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    Reactive chips and methods for detecting bindings of target substances utilizing the chips
    1.
    发明申请
    Reactive chips and methods for detecting bindings of target substances utilizing the chips 审中-公开
    用于检测利用芯片的目标物质的结合的反应性芯片和方法

    公开(公告)号：US20080287313A1

    公开(公告)日：2008-11-20

    申请号：US12219126

    申请日：2008-07-16

    申请人： Yasuko Yoshida ,  Toshikazu Hirota ,  Yukihisa Takeuchi

    发明人： Yasuko Yoshida ,  Toshikazu Hirota ,  Yukihisa Takeuchi

    IPC分类号： C40B30/04

    CPC分类号： G01N33/54373 ,  B01J2219/00605 ,  B01J2219/00637 ,  B01J2219/00704 ,  G01N33/5438

    摘要： A novel chip capable of reducing a reaction period, applying wide-ranging target substance, preventing a mismatch binding efficiently and enabling a highly accurate detection is provided. Thus, an inventive reactive chip has the capture probe (60) fixed on each of three or more vibration areas (50) arranged on the support (30), the capture probes being able to binding to a target substance, wherein each vibration area has the vibration-generating part (40) having the first electrode (11) and the second electrode (12) between which the piezoelectric/electrostrictive element (20) is sandwiched.

    摘要翻译： 提供了能够减少反应时间，应用广泛目标物质，防止失配结合有效并能够进行高精度检测的新型芯片。 因此，本发明的反应性芯片具有固定在布置在支撑件（30）上的三个或更多个振动区域（50）中的每个上的捕获探针（60），捕获探针能够结合到目标物质，其中每个振动区域 具有第一电极（11）的振动产生部（40）和压电/电致伸缩元件（20）夹在其间的第二电极（12）。

    Reaction cell and operation method thereof
    2.
    发明授权
    Reaction cell and operation method thereof 失效
    反应池及其操作方法

    公开(公告)号：US07341697B2

    公开(公告)日：2008-03-11

    申请号：US10377579

    申请日：2003-02-28

    申请人： Yukihisa Takeuchi ,  Yasuko Yoshida ,  Toshikazu Hirota

    发明人： Yukihisa Takeuchi ,  Yasuko Yoshida ,  Toshikazu Hirota

    IPC分类号： B01L3/00 ,  G01N29/00

    CPC分类号： B01L3/5085 ,  B01F11/0266 ,  B01L2300/0627 ,  B01L2300/0803 ,  B01L2400/0439 ,  G01N11/16 ,  G01N33/54393

    摘要： A reaction cell is provided with a vessel-like cell main body and a circular piezoelectric/electrostrictive oscillator fixed to an outside of a bottom surface of the cell main body. The cell main body includes a circular bottom plate portion and a circumferential wall portion which rises from a circumferential edge of the bottom plate portion so as to thereby surround the bottom plate portion. The bottom plate portion and the circumferential wall portion are integrally formed from ceramics. A solution accommodation space is formed above the bottom plate portion and is partially enclosed by the circumferential wall portion. The piezoelectric/electrostrictive oscillator is concentrically adhered to the outside of the bottom surface of the cell main body.

    摘要翻译： 反应池设置有容器状电池主体和固定在电池主体的底面外侧的圆形压电/电致伸缩振荡器。 电池主体包括圆形底板部分和从底板部分的周缘上升以便包围底板部分的周壁部分。 底板部和周壁部由陶瓷一体形成。 在底板部的上方形成有溶解容纳空间，并被周壁部分封闭。 压电/电致伸缩振荡器同心地粘附到电池主体的底表面的外部。

    REACTION CELL AND OPERATION METHOD THEREOF
    3.
    发明申请
    REACTION CELL AND OPERATION METHOD THEREOF 审中-公开
    反应池及其操作方法

