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公开(公告)号：US06507365B1
公开(公告)日：2003-01-14
申请号：US09450749
申请日：1999-11-30
申请人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
发明人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
IPC分类号： H04N314
CPC分类号： H04N5/361 , H04N5/23274 , H04N5/2357 , H04N5/3452 , H04N5/3454 , H04N5/353 , H04N5/374
摘要： A solid-state imaging device with a variable (continuous) electronic shutter function comprises an imaging area where unit cells with photodiodes acting as pixels are arranged two-dimensionally, read lines for driving the read transistors in each pixel row, vertical selection lines for driving the vertical selection transistors in each pixel row, a vertical driving circuit for selectively driving vertical selection lines, vertical signal lines for outputting the signal from each unit cell in the pixel rows driven sequentially, and a row selection circuit for controlling the vertical driving circuit in such a manner that the vertical driving circuit drives the read transistors in each pixel row with the desired signal storage timing and signal read timing twice in that order and thereby drives the vertical selection transistors in the pixel row in synchronization with the signal read timing.
摘要翻译： 具有可变（连续）电子快门功能的固态成像装置包括成像区域，其中以二维作为像素的光电二极管的单位单元被二维布置，用于驱动每个像素行中的读取晶体管的读取线，用于驱动的垂直选择线 每个像素行中的垂直选择晶体管，用于选择性地驱动垂直选择线的垂直驱动电路，用于输出依次驱动的像素行中的每个单元的信号的垂直信号线和用于控制垂直驱动电路的行选择电路 垂直驱动电路以期望的信号存储定时和信号读取定时以该顺序驱动每个像素行中的读取晶体管，从而与信号读取定时同步地驱动像素行中的垂直选择晶体管。
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公开(公告)号：US5572256A
公开(公告)日：1996-11-05
申请号：US275748
申请日：1994-07-20
申请人： Yoshitaka Egawa , Yukio Endo , Yoshiyuki Matsunaga
发明人： Yoshitaka Egawa , Yukio Endo , Yoshiyuki Matsunaga
CPC分类号： H04N5/2353 , H04N5/235 , H04N5/35581
摘要： A solid-state imaging apparatus which effects an electronic shutter operation comprises a solid-state imaging device made up of a plurality of photosensitive pixels arranged in a matrix on a semiconductor substrate, a driving circuit for driving the solid-state imaging device and also controlling the photoelectric conversion time of the photosensitive pixel, a vertical CCD for clipping a first signal obtained during a longer photoelectric conversion time in the solid-state imaging device, at a specified level or above, and then adding the clipped signal to a second signal obtained during a shorter photoelectric conversion time, and a signal processing circuit for amplifying and outputting the added signal, and setting an amplification degree for the second signal to a value larger than an amplification factor for the first signal.
摘要翻译： 实现电子快门操作的固态成像装置包括由在半导体衬底上以矩阵排列的多个感光像素构成的固态成像装置，用于驱动固态成像装置的驱动电路，并且还控制 光敏像素的光电转换时间，用于将在固态成像装置中的较长光电转换时间期间获得的第一信号削减到指定电平或以上的垂直CCD，然后将所述限幅信号与获得的第二信号相加 在较短的光电转换时间期间，以及信号处理电路，用于放大并输出相加的信号，并将第二信号的放大度设置为大于第一信号的放大系数的值。
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公开(公告)号：US4543489A
公开(公告)日：1985-09-24
申请号：US706254
申请日：1985-02-28
申请人： Nozomu Harada , Yukio Endo , Okio Yoshida , Yoshiyuki Matsunaga
发明人： Nozomu Harada , Yukio Endo , Okio Yoshida , Yoshiyuki Matsunaga
IPC分类号： H01L27/146 , H04N3/15 , H04N9/04 , H01J40/14
CPC分类号： H01L27/14667 , H01L27/14665 , H04N3/15 , H04N9/045
摘要： A solid state image sensor with a plurality of cells comprising a photoelectric converting film formed on a semiconductor substrate for photoelectrically converting incoming light rays to generate signal charge, signal charge storage areas for storing said signal charge formed in said substrate, signal charge read out areas for reading out said signal charge from said storage area, conductor electrodes for making said photoelectric converting film electrically contact with said signal charge storage areas to lead said signal charge from said photoelectric converting film to said storage areas, and series of said conductor electrodes arranged along at least two or more row lines in a matrix of said conductor electrodes being displayed in the row direction by 1/2 of the length of one electrode one from the other as viewed in the column direction.
