公开(公告)号：US20050274612A1

公开(公告)日：2005-12-15

申请号：US11145977

申请日：2005-06-06

申请人： Yuji Segawa ,  Tatsushiro Hirata

发明人： Yuji Segawa ,  Tatsushiro Hirata

IPC分类号： G01N21/64 ,  C12M1/00 ,  C12M1/34 ,  C12N15/09 ,  C12Q1/68 ,  G01N21/66 ,  G01N21/76 ,  G01N21/78 ,  G01N27/02 ,  G01N33/53 ,  G01N33/543 ,  G01N33/566 ,  G01N37/00 ,  G01N27/26

CPC分类号： G01N33/5438

摘要： Disclosure herein is a hybridization detecting unit including, a reaction area for providing a field for hybridization between nucleic acid for detection and target nucleic acid, and opposed electrodes disposed so that an electric field can be applied to a medium stored or retained in the reaction area, wherein an electrode surface of at least one of the opposed electrodes has depression parts.

摘要翻译： 本文公开的是杂交检测单元，其包括用于提供用于检测的核酸与靶核酸之间的杂交场的反应区域，以及设置为使得可以将电场施加到储存或保留在反应区域中的介质的相对电极 其中，所述相对电极中的至少一个的电极表面具有凹陷部。

公开(公告)号：US4882516A

公开(公告)日：1989-11-21

申请号：US137740

申请日：1987-12-24

申请人： Tatsushiro Hirata ,  Tomohisa Uba

发明人： Tatsushiro Hirata ,  Tomohisa Uba

IPC分类号： H01J29/02 ,  H01J29/06

CPC分类号： H01J29/06

摘要： A cathode ray tube having an internal magnetic shield formed of an inner magnetic plate and an outer magnetic plate which intersect at an acute angle, the distance from the upper terminal end of the inner magnetic plate to the inner surface of the panel, and the distance from the upper end of the outer magnetic plate to the inner surface of the panel being adjusted so as to satisfy a predetermined relationship, thus improving the magnetic shield effect.

摘要翻译： 一种阴极射线管，具有由内部磁性板和外部磁性板形成的内部磁屏蔽，该磁性屏蔽以锐角相交，从内部磁性板的上端部到面板内表面的距离， 从外磁板的上端到面板的内表面被调整为满足预定的关系，从而提高磁屏蔽效果。

公开(公告)号：US07704326B2

公开(公告)日：2010-04-27

申请号：US11004335

申请日：2004-12-02

申请人： Nobuo Hagiwara ,  Hideo Nagasaki ,  Tsutomu Mori ,  Tatsushiro Hirata ,  Hajime Yagi

发明人： Nobuo Hagiwara ,  Hideo Nagasaki ,  Tsutomu Mori ,  Tatsushiro Hirata ,  Hajime Yagi

IPC分类号： C23C16/00 ,  C23C16/04

CPC分类号： C23C14/042 ,  C23C14/12 ,  H01L27/3211 ,  H01L51/0011

摘要： A deposition mask with which position precision of a passage hole is improved and deposition can be conducted precisely and a manufacturing method thereof are provided. A mask body made of a metal thin film is fixed and tightly mounted on a frame body having an opening. The mask body has at least one pattern region including a plurality of passage holes for letting through a deposition material, a stress relaxation region including a plurality of fine holes provided at the periphery of the pattern region, and a holding region provided at the periphery of the stress relaxation region. The mask body is tightly mounted on the frame body at a holding region.

摘要翻译： 提供了通过孔的位置精度提高并且精确地进行沉积的沉积掩模及其制造方法。 由金属薄膜制成的面罩体固定并牢固地安装在具有开口的框体上。 荫罩主体具有至少一个图案区域，该图案区域包括多个通过沉积材料的通孔，包括设置在图案区域的周边的多个细孔的应力松弛区域和设置在图案区域周边的保持区域 应力松弛区域。 面罩体在保持区域紧密地安装在框体上。

