Iimori , Hidekazu Hayashi
发明人： Hiroshi Tomita , Linan Ji , Hisashi Okuchi , Tatsuhiko Koide , Hiroyasu Iimori , Hidekazu Hayashi
IPC分类号： C03C15/00
CPC分类号： C03C15/00 , H01L21/67028 , H01L21/67126
摘要： A substrate treatment apparatus for treating a substrate on which a plurality of patterns are formed adjacently, has a first chamber which has resistance to a chemical and cleans the substrate with the chemical; a second chamber which is disposed above or below the first chamber, has higher pressure resistance than the first chamber, and supercritically dries the substrate; and a gate unit which is provided between the first and second chambers and can be opened/closed.
摘要翻译： 一种用于处理其上形成有多个图案的基板的基板处理装置，具有耐化学品的第一室，并且用该化学品清洁该基板; 设置在第一室的上方或下方的第二室具有比第一室更高的耐压性，并且对基板进行超临界干燥; 以及设置在第一和第二室之间并可以打开/关闭的门单元。
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公开(公告)号：US20100240219A1
公开(公告)日：2010-09-23
申请号：US12801178
申请日：2010-05-26
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/306
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
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