公开(公告)号：EP2947683A2

公开(公告)日：2015-11-25

申请号：EP15164662.7

申请日：2015-04-22

申请人： Broadcom Corporation

发明人： Law, Edward ,  Zhao, Sam Ziqun ,  Hu, Kunzhong ,  Khan, Rezaur Rahman

IPC分类号： H01L21/56

摘要： A reconstituted semiconductor package and a method of making a reconstituted semiconductor package are described. An array of die-attach substrates is formed onto a carrier. A semiconductor device is mounted onto a first surface of each of the die-attach substrates. An interposer substrate is mounted over each of the semiconductor devices. The interposer substrates are electrically connected to the first surface of the respective die-attach substrates. A molding compound is filled in open spaces within and between the interposer substrates mounted to their respective die-attach substrates to form an array of reconstituted semiconductor packages. Electrical connections are mounted to a second surface of the die-attach substrates. The array of reconstituted semiconductor packages is singulated through the molding compound between each of the die-attach substrates and respective mounted interposer substrates.

摘要翻译： 描述了重构的半导体封装和制造重构的半导体封装的方法。 在一个载体上形成一个管芯附着基片阵列。 半导体器件安装在每个管芯附着基板的第一表面上。 中介层基板安装在每个半导体器件上。 中介层基板电连接到相应的管芯附着基板的第一表面。 模制化合物被填充到安装到它们各自的管芯附着基板的内插基板内部和之间的开放空间中，以形成重组半导体封装的阵列。 电连接被安装到管芯附着基板的第二表面。 重构的半导体封装阵列通过每个管芯附着基板和相应安装的中介层基板之间的模制化合物被分离。

公开(公告)号：EP1858076A3

公开(公告)日：2009-11-11

申请号：EP06026962.8

申请日：2006-12-27

申请人： Broadcom Corporation

发明人： Khan, Rezaur Rahman ,  Zhao, Sam Ziqun

IPC分类号： H01L23/367

摘要： A method, system, and apparatus for improved IC device packaging is described. In an aspect, an (IC) device package includes an IC die having at one or more contact pads, each contact pad located at a corresponding hotspot on a surface of the IC die. The package also includes a thermally conductive interposer which is thermally coupled to the IC die at the contact pads. In another aspect, an underfill material fills a space between the IC die and the interposer. The interposer may also be electrically coupled to the IC die. In an aspect, the interposer and the IC die are coupled through thermal interconnects or "nodules."

公开(公告)号：EP1914803A1

公开(公告)日：2008-04-23

申请号：EP07011819.5

申请日：2007-06-15

申请人： Broadcom Corporation

发明人： Zhao, Sam Ziqun ,  Khan, Rezaur Rahman ,  Law, Edward

IPC分类号： H01L23/31 ,  H01L23/13

CPC分类号： H01L23/3128 ,  H01L23/13 ,  H01L23/49816 ,  H01L24/48 ,  H01L24/73 ,  H01L24/91 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48465 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/85005 ,  H01L2224/9222 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18165 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/11 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Methods and apparatuses for improved thermal, electrical and/or mechanical performance in integrated circuit (IC) packages are described. An IC circuit package comprises a substrate (102) having a central opening (248). An IC die (118), resides within the opening in the substrate. Wirebonds (104) couple a plurality of bond pads (420) on a top surface of the IC die to a plurality of bond fingers on a top surface the substrate. An encapsulating material (108) encapsulates at least the IC die and the wirebonds such that at least a bottom surface (402) of the IC die is left exposed. The encapsulating material suspends the die such that at least a portion of the die is held within the opening in the substrate.

摘要翻译： 描述了用于改善集成电路（IC）封装中的热，电和/或机械性能的方法和装置。 IC电路封装包括具有中心开口（248）的衬底（102）。 IC芯片（118）位于衬底的开口内。 引线（104）将IC芯片的顶表面上的多个接合焊盘（420）耦合到衬底顶表面上的多个接合指状物。 封装材料（108）至少封装IC管芯和引线键，使得IC管芯的至少底面（402）被露出。 封装材料悬挂模具，使得模具的至少一部分保持在基板的开口内。

