公开(公告)号：US12057516B2

公开(公告)日：2024-08-06

申请号：US17730392

申请日：2022-04-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Fu-Hai Li ,  Yi Ching Ong ,  Kuo-Ching Huang

IPC分类号： H01L31/07 ,  H01L31/053 ,  H01L31/18

CPC分类号： H01L31/07 ,  H01L31/053 ,  H01L31/18

摘要： A semiconductor structure may include semiconductor devices located on a substrate, metal interconnect structures that are located within dielectric material layers overlying the semiconductor devices and are electrically connected to the semiconductor devices, and an energy harvesting device located over the metal interconnect structures and comprising a Schottky barrier diode, a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode.

公开(公告)号：US11658178B2

公开(公告)日：2023-05-23

申请号：US17242131

申请日：2021-04-27

申请人： SCHOTTKY LSI, INC.

发明人： Augustine Wei-Chun Chang

IPC分类号： H01L27/06 ,  H01L27/02 ,  H01L27/07 ,  H01L27/105 ,  H01L27/108 ,  H01L27/112 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/118 ,  H01L31/032 ,  H01L31/0376 ,  H01L31/072 ,  H01L31/074 ,  H03K19/17728 ,  H01L25/065 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/872 ,  H01L31/07 ,  H01L49/02

CPC分类号： H01L27/0629 ,  H01L21/8238 ,  H01L25/065 ,  H01L27/0207 ,  H01L27/0727 ,  H01L27/105 ,  H01L27/10897 ,  H01L27/112 ,  H01L27/11253 ,  H01L27/11286 ,  H01L27/11293 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11807 ,  H01L29/66143 ,  H01L29/872 ,  H01L31/032 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/07 ,  H01L31/072 ,  H01L31/074 ,  H03K19/17728 ,  H01L28/20 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

公开(公告)号：US11588066B2

公开(公告)日：2023-02-21

申请号：US17288689

申请日：2019-11-05

申请人： The Board of Trustees of the Leland Stanford Junior University

发明人： Koosha Nassiri Nazif ,  Raisul Islam ,  Jin-Hong Park ,  Krishna C. Saraswat

IPC分类号： H01L31/0725 ,  H01L31/032 ,  H01L31/055 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0687 ,  H01L31/07 ,  H01L31/072

摘要： Tandem solar cell configurations are provided where at least one of the cells is a metal chalcogenide cell. A four-terminal tandem solar cell configuration has two electrically independent solar cells stacked on each other. A two-terminal solar cell configuration has two electrically coupled solar cells (same current through both cells) stacked on each other. Carrier selective contacts can be used to make contact to the metal chalcogenide cell (s) to alleviate the troublesome Fermi level pinning issue. Carrier-selective contacts can also remove the need to provide doping of the metal chalcogenide. Doping of the metal chalcogenide can be provided by charge transfer. These two ideas can be practiced independently or together in any combination.

公开(公告)号：US10809588B2

公开(公告)日：2020-10-20

申请号：US15659150

申请日：2017-07-25

申请人： Hongbin Yu ,  Sandwip Dey ,  Xiao Di Sun Zhou ,  Ebraheem Azhar

发明人： Hongbin Yu ,  Sandwip Dey ,  Xiao Di Sun Zhou ,  Ebraheem Azhar

IPC分类号： H01L31/054 ,  G02F1/163 ,  H02S20/26 ,  G02F1/133 ,  G02F1/153 ,  H01L31/0224 ,  H01L31/07 ,  H01L31/073 ,  H01L31/18 ,  G02F1/1524

摘要： Optically transmissive UV solar cells may be coupled to glass substrates, for example windows, in order to generate electricity while still providing suitable optical behavior for the window. The UV solar cells may be utilized to power electrochromic components coupled to the window to adjust or vary the transmissivity of the window. The UV solar cells may utilize a Schottky ZnO/ZnS heterojunction.

公开(公告)号：US10686091B2

公开(公告)日：2020-06-16

申请号：US16077261

申请日：2017-02-10

申请人： LG INNOTEK CO., LTD.

