公开(公告)号：EP2278032A3

公开(公告)日：2012-06-20

申请号：EP10004458.5

申请日：2010-04-27

申请人： Hitachi Chemical Company, Ltd.

发明人： Yasuda, Yuusuke ,  Morita, Toshiaki ,  Ide, Eiichi ,  Inada, Teiichi

IPC分类号： C22C1/05 ,  B22F1/00 ,  H01B1/22

CPC分类号： B22F1/0074 ,  C22C1/05 ,  H01B1/22 ,  H01L21/565 ,  H01L23/049 ,  H01L23/10 ,  H01L23/13 ,  H01L23/142 ,  H01L23/15 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/34 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/492 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/498 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/05147 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/27334 ,  H01L2224/29005 ,  H01L2224/2901 ,  H01L2224/29078 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29373 ,  H01L2224/29376 ,  H01L2224/29378 ,  H01L2224/29381 ,  H01L2224/29384 ,  H01L2224/29387 ,  H01L2224/29893 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48839 ,  H01L2224/48855 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/832 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/0541 ,  H01L2924/0501 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/01018 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/2076 ,  H01L2924/01202 ,  H01L2224/83205

摘要： The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles (202), (B) silver oxide (203), and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.

公开(公告)号：EP2278032A2

公开(公告)日：2011-01-26

申请号：EP10004458.5

申请日：2010-04-27

申请人： Hitachi Chemical Company, Ltd.

发明人： Yasuda, Yuusuke ,  Morita, Toshiaki ,  Ide, Eiichi ,  Inada, Teiichi

IPC分类号： C22C1/05 ,  B22F1/00 ,  H01B1/22

CPC分类号： B22F1/0074 ,  C22C1/05 ,  H01B1/22 ,  H01L21/565 ,  H01L23/049 ,  H01L23/10 ,  H01L23/13 ,  H01L23/142 ,  H01L23/15 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/34 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/492 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/498 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/05147 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/27334 ,  H01L2224/29005 ,  H01L2224/2901 ,  H01L2224/29078 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29373 ,  H01L2224/29376 ,  H01L2224/29378 ,  H01L2224/29381 ,  H01L2224/29384 ,  H01L2224/29387 ,  H01L2224/29893 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48839 ,  H01L2224/48855 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/832 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/0541 ,  H01L2924/0501 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/01018 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/2076 ,  H01L2924/01202 ,  H01L2224/83205

摘要： The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles (202), (B) silver oxide (203), and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.

摘要翻译： 本发明提供的接合材料和接合在能够在没有施压情况下的较低温度高的接合强度的接合界面的金属接合的方法，相比于金属颗粒具有上的不大于平均粒径的接合材料 小于100nm。导电接合材料包括：（a）银颗粒（202），（B）氧化银（203），和（C）的分散剂包含含有不超过30个碳原子作为基本组分的有机材料，worin一个 在由100％的范围内的99.0％重量，提供的总量（A）的银粉末，（B）的氧化银粉末，和（C）的分散剂包含含有不超过30个碳原子的有机材料的 ， 换句话说，没有树脂粘合剂含有。

公开(公告)号：EP0357606A4

公开(公告)日：1990-06-05

申请号：EP88901361

申请日：1988-01-15

申请人： MOTOROLA INC

发明人： GREENSTEIN BERNARD

IPC分类号： B23K1/19 ,  B23K35/00 ,  H01L21/58 ,  H01L21/60 ,  H01L23/373

CPC分类号： H01L24/83 ,  B23K1/19 ,  B23K35/002 ,  B23K2035/008 ,  H01L23/3735 ,  H01L24/27 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/2908 ,  H01L2224/29084 ,  H01L2224/29111 ,  H01L2224/2918 ,  H01L2224/29184 ,  H01L2224/29186 ,  H01L2224/32245 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15724 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/00

摘要： A semiconductor die (12) is mounted on a metal substrate (14) via intermediate layers which permit the die to be readily soldered to the combination while yet reducing thermal stresses. A dielectric layer (16) is formed over the substrate (14), followed by another layer (18) of a selected metal, either molybdenum or tungsten. Atop the metal layer (18) is another layer (20) comprising a mixture of solder and the selected metal. A layer (22) of only solder is formed over the mixture, and the semiconductor die is bonded thereto by means of the layer (22) of solder.