公开(公告)号：EP1870933A2

公开(公告)日：2007-12-26

申请号：EP07004382.3

申请日：2007-03-02

申请人： Broadcom Corporation

发明人： Zhao, Sam Ziqun ,  Khan, Rezaur Rahman

IPC分类号： H01L23/373 ,  H01L23/433

CPC分类号： H01L23/3675 ,  H01L21/565 ,  H01L22/10 ,  H01L23/315 ,  H01L23/367 ,  H01L23/4334 ,  H01L23/49816 ,  H01L24/17 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/16113 ,  H01L2224/16245 ,  H01L2224/17519 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48157 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/81897 ,  H01L2224/83101 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： Methods and apparatuses for improved integrated circuit (IC) packages (200) are described herein. In an aspect, an IC device package (200) includes an IC die (102) having a contact pad (202), where the contact pad (202) is located on a hotspot of the IC die (102). The hotspot is thermally coupled to a thermal interconnect member (208). In an aspect, the package is encapsulated in a mold compound (112). In a further aspect, a heat spreader (302) is attached to the mold compound (112), and is thermally coupled to the thermal interconnect member (208). In another aspect, a thermal interconnect member (208) thermally is coupled between the heat spreader (302) and the substrate.

摘要翻译： 本文描述了用于改进的集成电路（IC）封装（200）的方法和装置。 一方面，IC器件封装（200）包括具有接触焊盘（202）的IC管芯（102），其中接触焊盘（202）位于IC管芯（102）的热点上。 热点热耦合到热互连构件（208）。 在一方面，包装被包封在模具化合物（112）中。 在另一方面，散热器（302）附接到模具化合物（112），并且热耦合到热互连构件（208）。 在另一方面，热互连构件（208）热耦合在散热器（302）和衬底之间。

公开(公告)号：EP2940700A3

公开(公告)日：2015-12-09

申请号：EP15163694.1

申请日：2015-04-15

申请人： Broadcom Corporation

发明人： Khan, Rezaur Rahman ,  Vorenkamp, Pieter ,  Karikalan, Sampath Komarapalayam Velayudham

IPC分类号： H01F17/00 ,  H01F41/04 ,  H01F27/28

CPC分类号： H05K1/181 ,  H01F17/0013 ,  H01F17/045 ,  H01F38/14 ,  H01F41/046 ,  H01F2017/0053 ,  H01F2017/0066 ,  H01F2027/2809 ,  H01L2224/16225

摘要： A 3-dimensinal (3-D) magnetic core device includes a substrate, a first magnetic shell formed on the substrate, and a first group of conductive traces embedded in a first insulator layer formed on the first magnetic shell. A magnetic core plane is formed on the first insulator layer, and a second group of conductive traces are embedded in a second insulator layer formed on the magnetic core plane. A second magnetic shell is formed on the second insulator layer, and the first and second group of conductive traces are conductively coupled by using conductive vias.

摘要翻译： 三维（3-D）磁芯装置包括基板，形成在基板上的第一磁性壳以及嵌入在形成于第一磁性壳上的第一绝缘体层中的第一组导电迹线。 磁芯平面形成在第一绝缘体层上，第二组导电迹线嵌入形成在磁芯平面上的第二绝缘体层中。 第二磁性壳体形成在第二绝缘体层上，并且第一和第二组导电迹线通过使用导电通孔导电耦合。

公开(公告)号：EP2887393A2

公开(公告)日：2015-06-24

申请号：EP14004185.6

申请日：2014-12-11

申请人： Broadcom Corporation

发明人： Khan, Rezaur Rahman ,  Zhao, Sam

IPC分类号： H01L23/48 ,  H01L23/498

CPC分类号： H01L25/0655 ,  H01L21/4828 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/48 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/528 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2924/00014

摘要： Systems, apparatuses, and methods provided for semiconductor devices and integrated circuit (IC) packages that include compliant dielectric layers. In a through silicon via interposer or substrate (108), a compliant dielectric material (112) may be added to a surface of silicon material body to form a compliant dielectric layer. The compliant dielectric layer provides a thermal buffer and a stress buffer for a resulting IC package. The compliant dielectric material may be selected such that the coefficient of thermal expansion of the compliant dielectric material approximately matches the coefficient of thermal expansion of the circuit board on which the IC package is mounted. The compliant dielectric material may be selected such that it has a deformability that is greater than the silicon material body. Multiple sub-layers of compliant dielectric material may be used.