发明人： Jung Hun Oh ,  Hyung Jo Park

IPC分类号： H01L31/07 ,  H01L31/10 ,  H01L33/06 ,  H01L33/10 ,  H01L33/38 ,  H01L33/46 ,  H01L31/075 ,  H01L31/105 ,  H01L27/15 ,  H01L33/44 ,  H01L31/101

摘要： A semiconductor device of an embodiment includes first and second semiconductor layers having different conductivity types; a third semiconductor layer interposed between the first and second semiconductor layers; and a fourth semiconductor layer interposed between the second and third semiconductor layers, having a lower doping concentration than that of the first semiconductor layer and the same conductivity type as the first semiconductor layer, wherein the difference in doping concentration between the first semiconductor layer and the fourth semiconductor layer may be greater than 4×E18 atoms/cm3.

公开(公告)号：US10373950B2

公开(公告)日：2019-08-06

申请号：US15799921

申请日：2017-10-31

申请人： SCHOTTKY LSI, INC.

发明人： Augustine Wei-Chun Chang

IPC分类号： H01L29/872 ,  H01L27/06 ,  H01L27/02 ,  H01L27/07 ,  H01L27/105 ,  H01L27/108 ,  H01L27/112 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/118 ,  H01L31/032 ,  H01L31/0376 ,  H01L31/072 ,  H01L31/074 ,  H03K19/177 ,  H01L25/065 ,  H01L21/8238 ,  H01L29/66 ,  H01L31/07 ,  H01L49/02

摘要： A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

公开(公告)号：US20190173031A1

公开(公告)日：2019-06-06

申请号：US16153858

申请日：2018-10-08

申请人： InVisage Technologies Inc.

发明人： Edward Hartley Sargent ,  Ghada Koleilat ,  Larissa Levina

IPC分类号： H01L51/42 ,  H01L51/44 ,  H01L31/07 ,  B82Y30/00 ,  H01L31/032 ,  B82Y20/00 ,  H01L31/0384 ,  H01L31/0352

摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

公开(公告)号：US10297709B2

公开(公告)日：2019-05-21

申请号：US15156940

申请日：2016-05-17

申请人： International Business Machines Corporation ,  Egypt Nanotechnology Center

发明人： Keith E. Fogel ,  Jeehwan Kim ,  Devendra K. Sadana ,  George S. Tulevski ,  Ahmed Abou-Kandil ,  Hisham S. Mohamed ,  Mohamed Saad ,  Osama Tobail

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/075 ,  H01L31/0232 ,  H01L31/07 ,  H01L31/056 ,  H01L31/028 ,  H01L31/20 ,  H01L31/0256

摘要： A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.

公开(公告)号：US20180248142A1

公开(公告)日：2018-08-30

申请号：US15754733

申请日：2016-08-15

申请人： King Abdullah University of Science and Technology

发明人： Osman M. BAKR ,  Wei PENG ,  Lingfei WANG

IPC分类号： H01L51/42 ,  C23C14/06 ,  H01L31/0392 ,  H01L31/07 ,  H01L51/00

CPC分类号： H01L51/4206 ,  C23C14/06 ,  H01L31/0392 ,  H01L31/07 ,  H01L51/0002 ,  H01L51/0094 ,  H01L2251/308 ,  Y02E10/549

摘要： Embodiments of the present disclosure provide for solar cells including an organometallic halide perovskite monocrystalline film (see FIG. 1.1B), other devices including the organometallic halide perovskite monocrystalline film, methods of making organometallic halide perovskite monocrystalline film, and the like.

公开(公告)号：US10032949B2

公开(公告)日：2018-07-24

申请号：US14936131

申请日：2015-11-09

申请人： International Business Machines Corporation

发明人： Talia S. Gershon ,  Supratik Guha ,  Oki Gunawan ,  Richard A. Haight ,  Yun Seog Lee

IPC分类号： H01L31/18 ,  H01L31/072 ,  H01L31/032 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/07

摘要： Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.