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    SEMICONDUCTOR MANUFACTURING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
    3.
    发明申请
    SEMICONDUCTOR MANUFACTURING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE 审中-公开
    半导体制造装置，制造半导体器件的方法和制造电子器件的方法

    公开(公告)号：US20120231562A1

    公开(公告)日：2012-09-13

    申请号：US13408293

    申请日：2012-02-29

    申请人： Yukari Takeya ,  Hayato Iwamoto ,  Yoshiya Hagimoto ,  Eizo Motooka

    发明人： Yukari Takeya ,  Hayato Iwamoto ,  Yoshiya Hagimoto ,  Eizo Motooka

    IPC分类号： H01L21/66 ,  B05C11/00

    摘要： A semiconductor manufacturing apparatus includes: a treatment chamber treating a treated film of a wafer using a desired chemical fluid; a film thickness measurement unit measuring an initial film thickness of the treated film before treatment and a final film thickness of the treated film after treatment; and a main body controlling unit calculating a treatment speed of the chemical fluid from the initial film thickness, the final film thickness, and a chemical fluid treatment time taken from the initial film thickness to the final film thickness to calculate a chemical fluid treatment time for a wafer to be treated next from the calculated treatment speed.

    摘要翻译： 半导体制造装置包括：使用期望的化学流体处理晶片的处理膜的处理室; 测量处理前处理膜的初始膜厚和处理后处理膜的最终膜厚的膜厚测量单元; 以及主体控制单元，其从初始膜厚度，最终膜厚度和从初始膜厚度到最终膜厚度的化学流体处理时间计算化学流体的处理速度，以计​​算化学流体处理时间， 接下来从计算出的处理速度处理待处理的晶片。

    SUBSTRATE TREATMENT METHOD
    4.
    发明申请
    SUBSTRATE TREATMENT METHOD 审中-公开
    基板处理方法

    公开(公告)号：US20120077348A1

    公开(公告)日：2012-03-29

    申请号：US13311617

    申请日：2011-12-06

    申请人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

    发明人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

    IPC分类号： H01L21/306 ,  B08B3/08

    CPC分类号： H01L21/02052 ,  H01L21/31133

    摘要： There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

    摘要翻译： 提供了一种基板处理方法，用于通过将药液供给到基板的表面进行处理，其中在将化学液体供给到基板的预定区域之前，具有低于化学品的电阻率的液体物质 将液体供给到基板的表面，使得液体物质至少润湿预定面积，然后将化学液体供给到预定区域，使得在基板上进行处理，并将化学液体供给到表面 的基底。

    Substrate treatment method
    5.
    发明申请
    Substrate treatment method 失效
    底物处理方法

    公开(公告)号：US20070105242A1

    公开(公告)日：2007-05-10

    申请号：US11542138

    申请日：2006-10-04

    申请人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

    发明人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02052 ,  H01L21/31133

    摘要： There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

    摘要翻译： 提供了一种基板处理方法，用于通过将药液供给到基板的表面进行处理，其中在将化学液体供给到基板的预定区域之前，具有低于化学品的电阻率的液体物质 将液体供给到基板的表面，使得液体物质至少润湿预定面积，然后将化学液体供给到预定区域，使得在基材上进行处理，并将化学液体供给到表面 的基底。

    Substrate treatment method
    6.
    发明授权
    Substrate treatment method 失效
    底物处理方法

    公开(公告)号：US08088693B2

    公开(公告)日：2012-01-03

    申请号：US11542138

    申请日：2006-10-04

    申请人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

    发明人： Yoshimichi Shiki ,  Seiji Oda ,  Hayato Iwamoto ,  Yoshiya Hagimoto

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02052 ,  H01L21/31133

    摘要： There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

    摘要翻译： 提供了一种基板处理方法，用于通过将药液供给到基板的表面进行处理，其中在将化学液体供给到基板的预定区域之前，具有低于化学品的电阻率的液体物质 将液体供给到基板的表面，使得液体物质至少润湿预定面积，然后将化学液体供给到预定区域，使得在基板上进行处理，并将化学液体供给到表面 的基底。

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20110269280A1

    公开(公告)日：2011-11-03

    申请号：US13181583

    申请日：2011-07-13

    申请人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

    发明人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/82385 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823835 ,  H01L21/823857 ,  H01L21/823871 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

    摘要翻译： 一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

    Semiconductor device and a method of manufacturing the same
    8.
    发明授权
    Semiconductor device and a method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07994603B2

    公开(公告)日：2011-08-09

    申请号：US12168427

    申请日：2008-07-07

    申请人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

    发明人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

    IPC分类号： H01L21/70

    CPC分类号： H01L21/82385 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823835 ,  H01L21/823857 ,  H01L21/823871 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

    摘要翻译： 本文公开了一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

    Semiconductor device and a method of manufacturing the same
    9.
    发明授权
    Semiconductor device and a method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08367503B2

    公开(公告)日：2013-02-05

    申请号：US13181583

    申请日：2011-07-13

    申请人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

    发明人： Junli Wang ,  Tomoyuki Hirano ,  Toyotaka Kataoka ,  Yoshiya Hagimoto

    IPC分类号： H01L21/00

    CPC分类号： H01L21/82385 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L21/823835 ,  H01L21/823857 ,  H01L21/823871 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

    摘要翻译： 一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。