公开(公告)号：EP3043378A3

公开(公告)日：2016-10-19

申请号：EP15201506.1

申请日：2011-08-30

申请人： EV Group E. Thallner GmbH

发明人： MARTINSCHITZ, Klaus ,  WIMPLINGER, Markus ,  REBHAN, Bernhard ,  HINGERL, Kurt

IPC分类号： H01L21/60 ,  B23K20/02 ,  H01L23/488 ,  B23K20/233

CPC分类号： H01L21/76251 ,  B23K20/021 ,  B23K20/023 ,  B23K35/001 ,  B23K35/0255 ,  B23K35/262 ,  B23K35/302 ,  B23K2201/40 ,  H01L21/185 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0384 ,  H01L2224/04026 ,  H01L2224/05557 ,  H01L2224/05647 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/275 ,  H01L2224/27505 ,  H01L2224/278 ,  H01L2224/2784 ,  H01L2224/29019 ,  H01L2224/2908 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29166 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/29211 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/3201 ,  H01L2224/325 ,  H01L2224/32501 ,  H01L2224/7565 ,  H01L2224/83013 ,  H01L2224/83022 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/1434 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/0105 ,  H01L2224/83

摘要： Die vorliegende Erfindung betrifft ein Verfahren zum permanenten Bonden eines ersten Festkörpersubstrats (1) mit einem eine erste Materie (A) enthaltenden zweiten Festkörpersubstrat (2) mit folgendem Ablauf:
- Aufbringung und/oder Ausbildung einer eine zweite Materie (B) enthaltenden Funktionsschicht (5) auf das zweite Festkörpersubstrat (2), wobei die Funktionsschicht (5) vor der Ausbildung des permanenten Bonds eine mittlere Dicke (R) zwischen 0,1 nm und 25 nm aufweist,
- Kontaktieren des ersten Festkörpersubstrats (1) mit dem zweiten Festkörpersubstrat (2) an der Funktionsschicht (5),
- Zusammenpressen der Festkörpersubstrate (1, 2),
wobei nach dem Kontaktieren eine Reaktion (Festkörperdiffusion und/oder Phasenumwandlung) der zweiten Materie (B) mit der ersten Materie (A) derart erfolgt, dass durch Unebenheiten der Oberflächen der Festkörpersubstrate (1, 2) vorhandene Lücken verschlossen werden.
Während des Bondens wird die Löslichkeitsgrenze des ersten Materials (A) für das zweite Material (B) nicht oder nur geringfügig überschritten, so dass Ausscheidung von intermetallischen Phasen möglichst weitgehend vermieden wird und dagegen Mischkristall ausgebildet wird.
Das erste Material (A) kann Kupfer und das zweite Material (B) kann Zinn sein.

公开(公告)号：EP2722410A1

公开(公告)日：2014-04-23

申请号：EP13192408.6

申请日：2010-04-27

申请人： Hitachi Chemical Co., Ltd.

发明人： YASUDA, Yuusuke ,  MORITA, Toshiaki ,  IDE, Eiichi ,  INADA, Teiichi

IPC分类号： C22C1/05 ,  B22F1/00 ,  H01B1/22

CPC分类号： B22F1/0074 ,  C22C1/05 ,  H01B1/22 ,  H01L21/565 ,  H01L23/049 ,  H01L23/10 ,  H01L23/13 ,  H01L23/142 ,  H01L23/15 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/34 ,  H01L23/3735 ,  H01L23/488 ,  H01L23/492 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/498 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/05147 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/27334 ,  H01L2224/29005 ,  H01L2224/2901 ,  H01L2224/29078 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29173 ,  H01L2224/29176 ,  H01L2224/29178 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/29366 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29373 ,  H01L2224/29376 ,  H01L2224/29378 ,  H01L2224/29381 ,  H01L2224/29384 ,  H01L2224/29387 ,  H01L2224/29893 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/48839 ,  H01L2224/48855 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/832 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/0541 ,  H01L2924/0501 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/01018 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/2076 ,  H01L2924/01202 ,  H01L2224/83205

摘要： According to the present invention an electrically conductive bonding material comprises silver particles (202), silver oxides particles (203), a dispersant comprising an organic material containing not more than 30 carbon atoms, and an organic solvent having a boiling point of not higher than 350°C as essential components. The total amount of the silver particles (202), the silver oxide particles (203), the dispersant, and the organic solvent is 100 mass parts and an amount of the organic solvent is not more than 90 mass parts. The silver particles (202) are in flake form; and the total amount of the silver particles (202), the silver oxide particles (203), the dispersant, and the organic solvent is in a range of 99.0% to 100% by weight.

