公开(公告)号：US20230090881A1

公开(公告)日：2023-03-23

申请号：US17932341

申请日：2022-09-15

申请人： Tokyo Electron Limited

发明人： Masato ARAKI ,  Tadahiro ISHIZAKA ,  Kohichi SATOH

IPC分类号： C23C16/16 ,  C23C16/56

摘要： A film-forming method of embedding ruthenium in a substrate having a recess includes: (a) providing the substrate in a processing container; (b) supplying a gas containing a ruthenium raw material gas into the processing container to form a ruthenium layer; (c) annealing the ruthenium layer; and (d) supplying a gas containing an ozone gas into the processing container to etch the ruthenium layer, wherein (b), (c), and (d) are repeatedly executed in this order.

公开(公告)号：US11384429B2

公开(公告)日：2022-07-12

申请号：US15598687

申请日：2017-05-18

申请人： Applied Materials, Inc.

发明人： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

IPC分类号： C23C16/16 ,  H01L21/324 ,  H01L21/768 ,  C23C16/02 ,  C23C16/18 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455 ,  C23C16/50

摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US20220037476A1

公开(公告)日：2022-02-03

申请号：US17383394

申请日：2021-07-22

申请人： Beihai HKC Optoelectronics Technology Co., Ltd. ,  HKC CORPORATION LIMITED

发明人： En-Tsung CHO ,  Yuming XIA ,  Wei LI

IPC分类号： H01L29/40 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  C23C14/14 ,  C23C14/58 ,  C23C16/56 ,  C23C16/455 ,  C23C28/02 ,  C23C14/35 ,  C23C16/16 ,  C23C16/14

摘要： The present application discloses a manufacturing method for a gate electrode and a thin film transistor, and a display panel, including: depositing an aluminum film on a substratum by physical vapor deposition; depositing a molybdenum film over the aluminum film by atomic layer deposition; and etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern.

公开(公告)号：US20210140036A1

公开(公告)日：2021-05-13

申请号：US17151895

申请日：2021-01-19

申请人： Gelest Technologies, Inc.

发明人： Barry C. ARKLES ,  Alain E. KALOYEROS

IPC分类号： C23C16/24 ,  H01L21/285 ,  C23C16/455 ,  C23C16/16 ,  C23C16/448 ,  C23C16/452 ,  C30B25/02 ,  C30B29/06 ,  C30B29/02 ,  C30B23/02

摘要： A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

公开(公告)号：US10995405B2

公开(公告)日：2021-05-04

申请号：US15999499

申请日：2017-02-17

申请人： Merck Patent GmbH

发明人： Charles Dezelah ,  Jean-Sebastien Lehn ,  Guo Liu ,  Mark C. Potyen

IPC分类号： C23C16/455 ,  C23C16/16

摘要： Transition metal precursors are disclosed herein along with methods of using these precursors to deposit metal thin films. Advantageous properties of these precursors and methods are also disclosed, as well as superior films that can be achieved with the precursors and methods.

公开(公告)号：US10732501B2

公开(公告)日：2020-08-04

申请号：US16452632

申请日：2019-06-26

申请人： Carl Zeiss SMT GmbH

发明人： Jens Oster ,  Kinga Kornilov ,  Tristan Bret ,  Horst Schneider ,  Thorsten Hofmann

IPC分类号： G03F1/72 ,  G03F1/74 ,  H01J37/30 ,  H01J37/317 ,  C23C14/04 ,  C23C14/08 ,  C23C14/10 ,  C23C14/22 ,  C23C14/54 ,  C23C14/58 ,  C23C14/28 ,  C23C14/30 ,  C23C16/16 ,  C23C16/18 ,  C23C16/04 ,  C23C16/40 ,  C23C16/56 ,  C23C16/48 ,  G03F1/26

摘要： The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

公开(公告)号：US10526697B2

公开(公告)日：2020-01-07

申请号：US15556102

申请日：2016-02-28

申请人： ENTEGRIS, INC.

发明人： Thomas H. Baum ,  Robert L. Wright, Jr. ,  Scott L. Battle ,  John M. Cleary

IPC分类号： C01G41/00 ,  C23C16/16

摘要： A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100° C. to produce the solid source material as a sintered solid.

公开(公告)号：US10372032B2

公开(公告)日：2019-08-06

申请号：US15441678

申请日：2017-02-24

申请人： Carl Zeiss SMT GmbH

发明人： Jens Oster ,  Kinga Kornilov ,  Tristan Bret ,  Horst Schneider ,  Thorsten Hofmann

IPC分类号： G03F1/72 ,  G03F1/74 ,  G03F1/26 ,  H01J37/30 ,  C23C14/04 ,  C23C14/08 ,  C23C14/10 ,  C23C14/54 ,  C23C14/28 ,  C23C14/30 ,  C23C16/04 ,  C23C16/16 ,  C23C16/18 ,  C23C16/40 ,  C23C16/48 ,  C23C14/22 ,  C23C14/58 ,  C23C16/56

摘要： The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

公开(公告)号：US10128150B2

公开(公告)日：2018-11-13

申请号：US15083590

申请日：2016-03-29

申请人： Applied Materials, Inc.

发明人： Pramit Manna ,  Rui Cheng ,  Kelvin Chan ,  Abhijit Basu Mallick

IPC分类号： C23C16/00 ,  H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/16 ,  C23C16/34 ,  C23C16/46

摘要： Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definitions. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber, flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate.

公开(公告)号：US20180135180A1

公开(公告)日：2018-05-17

申请号：US15871683

申请日：2018-01-15

申请人： APPLIED MATERIALS, INC.

发明人： MAYUR TRIVEDI

IPC分类号： C23C16/46 ,  C23C16/56 ,  C23C16/18 ,  C23C16/16 ,  C23C16/04

CPC分类号： C23C16/46 ,  C23C16/045 ,  C23C16/16 ,  C23C16/18 ,  C23C16/56

摘要： Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body having a processing volume; a rotatable substrate support disposed within the chamber body, wherein the substrate support is configured to rotate one or more substrates arranged in a planar array between a first processing position and a second processing position, wherein the first processing position and the second processing position are independently thermally controlled; a showerhead disposed opposite the rotatable substrate support configured to expose the one or more substrates at the first processing position to a cobalt containing precursor; and a heat source disposed within the substrate support configured to heat the one or more substrates at the second processing position.