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    FARBRICATION METHOD
    1.
    发明公开
    FARBRICATION METHOD 审中-公开

    公开(公告)号：US20240107897A1

    公开(公告)日：2024-03-28

    申请号：US17753581

    申请日：2019-09-10

    申请人： Microsoft Technology Licensing, LLC

    发明人： Pavel ASEEV ,  Philippe CAROFF-GAONAC'H ,  Leonardus Petrus KOUWENHOVEN

    IPC分类号： H10N60/01 ,  C30B25/04 ,  C30B29/40 ,  C30B29/60 ,  H10N69/00

    CPC分类号： H10N60/01 ,  C30B25/04 ,  C30B29/40 ,  C30B29/60 ,  H10N69/00

    摘要： A fabrication method comprising: forming a mask of an amorphous material over a crystalline surface of a substrate, the mask having a pattern of openings defining areas of an active region in which one or more components of one or more active devices are to be formed, the mask further defining a non-active region in which no active devices are to be formed; and forming a deposition material through the mask by an epitaxial growth process. The deposition material thus forms in the openings of the active region. The pattern of openings through the mask further comprises one or more reservoirs formed in the non-active region, each of the reservoirs being connected by the pattern of openings in the mask to at least one of the areas in the active region, and the deposition material forming in the reservoirs as part of the epitaxial growth.

    Crystal fiber manufacturing method
    5.
    发明授权
    Crystal fiber manufacturing method 有权

    公开(公告)号：US11447888B2

    公开(公告)日：2022-09-20

    申请号：US17057479

    申请日：2019-03-15

    申请人： Nippon Telegraph and Telephone Corporation

    发明人： Shigeo Ishibashi

    IPC分类号： C30B13/30 ,  C30B13/22 ,  C30B29/28 ,  C30B29/60 ,  H01S3/067 ,  H01S3/16

    摘要： Provided is a method for producing a crystal fiber which can suppress the occurrence of stress birefringence even while distributing a light emission center so as to concentrate on a cross-sectional middle portion. The method for producing a crystal fiber comprises the steps of: using, as a preform, the crystal fiber comprising a light emission center that volatilizes from a melted portion upon the melting of a crystal, and heating a portion or a plurality of portions of the side of the preform, whereby the portion or the plurality of portions of the preform are melted such that only a given amount of the inside of the portion or the plurality of portions of the preform is not melted, to form the melted portion; and sequentially transferring the melted portion in the longitudinal direction of the preform, and cooling the melted portion, whereby the melted portion is continuously recrystallized to form a recrystallized region.

    Compositions and aggregates comprising boron nitride nanotube structures, and methods of making
    8.
    发明授权
    Compositions and aggregates comprising boron nitride nanotube structures, and methods of making 有权

    公开(公告)号：US11332369B2

    公开(公告)日：2022-05-17

    申请号：US15928969

    申请日：2018-03-22

    申请人： BNNano, Inc.

    发明人： Jason Edward Taylor ,  Mark Edmond ,  Steven Michael Wilcenski

    IPC分类号： C30B25/14 ,  C01B21/064 ,  C30B25/16 ,  C30B29/40 ,  C30B29/60 ,  B82Y40/00 ,  B82Y30/00

    摘要： A composition (or an aggregate) comprising an epitaxial h-BN/BNNT structure that comprises a hexagonal boron nitride structure that is epitaxial with respect to a boron nitride nanotube structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a composition (or an aggregate) in which not more than 1% of independent boron nitride nanotubes and boron nitride nanotube structures have a dixie cup or bamboo defect. Also, a composition in which at least 50% of independent boron nitride nanotubes and boron nitride nanotube structures are single-wall. Also, a method of making a composition that comprises epitaxial h-BN/BNNT structures.

    SILICON AND SILICA NANOSTRUCTURES AND METHOD OF MAKING SILICON AND SILICA NANOSTRUCTURES
    10.
    发明申请
    SILICON AND SILICA NANOSTRUCTURES AND METHOD OF MAKING SILICON AND SILICA NANOSTRUCTURES 有权

    公开(公告)号：US20220098094A1

    公开(公告)日：2022-03-31

    申请号：US17545493

    申请日：2021-12-08

    申请人： CORNING INCORPORATED ,  ICFO

    发明人： Albert Carrilero ,  Prantik Mazumder ,  Valerio Pruneri

    IPC分类号： C03C15/00 ,  C30B29/60 ,  C30B29/06 ,  C30B29/18 ,  C30B11/12 ,  C01B33/12

    摘要： Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.