摘要翻译： 提供用于包括柔性介电层的半导体器件和集成电路（IC）封装的系统，装置和方法。 在硅通孔中介层或衬底（108）中，可以将柔顺介电材料（112）添加到硅材料主体的表面以形成柔性介电层。 柔性电介质层为所得到的IC封装提供热缓冲器和应力缓冲器。 柔性介质材料可以被选择为使得柔性介质材料的热膨胀系数大致匹配其上安装IC封装的电路板的热膨胀系数。 可以选择适应性介电材料，使得它具有比硅材料体大的可变形性。 可以使用多个柔顺介电材料子层。

公开(公告)号：EP1858080A3

公开(公告)日：2008-11-05

申请号：EP06026677.2

申请日：2006-12-22

申请人： Broadcom Corporation

发明人： Zhao, Sam Ziqun ,  Khan, Rezaur Rahman

IPC分类号： H01L23/495 ,  H01L23/433 ,  H01L23/552

CPC分类号： H01L23/552 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49816 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/0781 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Methods and apparatus for improved thermal performance and electromagnetic interference (EMI) shielding in integrated circuit (IC) packages are described. A die-up or die-down package includes an IC die, a die attach pad, a heat spreader cap coupled to the die attach pad defining a cavity, and one or more peripheral rows of leads surrounding the die attach pad. The leads do not protrude substantially from the footprint of the encasing structure. The die attach pad and the heat spreader cap defines an encasing structure that substantially encloses the IC die, and shields EMI emanating from and radiating towards the IC die. The encasing structure also dissipates heat generated by the IC die during operation.

公开(公告)号：EP1863086A3

公开(公告)日：2008-09-17

申请号：EP07004088.6

申请日：2007-02-27

申请人： Broadcom Corporation

发明人： Zhao, Sam Ziqun ,  Khan, Rezaur Rahman

IPC分类号： H01L23/495 ,  H01L23/552

CPC分类号： H01L23/4334 ,  H01L23/49537 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Methods and apparatus for improved thermal performance and electromagnetic interference (EMI) shielding in integrated circuit (IC) packages is described. A die-up or die-down package includes first and second caps defining a cavity, an IC die, and a leadframe. The leadframe includes a centrally located die attach pad, a plurality of leads, and a plurality of tie bars that couple the die attach pad to the leads. The IC die is mounted to the die attach pad. Planar rim portions of the first and second caps that surround the cavity are coupled to the leadframe. The first and second caps and the leadframe form an enclosure structure that substantially encloses the IC die, and shields EMI emanating from and radiating towards the IC die. The enclosure structure also dissipates heat generated by the IC die during operation.

公开(公告)号：EP1858076A2

公开(公告)日：2007-11-21

申请号：EP06026962.8

申请日：2006-12-27

申请人： Broadcom Corporation

发明人： Khan, Rezaur Rahman ,  Zhao, Sam Ziqun

IPC分类号： H01L23/367

摘要： A method, system, and apparatus for improved IC device packaging is described. In an aspect, an (IC) device package includes an IC die having at one or more contact pads, each contact pad located at a corresponding hotspot on a surface of the IC die. The package also includes a thermally conductive interposer which is thermally coupled to the IC die at the contact pads. In another aspect, an underfill material fills a space between the IC die and the interposer. The interposer may also be electrically coupled to the IC die. In an aspect, the interposer and the IC die are coupled through thermal interconnects or "nodules."

摘要翻译： 的方法，系统，以及用于改进的IC器件封装装置进行说明。 在一个方面，在集成电路（IC）器件封装包括IC到在一个或多个接触垫，位于该集成电路的该一个表面上的相应的热点每个接触垫的具有。 所以包包括导热内插器的所有热耦合到集成电路，在接触垫。 在另一个方面，在底部填充材料填充和插入的IC之间的空间，。 该内插器因此可以被电耦合到所述集成电路的是。 看点内插和被通过热互连或耦合在所述IC“结节。”在一个

公开(公告)号：EP2947683A3

公开(公告)日：2015-12-30

申请号：EP15164662.7

申请日：2015-04-22

申请人： Broadcom Corporation

发明人： Law, Edward ,  Zhao, Sam Ziqun ,  Hu, Kunzhong ,  Khan, Rezaur Rahman

IPC分类号： H01L21/56 ,  H01L23/31

摘要： A reconstituted semiconductor package and a method of making a reconstituted semiconductor package are described. An array of die-attach substrates is formed onto a carrier. A semiconductor device is mounted onto a first surface of each of the die-attach substrates. An interposer substrate is mounted over each of the semiconductor devices. The interposer substrates are electrically connected to the first surface of the respective die-attach substrates. A molding compound is filled in open spaces within and between the interposer substrates mounted to their respective die-attach substrates to form an array of reconstituted semiconductor packages. Electrical connections are mounted to a second surface of the die-attach substrates. The array of reconstituted semiconductor packages is singulated through the molding compound between each of the die-attach substrates and respective mounted interposer substrates.