公开(公告)号：EP1203208A1

公开(公告)日：2002-05-08

申请号：EP00953738.2

申请日：2000-07-28

Applicant: Xactix, Inc.

Inventor： LEBOUITZ, Kyle

IPC: G01J5/40

CPC classification number: G01J5/40 ,  B81B3/0081 ,  B81B2201/0278 ,  B81B2201/032 ,  B81B2203/0118 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/06

Abstract: This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

公开(公告)号：EP0684462A3

公开(公告)日：1997-05-07

申请号：EP95106968.1

申请日：1995-05-08

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Hierold, Christofer, Dr.

IPC: G01K7/02 ,  H01L49/00 ,  H01L27/16

CPC classification number: H01L27/16 ,  B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0315 ,  B81C1/00246 ,  B81C1/0069 ,  B81C2201/053 ,  B81C2203/0136 ,  B81C2203/0735 ,  G01F1/6845 ,  G01F1/6888 ,  G01K7/015 ,  G01P15/0802

Abstract: Halbleiterbauelement mit monolithisch integrierten elektronischen Schaltungen und monolithisch integriertem Sensor/Aktuator, bei dem der Sensor/Aktuator mit Methoden des Surface-Micromachining hergestellt ist in einer z. B. mit Sensorstegen (6) strukturierten Sensorschicht (3) aus Polysilizium und diese Sensorstege (6) von einem Siliziumsubstrat (1) durch einen in einer Opferschicht (2) hergestellten und mit einer Verschlußschicht (5) nach außen gasdicht verschlossenen Hohlraum (4) thermisch isoliert sind.

Abstract translation: 具有单片集成电子电路和单片集成传感器/辅助器的半导体部件，由此传感器/致动器由例如由传感器网（6）构成的多晶硅传感器层（3）中的表面微加工的方法制造，以及 这些传感器网（6）通过在牺牲层（2）中产生的空腔（4）与硅衬底（1）热绝缘，并且通过封闭层（5）朝向外部气密地封闭。

公开(公告)号：EP3228583A4

公开(公告)日：2018-07-25

申请号：EP15866031

申请日：2015-08-20

Applicant: CSMC TECHNOLOGIES FAB1 CO LTD

Inventor： JING ERRONG

IPC: B81B7/02 ,  B81C1/00 ,  G01J5/02 ,  G01J5/08

CPC classification number: B81B7/02 ,  B81B2201/0278 ,  B81B2203/0118 ,  B81C1/00 ,  B81C1/0015 ,  B81C2201/0197 ,  G01J1/04 ,  G01J1/42 ,  G01J5/024 ,  G01J5/0853

Abstract: A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body (310) on a substrate (100), and a cantilever beam (320) connected to the substrate (100) and the first film body (310); forming a sacrificial layer (400) on the first film body (310) and the cantilever beam (320); patterning the sacrificial layer (400) located on the first film body (310) to manufacture a recessed portion (410) used for forming a support structure (520), the bottom of the recessed portion (410) being exposed of the first film body (310); depositing a dielectric layer (500) on the sacrificial layer (400); patterning the dielectric layer (500) to manufacture a second film body (510) and the support structure (520), the support structure (520) being connected to the first film body (310) and the second film body (510); and removing the sacrificial layer (400) to obtain the MEMS double-layer suspension microstructure.

公开(公告)号：EP3140245B1

公开(公告)日：2018-04-18

申请号：EP15719195.8

申请日：2015-04-23

Applicant: TDK Corporation

Inventor： PAHL, Wolfgang

IPC: B81B7/02

CPC classification number: B81B7/02 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/092 ,  B81B2207/096 ,  B81B2207/097 ,  H01L24/20 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/15192 ,  H01L2924/00

公开(公告)号：EP3140246A1

公开(公告)日：2017-03-15

申请号：EP15788858.7

申请日：2015-05-08

Applicant: InvenSense, Inc.

Inventor： TSAI, Julius Ming-Lin ,  CAGDASER, Baris ,  LIM, Martin ,  KHENKIN, Aleksey S.

IPC: B81C1/00 ,  B81B7/02 ,  G01L23/08

CPC classification number: B81B7/02 ,  B81B2201/0214 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/16152 ,  H04R1/04 ,  H04R19/04 ,  H04R29/004 ,  H04R2201/003 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An integrated package of at least one environmental sensor and at least one MEMS acoustic sensor is disclosed. The package contains a shared port that exposes both sensors to the environment, wherein the environmental sensor measures characteristics of the environment and the acoustic sensor measures sound waves. The port exposes the environmental sensor to an air flow and the acoustic sensor to sound waves. An example of the acoustic sensor is a microphone and an example of the environmental sensor is a humidity sensor.

Abstract translation: 至少一个环境传感器和至少一个MEMS声学传感器的集成封装游离缺失盘。 所述包中包含的共享端口没有公开这两个传感器的环境，worin环境和声学传感器测量声波的环境传感器测量特性。 的端口暴露传感器对环境空气流和声音传感器声波。 声音传感器的一个例子是一个麦克风和所述环境传感器的一个例子是一个湿度传感器。

公开(公告)号：EP2331454A1

公开(公告)日：2011-06-15

申请号：EP09747424.1

申请日：2009-05-13

Applicant: Integrated Sensing Systems, Inc.