    公开(公告)号：US20080050285A1

    公开(公告)日：2008-02-28

    申请号：US11923007

    申请日：2007-10-24

    申请人： Yukihisa TAKEUCHI ,  Yasuko Yoshida ,  Toshikazu Hirota

    发明人： Yukihisa TAKEUCHI ,  Yasuko Yoshida ,  Toshikazu Hirota

    IPC分类号： B01L3/00

    CPC分类号： B01L3/5085 ,  B01F11/0266 ,  B01L2300/0627 ,  B01L2300/0803 ,  B01L2400/0439 ,  G01N11/16 ,  G01N33/54393

    摘要： A reaction cell is provided with a vessel-like cell main body and a circular piezoelectric/electrostrictive oscillator fixed to an outside of a bottom surface of the cell main body. The cell main body includes a circular bottom plate portion and a circumferential wall portion which rises from a circumferential edge of the bottom plate portion so as to thereby surround the bottom plate portion. The bottom plate portion and the circumferential wall portion are integrally formed from ceramics. A solution accommodation space is formed above the bottom plate portion and is partially enclosed by the circumferential wall portion. The piezoelectric/electrostrictive oscillator is concentrically adhered to the outside of the bottom surface of the cell main body.

    摘要翻译： 反应池设置有容器状电池主体和固定在电池主体的底面外侧的圆形压电/电致伸缩振荡器。 电池主体包括圆形底板部分和从底板部分的周缘上升以便包围底板部分的周壁部分。 底板部和周壁部由陶瓷一体形成。 在底板部的上方形成有溶解容纳空间，并被周壁部分封闭。 压电/电致伸缩振荡器同心地粘附到电池主体的底表面的外部。

    Probe reactive chip, sample analysis apparatus, and method thereof
    5.
    发明授权
    Probe reactive chip, sample analysis apparatus, and method thereof 失效
    探针反应性芯片，样品分析装置及其方法

    公开(公告)号：US07200254B2

    公开(公告)日：2007-04-03

    申请号：US10235999

    申请日：2002-09-05

    申请人： Shigeki Kira ,  Kazunari Yamada ,  Toshikazu Hirota ,  Yasuko Yoshida

    发明人： Shigeki Kira ,  Kazunari Yamada ,  Toshikazu Hirota ,  Yasuko Yoshida

    IPC分类号： G06K9/00 ,  G06K9/32

    CPC分类号： B82Y30/00 ,  B01J19/0046 ,  B01J2219/00529 ,  B01J2219/0054 ,  B01J2219/00576 ,  B01J2219/00677 ,  B01J2219/00689 ,  B01J2219/00693 ,  B01J2219/00695 ,  B01J2219/00702 ,  B01J2219/00722 ,  C40B40/06 ,  G01N2035/00158 ,  G01N2035/0494

    摘要： Technology is disclosed for highly accurate automated execution of processing for alignment of a detection area to a DNA microarray image file and processing for quantitative determination of success/failure of the alignment during DNA microarray analysis. A probe reactive chip used for the technology comprises a substrate; a spot region wherein spots for fixing a probe capable of specifically reacting to a sample marked so as to be optically detectable are formed in a matrix on a surface of the substrate; and a reference pattern area, which is arranged within the spot region or approximate to the spot region, and comprises a plurality of different alignment marks in order to correct misalignment of the spot during analysis of the sample on the surface of the substrate.

    摘要翻译： 公开了用于高精度自动执行用于将检测区域与DNA微阵列图像文件对齐的处理的技术，以及用于在DNA微阵列分析期间定量确定取向成功/失败的处理。 用于该技术的探针反应性芯片包括基底; 斑点区域，其中用于固定探针的斑点能够与标记为可光学检测的样品特异性反应，形成在基底表面上的基质中; 以及布置在斑点区域内或近似于斑点区域的参考图案区域，并且包括多个不同的对准标记，以便在基底表面上的样品分析期间校正斑点的未对准。

    Manufacturing method of semiconductor device
    7.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07666728B2