公开(公告)号：US07507642B2

公开(公告)日：2009-03-24

申请号：US11747575

申请日：2007-05-11

申请人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

发明人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

IPC分类号： H01L21/322 ,  H01L21/22 ,  H01L21/38

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66242

摘要： In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

摘要翻译： 在半导体基板上沉积硅 - 锗混晶层的气相生长方法中，气相生长方法包括将硅原料气体引入反应炉的第一步骤，即将硅 原料气体分压与时间成比例地增加，从而在半导体衬底上沉积硅层的第一半导体层减压，第二步是将硅原料气体和锗原料气体引入反应炉中 可以获得期望的锗浓度，从而在减压下在第一半导体层上沉积硅 - 锗混合晶体层的第二半导体层，并且在减压下将硅原料气体引入反应炉中的第三步骤 从而在第二半导体层上沉积硅层的第三半导体层。 因此，可以获得其中可以提高失配位错的半导体层。

公开(公告)号：US07389188B2

公开(公告)日：2008-06-17

申请号：US11548363

申请日：2006-10-11

申请人： Akira Toda ,  Tatsushiro Hirata

发明人： Akira Toda ,  Tatsushiro Hirata

IPC分类号： G01F17/00 ,  G01F23/00

CPC分类号： G06F17/5018 ,  G06F2217/16

摘要： A fluid-structure coupled numerical simulation method is provided. The method uses a finite volume method employing an orthogonal mesh and a computer and memory setting a solid area based on a solid rate inside a mesh and at a tangent position to each mesh, including the steps of: setting initial and boundary conditions of a moving film structure; setting a velocity boundary in the tangent direction of the film structure by computing a position and shape thereof; and computing a curvature thereof. The method further includes the step of computing a pressure balance based on a balance between a pressure obtained from a fluid computation and a repulsive force obtained from the tension and curvature of the film structure to implement processing of a mutually-coupled phenomenon. A shift amount of the film surface for each time of said computing steps is simulated using the same program.

摘要翻译： 提供流体结构耦合数值模拟方法。 该方法使用采用正交网格的有限体积法和计算机和存储器，其基于网格内的固体速率和每个网格的切线位置来设置实心区域，包括以下步骤：设置移动的初始边界条件 电影结构; 通过计算胶片结构的位置和形状，在胶片结构的切线方向上设定速度边界; 并计算其曲率。 该方法还包括基于从流体计算获得的压力与从胶片结构的张力和曲率获得的排斥力之间的平衡来计算压力平衡的步骤，以实现相互耦合的现象的处理。 使用相同的程序来模拟所述计算步骤的每一次的胶片表面的移动量。

公开(公告)号：US07303979B2

公开(公告)日：2007-12-04

申请号：US10818821

申请日：2004-04-06

申请人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

发明人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

IPC分类号： H01L21/322

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66242

摘要： In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

摘要翻译： 在半导体基板上沉积硅 - 锗混晶层的气相生长方法中，气相生长方法包括将硅原料气体引入反应炉的第一步骤，即将硅 原料气体分压与时间成比例地增加，从而在半导体衬底上沉积硅层的第一半导体层减压，第二步是将硅原料气体和锗原料气体引入反应炉中 可以获得期望的锗浓度，从而在减压下在第一半导体层上沉积硅 - 锗混合晶体层的第二半导体层，并且在减压下将硅原料气体引入反应炉中的第三步骤 从而在第二半导体层上沉积硅层的第三半导体层。 因此，可以获得其中可以提高失配位错的半导体层。

公开(公告)号：US07157344B2

公开(公告)日：2007-01-02

申请号：US10204386

申请日：2001-12-20

申请人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

发明人： Hideo Yamagata ,  Takeyoshi Koumoto ,  Kenji Atsuumi ,  Yoichi Negoro ,  Tatsushiro Hirata ,  Takashi Noguchi

IPC分类号： H01L21/331

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66242

摘要： In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

公开(公告)号：US20050230788A1

公开(公告)日：2005-10-20

申请号：US11053650

申请日：2005-02-08

申请人： Yoshihiro Kato ,  Yoshinori Ito ,  Tatsushiro Hirata ,  Katsumi Okayama ,  Kaoru Kobayashi

发明人： Yoshihiro Kato ,  Yoshinori Ito ,  Tatsushiro Hirata ,  Katsumi Okayama ,  Kaoru Kobayashi

IPC分类号： H01L23/00 ,  G11C11/16 ,  H01L21/8246 ,  H01L23/552 ,  H01L27/105

CPC分类号： H01L23/552 ,  G11C11/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin. A planar shape or a sectional shape of magnetic shield plates provided on the sealing material in order to magnetically shield the MRAM is a shape in which a side substantially perpendicular to a direction of an outer magnetic field and a side substantially parallel to the direction of an outer magnetic field are not orthogonal to each other, in particular, circular, polygonal, or the like, whereby it is possible to relax magnetic saturation of the magnetic shield plate and keep the magnetic shield effect.

