Abstract:
A device with multiple encapsulated functional layers, includes a substrate, a first functional layer positioned above a top surface of the substrate, the functional layer including a first device portion, a first encapsulating layer encapsulating the first functional layer, a second functional layer positioned above the first encapsulating layer, the second functional layer including a second device portion, and a second encapsulating layer encapsulating the second functional layer.
Abstract:
Procédé d'encapsulation d'un dispositif microélectronique (102.1, 102.2), comportant les étapes de : - réalisation du dispositif microélectronique sur un premier substrat (104) ; - réalisation d'une portion (118.1, 118.2) d'un premier matériau non perméable à l'atmosphère ambiante et perméable à un gaz noble dans un deuxième substrat (108) à base d'un deuxième matériau non perméable à l'atmosphère ambiante et au gaz noble ; - solidarisation du deuxième substrat au premier substrat, formant au moins une cavité (120.1, 120.2) dans laquelle est encapsulé le dispositif microélectronique telle que ladite portion du premier matériau forme une partie d'une paroi de la cavité ; - injection du gaz noble dans la cavité à travers la portion du premier matériau ; - fermeture hermétique de la cavité vis-à-vis de l'atmosphère ambiante et du gaz noble; le ou les gaz de l'atmosphère ambiante étant différents du gaz noble.
Abstract:
A sensor comprises a substrate 16 and a sensor element 20 anchored to the substrate 16, the substrate 16 and sensor element 20 being of dissimilar materials and having different coefficients of thermal expansion, the sensor element 20 and substrate 16 each having a generally planar face arranged substantially parallel to one another, the sensor further comprising a spacer 26, the spacer 26 being located so as to space at least part of the sensor element 20 from at least part of the substrate 16, wherein the spacer 26 is of considerably smaller area than the area of the smaller of face of the substrate 16 and that of the sensor element 20.
Abstract:
A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.
Abstract:
This document discusses, among other things, a cap wafer and a via wafer configured to encapsulate a single proof-mass 3-axis gyroscope formed in an x-y plane of a device layer. The single proof-mass 3-axis gyroscope can include a main proof-mass section suspended about a single, central anchor, the main proof-mass section including a radial portion extending outward towards an edge of the 3-axis gyroscope sensor, a central suspension system configured to suspend the 3-axis gyroscope from the single, central anchor, and a drive electrode including a moving portion and a stationary portion, the moving portion coupled to the radial portion, wherein the drive electrode and the central suspension system are configured to oscillate the 3-axis gyroscope about a z-axis normal to the x-y plane at a drive frequency.
Abstract:
An integrated sensor device is provided. The integrated sensor device comprises a first substrate (210) including a surface portion and a second substrate (240) coupled to the surface portion of the first substrate in a stacked configuration, wherein a cavity (230) is defined between the first substrate and the second substrate. The integrated sensor device also comprises one or more micro-electro-mechanical systems (MEMS) (220) sensors located at least partially in the first substrate, wherein the MEMS sensor communicates with the cavity. The integrated sensor device further comprises one or more additional sensors (250).
Abstract:
A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.