摘要翻译： 。根据导电接合材料的本发明包括银颗粒（202），银氧化物粒子（203），分散剂包括含有不超过30碳原子的有机材料，和在有机溶剂中具有不高于沸点 350℃作为必须成分。 银粒子（202）的总量中，氧化物的银颗粒（203），分散剂，有机溶剂为100质量份，并且对有机溶剂的量不超过90质量份。 银粒子（202）是薄片形式; 和银颗粒（202）的总量中，氧化物的银颗粒（203），分散剂，有机溶剂是在由范围为99.0％至100％重量。

公开(公告)号：EP2389337A4

公开(公告)日：2016-09-07

申请号：EP10738898

申请日：2010-01-13

申请人： NORTH STAR INNOVATIONS INC

发明人： MONTEZ RUBEN B ,  PAMATAT ALEX P

IPC分类号： B81C1/00 ,  B81B7/02 ,  H01L21/50 ,  H01L23/10

CPC分类号： H01L23/10 ,  B81B2207/097 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  H01L21/50 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/02 ,  H01L2224/022 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/04026 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05638 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/29013 ,  H01L2224/29016 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83411 ,  H01L2224/83424 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/83481 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2924/10157 ,  H01L2924/15159 ,  H01L2924/164 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/83

公开(公告)号：EP3043378A2

公开(公告)日：2016-07-13

申请号：EP15201506.1

申请日：2011-08-30

申请人： EV Group E. Thallner GmbH

发明人： MARTINSCHITZ, Klaus ,  WIMPLINGER, Markus ,  REBHAN, Bernhard ,  HINGERL, Kurt

IPC分类号： H01L21/60 ,  B23K20/02 ,  H01L23/488 ,  B23K20/233

CPC分类号： H01L21/76251 ,  B23K20/021 ,  B23K20/023 ,  B23K35/001 ,  B23K35/0255 ,  B23K35/262 ,  B23K35/302 ,  B23K2201/40 ,  H01L21/185 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0384 ,  H01L2224/04026 ,  H01L2224/05557 ,  H01L2224/05647 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/275 ,  H01L2224/27505 ,  H01L2224/278 ,  H01L2224/2784 ,  H01L2224/29019 ,  H01L2224/2908 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29166 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/29211 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/3201 ,  H01L2224/325 ,  H01L2224/32501 ,  H01L2224/7565 ,  H01L2224/83013 ,  H01L2224/83022 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/1434 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/0105 ,  H01L2224/83

摘要： Die vorliegende Erfindung betrifft ein Verfahren zum permanenten Bonden eines ersten Festkörpersubstrats (1) mit einem eine erste Materie (A) enthaltenden zweiten Festkörpersubstrat (2) mit folgendem Ablauf:
- Aufbringung und/oder Ausbildung einer eine zweite Materie (B) enthaltenden Funktionsschicht (5) auf das zweite Festkörpersubstrat (2), wobei die Funktionsschicht (5) vor der Ausbildung des permanenten Bonds eine mittlere Dicke (R) zwischen 0,1 nm und 25 nm aufweist,
- Kontaktieren des ersten Festkörpersubstrats (1) mit dem zweiten Festkörpersubstrat (2) an der Funktionsschicht (5),
- Zusammenpressen der Festkörpersubstrate (1, 2),
wobei nach dem Kontaktieren eine Reaktion (Festkörperdiffusion und/oder Phasenumwandlung) der zweiten Materie (B) mit der ersten Materie (A) derart erfolgt, dass durch Unebenheiten der Oberflächen der Festkörpersubstrate (1, 2) vorhandene Lücken verschlossen werden.
Während des Bondens wird die Löslichkeitsgrenze des ersten Materials (A) für das zweite Material (B) nicht oder nur geringfügig überschritten, so dass Ausscheidung von intermetallischen Phasen möglichst weitgehend vermieden wird und dagegen Mischkristall ausgebildet wird.
Das erste Material (A) kann Kupfer und das zweite Material (B) kann Zinn sein.

