公开(公告)号：EP2936571B1

公开(公告)日：2017-02-01

申请号：EP13814952.1

申请日：2013-12-20

申请人： Aledia ,  Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： POURQUIER, Eric ,  BONO, Hubert

IPC分类号： H01L33/08 ,  H01L29/06 ,  H01L29/66 ,  H01L33/00 ,  H01L33/16 ,  H01L33/24 ,  H01L33/02 ,  H01L29/12 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01L33/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L27/15 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/127 ,  H01L29/6609 ,  H01L29/66469 ,  H01L33/0008 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/02 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/48 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

公开(公告)号：EP2736080A4

公开(公告)日：2015-06-24

申请号：EP12825398

申请日：2012-08-21

申请人： JAPAN SCIENCE & TECH AGENCY

发明人： KOHDA MAKOTO ,  NITTA JUNSAKU ,  KOBAYASHI KENSUKE

IPC分类号： H01L29/66 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/06 ,  H01L29/423 ,  H01L29/778 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC分类号： H01L43/065 ,  B82Y10/00 ,  H01F10/00 ,  H01L27/222 ,  H01L29/0673 ,  H01L29/125 ,  H01L29/205 ,  H01L29/42356 ,  H01L29/66984 ,  H01L29/775 ,  H01L29/7783 ,  H01L29/82 ,  H01L29/861 ,  H01L43/08 ,  H01L43/10

公开(公告)号：EP2778122A1

公开(公告)日：2014-09-17

申请号：EP14159765.8

申请日：2014-03-14

申请人： Dow Global Technologies LLC ,  The University of Illinois ,  Rohm and Haas Electronic Materials LLC

发明人： Shim, Moonsub ,  Oh, Nuri ,  Zhai, You ,  Nam, Sooji ,  Trefonas, Peter ,  Deshpande, Kishori ,  Joo, Jake

IPC分类号： B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/732 ,  H01L29/737 ,  H01L31/0296 ,  H01L31/0352 ,  H01L29/12 ,  H01L29/06 ,  H01L33/00 ,  H01L33/06 ,  H01L33/18

CPC分类号： H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02628 ,  H01L29/0669 ,  H01L29/068 ,  H01L29/125 ,  H01L29/127 ,  H01L29/225 ,  H01L31/0296 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/1828 ,  H01L33/0083 ,  H01L33/18 ,  H01L33/28 ,  H01L33/502 ,  H01L51/0037 ,  H01L51/0042 ,  H01L51/502 ,  H01L51/5072 ,  H01L2251/5369 ,  Y10S977/762 ,  Y10S977/825 ,  Y10S977/949

摘要： Disclosed herein is a semiconducting nanoparticle (100) comprising a one-dimensional semiconducting nanoparticle (102), for example a nanowire, having a first end and a second end; where the second end is opposed to the first end; and two first endcaps (108), one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction (103); where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction (103); and where the first semiconductor and the second semiconductor are chemically different from each other.

摘要翻译： 公开是半导体纳米颗粒（100），包括一维半导体纳米颗粒（102）对于实施例的纳米线，具有第一端和第二端; 其中所述第二端相对的第一端部; 以及两个第一端盖（108），其中接触第一端中的一个，而另一个触点分别与一维半导体纳米粒子的所述第二端的; 其中所述第一端盖确实接触第一端包括第一半导体，并且其中所述第一端盖从所述一维半导体纳米颗粒的第一端延伸以形成第一纳米晶体异质结（103）; 其中所述第一端盖确实接触第二端包括第二半导体; 其中，所述第一端盖从所述一维半导体纳米颗粒的第二端延伸，以形成第二纳米晶体异质结（103）; 且其中所述第一半导体和所述第二半导体是从海誓山盟化学上不同的。

公开(公告)号：EP2566813A1

公开(公告)日：2013-03-13

申请号：EP11720073.3

申请日：2011-05-05

申请人： Spawnt Private S.à.r.l.

发明人： AUNER, Norbert ,  BAUCH, Christian ,  DELTSCHEW, Rumen ,  HOLL, Sven ,  LIPPOLD, Gerd ,  MOHSSENI, Javad

IPC分类号： C01B33/027 ,  C01G17/00

CPC分类号： H01L21/0262 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B33/027 ,  C01B33/03 ,  C01B33/1071 ,  C01B33/10773 ,  C01G17/00 ,  C01P2004/16 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C30B25/00 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B29/60 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/02653 ,  H01L29/0669 ,  H01L29/125 ,  H01L31/035227

摘要： The invention relates to nano-wires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nano-wires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si-Si and/or Ge-Si and/or Ge-Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.

