公开(公告)号：EP2779232A3

公开(公告)日：2014-12-03

申请号：EP14160005.6

申请日：2014-03-14

申请人： Renesas Electronics Corporation

发明人： Kajiwara, Ryoichi ,  Nakajo, Takuya ,  Arai, Katsuo ,  Yato, Yuichi ,  Oka, Hiroi ,  Hozoji, Hiroshi

IPC分类号： H01L23/488 ,  H01L23/49 ,  H01L21/60 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/49 ,  H01L21/50 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3192 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49582 ,  H01L23/562 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29294 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/3011 ,  H01L2224/3201 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45565 ,  H01L2224/45616 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48997 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/83055 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/8592 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/10272 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/06 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/01013 ,  H01L2924/01051 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/83205

摘要： A semiconductor device (20, 24, 29, 32, 35, 38) includes a die pad (6), a wide gap semiconductor chip (SiC or GaN) (1) mounted on the die pad (6), a porous first sintered Ag layer (16) bonding the die pad (6) and the chip (1), and a reinforcing resin portion (17) covering a surface of the first sintered Ag layer (16) and a part of a side surface of the chip (1) and formed in a fillet shape. The semiconductor device (20, 24, 29, 32, 35, 38) further includes electrodes (1g, 1h, 2, 3, 4) on its main (1a) and back (1b) surfaces, the electrodes (1g, 1h, 2, 3, 4) being electrically connected to leads (7, 9, 11, 39), wherein the electrical connection at the front side is a wire (18, 19, 25, 26) connection and the electrical connection at the back side is the first sintered Ag layer (16). A porous second sintered Ag layer (36) or a second resin portion (30) reinforces the wire bonding portion on the electrode (1g, 2, 3). The semiconductor device (20, 24, 29, 32, 35, 38) further includes a sealing body (third resin) (14) which covers the chip (1), the first sintered Ag layer (16), and a part of the die pad (6).

摘要翻译： 一种半导体器件（20,24,29,32,35,38）包括管芯焊盘（6），安装在管芯焊盘（6）上的宽带隙半导体芯片（SiC或GaN）（1），多孔第一烧结体 （6）和芯片（1）接合的Ag层（16）;以及覆盖第一烧结Ag层（16）的表面和芯片侧面的一部分的加强树脂部分（17） 1）并形成圆角形状。 半导体器件（20,24,29,32,35,38）还包括在其主（1a）和背（1b）表面上的电极（1g，1h，2,3,4），电极（1g，1h， （2,3,4）电连接到引线（7,9,11,39），其中在正面的电连接是导线（18,19,25,26）连接并且背面的电连接 是第一个烧结Ag层（16）。 多孔的第二烧结Ag层（36）或第二树脂部分（30）加强电极（1g，2,3）上的引线键合部分。 半导体器件（20,24,29,32,35,38）还包括覆盖芯片（1），第一烧结Ag层（16）和第一烧结Ag层（16）的一部分的密封体（第三树脂） 芯片焊盘（6）。

公开(公告)号：EP3036761A2

公开(公告)日：2016-06-29

申请号：EP14771823.3

申请日：2014-09-11

申请人： Siemens Aktiengesellschaft

发明人： STROGIES, Jörg ,  WILKE, Klaus

IPC分类号： H01L21/60 ,  H01L23/488

CPC分类号： H05K3/341 ,  H01L24/05 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05647 ,  H01L2224/29011 ,  H01L2224/29034 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/3003 ,  H01L2224/3011 ,  H01L2224/30131 ,  H01L2224/30134 ,  H01L2224/30177 ,  H01L2224/3201 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32221 ,  H01L2224/32503 ,  H01L2224/33107 ,  H01L2224/83385 ,  H01L2224/83447 ,  H01L2224/8381 ,  H01L2224/83815 ,  H01L2224/83825 ,  H05K1/11 ,  H05K1/181 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The invention relates to a diffusion soldering method in which an electronic component (13) is placed on a substrate (12). The joining surfaces are designed such that cavities (20) are formed in the region of the joining gap (21). The formation of said cavities can be ensured for example by providing depressions in the mounting surface (18) of the component (13). The cavities (20) are advantageous in that solder material (19) can leak into the cavities when the component (13) is placed on the contact surface (14) of the substrate (12) in order to achieve the required width of the joining gap (21). Thus, the joining gap (21) can be selected so as to have a width so narrow that the joining gap is formed with a diffusion zone which bridges the joining gap (21) upon soldering. In this manner, a diffusion solder connection is produced in an advantageous manner even when using standard solder. The invention further relates to an electronic assembly (11) which has been produced in the aforementioned manner.

公开(公告)号：EP2779232A2

公开(公告)日：2014-09-17

申请号：EP14160005.6

申请日：2014-03-14

申请人： Renesas Electronics Corporation

发明人： Kajiwara, Ryoichi ,  Nakajo, Takuya ,  Arai, Katsuo ,  Yato, Yuichi ,  Oka, Hiroi ,  Hozoji, Hiroshi

IPC分类号： H01L23/488 ,  H01L23/49 ,  H01L21/60 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/49 ,  H01L21/50 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3192 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49582 ,  H01L23/562 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29294 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/3011 ,  H01L2224/3201 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45565 ,  H01L2224/45616 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48997 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/83055 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/8592 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/10272 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/06 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/01013 ,  H01L2924/01051 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/83205

摘要： A semiconductor device (20, 24, 29, 32, 35, 38) includes a die pad (6), a wide gap semiconductor chip (SiC or GaN) (1) mounted on the die pad (6), a porous first sintered Ag layer (16) bonding the die pad (6) and the chip (1), and a reinforcing resin portion (17) covering a surface of the first sintered Ag layer (16) and a part of a side surface of the chip (1) and formed in a fillet shape. The semiconductor device (20, 24, 29, 32, 35, 38) further includes electrodes (1g, 1h, 2, 3, 4) on its main (1a) and back (1b) surfaces, the electrodes (1g, 1h, 2, 3, 4) being electrically connected to leads (7, 9, 11, 39), wherein the electrical connection at the front side is a wire (18, 19, 25, 26) connection and the electrical connection at the back side is the first sintered Ag layer (16). A porous second sintered Ag layer (36) or a second resin portion (30) reinforces the wire bonding portion on the electrode (1g, 2, 3). The semiconductor device (20, 24, 29, 32, 35, 38) further includes a sealing body (third resin) (14) which covers the chip (1), the first sintered Ag layer (16), and a part of the die pad (6).

摘要翻译： 一种半导体器件（20，24，29，32，35，38）包括一个垫（6），一个宽带隙半导体芯片（SiC或GaN）的安装在所述管芯焊盘（6）（1），多孔第一烧结 Ag层（16）粘合在管芯焊盘（6）和所述芯片（1），和一个增强树脂部（17），其覆盖所述第一烧结Ag层（16）的表面和芯片的侧表面的一部分（ 1）和形成为圆角形状。 的半导体器件（20，24，29，32，35，38）还包括电极（1G，1H，2，3，4）在其主（1a）和背面（1b）中的表面，所述电极（1G，1H， 2，3，4）被电连接到引线（7，9，11，39），其中，在所述前侧的电连接是电线（18，19，25，26）连接，并且在所述背面上的电连接 是第一烧结Ag层（16）。 多孔烧结第二Ag层（36）或第二树脂部分（30）迫使纯粹在电极上的引线键合部分（1克，2，3）。 的半导体器件（20，24，29，32，35，38）还包括一个密封体（第三树脂）（14），其覆盖所述芯片（1），所述第一烧结Ag层（16），和的一个部分 垫（6）。