公开(公告)号：US07554192B2

公开(公告)日：2009-06-30

申请号：US11553235

申请日：2006-10-26

Applicant: Masuo Koga ,  Tetsuo Mizoshiri ,  Yukimasa Hayashida

Inventor： Masuo Koga ,  Tetsuo Mizoshiri ,  Yukimasa Hayashida

IPC: H01L23/34

CPC classification number: H01L23/22 ,  H01L23/053 ,  H01L23/24 ,  H01L23/3735 ,  H01L2224/32225

Abstract: A semiconductor device that includes an insulating substrate having an upper conductor formed on an upper surface thereof and a lower conductor formed on a lower surface of the insulating substrate. The device also includes a semiconductor element mounted on the upper surface of the insulating substrate with an under-element solder therebetween. The device further includes a heat sink whereon the insulating substrate is mounted with an under-substrate solder therebetween. The device additionally includes a silicone gel covering the semiconductor element, the under-element solder, and the upper conductor. In addition, the device includes a filler covering the lower conductor and the under-substrate solder, without covering the semiconductor element, the under-element solder, and the upper conductor, and having a thermal conductivity larger than a thermal conductivity of air and a fluidity higher than a fluidity of the silicone gel.

Abstract translation: 一种半导体器件，包括在其上表面上形成有上导体的绝缘基板和形成在所述绝缘基板的下表面上的下导体。 该装置还包括半导体元件，其安装在绝缘基板的上表面上，其间具有下部元件焊料。 该装置还包括散热器，绝缘基板上安装有底板下焊料。 该装置还包括覆盖半导体元件，下部元件焊料和上导体的硅凝胶。 此外，该器件包括覆盖下导体和底基底焊料的填充物，而不覆盖半导体元件，下元件焊料和上导体，并且具有大于空气的热导率的热导率和 流动性高于硅胶的流动性。

公开(公告)号：US07514777B2

公开(公告)日：2009-04-07

申请号：US11566274

申请日：2006-12-04

Applicant: Yasuto Kawaguchi ,  Yukimasa Hayashida

Inventor： Yasuto Kawaguchi ,  Yukimasa Hayashida

IPC: H01L23/34

CPC classification number: H01L23/5385 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/162 ,  H01L25/18 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A power semiconductor module of the present invention comprises: a heat sink 1; a circuit substrate 2 mounted on the heat sink 1; a conductive pattern 10 provided on the circuit substrate 2; a low dielectric constant film 11 covering the conductive pattern 10; a case 7 provided on the heat sink 1 so as to enclose the circuit substrate 2; and a soft insulator 9 filling the space within the case 7. The low dielectric constant film 11 is preferably formed of silicon rubber, polyimide, or epoxy resin.

Abstract translation: 本发明的功率半导体模块包括：散热器1; 安装在散热器1上的电路基板2; 设置在电路基板2上的导电图案10; 覆盖导电图案10的低介电常数膜11; 设置在散热器1上以包围电路基板2的壳体7; 以及填充壳体7内的空间的软绝缘体9.低介电常数膜11优选由硅橡胶，聚酰亚胺或环氧树脂形成。

公开(公告)号：US07405448B2

公开(公告)日：2008-07-29

申请号：US11538232

申请日：2006-10-03

Applicant: Masuo Koga ,  Tetsuo Mizoshiri ,  Yukimasa Hayashida

Inventor： Masuo Koga ,  Tetsuo Mizoshiri ,  Yukimasa Hayashida

IPC: H01L23/62 ,  H01L21/00 ,  H05K7/20

CPC classification number: H01L25/162 ,  H01L23/647 ,  H01L25/165 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A first insulating substrate is formed on a heat sink, and a semiconductor element is formed thereon. An insulating resin casing is formed so as to cover the first insulating substrate and the semiconductor element. A second insulating substrate is mounted inside the insulating resin casing apart from the first insulating substrate. On the second insulating substrate, a resistance element that functions as a gate balance resistance is fixed by soldering. The second insulating substrate on which the resistance element was thus mounted was made apart from the first insulating substrate on which the semiconductor element was mounted, and was mounted on the side of the insulating resin casing.

Abstract translation: 在散热器上形成第一绝缘基板，在其上形成半导体元件。 形成绝缘树脂外壳以覆盖第一绝缘基板和半导体元件。 第二绝缘基板安装在绝缘树脂外壳的内部，与第一绝缘基板隔开。 在第二绝缘基板上，通过焊接固定用作栅极平衡电阻的电阻元件。 将安装有电阻元件的第二绝缘基板与安装有半导体元件的第一绝缘基板分开，并且安装在绝缘树脂外壳的一侧。

公开(公告)号：US09363914B2

公开(公告)日：2016-06-07

申请号：US14396155

申请日：2012-07-13

Applicant: Goro Yasutomi ,  Yukimasa Hayashida

Inventor： Goro Yasutomi ,  Yukimasa Hayashida

IPC: H05K7/00 ,  H05K7/02 ,  H01L23/10 ,  H05K7/14

CPC classification number: H05K7/02 ,  H01L23/10 ,  H01L2924/0002 ,  H05K7/14 ,  H01L2924/00

Abstract: It is an object of the present invention to provide an easily assemblable semiconductor device including a cover that covers a top of a case and is reliably fixed to the case defining an outline of the semiconductor device. A semiconductor device according to the present invention includes: a case defining an outline of the semiconductor device; a cover covering a top of the case; and a fastener mechanically fixing the cover to the case, a through-hole is formed in the cover, the case includes a projection inserted into the through-hole, and the fastener is attachable to the projection inserted into the through-hole of the cover from the outside of the cover and locks the projection upon the attachment to prevent the projection from falling off the through-hole.

