公开(公告)号：WO2012173927A1

公开(公告)日：2012-12-20

申请号：PCT/US2012/041887

申请日：2012-06-11

Applicant: CREE, INC. ,  DONOFRIO, Matthew ,  EDMOND, John Adam ,  KONG, Hua-Shuang

Inventor： DONOFRIO, Matthew ,  EDMOND, John Adam ,  KONG, Hua-Shuang

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/20 ,  H01L33/505 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2924/10155 ,  H01L2924/00014

Abstract: Light emitting device fabricated by providing a mounting substrate and an array of light emitting diode dies adjacent the mounting substrate to define gaps. Gel is diluted in a solvent applied on the substrate and the array of light emitting dies. Some of the solvent is evaporated so that the gel remains in the gaps, but does not completely cover the light emitting diode dies. Light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent.

Abstract translation: 通过提供安装基板和与安装基板相邻的发光二极管管芯阵列来制造的发光器件以限定间隙。 将凝胶在施加在基板上的溶剂中和发光管芯阵列上稀释。 一些溶剂被蒸发，使得凝胶保留在间隙中，但不完全覆盖发光二极管管芯。 发光二极管在安装基板上和安装基板上和/或发光二极管管芯上的保形凝胶层管芯。 保形凝胶层可以至少部分地填充发光二极管管芯和安装衬底之间的间隙。 可以在保形凝胶层上提供荧光体层和/或模制圆顶。 可以通过喷雾和/或分配在溶剂中稀释的凝胶来制造保形凝胶层。

公开(公告)号：WO2010126592A1

公开(公告)日：2010-11-04

申请号：PCT/US2010/001255

申请日：2010-04-27

Applicant: CREE, INC. ,  EMERSON, David ,  KELLER, Bernd ,  HUSSELL, Christopher ,  SALTER, Amber ,  COLLINS, Brian ,  BERGMANN, Michael ,  EDMOND, John ,  TARSA, Eric ,  ANDREWS, Peter

Inventor： EMERSON, David ,  KELLER, Bernd ,  HUSSELL, Christopher ,  SALTER, Amber ,  COLLINS, Brian ,  BERGMANN, Michael ,  EDMOND, John ,  TARSA, Eric ,  ANDREWS, Peter

IPC: H01L33/58 ,  H01L33/64 ,  H01L33/20

CPC classification number: H01L33/58 ,  H01L33/20 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2924/01019 ,  H01L2924/01087 ,  H01L2924/00014

Abstract: A light emitting diode (LED) package (30) having increased feature sizes for improved luminous flux and efficacy. A LED chip (34) is disposed on a submount (32) with a lens (70) that covers the LED chip. In some cases, the ratio of the width of the light LED chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to • emit light more efficiently. Some packages, include submounts having dimensions greater than 3.5 mm per 3.5 mm used in conjunction with larger LED chips. Materials having high thermal conductivities are used to fabricate the submounts, such as APN, providing the package with better thermal management.

Abstract translation: 一种发光二极管（LED）封装（30），其具有增加的特征尺寸以改善光通量和功效。 LED芯片（34）设置在具有覆盖LED芯片的透镜（70）的底座（32）上。 在一些情况下，光LED芯片的宽度与所述透镜在给定方向上的宽度的比率为0.5或更大。 增加的特征尺寸可使包装更有效地发光。 一些包装，包括尺寸大于3.5 mm / 3.5 mm的底座，与较大的LED芯片结合使用。 使用具有高导热性的材料来制造诸如APN的底座，为封装提供更好的热管理。

公开(公告)号：WO2010077590A2

公开(公告)日：2010-07-08

申请号：PCT/US2009/066938

申请日：2009-12-07

Applicant: CREE, INC. ,  DONOFRIO, Matthew ,  EDMOND, John ,  IBBETSON, James ,  TING, Li

Inventor： DONOFRIO, Matthew ,  EDMOND, John ,  IBBETSON, James ,  TING, Li

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/42 ,  H01L33/46

Abstract: A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.

