公开(公告)号：US20080141762A1

公开(公告)日：2008-06-19

申请号：US12068202

申请日：2008-02-04

申请人： Yuki Togashi ,  Osamu Shirota ,  Aya Ohkubo

发明人： Yuki Togashi ,  Osamu Shirota ,  Aya Ohkubo

IPC分类号： G01N30/16

CPC分类号： G01N35/1004 ,  B01L99/00 ,  G01N30/18 ,  G01N2035/00554

摘要： A sample injection apparatus and a liquid chromatography apparatus including the sample injection apparatus are provided. The sample injection apparatus includes a sampling vessel into which a sample is supplied, a sampling needle for aspirating and ejecting the sample, a cleaning part into which a cleaning liquid for cleaning at least the sampling needle is supplied, a sample injection part for injecting the sample ejected from the sampling needle into a moving liquid, and a needle transfer part for transferring the sampling needle among the sampling vessel, the cleaning part and the sample injection part, wherein the cleaning part includes an ultrasonic vibrator for generating an ultrasonic wave in the cleaning liquid.

摘要翻译： 提供了一种样品注射装置和包括样品注射装置的液相色谱装置。 样品注入装置包括：供给样品的取样容器，吸取和排出样品的取样针;至少提供采样针的清洗用清洗液的清洗部，将注射了样品的样品注入部， 从采样针喷射到移动液体中的样品和用于在采样容器，清洁部分和样品注入部分中传送采样针的针转移部分，其中清洁部分包括用于在所述采样管中产生超声波的超声波振动器 清洗液体。

公开(公告)号：US20060213257A1

公开(公告)日：2006-09-28

申请号：US10556391

申请日：2004-05-14

申请人： Yuki Togashi ,  Osamu Shirota ,  Aya Ohkubo

发明人： Yuki Togashi ,  Osamu Shirota ,  Aya Ohkubo

IPC分类号： G01N30/16 ,  G01N35/10 ,  G01N1/34

CPC分类号： G01N35/1004 ,  B01L99/00 ,  G01N30/18 ,  G01N2035/00554

摘要： A sample injection apparatus and sample injection method capable of sufficiently reducing carry-over, having simple cleaning means for a short cleaning time period, a small influence of vibration of the cleaning means, and a small error in the amount of injected sample and preventing the durability of a sampling needle from being lowered, and a liquid chromatography apparatus having the sample injection apparatus are provided. The sample injection apparatus has a sampling vessel 14 into which a sample is supplied, a sampling needle 10 for aspirating and ejecting the sample, a cleaning part 17 into which a cleaning liquid for cleaning at least the sampling needle 10 is supplied, a sample injection part 15 for injecting the sample ejected from the sampling needle 10 into a moving liquid, and needle transfer means for transferring the sampling needle 10 among the sampling vessel 4, the cleaning part 17 and the sample injection part 15, wherein the cleaning part 17 has an ultrasonic vibrator for generating an ultrasonic wave in the cleaning liquid.

摘要翻译： 一种能够充分降低携带量的样品注射装置和样品注射方法，具有清洁时间短的简单清洁装置，清洁装置的振动的小影响，以及注射的样品量的小误差，并防止 提供采样针的耐久性降低，并且提供具有样品注射装置的液相色谱装置。 样品注射装置具有供给样品的取样容器14，用于抽吸和抽出试样的取样针10，至少提供用于清洗的清洗液的清洗部17，样品注入 用于将从采样针10喷射的样品注入到移动液体中的部分15以及用于在取样容器4，清洁部17和样品注入部15中传送采样针10的针传送装置，其中清洁部17具有 用于在清洗液中产生超声波的超声波振动器。

公开(公告)号：US07500386B2

公开(公告)日：2009-03-10

申请号：US12068202

申请日：2008-02-04

申请人： Yuki Togashi ,  Osamu Shirota ,  Aya Ohkubo

发明人： Yuki Togashi ,  Osamu Shirota ,  Aya Ohkubo

IPC分类号： G01N30/16

CPC分类号： G01N35/1004 ,  B01L99/00 ,  G01N30/18 ,  G01N2035/00554

摘要： A sample injection apparatus and a liquid chromatography apparatus including the sample injection apparatus are provided. The sample injection apparatus includes a sampling vessel into which a sample is supplied, a sampling needle for aspirating and ejecting the sample, a cleaning part into which a cleaning liquid for cleaning at least the sampling needle is supplied, a sample injection part for injecting the sample ejected from the sampling needle into a moving liquid, and a needle transfer part for transferring the sampling needle among the sampling vessel, the cleaning part and the sample injection part, wherein the cleaning part includes an ultrasonic vibrator for generating an ultrasonic wave in the cleaning liquid.

