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    Method of manufacturing silicon substrate with a conductive through-hole
    8.
    发明公开
    Method of manufacturing silicon substrate with a conductive through-hole 审中-公开
    一种制备包含贯通孔的导电性的硅衬底的过程

    公开(公告)号：EP2048923A2

    公开(公告)日：2009-04-15

    申请号：EP08166150.6

    申请日：2008-10-08

    申请人： Shinko Electric Industries Co., Ltd.

    发明人： Taguchi, Yuichi ,  Shiraishi, Akinori ,  Sunohara, Masahiro ,  Murayama, Kei ,  Sakaguchi, Hideaki ,  Higashi, Mitsutoshi

    IPC分类号： H05K3/00 ,  H05K3/40 ,  H01L21/3065

    CPC分类号： H01L21/486 ,  H01L21/76898 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/18301

    摘要： A method of manufacturing a substrate 10, includes: (a) forming a through hole 26 by etching a silicon substrate 21 from a first surface of the silicon substrate 21 by a Bosch process; (b) forming a thermal oxide film 39 such that the thermal oxide film 39 covers the first surface of the silicon substrate 21, a second surface of the silicon substrate 21 opposite to the first surface, and a surface of the silicon substrate 21 corresponding to a side surface of the through hole 26, by thermally oxidizing the silicon substrate 21 where the through hole 26 is formed; (c) removing the thermal oxide film 39; (d) forming an insulating film 22 such that the insulating film 22 covers the first and second surfaces of the silicon substrate 21 and the surface of the silicon substrate 21 corresponding to the side surface of the through hole 26; and (e) forming a through electrode 23 in the through hole 26 on which the insulating film 22 is formed.

    摘要翻译： 制造基板10的方法，包括：（a）以从由Bosch工艺在硅衬底21的第一表面中蚀刻的硅衬底21形成通孔26a; （B）形成的热氧化膜-39检查没有热氧化膜39覆盖的硅衬底21的第一表面，所述的硅衬底21相对于该第一表面的第二表面，并且所述硅衬底21对应于一个表面 通过热氧化，其中所述通孔26被形成在硅衬底21中的通孔26的侧表面上; （C）除去所述热氧化膜39; （D）形成绝缘膜-22检测的那样的绝缘膜22覆盖硅衬底21的第一表面和第二表面以及对应于贯通孔26的侧表面上的硅衬底21的表面上; 和（e）通过电极23在其上的绝缘膜22形成通孔26形成。