摘要:
A novel nucleotide derivative, in case of existing as a member of a single-stranded sequence, undergoing a change in the fluorescent signal intensity depending on the corresponding base type in the partner strand with which the single-stranded sequence is hybridized, and which is a thymine/uracil derivative (1) emitting light most intensely when a confronting base in the partner strand with which the single-stranded nucleotide sequence is hybridized is adenine; a cytosine derivative (2) emitting light most intensely when the confronting base is guanine; an adenine derivative (3) emitting light most intensely when the confronting base is cytosine; a guanine derivative (4) emitting light most intensely when the confronting base is cytosine or thymine/uracil; and an adenine derivative (5) emitting light most intensely when the confronting base is thymine/uracil.
摘要:
A novel nucleotide derivative, in case of existing as a member of a single-stranded sequence, undergoing a change in the fluorescent signal intendity depending on the corresponding base type in the partner strand with which the single-stranded sequence is hybridized, and which is a thymin/uracil derivative (1) emitting light most intensely when a confronting base in the partner strand with which the single-stranded nucleotide sequence is hybridized is adenine; a cytosine derivative (2) emitting light most intensely when the confronting base is guanine; an adenine derivative (3) emitting light most intensely when the confronting base is cytosine; a guanine derivative (4) emitting light most intensely when the confronting base is cytosine or thymine/uracil; and an adrnine derivative (5) emitting light most intensely when the confronting base is thymine/uracil/.
摘要:
A novel nucleotide derivative, in case of existing as a member of a single-stranded sequence, undergoing a change in the fluorescent signal intensity depending on the corresponding base type in the partner strand with which the single-stranded sequence is hybridized, and which is (1) a thymine/uracil derivative emitting light most intensely when a confronting base in the partner strand with which the single-stranded nucleotide sequence is hybridized is adenine; (2) a cytosine derivative emitting light most intensely when the confronting base is guanine; (3) an adenine derivative emitting light most intensely when the confronting base is cytosine; and, (4) a guanine derivative emitting light most intensely when the confronting base is cytosine or thymine/uracil.
摘要:
The present teaching provides a fluorescent oligonucleotide probe having a high degree of design flexibility and wide applicability, as well as the use thereof. This is an oligonucleotide probe capable of forming a stem and loop, comprising at least one fluorophore located between adjacent nucleotides in the stem and is linked to a unit represented by Formula (1) and at least one quencher located at a site capable of pairing up with the at least one fluorophore located between the adjacent nucleotides in the stem and is linked to a unit represented by Formula (2). (In the formulae, X represents the fluorophore, Y represents the quencher, R1 represents an optionally substituted C2 or C3 alkylene chain, R2 represents an optionally substituted C0-2 alkylene chain, and Z represents a direct bond or linker.)
摘要:
The present invention provides a hybridization method suited for using a signal probe. An array of the present invention comprises: a substrate; a nucleic acid probe that is fixed to the substrate and is hybridized with a sample to have a signal change; and at least one cavity that is filled with a specific liquid containing the sample and causing the hybridization of the nucleic acid probe with the sample. The array in this arrangement effectively enhances the reproducibility and the efficiency of hybridization with the signal probe.
摘要:
A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要:
A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.
摘要:
The present invention aims to provide a technique for stably immobilizing a probe on a carrier The present invention provides a linker compound represented by formula (1): wherein A represents a hydrogen atom, another substituent, a sugar, or a derivative thereof.
摘要:
In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode.
摘要:
Manufacturing a semiconductor device avoiding an increase of transistor leak current or reduction of the withstanding voltage characteristics is by at least one of: The pad oxide film is removed along the substrate surface from the upper edge of the groove over a distance ranging from 5 to 40 nm: The exposed surface of the semiconductor substrate undergoes removal by isotropic etching within 20 nm; and oxidizing a groove portion formed in a semiconductor substrate in an oxidation environment with a gas ratio of hydrogen (H2) to oxygen (O2) being less than or equal to 0.5, an increase of the curvature radius beyond 3nm is achieved without associating the risk of creation of any level difference on the substrate surface at or near the upper groove edge portions in a groove separation structure. This eliminates either an increase of transistor leak current or reduction of the withstanding voltage characteristics thereof otherwise occurring due to local electric field concentration near or around the terminate ends of a gate electrode film which in turn leads to an ability to improve electrical reliability of transistors used.