Inventor： SPARKS, Douglas, Ray

IPC: B81C1/00 ,  H01L23/12 ,  H01L21/02

CPC classification number: B81C1/00119 ,  B01L3/502707 ,  B81B2201/0214 ,  B81B2201/0278 ,  B81B2201/058 ,  G01F1/8445 ,  H01L24/94 ,  H01L2224/48091 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/16152 ,  H01L2924/3025 ,  Y10T137/2191 ,  Y10T137/2224 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A process for fabricating multiple microfluidic device chips. The process includes fabricating multiple micromachined tubes in a semiconductor device wafer. The tubes are fabricated so that each tube has an internal fluidic passage and an inlet and outlet thereto defined in a surface of the device wafer. The device wafer is then bonded to a glass wafer to form a device wafer stack, and so that through-holes in the glass wafer are individually fluidically coupled with the inlets and outlets of the tubes. The glass wafer is then bonded to a metallic wafer to form a package wafer stack, so that through-holes in the metallic wafer are individually fluidically coupled with the through-holes of the glass wafer. Multiple microfluidic device chips are then singulated from the package wafer stack. Each device chip has a continuous flow path for a fluid therethrough that is preferably free of organic materials.

公开(公告)号：EP2172754A1

公开(公告)日：2010-04-07

申请号：EP08017465.9

申请日：2008-10-06

Applicant: Sensirion AG

Inventor： Streiff, Matthias ,  Sunier, Robert ,  Mayer, Felix

IPC: G01J5/02 ,  G01J5/04 ,  G01J5/12 ,  B81B7/00

CPC classification number: G01J5/02 ,  B81B7/0067 ,  B81B2201/0207 ,  B81B2201/0278 ,  G01J5/04 ,  G01J5/045

Abstract: An infrared sensor comprises a temperature sensor (4) at a top side of a substrate (1) and an infrared filter element (19) located at a bottom side of the substrate (1). A lead frame is placed above the substrate (1) and a housing is cast having a window (42) extending to the filter element (19). A recess (27) in the lead frame (25) provides a large distance between the temperature sensor (4) and the metal of the lead frame (25), thereby reducing thermal conductance. This type of device is easy to manufacture.

Abstract translation: 红外线传感器包括位于基板（1）的顶侧的温度传感器（4）和位于基板（1）的底侧的红外线过滤元件（19）。 引线框架放置在基板（1）上方，并且铸造具有延伸到过滤元件（19）的窗口（42）的壳体。 引线框架（25）中的凹部（27）在温度传感器（4）和引线框架（25）的金属之间提供了很大的距离，从而降低了热导率。 这种类型的设备易于制造。

公开(公告)号：EP2093184A2

公开(公告)日：2009-08-26

申请号：EP09152338.1

申请日：2009-02-07

Applicant: Honeywell International Inc.

Inventor： Ridley, Jeff A. ,  Higashi, Robert ,  Detry, James F.

IPC: B81B7/00

CPC classification number: B81B7/0087 ,  B81B2201/0242 ,  B81B2201/0278

Abstract: A MEMS device includes a P-N device formed on a silicon pin, which is connected to a silicon sub-assembly, and where the P-N device is formed on a silicon substrate that is used to make the silicon pin before it is embedded into a first glass wafer. In one embodiment, forming the P-N device includes selectively diffusing an impurity into the silicon pin and configuring the P-N device to operate as a temperature sensor.

Abstract translation: MEMS器件包括形成在硅引脚上的PN器件，其连接到硅子组件，并且其中PN器件形成在硅衬底上，所述硅衬底在其被嵌入第一玻璃中之前用于制造硅销 晶圆。 在一个实施例中，形成P-N器件包括选择性地将杂质扩散到硅引脚中并将P-N器件配置为用作温度传感器。

公开(公告)号：EP1379463B1

公开(公告)日：2006-08-02

申请号：EP02712794.3

申请日：2002-02-21

Applicant: ROBERT BOSCH GMBH

Inventor： BENZEL, Hubert ,  WEBER, Heribert ,  SCHAEFER, Frank

IPC: B81B3/00 ,  B81C1/00 ,  G01F1/684 ,  G01F1/688 ,  G01F1/699

CPC classification number: B81C1/00047 ,  B81B2201/0278 ,  B81C2201/0115 ,  B81C2201/0139

Abstract: The invention relates to a method for producing a semiconductor component (100; ...; 700), particularly a multilayer semiconductor component, preferably a micromechanical component such as, in particular, a heat-conducting sensor, which has a semiconductor substrate (101), particularly made of silicon, and a sensor area (404). The aim of the invention is to economically produce a thermal insulation between the semiconductor substrate (101) and the sensor area (404). To this end, a porous layer (104; 501) is provided in the semiconductor component (100; ...; 700).

公开(公告)号：EP1227307B1

公开(公告)日：2005-07-27

申请号：EP01961319.9

申请日：2001-09-03

Applicant: Nikon Corporation

Inventor： ISHIZUYA, Tohru ,  SUZUKI, Junji

IPC: G01J5/40

CPC classification number: B81B3/0081 ,  B81B2201/0278 ,  B81B2201/042 ,  B81B2203/0109 ,  G01J5/40 ,  H01L27/14812 ,  H01L27/14818 ,  H01L27/14875

Abstract: A thermal displacement element comprises a substrate, and a supported member supported on the substrate. The supported member includes first and second displacement portions, a heat separating portion exhibiting a high thermal resistance and a radiation absorbing portion receiving the radiation and converting it into heat. Each of the first and second displacement portions has at least two layers of different materials having different expansion coefficients and stacked on each other. The first displacement portion is mechanically continuous to the substrate without through the heat separating portion. The radiation absorbing portion and the second displacement portion are mechanically continuous to the substrate through the heat separating portion and the first displacement portion. The second displacement portion is thermally connected to the radiation absorbing portion. A radiation detecting device comprises a thermal displacement element and a displacement reading member fixed to the second displacement portion of the thermal displacement element and used for obtaining a predetermined change corresponding to a displacement in the second displacement portion.