Abstract translation: 公开了一种发光二极管，其包括有源结构，有源结构上的第一欧姆接触和与第一欧姆接触相对的有源结构上的透明导电氧化物层。 透明导电氧化物层具有比所述活性结构更大的占地面积。 电介质反射镜位于与所述有源结构相对的透明导电氧化物层上，并且第二触点位于与电介质反射镜相对的透明导电氧化物层上并与有源结构分离。

公开(公告)号：WO2009026030A1

公开(公告)日：2009-02-26

申请号：PCT/US2008/072855

申请日：2008-08-12

Applicant: CREE, INC. ,  DONOFRIO, Matthew ,  SLATER, David, B. ,  EDMOND, John, A. ,  KONG, Hua-shuang

Inventor： DONOFRIO, Matthew ,  SLATER, David, B. ,  EDMOND, John, A. ,  KONG, Hua-shuang

IPC: H01L33/00 ,  H01L23/492

CPC classification number: H01L33/0079 ,  H01L21/2007 ,  H01L23/4827 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05669 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29155 ,  H01L2224/32503 ,  H01L2224/83193 ,  H01L2224/83444 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/12041 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A light emitting diode structure (37) is disclosed that includes a light emitting active portion formed of epitaxial layers (21, 22) and carrier substrate (23) supporting the active portion. A bonding metal system (27) that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer (25, 26) is between the active portion and the carrier substrate and a platinum barrier layer (35, 40) is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.

Abstract translation: 公开了一种发光二极管结构（37），其包括由外延层（21,22）和支撑有源部分的载体基板（23）形成的发光有源部分。 在镍和锡中占优势的接合金属系统（27）将活性部分连接到载体衬底。 至少一个钛粘附层（25,26）在有源部分和载体衬底之间，并且铂阻挡层（35,40）在镍 - 锡接合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。

公开(公告)号：WO2008130541A3

公开(公告)日：2008-12-18

申请号：PCT/US2008004849

申请日：2008-04-15

Applicant: CREE INC ,  LOH BAN P ,  CANNON NATHANIEL O ,  HILLER NORBERT ,  EDMOND JOHN ,  JACKSON MITCH ,  MENDENDORP JR NICHOLAS W

Inventor： LOH BAN P ,  CANNON NATHANIEL O ,  HILLER NORBERT ,  EDMOND JOHN ,  JACKSON MITCH ,  MENDENDORP NICHOLAS W

IPC: H01L33/48 ,  H01L33/54 ,  H01L33/62

CPC classification number: H01L33/52 ,  H01L24/97 ,  H01L25/167 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2224/4554

Abstract: A submount for a light emitting device package includes a rectangular substrate. A first bond pad and a second bond pad are on a first surface of the substrate. The first bond pad includes a die attach region offset toward a first end of the substrate and configured to receive a light emitting diode thereon. The second bond pad includes a bonding region between the first bond pad and the second end of the substrate and a second bond pad extension that extends from the bonding region along a side of the substrate toward a corner of the substrate at the first end of the substrate. First and second solder pads are a the second surface of the substrate. The first solder pad is adjacent the first end of the substrate and contacts the second bond pad. The second solder pad is adjacent the second end of the substrate and contacts the first bond pad. Related LED packages and methods of forming LED packages are disclosed.

Abstract translation: 用于发光器件封装的基座包括矩形基板。 第一接合焊盘和第二接合焊盘位于衬底的第一表面上。 第一接合焊盘包括朝向衬底的第一端偏移并且被配置为在其上接收发光二极管的管芯附着区域。 第二接合焊盘包括在第一接合焊盘和基板的第二端之间的接合区域以及第二接合焊盘延伸部，其在接合区域沿着基板的侧面朝向基板的角部在第一端部处延伸 基质。 第一和第二焊盘是基板的第二表面。 第一焊盘与衬底的第一端相邻并接触第二焊盘。 第二焊盘邻近衬底的第二端并接触第一接合焊盘。 公开了相关的LED封装和形成LED封装的方法。

公开(公告)号：WO2008112064A2

公开(公告)日：2008-09-18

申请号：PCT/US2008/002140

申请日：2008-02-19

Applicant: CREE, INC. ,  EMERSON, David Todd ,  HABERERN, Kevin ,  BERGMANN, Michael John ,  SLATER, David ,  DONOFRIO, Matthew ,  EDMOND, John

Inventor： EMERSON, David Todd ,  HABERERN, Kevin ,  BERGMANN, Michael John ,  SLATER, David ,  DONOFRIO, Matthew ,  EDMOND, John