Abstract translation: 本发明的目的是提供一种易于组装的半导体器件，其包括覆盖壳体的顶部并可靠地固定到限定半导体器件的轮廓的壳体的盖。 根据本发明的半导体器件包括：限定半导体器件的轮廓的壳体; 覆盖壳体顶部的盖子; 以及将盖机械地固定到壳体上的紧固件，在盖中形成有通孔，壳体包括插入到通孔中的突起，并且紧固件可附接到插入盖的通孔中的突起 从盖的外部并且将突起锁定在附接上以防止突起从通孔脱落。

公开(公告)号：US20150116956A1

公开(公告)日：2015-04-30

申请号：US14396155

申请日：2012-07-13

Applicant: Goro Yasutomi ,  Yukimasa Hayashida

Inventor： Goro Yasutomi ,  Yukimasa Hayashida

IPC: H05K7/02 ,  H05K7/14

CPC classification number: H05K7/02 ,  H01L23/10 ,  H01L2924/0002 ,  H05K7/14 ,  H01L2924/00

Abstract: It is an object of the present invention to provide an easily assemblable semiconductor device including a cover that covers a top of a case and is reliably fixed to the case defining an outline of the semiconductor device. A semiconductor device according to the present invention includes: a case defining an outline of the semiconductor device; a cover covering a top of the case; and a fastener mechanically fixing the cover to the case, a through-hole is formed in the cover, the case includes a projection inserted into the through-hole, and the fastener is attachable to the projection inserted into the through-hole of the cover from the outside of the cover and locks the projection upon the attachment to prevent the projection from falling off the through-hole.

Abstract translation: 本发明的目的是提供一种易于组装的半导体器件，其包括覆盖壳体的顶部并可靠地固定到限定半导体器件的轮廓的壳体的盖。 根据本发明的半导体器件包括：限定半导体器件的轮廓的壳体; 覆盖壳体顶部的盖子; 以及将盖机械地固定到壳体上的紧固件，在盖中形成有通孔，壳体包括插入到通孔中的突起，并且紧固件可附接到插入盖的通孔中的突起 从盖的外部并且将突起锁定在附接上以防止突起从通孔脱落。

公开(公告)号：US08569890B2

公开(公告)日：2013-10-29

申请号：US13531843

申请日：2012-06-25

Applicant: Kazuhiro Morishita ,  Masuo Koga ,  Yukimasa Hayashida

Inventor： Kazuhiro Morishita ,  Masuo Koga ,  Yukimasa Hayashida

IPC: H01L23/48

CPC classification number: H01L23/13 ,  H01L23/24 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/3738 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/26175 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/00013 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2924/00

Abstract: A power semiconductor device module includes: a base plate; an insulating substrate mounted on the base plate; and a diode chip mounted on the insulating substrate, wherein the insulating substrate has an upper surface electrode layer disposed on an upper main surface and a lower surface electrode layer disposed on a lower main surface, the diode chip is joined onto the upper surface electrode layer, the lower surface electrode layer is joined onto the upper main surface of the base plate, and a thermal resistance reducing section that reduces thermal resistance is provided in lower surface electrode layer or the base plate of a portion corresponding to a place immediately below the diode chip.

Abstract translation: 功率半导体器件模块包括：基板; 安装在基板上的绝缘基板; 以及安装在所述绝缘基板上的二极管芯片，其中所述绝缘基板具有设置在上主表面上的上表面电极层和设置在下主表面上的下表面电极层，所述二极管芯片接合到所述上表面电极层 ，下表面电极层被接合到基板的上主表面上，并且在下表面电极层或与二极管正下方的位置相对应的部分的基板上设置降低热阻的热阻降低部分 芯片。

公开(公告)号：US20080006932A1

公开(公告)日：2008-01-10

申请号：US11553235

申请日：2006-10-26

Applicant: Masuo KOGA ,  Tetsuo Mizoshiri ,  Yukimasa Hayashida

Inventor： Masuo KOGA ,  Tetsuo Mizoshiri ,  Yukimasa Hayashida

IPC: H01L23/34

CPC classification number: H01L23/22 ,  H01L23/053 ,  H01L23/24 ,  H01L23/3735 ,  H01L2224/32225

Abstract: A semiconductor device according to the present invention has an insulating substrate having an upper conductor formed on the upper surface and a lower conductor formed on the lower surface; a semiconductor element mounted on the insulating substrate with an under-element solder therebetween; a heat sink whereon the insulating substrate is mounted with an under-substrate solder therebetween; a silicone gel covering the semiconductor element, the under-element solder and the upper conductor; and a filler covering the lower conductor and the under-substrate solder, and having a thermal conductivity larger than the thermal conductivity of air and a fluidity higher than the fluidity of the silicone gel.