摘要翻译： 一种具有多个单元的固态图像传感器，包括形成在半导体基板上的用于光电转换入射光线以产生信号电荷的光电转换膜，用于存储形成在所述基板中的所述信号电荷的信号电荷存储区域，信号电荷读出区域 用于从所述存储区域读出所述信号电荷，用于使所述光电转换膜与所述信号电荷存储区域电接触的导体电极将所述信号电荷从所述光电转换膜引导到所述存储区域，并且所述导体电极串联布置 所述导体电极的矩阵中的至少两条或更多条行线沿着列方向从行方向显示为一个电极的长度的1/2。
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公开(公告)号：US5446493A
公开(公告)日：1995-08-29
申请号：US207267
申请日：1994-03-09
IPC分类号： H01L27/148 , H04N5/341 , H04N5/372 , H04N5/335
CPC分类号： H04N3/1531 , H01L27/14831
摘要： A solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements. Each gate elements changes transfer direction from one of the first transfer elements between at least two of the second transfer elements based on the sampling mode for the incident image. Third transfer elements are formed adjacent to the temporary storage region. The third transfer elements repeat a readout cycle of receiving the signal charges from a plurality of second transfer elements and then transferring them out.
摘要翻译： 固态图像传感器具有形成在基板上的感光区域。 感光区域具有用于接收入射图像的多个光电管。 光敏区域能够通过相对移动用于入射图像的图像采样点来改变图像采样模式。 在感光区域中，形成多个第一传送元件，并且第一传送元件接收来自相邻光电元件的信号电荷并将其传送出去。 此外，在其中具有用于每个第一转印元件的多个第二转印元件的基板上形成临时存储区域。 每个第二传送元件具有容纳同时从光电管读出的对应的第一传送元件的所有信号电荷的能力。 分别在每个第一传送元件和它们对应的多个第二传送元件之间形成多个栅极元件。 每个门元件基于入射图像的采样模式，在至少两个第二传送元件之间从第一传送元件之一改变传送方向。 在临时存储区域附近形成第三传送元件。 第三传送元件重复从多个第二传送元件接收信号电荷然后将其传送出去的读出周期。
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公开(公告)号：US5438211A
公开(公告)日：1995-08-01
申请号：US220708
申请日：1994-03-31
IPC分类号： H01L29/768 , H01L29/78
CPC分类号： H01L29/76816 , H01L29/76841
摘要： A charge-transfer device contains a high-resistance p-well layer formed in the surface of an n-type semiconductor substrate. In the surface of the well layer, a charge-transfer n-channel layer, a charge storage n-channel layer, a charge release n-channel layer, and a charge release n-type drain are formed continuously. An output gate electrode is provided above the junction of the transfer channel layer and the storage channel layer, with an insulating film interposed therebetween. Provided above the release channel layer is a reset gate electrode with an insulating film interposed therebetween. In the surface of the storage channel layer, a charge-sensing p-channel layer of a charge-sensing transistor is formed. The charge-sensing channel layer is arranged so as to be in contact with neither the transfer channel layer nor the release channel layer. The storage channel layer is arranged so as to contain a first surface portion which adjoins the transfer channel layer and is in contact with a covering insulating film, and a second surface portion which adjoins the release channel layer and is in contact with the covering insulating film. In the surface of the substrate, a p-type source and drain layers of the charge-sensing transistor are formed so as to face each other with the sensing channel interposed therebetween. The potential of the storage channel layer without charges is set higher than that of the release drain layer.
