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公开(公告)号：CN103378051A
公开(公告)日：2013-10-30
申请号：CN201310144407.7
申请日：2013-04-24
申请人： 纳普拉有限公司
IPC分类号： H01L23/498 , H01L31/0224 , H01L33/62 , H05K1/09
CPC分类号： H01L23/48 , H01B1/22 , H01L21/4867 , H01L21/563 , H01L23/498 , H01L23/49838 , H01L23/49866 , H01L23/49883 , H01L23/49894 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L25/0657 , H01L25/16 , H01L31/022425 , H01L31/0682 , H01L33/62 , H01L2224/0332 , H01L2224/0341 , H01L2224/03848 , H01L2224/0401 , H01L2224/05023 , H01L2224/05205 , H01L2224/05209 , H01L2224/05211 , H01L2224/05213 , H01L2224/05318 , H01L2224/05324 , H01L2224/05338 , H01L2224/05339 , H01L2224/05344 , H01L2224/05347 , H01L2224/05355 , H01L2224/0536 , H01L2224/05366 , H01L2224/05369 , H01L2224/05562 , H01L2224/0569 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/17181 , H01L2224/32225 , H01L2224/33181 , H01L2224/73204 , H01L2224/81191 , H01L2224/81192 , H01L2224/81375 , H01L2224/81395 , H01L2224/81505 , H01L2224/81509 , H01L2224/81511 , H01L2224/81513 , H01L2224/81618 , H01L2224/81624 , H01L2224/81638 , H01L2224/81639 , H01L2224/81644 , H01L2224/81647 , H01L2224/81655 , H01L2224/8166 , H01L2224/81666 , H01L2224/81669 , H01L2224/831 , H01L2225/06513 , H01L2225/06517 , H01L2225/06548 , H01L2225/06572 , H01L2924/00014 , H01L2924/01327 , H01L2924/12041 , H01L2924/15747 , H01L2933/0016 , H01L2933/0066 , Y02E10/547 , H01L2924/01014 , H01L2924/00 , H01L2224/05552
摘要： 一种电子设备，包括基板和电子部件。上述基板具有金属化布线。上述金属化布线包括金属化层和合成树脂膜。上述金属化层包含高熔点金属成分和低熔点金属成分，上述高熔点金属成分和上述低熔点金属成分相互扩散接合，附着于上述基板的表面。上述合成树脂膜与上述金属化层同时形成，覆盖上述金属化层的表面，膜厚在5nm～1000nm的范围。上述电子部件与上述金属化层电连接。
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公开(公告)号：CN102456647B
公开(公告)日：2014-12-03
申请号：CN201110092051.8
申请日：2011-04-12
申请人： 台湾积体电路制造股份有限公司
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0341 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05559 , H01L2224/05564 , H01L2224/05647 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/13006 , H01L2224/13007 , H01L2224/13017 , H01L2224/13023 , H01L2224/13147 , H01L2224/16 , H01L2224/48 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/01028 , H01L2924/01044 , H01L2924/01025 , H01L2924/01022 , H01L2924/01032 , H01L2924/00 , H01L2224/05552
摘要： 本发明涉及半导体器件的凸块结构。半导体器件的示例性结构包括衬底；在衬底上延伸的、在接触焊盘上具有开口的钝化层；和在钝化层的开口上方的导电柱，其中，导电柱包括与衬底基本垂直的上部和具有锥形侧壁的下部。
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公开(公告)号：CN102456647A
公开(公告)日：2012-05-16
申请号：CN201110092051.8
申请日：2011-04-12
申请人： 台湾积体电路制造股份有限公司
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0341 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05559 , H01L2224/05564 , H01L2224/05647 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/13006 , H01L2224/13007 , H01L2224/13017 , H01L2224/13023 , H01L2224/13147 , H01L2224/16 , H01L2224/48 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/01028 , H01L2924/01044 , H01L2924/01025 , H01L2924/01022 , H01L2924/01032 , H01L2924/00 , H01L2224/05552
摘要： 本发明涉及半导体器件的凸块结构。半导体器件的示例性结构包括衬底；在衬底上延伸的、在接触焊盘上具有开口的钝化层；和在钝化层的开口上方的导电柱，其中，导电柱包括与衬底基本垂直的上部和具有锥形侧壁的下部。
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