VERFAHREN ZUM HERSTELLEN VON GLAS-SILIZIUM-GLAS SANDWICHSTRUKTUREN
    112.
    发明公开
    VERFAHREN ZUM HERSTELLEN VON GLAS-SILIZIUM-GLAS SANDWICHSTRUKTUREN 审中-公开
    法生产玻璃硅玻璃夹层结构

    公开(公告)号:EP1332106A2

    公开(公告)日:2003-08-06

    申请号:EP01993578.2

    申请日:2001-11-07

    Inventor: HOWITZ, Steffen

    CPC classification number: B81B1/00 B81C1/00357 B81C2201/019

    Abstract: The invention relates to a method for producing glass-silicon-glass sandwich structures which are connected irreversibly and in such a way that they are adjusted to correspond. Said structures consist of a bottom and a top glass substrate (2, 3) and a silicon substrate (1) in-between. At least one of the substrates (1; 2; 3) is provided with 3D depth structuring. The aim of the invention is to provide a low-cost production method, especially with a view to mass production of glass-silicon-glass sandwich structures. To this end, the silicon substrate (1) is irreversibly connected to one of the glass substrates (2; 3) before or after the 3D depth structuring. The bond is reduced to a predetermined end thickness from the glass and/or the silicon side by means of grinding, etching and polishing methods and the remaining silicon surface is then connected to a second glass substrate (3; 2) by anodic bonding.

    Process for manufacture of micro electromechanical devices having high electrical isolation
    113.
    发明公开
    Process for manufacture of micro electromechanical devices having high electrical isolation 有权
    一种用于生产微机电组件高绝缘处理

    公开(公告)号:EP0955668A3

    公开(公告)日:2003-05-07

    申请号:EP99109110.9

    申请日:1999-05-07

    Abstract: The present invention relates to a fabrication process for manufacture of micro electromechanical (MEM) devices such as cantilever support beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate (102) as the carrier substrate and single crystal silicon (108) as the MEM component material. The process further includes deposition of an optional layer of insulating material (110) such as silicon dioxide on top of a layer of doped silicon (108) grown on a silicon substrate. The silicon dioxide (110) is epoxy bonded to the glass substrate (102) to create a silicon-silicon dioxide-epoxy-glass structure (200). The silicon is patterned using anisotropic plasma dry etching techniques. A second patterning then follows to pattern the silicon dioxide layer (110) and an oxygen plasma etch is performed to undercut the epoxy film (120) and to release the silicon MEM component. This two-mask process provides single crystal silicon MEMs with electrically isolated MEM component. Retaining silicon dioxide insulating material (110) in selected areas mechanically supports the MEM component.

    HERSTELLUNGSVERFAHREN FÜR MIKROMECHANISCHE VORRICHTUNG
    115.
    发明公开
    HERSTELLUNGSVERFAHREN FÜR MIKROMECHANISCHE VORRICHTUNG 有权
    PROCESS微型机械装置

    公开(公告)号:EP0976005A1

    公开(公告)日:2000-02-02

    申请号:EP98961043.1

    申请日:1998-10-26

    Abstract: The invention relates to a method for producing a micromechanical device, especially a micromechanical oscillating mirror device, comprising the following steps: a triple-layer structure (10, 20, 30) made up of a first (10), second (20) and third (30) layer is provided, the second layer being located between the first and third layers (10, 30); the first layer (10) is etched through to the second layer (20) in order to produce an island area (40) on said second layer (20), said island area (40) being connected to the area of the first layer (10) surrounding it by means of one or more connecting links (50); an area (70, 80) of the third layer (30) is etched through to the second layer (20) and an area (75, 85) of the second layer (20) underneath the island area (40) is removed so that the island area (40) can move, and preferably torsionally oscillate around the one or more connecting links, (50), said torsional oscillations being of such an amplitude that part of the island area (40) protrudes into the etched-through area (70, 80) of the third layer (30).

    Formation of microstructures using a preformed photoresist sheet
    118.
    发明公开
    Formation of microstructures using a preformed photoresist sheet 失效
    一种用于生产使用预先形成的光致抗蚀剂层的微结构的过程。

    公开(公告)号:EP0607680A2

    公开(公告)日:1994-07-27

    申请号:EP93310107.3

    申请日:1993-12-15

    Abstract: In the formation of microstructures, a preformed sheet of photoresist, such as polymethylmethacrylate (PMMA), which is strain free, may be milled down before or after adherence to a substrate to a desired thickness. The photoresist is patterned by exposure through a mask to radiation, such as X-rays, and developed using a developer to remove the photoresist material which has been rendered susceptible to the developer. Micrometal structures may be formed by electroplating metal into the areas from which the photoresist has been removed. The photoresist itself may form useful microstructures, and can be removed from the substrate by utilizing a release layer between the substrate and the preformed sheet which can be removed by a remover which does not affect the photoresist. Multiple layers of patterned photoresist can be built up to allow complex three dimensional microstructures to be formed.

    Abstract translation: 在形成微结构的,光致抗蚀剂的预成型片,:诸如聚甲基丙烯酸甲酯(PMMA),其全部是无应变,可能之前或附着到基材的厚度期望之后被研磨下来。 光致抗蚀剂通过暴露通过掩模辐射,:诸如X射线图案化,并且使用显影剂以去除已经呈现易受显影剂中的光致抗蚀剂材料显影。 微量金属结构可以通过电镀金属成从光致抗蚀剂已被除去的区域形成。 光致抗蚀剂本身可形成有用的微结构,并且可以从基片通过利用基板和预成型片材可以由去除不影响光致抗蚀剂被去除之间的释放层被除去。 图案的光刻胶的多层可建立以允许形成复杂的三维微结构。

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