公开(公告)号：US06635144B2

公开(公告)日：2003-10-21

申请号：US09833437

申请日：2001-04-11

申请人： Zhenjiang Cui ,  Padmanabhan Krishnaraj ,  Shamouil Shamouilian

发明人： Zhenjiang Cui ,  Padmanabhan Krishnaraj ,  Shamouil Shamouilian

IPC分类号： B08B600

CPC分类号： H01L21/67253 ,  B08B7/00 ,  C23C16/4405 ,  H01L21/67069 ,  H01L21/67248

摘要： Apparatus for processing semiconductor wafers includes a processing chamber, a chuck within the chamber for supporting a wafer during processing, a fiberoptic cable having a first end positioned at the surface of the chuck, and an optical pyrometer connected to a second end of the cable. The optical pyrometer measures the temperature of a wafer during processing and measures in situ temperature of plasma-excited cleaning gas introduced into the chamber during subsequent cleaning from walls thereof of unwanted solid deposits within the chamber. The pyrometer is connected to a computer which controls the flow of cleaning gases. When the temperature of the plasma-excited gas reaches a steady-state value the computer stops the flow of cleaning gases into the chamber and thereby stops the cleaning operation.

公开(公告)号：US06863019B2

公开(公告)日：2005-03-08

申请号：US10159794

申请日：2002-05-30

申请人： Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

发明人： Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

IPC分类号： B08B7/00 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01J37/32 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： B08B7/0035 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45593 ,  H01J37/3244 ,  H01J37/32844 ,  H01J2237/335 ,  Y02C20/30

摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

摘要翻译： 清洁半导体制造处理室的方法包括清洁气体组分的再循环。 因此，有效地利用输入清洁气体，并且减少不期望的排放。 该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。 该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

公开(公告)号：US06869880B2

公开(公告)日：2005-03-22

申请号：US10057014

申请日：2002-01-24

申请人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

发明人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C30B25/10 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L21/20

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/509 ,  C30B25/105 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76837

摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

摘要翻译： 提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。 可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。 沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

公开(公告)号：US07399707B2

公开(公告)日：2008-07-15

申请号：US11036632

申请日：2005-01-13

申请人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

发明人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

IPC分类号： H01L21/302

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/509 ,  C30B25/105 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76837

摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

摘要翻译： 提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。 可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。 沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

公开(公告)号：US20050124166A1

公开(公告)日：2005-06-09

申请号：US11036632

申请日：2005-01-13

申请人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Cox ,  Shamouil Shamouilian

发明人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Cox ,  Shamouil Shamouilian

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C30B25/10 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/509 ,  C30B25/105 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76837

摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

公开(公告)号：US06721162B2

公开(公告)日：2004-04-13

申请号：US10095914

申请日：2002-03-12

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H02N1300

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

摘要翻译： 静电吸盘具有能够带电的电极，以静电保持基板。 复合层覆盖电极。 复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成 材料。 卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

公开(公告)号：US06689252B1

公开(公告)日：2004-02-10

申请号：US09363250

申请日：1999-07-28

申请人： Shamouil Shamouilian ,  Tony S. Kaushal

发明人： Shamouil Shamouilian ,  Tony S. Kaushal

IPC分类号： B01J1908

CPC分类号： B01D53/8659 ,  B01D53/68 ,  B01D53/70 ,  B01D53/74 ,  B01D53/8662 ,  B01D2257/2066 ,  B01J19/08 ,  B01J19/12 ,  B01J19/129 ,  Y02C20/30

摘要： An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent plasma reactor 210 and a downstream catalytic reactor 220. The reactor 210 may include a consumable liner that reacts with the energized effluent to remove the hazardous gases. The catalytic reactor 220 may also include catalytic surfaces 227 in a honeycomb, foam, or pellet structure 225 to catalyze reactions that further reduce hazardous gas content.