Abstract translation: 根据本发明的半导体器件具有绝缘基板，其具有形成在上表面上的上导体和形成在下表面上的下导体; 半导体元件，其安装在绝缘基板上，其间具有下部元件焊料; 绝缘基板上安装有底板下焊料的散热器; 覆盖半导体元件的硅凝胶，下部元件焊料和上导体; 以及覆盖下导体和底基底焊料并且具有大于空气热导率的导热性和高于硅凝胶的流动性的流动性的填充物的填充物。

公开(公告)号：US20070284745A1

公开(公告)日：2007-12-13

申请号：US11538232

申请日：2006-10-03

Applicant: Masuo KOGA ,  Tetsuo Mizoshiri ,  Yukimasa Hayashida

Inventor： Masuo KOGA ,  Tetsuo Mizoshiri ,  Yukimasa Hayashida

IPC: H01L23/48

CPC classification number: H01L25/162 ,  H01L23/647 ,  H01L25/165 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A first insulating substrate is formed on a heat sink, and a semiconductor element is formed thereon. An insulating resin casing is formed so as to cover the first insulating substrate and the semiconductor element. A second insulating substrate is mounted inside the insulating resin casing apart from the first insulating substrate. On the second insulating substrate, a resistance element that functions as a gate balance resistance is fixed by soldering. The second insulating substrate on which the resistance element was thus mounted was made apart from the first insulating substrate on which the semiconductor element was mounted, and was mounted on the side of the insulating resin casing.

Abstract translation: 在散热器上形成第一绝缘基板，在其上形成半导体元件。 形成绝缘树脂外壳以覆盖第一绝缘基板和半导体元件。 第二绝缘基板安装在绝缘树脂外壳的内部，与第一绝缘基板隔开。 在第二绝缘基板上，通过焊接固定用作栅极平衡电阻的电阻元件。 将安装有电阻元件的第二绝缘基板与安装有半导体元件的第一绝缘基板分开，并且安装在绝缘树脂外壳的一侧。

公开(公告)号：US20140291701A1

公开(公告)日：2014-10-02

申请号：US14353990

申请日：2012-03-05

Applicant: Yukimasa Hayashida

Inventor： Yukimasa Hayashida

IPC: H01L49/02 ,  H01L29/16 ,  H01L23/498

CPC classification number: H01L28/22 ,  H01L23/49838 ,  H01L25/16 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/10272 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/0306 ,  H05K1/111 ,  H05K3/3442 ,  H05K2201/09045 ,  H05K2201/09745 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/00

Abstract: An object of the present invention is to provide a semiconductor device that allows the life of solder joint parts of electronic components to be increased. The semiconductor device according to the present invention includes ceramic, an upper pattern formed on the ceramic, and a resistor connected onto the upper pattern via solder. The upper pattern has a portion formed in a recess shape, the portion being connected to the resistor via the solder.

Abstract translation: 本发明的一个目的是提供一种能够增加电子部件的焊接部件的寿命的半导体装置。 根据本发明的半导体器件包括陶瓷，形成在陶瓷上的上部图案，以及通过焊料连接到上部图案上的电阻器。 上部图案具有形成为凹部形状的部分，该部分通过焊料连接到电阻器。

公开(公告)号：US20080105896A1

公开(公告)日：2008-05-08

申请号：US11566274

申请日：2006-12-04

Applicant: Yasuto KAWAGUCHI ,  Yukimasa Hayashida

Inventor： Yasuto KAWAGUCHI ,  Yukimasa Hayashida

IPC: H01L31/111

CPC classification number: H01L23/5385 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/162 ,  H01L25/18 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A power semiconductor module of the present invention comprises: a heat sink 1; a circuit substrate 2 mounted on the heat sink 1; a conductive pattern 10 provided on the circuit substrate 2; a low dielectric constant film 11 covering the conductive pattern 10; a case 7 provided on the heat sink 1 so as to enclose the circuit substrate 2; and a soft insulator 9 filling the space within the case 7. The low dielectric constant film 11 is preferably formed of silicon rubber, polyimide, or epoxy resin.

Abstract translation: 本发明的功率半导体模块包括：散热器1; 安装在散热器1上的电路基板2; 设置在电路基板2上的导电图案10; 覆盖导电图案10的低介电常数膜11; 设置在散热器1上以包围电路基板2的壳体7; 以及填充壳体7内的空间的软绝缘体9.低介电常数膜11优选由硅橡胶，聚酰亚胺或环氧树脂形成。