IPC: H01L33/00

CPC classification number: H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

Abstract translation: 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。

公开(公告)号：WO2005106497A3

公开(公告)日：2005-11-10

申请号：PCT/US2005/014493

申请日：2005-04-27

Applicant: CREE, INC. ,  SLATER, David, Beardsley, Jr. ,  EDMOND, John, Adam

Inventor： SLATER, David, Beardsley, Jr. ,  EDMOND, John, Adam

IPC: H01L33/00

Abstract: An LED chip includes a bond pad suitable for thermosonic or thermocompression bonding such as Sn, AuSn or other metals. The physical dimensions of the bond pad are selected to discourage or prevent solder squeeze-out during thermocompression or thermosonic bonding with or without flux. In some embodiments, an AuSn bond pas is designed to accept 30g to 70g of force or more without squeeze-out.

公开(公告)号：WO2005106497A2

公开(公告)日：2005-11-10

申请号：PCT/US2005014493

申请日：2005-04-27

Applicant: CREE INC ,  SLATER DAVID BEARDSLEY JR ,  EDMOND JOHN ADAM

Inventor： SLATER DAVID BEARDSLEY JR ,  EDMOND JOHN ADAM

IPC: G01N33/68 ,  H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/40 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An LED chip includes a bond pad suitable for thermosonic or thermocompression bonding such as Sn, AuSn or other metals. The physical dimensions of the bond pad are selected to discourage or prevent solder squeeze-out during thermocompression or thermosonic bonding with or without flux. In some embodiments, an AuSn bond pas is designed to accept 30g to 70g of force or more without squeeze-out.

Abstract translation: LED芯片包括适合于热或热压接的接合焊盘，例如Sn，AuSn或其它金属。 选择焊盘的物理尺寸以阻止或防止在具有或不具有焊剂的热压或热超声粘合期间焊料挤出。 在一些实施方案中，AuSn键pas被设计成在不挤出的情况下接受30g至70g的力或更多的力。

公开(公告)号：WO02063699A3

公开(公告)日：2002-09-26

申请号：PCT/US0200716

申请日：2002-01-12

Applicant: CREE INC ,  EDMOND JOHN ADAM ,  DOVERSPIKE KATHLEEN MARIE ,  KONG HUA-SHUANG ,  BERGMANN MICHAEL JOHN

Inventor： EDMOND JOHN ADAM ,  DOVERSPIKE KATHLEEN MARIE ,  KONG HUA-SHUANG ,  BERGMANN MICHAEL JOHN

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/32341

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer (13) positioned between a first n-type Group III nitride cladding layer (11) and a second n-type Group III nitride cladding layer (12), the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer (18), which is positioned in the semiconductor structure such that the second n-type cladding layer (12) is between the p-type layer (18) and the active layer (13).

Abstract translation: 本发明是用于发射电磁频谱的红到紫外部分的发光器件的半导体结构。 该半导体结构包括位于第一n型III族氮化物覆层（11）和第二n型III族氮化物覆层（12）之间的III族氮化物有源层（13），第一和第二III族氮化物覆层 第二n型包覆层大于有源层的带隙。 所述半导体结构还包括位于所述半导体结构中的p型III族氮化物层（18），使得所述第二n型包覆层（12）位于所述p型层（18）与所述有源层 （13）。

公开(公告)号：WO0237579A3

公开(公告)日：2002-07-18

申请号：PCT/US0145636

申请日：2001-11-02

Applicant: CREE INC ,  EDMOND JOHN ADAM ,  DOVERSPIKE KATHLEEN MARIE ,  KONG HUA-SHUANG ,  BERGMANN MICHAEL JOHN

Inventor： EDMOND JOHN ADAM ,  DOVERSPIKE KATHLEEN MARIE ,  KONG HUA-SHUANG ,  BERGMANN MICHAEL JOHN

IPC: H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343

CPC classification number: H01L33/32 ,  H01L33/007

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

Abstract translation: 本发明是用于发射电磁频谱的红到紫外部分的发光器件的半导体结构。 该半导体结构包括：第III族氮化物的第一包覆层，第III族氮化物的第二包覆层和位于第一和第二包覆层之间的III族氮化物的有源层，并且其带隙小于 第一和第二包层的相应带隙。 半导体结构的特征在于在一个或多个这些结构层中不存在镓。