摘要翻译： 一种用于在第一固体基材粘结到第二固体基材方法，其包含以下步骤的第一材料，爱尤其是以下序列：形成或其中包含的第二材料的第二固体基材的功能层的应用，使得接触 第一固体基材与所述功能层上的第二固体基材，压合在固体基质用于形成第一和第二固体基材之间形成永久键，通过固相扩散和/或与所述第一材料的相变的至少部分增强 第二材料，以在被引发的功能层增加体积。

公开(公告)号：EP2729961A1

公开(公告)日：2014-05-14

申请号：EP11749832.9

申请日：2011-08-30

申请人： Ev Group E. Thallner GmbH

发明人： MARTINSCHITZ, Klaus ,  WIMPLINGER, Markus ,  REBHAN, Bernhard ,  HINGERL, Kurt

IPC分类号： H01L21/60 ,  H01L23/488

CPC分类号： H01L21/76251 ,  B23K20/021 ,  B23K20/023 ,  B23K35/001 ,  B23K35/0255 ,  B23K35/262 ,  B23K35/302 ,  B23K2201/40 ,  H01L21/185 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0384 ,  H01L2224/04026 ,  H01L2224/05557 ,  H01L2224/05647 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/275 ,  H01L2224/27505 ,  H01L2224/278 ,  H01L2224/2784 ,  H01L2224/29019 ,  H01L2224/2908 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29166 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/29211 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/3201 ,  H01L2224/325 ,  H01L2224/32501 ,  H01L2224/7565 ,  H01L2224/83013 ,  H01L2224/83022 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/1434 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/0105 ,  H01L2224/83

摘要： The present invention relates to a method for bonding a first solid substrate (1) to a second solid substrate (2), which contains a first material, comprising the following steps, in particular with the following sequence: - forming or applying a functional layer (5) containing a second material onto the second solid substrate (2), - making contact between the first solid substrate (1) and the second solid substrate (2) at the functional layer (5), - pressing together the solid substrates (1, 2) to form a permanent bond between the first and the second solid substrates (1, 2), at least partly reinforced by solid-state diffusion and/or phase transformation of the first material with the second material, wherein an increase in volume is brought about at the functional layer (5). During bonding, the solubility limit of the first material for the second material is not exceeded, or is only slightly exceeded, such that precipitation of intermetallic phases is avoided to the greatest possible extent and, by contrast, the solid solution is formed. The first material can be copper and the second material can be tin.

公开(公告)号：EP2389337A2

公开(公告)日：2011-11-30

申请号：EP10738898.5

申请日：2010-01-13

申请人： Freescale Semiconductor, Inc.

发明人： MONTEZ, Ruben B. ,  PAMATAT, Alex P.

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： H01L23/10 ,  B81B2207/097 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  H01L21/50 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/02 ,  H01L2224/022 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/04026 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05638 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/29013 ,  H01L2224/29016 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83411 ,  H01L2224/83424 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/83481 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2924/10157 ,  H01L2924/15159 ,  H01L2924/164 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/83

摘要： A method that in one embodiment is useful in bonding a first substrate (103) to a second substrate (303) includes forming a layer including metal over the first substrate. The layer including metal in one embodiment surrounds a semiconductor device, which can be a micro electromechanical system (MEMS) device. On the second substrate (303) is formed a first layer comprising silicon (401). A second layer (403) comprising germanium and silicon is formed on the first layer. A third layer (405) comprising germanium is formed on the second layer. The third layer is brought into contact with the layer including metal. Heat (and pressure in some embodiments) is applied to the third layer and the layer including metal to form a mechanical bond material between the first substrate and the second substrate in which the mechanical bond material is electrically conductive. In the case of the mechanical bond surrounding a semiconductor device such as a MEMS, the mechanical bond can be particularly advantageous as a hermetic seal for protecting the MEMS.

公开(公告)号：EP0357606A1

公开(公告)日：1990-03-14

申请号：EP88901361.0

申请日：1988-01-15

申请人： MOTOROLA, INC.

发明人： GREENSTEIN, Bernard

IPC分类号： B23K1 ,  B23K35 ,  H01L21 ,  H01L23

CPC分类号： H01L24/83 ,  B23K1/19 ,  B23K35/002 ,  B23K2035/008 ,  H01L23/3735 ,  H01L24/27 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/2908 ,  H01L2224/29084 ,  H01L2224/29111 ,  H01L2224/2918 ,  H01L2224/29184 ,  H01L2224/29186 ,  H01L2224/32245 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15724 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/00

摘要： Un dé à semi-conducteur (12) est monté sur un substrat de métal (14) au moyen de couches intermédiaires qui permettent un soudage immédiat du dé sur la surface composée tout en réduisant les contraintes thermiques. Une couche diélectrique (16) est formée sur le substrat (14), suivie par une autre couche (18) constituée par un métal choisi qui est soit du molybdène soit du tungstène. Sur la couche en métal (18) est placée une autre couche (20) qui comprend un mélange de soudure et du métal choisi. Une couche (22) de soudure uniquement est formée sur le mélange et le dé à semi-conducteur est soudé sur le mélange au moyen de la couche de soudure (22).