摘要翻译： 电荷转移装置包含在n型半导体衬底的表面上形成的高电阻p阱层。 在阱层的表面中连续地形成电荷传输n沟道层，电荷存储n沟道层，电荷释放n沟道层和电荷释放型n型漏极。 输出栅电极设置在传输沟道层和存储沟道层的结的上方，隔着绝缘膜。 在释放通道层上方设置有复位栅电极，其间具有绝缘膜。 在存储通道层的表面形成电荷感测晶体管的电荷感应p沟道层。 电荷感测沟道层被布置成与传输沟道层和释放通道层都不接触。 存储通道层被布置成包含邻接传输沟道层并与覆盖绝缘膜接触的第一表面部分和与释放通道层相邻并与覆盖绝缘膜接触的第二表面部分 。 在基板的表面中，电荷感测晶体管的p型源极和漏极层形成为彼此面对，并且其间插入感测通道。 没有电荷的存储通道层的电位被设定为高于释放漏极层的电位。
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6.发明授权Solid state image sensor having low and high level signal component detectors 失效具有低电平和高电平信号分量检测器的固态图像传感器
公开(公告)号：US5060070A
公开(公告)日：1991-10-22
申请号：US527444
申请日：1990-05-23
IPC分类号： H01L27/148 , H04N5/335 , H04N5/347 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378
CPC分类号： H04N3/1575 , H01L27/14831 , H04N5/335
摘要： A solid state image sensor comprises a CCD type image sensing device and a signal detector. This signal detector comprises an FDA type signal detection circuit connected to a signal pick-up terminal of the image sensing device and having a small amount of saturating signals and low noise, an FDA type signal detection circuit connected to the signal pick-up terminal and having a large amount of saturating signals and high noise, and a signal composing circuit for composing the outputs of both signal detection circuits and outputting a composed output and changing a composing ratio in accordance with the output of the FDA type signal detection circuit.
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公开(公告)号：US4996600A
公开(公告)日：1991-02-26
申请号：US363085
申请日：1989-06-08
申请人： Yasuaki Nishida , Yoshiki Iino , Hiroshi Ohtake , Masahide Abe , Shigeo Yoshikawa , Yukio Endo , Yoshiyuki Matsunaga , Nozomu Harada
发明人： Yasuaki Nishida , Yoshiki Iino , Hiroshi Ohtake , Masahide Abe , Shigeo Yoshikawa , Yukio Endo , Yoshiyuki Matsunaga , Nozomu Harada
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/355 , H04N5/357 , H04N5/3722 , H04N5/3725 , H04N5/3728 , H04N5/374
CPC分类号： H04N3/1575 , H04N3/1537
摘要： A solid state image sensing device comprises a great number of light receiving elements arrayed in rows and columns, a plurality of vertical CCD registers respectively coupled to columns of the light receiving elements for vertically transferring signal charges sensed by the light receiving elements, a horizontal CCD register for horizontally transferring the signal charges transferred from the vertical CCD register, an adder section for adding together signal charges obtained from a predetermined number of light receiving elements arrayed in columns and rows to form one added signal charge and for obtaining a plurality of added signal charges for all the light receiving elements in each of fields, and a field switcher for introducing signal charges obtained from an array of light receiving elements with at least one element shifted from the previous field to the adder section in each field.
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公开(公告)号：US4972254A
公开(公告)日：1990-11-20
申请号：US157718
申请日：1988-02-19
IPC分类号： H01L27/148 , H04N5/341 , H04N5/372
CPC分类号： H04N3/1531 , H01L27/14831
摘要： The solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements. Each gate elements changes transfer direction from one of the first transfer elements between at least two of the second transfer elements based on the sampling mode for the incident image. Third transfer elements are formed adjacent to the temporary storage region. The third transfer elements repeat a readout cycle of receiving the signal charges from a plurality of second transfer elements and then transferring them out.
