摘要:
A microelectronic assembly 100 can include a substrate 102 having first and second surfaces 104, 106 and first and second openings 116, 126 extending between the first and second surfaces, the first and second openings each having a long dimension extending in respective first and second transverse directions. The microelectronic assembly 100 can also have first and second microelectronic elements 136, 153 each having bond pads 142, 159 in a central region 924, 932 of a front surface 140, 157 thereof aligned with the respective first and second openings 116, 126. The front surface 140 of the first microelectronic element 136 can confront the first surface 104, and the front surface 157 of the second microelectronic element 153 can face a rear surface 138 of the first microelectronic element and can project beyond an edge 146 of the first microelectronic element. The bond pads 142, 159 of the first and second microelectronic elements 136, 153 can be electrically connected to conductive elements 109, 111 of the substrate 102.
摘要:
A first substrate provided with a receiving area made from a first metallic material is supplied. A second substrate provided with an insertion area comprising a base surface and at least two bumps made from a second metallic material is arranged facing the first substrate. The bumps are salient from the base surface. A pressure is applied between the first substrate and the second substrate so as to make the bumps penetrate into the receiving area. The first metallic material reacts with the second metallic material so as to form a continuous layer of an intermetallic compound having a base formed by the first and second metallic materials along the interface between the bumps and the receiving area.
摘要:
A high-frequency module is integrally formed from at least some of circuit components forming a first wireless system using a first frequency band and at least some of circuit components forming a second wireless system using a second frequency band. The high-frequency module includes a multilayer substrate (3) formed from a plurality of stacked dielectric layers, a first terminal group (31) disposed on a first surface of the multilayer substrate (3), where a plurality of terminals (21 and 25a-25d) are arranged along a first side (15) of four sides forming the first surface, and a second terminal group (32) disposed on the first surface, where a plurality of terminals (22, 25d, 26a, and 26b) are arranged along a second side (16) different from the first side (15). The first terminal group (31) includes a first antenna terminal (21) of the first wireless system whereas the second terminal group (32) includes a second antenna terminal (22) of the second wireless system.
摘要:
An integrated electronic device (X) includes a substrate (S), passive components, pads for external connection, and three-dimensional wiring. The passive components includes a multi-stage coil inductor (10A) provided on the substrate. The multi-stage coil inductor has a plurality of coils (11, 12) disposed in several layers. Mutually adjacent coil wires are spaced-apart from each other. The three-dimensional wiring includes a first wiring portion (31) which extends on the substrate, a second wiring portion (32) which extends apart from but parallel to the substrate, and a third wiring portion (33) connecting the first wiring portion to the second wiring portion.
摘要:
A method is disclosed for forming conductive vias in a substrate by filling preformed via holes, preferably through via holes, with conductive material. The method includes providing a plurality of preformed objects at least partly including ferromagnetic material on a surface of the substrate; providing a magnetic source on an opposite side of the substrate with respect to the plurality of preformed objects, thereby at least partly aligning at least a portion of the preformed objects with a magnetic field associated with the magnetic source; and moving the magnetic source relative the substrate, or vice versa, thereby moving the at least portion of the preformed objects into at least a portion of the via holes.
摘要:
To shorten the time required for bonding conductor films containing high melting point metals containing, for example, Cu as the main component using a low melting point metal containing, for example, Sn as the main component. A heat bonding process is carried out in a state where low melting point metal layers (16 and 18) containing low melting point metals containing, for example, Sn as the main component in such a manner as to sandwich, in the thickness direction, a high melting point metal layer (17) containing a high melting point metal containing, for example, Cu as the main component which is the same as high melting point metals constituting first and second conductor films (13 and 14) to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers (16 and 18) can be shortened. Thus, the time required for the diffusion can be shortened, and thus the time required for the bonding can be shortened.