公开(公告)号：US20240087953A1

公开(公告)日：2024-03-14

申请号：US18518081

申请日：2023-11-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Hung Lin ,  Sheng-Hsuan Lin ,  Chih-Wei Chang ,  You-Hua Chou

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76858 ,  H01L21/28518 ,  H01L21/76846 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76871 ,  H01L21/76883 ,  H01L21/76889 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2221/1073 ,  H01L2924/0002

摘要： A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.

公开(公告)号：US09728498B2

公开(公告)日：2017-08-08

申请号：US14754705

申请日：2015-06-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： An-Jhih Su ,  Hsien-Wei Chen

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/49894 ,  H01L21/76841 ,  H01L21/7685 ,  H01L21/76852 ,  H01L23/3157 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5329 ,  H01L24/19 ,  H01L24/20 ,  H01L25/105 ,  H01L2221/1073 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a package structure including a die, an encapsulant, a through via, a first dielectric layer, a conductive line structure, an adhesion promotion layer, a second dielectric layer and a connector. The encapsulant is formed aside the die. The through via is formed aside the die and penetrates through the encapsulant. The first dielectric layer is formed overlying the die, the encapsulant and the through via. The conductive line structure includes a pad over the first dielectric layer. The adhesion promotion layer overlays a first portion of a top surface and a sidewall of the pad and overlying the first dielectric layer. The second dielectric layer overlays the adhesion promotion layer. The connector is in contact with a second portion of the top surface of the pad. The second portion of the top surface of the pad is exposed by the adhesion promotion layer.

公开(公告)号：US20180254212A1

公开(公告)日：2018-09-06

申请号：US15970596

申请日：2018-05-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Bo-Jiun Lin ,  Hai-Ching Chen ,  Tien-I Bao

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/7685 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1295 ,  C23C18/14 ,  C23C30/00 ,  C25D3/38 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1015 ,  H01L2221/1021 ,  H01L2221/1073 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming an interconnect structure includes forming an insulating layer on a substrate. A damascene opening is formed through a thickness portion of the insulating layer. A diffusion barrier layer is formed to line the damascene opening. A conductive layer is formed overlying the diffusion barrier layer to fill the damascene opening. A carbon-containing metal oxide layer is formed on the conductive layer and the insulating layer.

公开(公告)号：US20170005034A1

公开(公告)日：2017-01-05

申请号：US14754705

申请日：2015-06-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： An-Jhih Su ,  Hsien-Wei Chen

IPC分类号： H01L23/498 ,  H01L23/31

CPC分类号： H01L23/49894 ,  H01L21/76841 ,  H01L21/7685 ,  H01L21/76852 ,  H01L23/3157 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5329 ,  H01L24/19 ,  H01L24/20 ,  H01L25/105 ,  H01L2221/1073 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a package structure including a die, an encapsulant, a through via, a first dielectric layer, a conductive line structure, an adhesion promotion layer, a second dielectric layer and a connector. The encapsulant is formed aside the die. The through via is formed aside the die and penetrates through the encapsulant. The first dielectric layer is formed overlying the die, the encapsulant and the through via. The conductive line structure includes a pad over the first dielectric layer. The adhesion promotion layer overlays a first portion of a top surface and a sidewall of the pad and overlying the first dielectric layer. The second dielectric layer overlays the adhesion promotion layer. The connector is in contact with a second portion of the top surface of the pad. The second portion of the top surface of the pad is exposed by the adhesion promotion layer.

摘要翻译： 提供了包括管芯，密封剂，通孔，第一介电层，导电线结构，粘合促进层，第二介电层和连接器的封装结构。 密封剂形成在模具的旁边。 通孔形成在模具外面并穿过密封剂。 第一介电层形成在芯片上，密封剂和通孔上。 导线结构包括在第一电介质层上的焊盘。 粘附促进层覆盖焊盘的顶表面和侧壁的第一部分并且覆盖在第一介电层上。 第二电介质层覆盖粘附促进层。 连接器与垫的顶表面的第二部分接触。 垫的上表面的第二部分被粘附促进层暴露出来。

公开(公告)号：US11854874B2

公开(公告)日：2023-12-26

申请号：US17086754

申请日：2020-11-02

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Hung Lin ,  Sheng-Hsuan Lin ,  Chih-Wei Chang ,  You-Hua Chou

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L23/485 ,  H01L23/522

CPC分类号： H01L21/76858 ,  H01L21/28518 ,  H01L21/76846 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76871 ,  H01L21/76883 ,  H01L21/76889 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2221/1073 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.

公开(公告)号：US20140252619A1

公开(公告)日：2014-09-11

申请号：US13790850

申请日：2013-03-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Bo-Jiun Lin ,  Hai-Ching Chen ,  Tien-I Bao

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/7685 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1295 ,  C23C18/14 ,  C23C30/00 ,  C25D3/38 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/2885 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1015 ,  H01L2221/1021 ,  H01L2221/1073 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming an interconnect structure includes forming an insulating layer on a substrate. A damascene opening is formed through a thickness portion of the insulating layer. A diffusion barrier layer is formed to line the damascene opening. A conductive layer is formed overlying the diffusion barrier layer to fill the damascene opening. A carbon-containing metal oxide layer is formed on the conductive layer and the insulating layer.

摘要翻译： 形成互连结构的方法包括在基板上形成绝缘层。 通过绝缘层的厚度部分形成镶嵌开口。 形成扩散阻挡层以对镶嵌开口进行排列。 形成覆盖扩散阻挡层的导电层以填充镶嵌开口。 在导电层和绝缘层上形成含碳金属氧化物层。