    公开(公告)日：2010-02-23

    申请号：US12028593

    申请日：2008-02-08

    申请人： Shuji Matsuo ,  Katsuhiro Uchimura ,  Yasuko Yoshida ,  Kota Funayama ,  Yutaka Takeshima

    发明人： Shuji Matsuo ,  Katsuhiro Uchimura ,  Yasuko Yoshida ,  Kota Funayama ,  Yutaka Takeshima

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/302

    CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7842

    摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

    摘要翻译： 半导体器件的制造方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅电极和半导体区域; 进行退火以引起CoSi层与栅极电极和半导体区域之间的反应以形成CoSi 2层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。

    Nucleotide derivative and DNA microarray
    8.
    发明授权
    Nucleotide derivative and DNA microarray 有权
    核苷酸衍生物和DNA微阵列

    公开(公告)号：US07414117B2

    公开(公告)日：2008-08-19

    申请号：US10795436

    申请日：2004-03-09

    申请人： Isao Saito ,  Akimitsu Okamoto ,  Yoshio Saito ,  Yasuko Yoshida ,  Kousuke Niwa

    发明人： Isao Saito ,  Akimitsu Okamoto ,  Yoshio Saito ,  Yasuko Yoshida ,  Kousuke Niwa

    IPC分类号： C07H21/02 ,  C07H19/04 ,  C12Q1/68 ,  G01N33/53 ,  C07H21/00

    CPC分类号： C07H19/04 ,  C07H19/06 ,  C07H19/067 ,  C07H19/16 ,  C07H21/00 ,  C07H21/04 ,  C12Q1/6837 ,  Y10S436/809 ,  C12Q2565/549

    摘要： A novel nucleotide derivative, in case of existing as a member of a single-stranded sequence, undergoing a change in the fluorescent signal intendity depending on the corresponding base type in the partner strand with which the single-stranded sequence is hybridized, and which is a thymin/uracil derivative (1) emitting light most intensely when a confronting base in the partner strand with which the single-stranded nucleotide sequence is hybridized is adenine; a cytosine derivative (2) emitting light most intensely when the confronting base is guanine; an adenine derivative (3) emitting light most intensely when the confronting base is cytosine; a guanine derivative (4) emitting light most intensely when the confronting base is cytosine or thymine/uracil; and an adrnine derivative (5) emitting light most intensely when the confronting base is thymine/uracil/.

    摘要翻译： 在存在单链序列成员的情况下，新的核苷酸衍生物依赖于与单链序列杂交的伴侣链中的相应碱基类型而经历荧光信号意图的变化，并且其是 当与单链核苷酸序列杂交的伴侣链中的相对的碱基是腺嘌呤时，最强烈地发射光的甲氨喋呤/尿嘧啶衍生物（1） 当相对的碱是鸟嘌呤时，胞嘧啶衍生物（2）最强地发射光; 当面对的碱基是胞嘧啶时，腺苷衍生物（3）最强地发光; 当面对的碱基是胞嘧啶或胸腺嘧啶/尿嘧啶时，最强烈地发射光的鸟嘌呤衍生物（4） 和当相对底物是胸腺嘧啶/尿嘧啶时最强烈地发光的腺苷衍生物（5）。

    Manufacturing method of semiconductor device
    9.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07348230B2

    公开(公告)日：2008-03-25

    申请号：US11008276

    申请日：2004-12-10

    申请人： Shuji Matsuo ,  Katsuhiro Uchimura ,  Yasuko Yoshida ,  Kota Funayama ,  Yutaka Takeshima

    发明人： Shuji Matsuo ,  Katsuhiro Uchimura ,  Yasuko Yoshida ,  Kota Funayama ,  Yutaka Takeshima

    IPC分类号： H01L21/336

    CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7842

    摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅极电极和半导体区域; 进行退火以引起CoSi层和栅极电极和半导体区域之间的反应以形成CoSi 2 O 3层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。