摘要翻译： 本发明的目的是松弛磁饱和，实现适用于MRAM等磁性装置的高性能磁屏蔽效果。 本发明的磁屏蔽部件适用于磁性随机存取存储器（MRAM），其中磁性随机存取存储器（MRAM）由通过堆积固定磁化方向的磁化固定层形成的TMR元件和磁性层组成，其中， 磁化方向可以改变，通过隧道阻挡层被树脂等密封材料密封。 设置在密封材料上以磁屏蔽MRAM的磁屏蔽板的平面形状或截面形状是这样的形状，其中，基本上垂直于外部磁场的方向的侧和基本上平行于 外部磁场彼此不正交，特别是圆形，多边形等，从而可以缓和磁屏蔽板的磁饱和并保持磁屏蔽效果。

公开(公告)号：US07598358B2

公开(公告)日：2009-10-06

申请号：US11368793

申请日：2006-03-06

申请人： Eriko Matsui ,  Yuriko Kaino ,  Toshiyuki Kunikiyo ,  Tatsushiro Hirata ,  Yoshifumi Mori

发明人： Eriko Matsui ,  Yuriko Kaino ,  Toshiyuki Kunikiyo ,  Tatsushiro Hirata ,  Yoshifumi Mori

IPC分类号： C09B45/00

CPC分类号： C07D207/32 ,  C07D207/323

摘要： A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.

摘要翻译： 显示低活化能的杂环芳族化合物的新型金属络合物在结构上是稳定的，能够调节其结构，并且能够优选在技术领域中用作分子装置。 杂环芳族化合物的金属络合物包含作为中心原子的过渡金属（例如银离子）和由5元杂环芳族化合物（例如吡咯环）构成的碱性配体，其中， 中心原子可以通过诸如电荷的转移或诸如施加电场的外部因素，周围环境的酸度变化等内部因素而改变，由此原子数（或数） 的电子）可以调节，并且在聚合时，可以根据中心原子的位置来调节构象。

公开(公告)号：US07459769B2

公开(公告)日：2008-12-02

申请号：US11053650

申请日：2005-02-08

申请人： Yoshihiro Kato ,  Yoshinori Ito ,  Tatsushiro Hirata ,  Katsumi Okayama ,  Kaoru Kobayashi

发明人： Yoshihiro Kato ,  Yoshinori Ito ,  Tatsushiro Hirata ,  Katsumi Okayama ,  Kaoru Kobayashi

IPC分类号： H01L23/00 ,  H01L23/02

CPC分类号： H01L23/552 ,  G11C11/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin. A planar shape or a sectional shape of magnetic shield plates provided on the sealing material in order to magnetically shield the MRAM is a shape in which a side substantially perpendicular to a direction of an outer magnetic field and a side substantially parallel to the direction of an outer magnetic field are not orthogonal to each other, in particular, circular, polygonal, or the like, whereby it is possible to relax magnetic saturation of the magnetic shield plate and keep the magnetic shield effect.

摘要翻译： 本发明的目的是松弛磁饱和，实现适用于MRAM等磁性装置的高性能磁屏蔽效果。 本发明的磁屏蔽部件适用于磁性随机存取存储器（MRAM），其中磁性随机存取存储器（MRAM）由通过将磁化固定层与磁化方向固定而形成的TMR元件和磁性层组成，其中， 磁化方向可以改变，通过隧道阻挡层被树脂等密封材料密封。 设置在密封材料上以磁屏蔽MRAM的磁屏蔽板的平面形状或截面形状是这样的形状，其中，基本上垂直于外部磁场的方向的侧和基本上平行于 外部磁场彼此不正交，特别是圆形，多边形等，从而可以缓和磁屏蔽板的磁饱和并保持磁屏蔽效果。