摘要翻译： 提供了一种样品注射装置和包括样品注射装置的液相色谱装置。 样品注入装置包括：供给样品的取样容器，吸取和排出样品的取样针;至少提供采样针的清洗用清洗液的清洗部，将注射了样品的样品注入部， 从采样针喷射到移动液体中的样品和用于在采样容器，清洁部分和样品注入部分中传送采样针的针转移部分，其中清洁部分包括用于在所述采样管中产生超声波的超声波振动器 清洗液体。

公开(公告)号：US07337653B2

公开(公告)日：2008-03-04

申请号：US10556391

申请日：2004-05-14

申请人： Yuki Togashi ,  Osamu Shirota ,  Aya Ohkubo

发明人： Yuki Togashi ,  Osamu Shirota ,  Aya Ohkubo

IPC分类号： G01N30/16

CPC分类号： G01N35/1004 ,  B01L99/00 ,  G01N30/18 ,  G01N2035/00554

摘要： A sample injection apparatus and sample injection method capable of sufficiently reducing carry-over, having simple cleaning means for a short cleaning time period, a small influence of vibration of the cleaning means, and a small error in the amount of injected sample and preventing the durability of a sampling needle from being lowered, and a liquid chromatography apparatus having the sample injection apparatus are provided. The sample injection apparatus has a sampling vessel 14 into which a sample is supplied, a sampling needle 10 for aspirating and ejecting the sample, a cleaning part 17 into which a cleaning liquid for cleaning at least the sampling needle 10 is supplied, a sample injection part 15 for injecting the sample ejected from the sampling needle 10 into a moving liquid, and needle transfer means for transferring the sampling needle 10 among the sampling vessel 4, the cleaning part 17 and the sample injection part 15, wherein the cleaning part 17 has an ultrasonic vibrator for generating an ultrasonic wave in the cleaning liquid.

摘要翻译： 一种能够充分降低携带量的样品注射装置和样品注射方法，具有清洁时间短的简单清洁装置，清洁装置的振动的小影响，以及注射的样品量的小误差，并防止 提供采样针的耐久性降低，并且提供具有样品注射装置的液相色谱装置。 样品注射装置具有供给样品的取样容器14，用于抽吸和抽出试样的取样针10，至少提供用于清洗的清洗液的清洗部17，样品注入 用于将从采样针10喷射的样品注入到移动液体中的部分15以及用于在取样容器4，清洁部17和样品注入部15中传送采样针10的针传送装置，其中清洁部17具有 用于在清洗液中产生超声波的超声波振动器。

公开(公告)号：US20110189828A1

公开(公告)日：2011-08-04

申请号：US12926836

申请日：2010-12-13

申请人： Nobuyuki Sako ,  Eiji Hasunuma ,  Yuki Togashi

发明人： Nobuyuki Sako ,  Eiji Hasunuma ,  Yuki Togashi

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L21/28

摘要： A silicon layer is formed on a silicon substrate by an epitaxial growth, and, then a surface of the silicon layer is oxidized. The surface of the silicon layer is cleaned, to remove foreign material generated on the surface of the silicon layer during the epitaxial growth.

摘要翻译： 通过外延生长在硅衬底上形成硅层，然后硅层的表面被氧化。 在外延生长期间，清洁硅层的表面以除去在硅层的表面上产生的杂质。

公开(公告)号：US07298002B2

公开(公告)日：2007-11-20

申请号：US11165034

申请日：2005-06-24

申请人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

发明人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

IPC分类号： H01L27/108

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/90 ,  Y10S257/905

摘要： A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

摘要翻译： 半导体器件包括各自包括相应的圆柱形电极的圆柱形电容器。 每个圆柱形电极包括半球形硅晶粒。 从圆柱形电极的上部区域突出的半球形硅晶粒尺寸较大，从圆柱形电极的下部区域突出的半球形硅晶粒尺寸较小，或者圆柱形电极的下部区域没有半球形硅晶粒。