摘要翻译： 用于减少从处理室25排出的有害气体的装置和方法包括流出物等离子体反应器210和下游催化反应器220.反应器210可包括消耗性衬里，其与通电的流出物反应以除去有害气体。 催化反应器220还可以包括在蜂窝状，泡沫状或颗粒结构225中的催化表面227，以催化进一步减少有害气体含量的反应。

公开(公告)号：US06503368B1

公开(公告)日：2003-01-07

申请号：US09607533

申请日：2000-06-29

申请人： Arnold Kholodenko ,  Vijay Parkhe ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser

发明人： Arnold Kholodenko ,  Vijay Parkhe ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser

IPC分类号： C23C1600

CPC分类号： H01L21/67103 ,  C23C16/4581 ,  C23C16/4586 ,  H01J2237/2001

摘要： A substrate support 55 comprises first, second and third sections 88, 90, 92 connected to one another by first and second bonds 106, 108, one of the sections comprises a surface 75 adapted to receive a substrate 25. The first bond 106 comprises a first bonding material and the second bond 108 comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.

摘要翻译： 衬底支撑件55包括通过第一和第二键106,108彼此连接的第一，第二和第三部分88,90,92，其中一个部分包括适于接收衬底25的表面75.第一结合106包括 第一接合材料和第二接合108包括第二接合材料。 在一个版本中，第一接合材料能够在被加热到第一温度时粘合表面，并且第二接合材料能够在被加热到第二温度时粘合表面。

公开(公告)号：US06391146B1

公开(公告)日：2002-05-21

申请号：US09547423

申请日：2000-04-11

申请人： Ashish Bhatnagar ,  Kartik Ramaswamy ,  Tony S. Kaushal ,  Kwok Manus Wong ,  Shamouil Shamouilian

发明人： Ashish Bhatnagar ,  Kartik Ramaswamy ,  Tony S. Kaushal ,  Kwok Manus Wong ,  Shamouil Shamouilian

IPC分类号： H05H100

CPC分类号： C23C16/4412 ,  B01D53/34 ,  B01D53/70

摘要： An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent gas treatment system 200 with a gas energizing reactor 210 with an erosion resistant inner surface 280. Optionally, an additive gas source 230 may be provided to introduce additive gas into the gas energizing reactor 210. In one embodiment, the inner surface comprises a fluorine-containing compound. In another embodiment, the inner surface comprises an oxide and a stabilizing agent.

摘要翻译： 用于减少从处理室25排出的有害气体的装置和方法包括具有带有耐腐蚀内表面280的气体激励反应器210的废气处理系统200.任选地，可以提供添加气体源230以将添加气体引入 气体通电反应器210.在一个实施方案中，内表面包含含氟化合物。 在另一个实施方案中，内表面包含氧化物和稳定剂。

公开(公告)号：US06310755B1

公开(公告)日：2001-10-30

申请号：US09307215

申请日：1999-05-07

申请人： Arnold Kholodenko ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Ananda H. Kumar

发明人： Arnold Kholodenko ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Ananda H. Kumar

IPC分类号： H01G2300

CPC分类号： C04B35/565 ,  C04B35/185 ,  C04B35/806 ,  C04B37/006 ,  C04B37/026 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2235/402 ,  C04B2235/5248 ,  C04B2235/616 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/121 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/405 ,  C04B2237/60 ,  C22C29/00 ,  C22C2204/00 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  C04B38/00 ,  C04B41/4523

摘要： An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.

摘要翻译： 静电吸盘55具有静电构件100，静电构件100包括具有适于接纳衬底30的表面120的电介质115.电介质115覆盖电极105，电极105可充电以静电保持衬底30.静电构件100下方的支撑件190具有 空腔300适于保持气体以用作热绝缘体，以调节从静电卡盘55到腔室25的表面120的热量流动。空腔300具有截面轮廓，其形状设置成提供预定的 跨越衬底30的温度分布。