公开(公告)号：EP1649521B1

公开(公告)日：2012-12-19

申请号：EP04739806.0

申请日：2004-06-11

申请人： Humboldt-Universität zu Berlin

发明人： MASSELINK, William, Ted ,  SEMTSIV, Mykhaylo, Petrovych

IPC分类号： H01L31/0352 ,  H01S5/34 ,  H01L29/12

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L29/125 ,  H01L29/205 ,  H01L31/0352 ,  H01L31/035236

公开(公告)号：EP1706906B1

公开(公告)日：2012-10-03

申请号：EP05714875.1

申请日：2005-01-19

申请人： Infineon Technologies AG

发明人： KREUPL, Franz ,  SEIDEL, Robert

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/12 ,  H01L21/336 ,  H01L29/775 ,  H01L51/30 ,  H01L21/335 ,  H01L51/05 ,  H01L51/00 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66439 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

公开(公告)号：EP2064745A1

公开(公告)日：2009-06-03

申请号：EP07803546.6

申请日：2007-09-18

申请人： QuNano AB

发明人： OHLSSON, Jonas ,  SAMUELSON, Lars ,  LIND, Erik ,  WERNERSSON, Lars-Erik ,  LÖWGREN, Truls

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L33/00 ,  C30B29/60 ,  H01L29/51 ,  H01L29/49

CPC分类号： H01L29/7827 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66439 ,  H01L29/66666 ,  H01L29/775 ,  H01L29/7828 ,  H01L29/78642 ,  H01L33/24 ,  Y10S977/888 ,  Y10S977/89

摘要： The present invention relates to providing layers of different thickness on vertical and horizontal surfaces (15, 20) of a vertical semiconductor device (1). In particular the invention relates to gate electrodes and the formation of precision layers (28) in semiconductor structures comprising a substrate (10) and an elongated structure (5) essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device (1) is utilised in combination with either anisotropic deposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.

摘要翻译： 本发明涉及在垂直半导体器件（1）的垂直和水平表面（15，20）提供不同厚度的层。 在本发明特别涉及到栅电极和精度层在半导体结构的形成（28）包括（10）和细长结构的基板（5）基本上由基底站立起来。 。根据本发明的方法中的装置（1）被用在结合要么各向异性沉积或各向异性去除沉积的材料来形成的精度非常高的垂直或水平层的垂直几何形状。

公开(公告)号：EP2044631A2

公开(公告)日：2009-04-08

申请号：EP07872710.4

申请日：2007-07-24

申请人： University Of Rochester

发明人： DIDUCK, Quentin ,  MARGALA, Martin

IPC分类号： H01L29/06

CPC分类号： H01L27/0605 ,  B82Y10/00 ,  H01L29/125 ,  H01L29/205 ,  H01L29/66977 ,  H01L29/7784 ,  H01L29/8725 ,  H03K19/08

摘要： A quantum well is formed in a substrate to define a hub, ports extending from the hub, and a deflective structure in the hub. Electrons move through the hub and ports according to the ballistic electron effect. Gates control the movement of the electrons, causing them to be incident on the deflective structure on one side or the other, thus controlling the direction in which they are deflected and the port through which they pass.

公开(公告)号：EP1602126A1

公开(公告)日：2005-12-07

申请号：EP03797023.3

申请日：2003-12-15

申请人： INTEL CORPORATION

发明人： DOYLE, Brian ,  MURTHY, Anand ,  CHAU, Robert

IPC分类号： H01L21/20

CPC分类号： H01L29/66795 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0262 ,  H01L29/125 ,  H01S5/341

摘要： A method is described for forming an element of a microelectronic circuit. A sacrificial layer is formed on an upper surface of a support layer. The sacrificial layer is extremely thin and uniform. A height-defining layer is then formed on the sacrificial layer, whereafter the sacrificial layer is etched away so that a well-defined gap is left-between an upper surface of the support layer and a lower surface of the height-defining layer. A monocrystalline semiconductor material is then selectively grown from a nucleation silicon site through the gap. The monocrystalline semiconductor material forms a monocrystalline layer having a thickness corresponding to the thickness of the original sacrificial layer.

公开(公告)号：EP1029359A1

公开(公告)日：2000-08-23

申请号：EP98966445.3

申请日：1998-11-09

申请人： Kendall, Don, L.

发明人： Kendall, Don, L.

IPC分类号： H01L29/06

CPC分类号： H01L51/0046 ,  B82B1/00 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0657 ,  H01L29/125 ,  H01L29/127 ,  H01L29/158 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/775 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/0052 ,  Y10S438/962

摘要： The present invention provides a quantum structure product (10) comprising a substrate (16) having quantum ridges (14) and quantum tips (24) on at least one surface thereof. In some embodiments of the invention quantum ridges (14) may support quantum wires (12) and the quantum tips (24) may support quantum dots (22). Grooves (18) which separate the quantum ridges (14) and quantum tips (24) from each other may be shallow or deep, and may contain organic molecules, fullerene tubes, and fullerene balls.