摘要翻译： 固态图像传感器具有形成在基板上的感光区域。 感光区域具有用于接收入射图像的多个光电管。 光敏区域能够通过相对移动用于入射图像的图像采样点来改变图像采样模式。 在感光区域中，形成多个第一传送元件，并且第一传送元件接收来自相邻光电元件的信号电荷并将其传送出去。 此外，在其中具有用于每个第一转印元件的多个第二转印元件的基板上形成临时存储区域。 每个第二传送元件具有容纳同时从光电管读出的对应的第一传送元件的所有信号电荷的能力。 分别在每个第一传送元件和它们对应的多个第二传送元件之间形成多个栅极元件。 每个门元件基于入射图像的采样模式，在至少两个第二传送元件之间从第一传送元件之一改变传送方向。 在临时存储区域附近形成第三传送元件。 第三传送元件重复从多个第二传送元件接收信号电荷然后将其传送出去的读出周期。
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9.发明授权
公开(公告)号：US6037577A
公开(公告)日：2000-03-14
申请号：US38039
申请日：1998-03-11
CPC分类号： H04N5/374 , H04N5/35536 , H04N5/357 , H04N5/3658 , H04N5/378
摘要： An amplifying solid-state image pickup device comprises an image pickup region formed by two-dimensionally arranging photosensitive cells, each of the photosensitive cells including photoelectric conversion means, signal charge storage means, signal charge ejection means, row select means, and amplification means on a semiconductor substrate, a plurality of vertical select lines arranged in the image pickup region in a row direction, vertical select means for driving the plurality of vertical select lines, a plurality of vertical signal lines arranged in the column direction to read the outputs of the amplification means, noise suppression means provided at the ends of the plurality of vertical signal lines to capture and deduct noises and signals appearing on the plurality of vertical signal lines at time differences, horizontal select lines arranged in a column direction, horizontal read means for relaying the outputs of the horizontal select lines and the noise suppression means, horizontal select means for driving the horizontal read means, and charge adding means for adding the signal charges read to the vertical signal lines.
摘要翻译： 放大固态摄像装置包括通过二维布置感光单元形成的摄像区域，每个感光单元包括光电转换装置，信号电荷存储装置，信号电荷喷射装置，行选择装置和放大装置 半导体衬底，沿行方向布置在摄像区域中的多个垂直选择线，用于驱动多个垂直选择线的垂直选择装置，沿列方向排列的多个垂直信号线，以读取第 放大装置，设置在多个垂直信号线的端部处的噪声抑制装置，用于以时间差捕获和减去在多条垂直信号线上出现的噪声和信号，沿列方向布置的水平选择线，用于中继的水平读取装置 水平选择线的输出和噪声抑制装置，ho 用于驱动水平读取装置的雷管选择装置和用于将读取的信号电荷相加于垂直信号线的充电添加装置。
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公开(公告)号：US08319875B2
公开(公告)日：2012-11-27
申请号：US13007033
申请日：2011-01-14
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/2351
摘要： An imaging device outputs brightness information according to an amount of incident light and includes: an imaging unit that includes a plurality of unit cells arranged one dimensionally or two-dimensionally, each unit cell including a photoelectric conversion part that generates a first output voltage in a reset state and a second output voltage according to an amount of incident light, and each unit cell generating a reset voltage that corresponds to the first output voltage and a read voltage that corresponds to the second output voltage; and an output unit operable to output, in relation to each unit cell, brightness information indicating a difference between the reset voltage and the read voltage when normal light is incident to the imaging device and the read voltage is in a predetermined range, and brightness information indicating high brightness when strong light is incident to the imaging device and the read voltage is not in the predetermined range.
摘要翻译： 一种成像装置根据入射光的量输出亮度信息，并且包括：成像单元，其包括一维或二维布置的多个单位单元，每个单元包括光电转换部分，该光电转换部分生成第一输出电压 复位状态和第二输出电压，并且每个单元电池产生对应于第一输出电压的复位电压和对应于第二输出电压的读取电压; 以及输出单元，其可操作以相对于每个单位单元输出指示当正常光入射到所述成像装置并且所述读取电压处于预定范围时所述复位电压和所述读取电压之间的差的亮度信息，以及亮度信息 当强光入射到成像装置并且读取电压不在预定范围内时指示高亮度。
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