公开(公告)号：US20160118388A1

公开(公告)日：2016-04-28

申请号：US14890875

申请日：2014-05-09

申请人： Kazuaki TONARI ,  Yuki TOGASHI

发明人： Kazuaki Tonari ,  Yuki Togashi

IPC分类号： H01L27/108

CPC分类号： H01L27/10855 ,  H01L21/76897 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891 ,  H01L29/4236 ,  H01L29/66795

摘要： A first space partitioned by first and second line patters (52, 53) is filled with a multilayer film that is composed of a first silicon film (55) having a high impurity concentration (a first concentration) relative to a standard plug impurity concentration (a third concentration) and a second silicon film (57) having a low impurity concentration (a second concentration) relative to the standard plug impurity concentration, and is divided by forming a groove (59) using a mask film (58) on the side wall of the second line pattern (53). As a result, expansion of a seam, which is formed only on the second silicon film (57) having a low impurity concentration, is suppressed. After that, an isolation insulating film is embedded in the groove and impurity diffusion is carried out by a heat treatment, so that divided plugs (60) as a whole are made to have the third concentration.

摘要翻译： 由第一和第二线图案（52,53）分隔的第一空间填充有多层膜，该多层膜由相对于标准插塞杂质浓度的杂质浓度高（第一浓度）的第一硅膜（55） 第三浓度）和相对于标准插塞杂质浓度具有低杂质浓度（第二浓度）的第二硅膜（57），并且通过在侧面上使用掩模膜（58）形成凹槽（59） 第二线图案（53）的壁。 结果，抑制仅在具有低杂质浓度的第二硅膜（57）上形成的接缝的膨胀。 之后，将隔离绝缘膜嵌入槽中，通过热处理进行杂质扩散，从而使分割插塞（60）整体上具有第三浓度。

公开(公告)号：US08847400B2

公开(公告)日：2014-09-30

申请号：US13408318

申请日：2012-02-29

申请人： Osamu Fujita ,  Yuki Togashi

发明人： Osamu Fujita ,  Yuki Togashi

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/48 ,  H01L25/065 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/683 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L21/6835 ,  H01L21/30655 ,  H01L21/76232 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/17181 ,  H01L2224/73104 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/01047 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.

摘要翻译： 半导体器件包括材料层，该材料层包括在第一表面中具有开口的第一表面和沟槽。 沟槽形成在材料层中。 沟槽包括锥形部分和垂直部分。 锥形部分与开口接触并且包括扇形形成沟槽。 垂直部分具有基本垂直的侧壁。 扇形沟槽的宽度大于垂直部分的宽度。

公开(公告)号：US07888737B2

公开(公告)日：2011-02-15

申请号：US12360165

申请日：2009-01-27

申请人： Hiroyuki Fujimoto ,  Yuki Togashi

发明人： Hiroyuki Fujimoto ,  Yuki Togashi

IPC分类号： H01L27/12

CPC分类号： H01L23/535 ,  H01L21/28525 ,  H01L21/76879 ,  H01L21/84 ,  H01L27/0688 ,  H01L29/66772 ,  H01L29/7828 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a monocrystalline substrate; an inter-layer film formed on the monocrystalline substrate; a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate; a sidewall formed on an inner surface of the contact hole; a plurality of first monocrystalline layers which include few defects, fill the contact hole, and cover the inter-layer film; and a plurality of second monocrystalline layers which include many defects and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.

摘要翻译： 半导体器件包括：单晶衬底; 形成在单晶衬底上的层间膜; 穿透层间膜并且部分地暴露单晶衬底的上表面的接触孔; 形成在所述接触孔的内表面上的侧壁; 包含少量缺陷的多个第一单晶层，填充接触孔，并覆盖层间膜; 以及包含许多缺陷并覆盖层间膜的侧壁和上表面的多个第二单晶层，以夹在第一单晶层和层间膜之间。

公开(公告)号：US20060022251A1

公开(公告)日：2006-02-02

申请号：US11165034

申请日：2005-06-24

申请人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

发明人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

IPC分类号： H01L29/94 ,  H01L21/20

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/90 ,  Y10S257/905

摘要： A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

摘要翻译： 半导体器件包括各自包括相应的圆柱形电极的圆柱形电容器。 每个圆柱形电极包括半球形硅晶粒。 从圆柱形电极的上部区域突出的半球形硅晶粒尺寸较大，从圆柱形电极的下部区域突出的半球形硅晶粒尺寸较小，或者圆柱形电极的下部区域没有半球形硅晶粒。