公开(公告)号：US20230076060A1

公开(公告)日：2023-03-09

申请号：US17986113

申请日：2022-11-14

Applicant: ASM IP Holdings B.V.

Inventor： MELVIN VERBAAS ,  Christianus G.M. de Ridder

IPC: F27D3/00 ,  H01L21/67 ,  H01L21/677

Abstract: A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

公开(公告)号：US10720331B2

公开(公告)日：2020-07-21

申请号：US16245006

申请日：2019-01-10

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  C23C16/455 ,  H01L29/49 ,  H01L21/8238 ,  C23C16/34 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US10714350B2

公开(公告)日：2020-07-14

申请号：US15795056

申请日：2017-10-26

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L27/108

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US10714315B2

公开(公告)日：2020-07-14

申请号：US13651144

申请日：2012-10-12

Applicant: ASM IP Holding B.V.

Inventor： Carl White ,  Todd Dunn ,  Eric Shero ,  Kyle Fondurulia

IPC: H01J37/32 ,  C23C16/455

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

公开(公告)号：US10692741B2

公开(公告)日：2020-06-23

申请号：US15672119

申请日：2017-08-08

Applicant: ASM IP Holding B.V.

Inventor： Melvin Verbaas

IPC: H01L21/67 ,  C23C16/48 ,  H01L21/687 ,  C23C16/458 ,  H01J37/32

Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

公开(公告)号：US10607895B2

公开(公告)日：2020-03-31

申请号：US15707786

申请日：2017-09-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Chiyu Zhu ,  Kiran Shrestha ,  Pauline Calka ,  Oreste Madia ,  Jan Willem Maes ,  Michael Eugene Givens

IPC: H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L27/092

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US10590535B2

公开(公告)日：2020-03-17

申请号：US15660797

申请日：2017-07-26

Applicant: ASM IP Holding B.V.

Inventor： Robert Huggare

IPC: C23C16/455 ,  H01L21/687 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677 ,  C23C16/44

Abstract: The disclosure relates to a chemical deposition, treatment and/or infiltration apparatus for providing a chemical reaction on and/or in a surface of a substrate. The apparatus may have a top and a bottom reaction chamber part forming together a closable reaction chamber and an actuator constructed and arranged for moving the top and bottom reaction chamber parts with respect to each other from a closed position to an open position so as to allow access to an interior of the reaction chamber. A top substrate holder is connected to the top reaction chamber part to hold a substrate at least when the reaction chamber is in the open position and a bottom substrate holder is connected to the bottom reaction chamber part to hold the substrate when the reaction chamber is in the closed position.

公开(公告)号：US10529542B2

公开(公告)日：2020-01-07

申请号：US14645234

申请日：2015-03-11

Applicant: ASM IP Holding B.V.

Inventor： Carl Louis White ,  Eric James Shero ,  Mohith Verghese

IPC: H01J37/32 ,  C23C16/455 ,  B08B7/00 ,  C23C16/458

Abstract: Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.

公开(公告)号：US09349620B2

公开(公告)日：2016-05-24

申请号：US14327134

申请日：2014-07-09

Applicant: ASM IP Holding B.V.

Inventor： Keisuke Kamata ,  Hiroyuki Sato ,  Kazunori Furukawahara ,  Masaei Suwada ,  Kenkichi Okubo ,  Izumi Arai

IPC: F26B11/00 ,  H01L21/67 ,  H01L21/677 ,  F27B9/12

CPC classification number: H01L21/67109 ,  F27B17/0025 ,  F27B2009/124 ,  H01L21/67775 ,  H01L21/67778

Abstract: A pre-baking apparatus for heating a substrate upstream of a process tool is adapted to be connected to an EFEM (equipment front end module) and includes: a chamber which has a front face with multiple slots arranged in a height direction of the chamber, and which is divided into multiple compartments extending from the multiple slots, respectively, toward a rear end of the chamber for loading and unloading substrates; and a connecting frame for connecting the chamber to the process tool. The multiple compartments are separated from each other by a divider plate and provided with heaters for heating the multiple compartments, and each compartment has a gas injection port for blowing a hot inert gas over the substrate placed therein toward the slot.

Abstract translation: 用于加热处理工具上游的基板的预烘烤装置适于连接到EFEM（设备前端模块），并且包括：具有在室的高度方向上布置有多个槽的前表面的室， 并且其分成多个隔室，分别从多个槽延伸到用于装载和卸载基板的室的后端; 以及用于将腔室连接到加工工具的连接框架。 多个隔室通过分隔板彼此分离，并设置有用于加热多个隔室的加热器，并且每个隔间具有气体注入口，用于将热惰性气体吹向放置在其中的基板上。

公开(公告)号：US09120114B2

公开(公告)日：2015-09-01

申请号：US13948245

申请日：2013-07-23

Applicant: ASM IP Holding B.V.

Inventor： Sang-Jin Jeong

IPC: B05C13/00 ,  C23C16/458 ,  H01L21/687

CPC classification number: B05C13/00 ,  C23C16/4583 ,  H01L21/68742

Abstract: A deposition apparatus includes a substrate supporting pin that is fixed to a supporting plate through an autoalignment control unit to prevent the substrate supporting pin from being broken when loading or unloading a substrate, thereby preventing damaging the substrate and also preventing decreased yield that may result due to the breakage of the substrate supporting pin.

Abstract translation: 沉积装置包括：衬底支撑销，其通过自动对准控制单元固定到支撑板，以防止衬底支撑销在装载或卸载衬底时被破坏，从而防止损坏衬底并且还防止可能导致的产量降低 到基板支撑销的破损。