公开(公告)号：EP3271938A2

公开(公告)日：2018-01-24

申请号：EP16706510.1

申请日：2016-02-15

申请人： Pac Tech - Packaging Technologies GmbH

发明人： LÜDEKE, Heinrich ,  GEELHAAR, Ricardo

IPC分类号： H01L21/60 ,  H01L23/488 ,  B23K26/20

CPC分类号： H01L24/48 ,  B23K26/20 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L24/77 ,  H01L24/81 ,  H01L24/84 ,  H01L24/85 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/16225 ,  H01L2224/37026 ,  H01L2224/37147 ,  H01L2224/40091 ,  H01L2224/40225 ,  H01L2224/40491 ,  H01L2224/40992 ,  H01L2224/40997 ,  H01L2224/4112 ,  H01L2224/45005 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/73255 ,  H01L2224/77263 ,  H01L2224/77281 ,  H01L2224/77601 ,  H01L2224/77611 ,  H01L2224/77704 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/84214 ,  H01L2224/84424 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/84455 ,  H01L2224/84464 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2224/84986 ,  H01L2224/85051 ,  H01L2224/85203 ,  H01L2224/85214 ,  H01L2224/85379 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2224/13099

摘要： The invention relates to a chip arrangement (10) and a method for forming a contact connection (11) between a chip (18), in particular a power transistor or the like, and a conductor material strip (14), said conductor material strip being formed on a non-conductive substrate (12) and the chip being arranged on the substrate or on a conductor material strip (15). A silver paste (29) or copper paste is applied to a chip contact surface (25) of the chip and of the conductor material strip (28), a contact conductor (30) is dipped into the silver paste or the copper paste on the chip contact surface and into the silver paste or the copper paste on the conductor material strip, and a solvent contained in the silver paste or the copper paste is at least partially evaporated by heating. The silver paste or the copper paste is then sintered by means of laser energy, thereby forming the contact connection.

公开(公告)号：EP1758440A2

公开(公告)日：2007-02-28

申请号：EP06017139.4

申请日：2006-08-17

申请人： HITACHI, LTD.

发明人： Azuma, Katsunori c/o Hitachi Ltd ,  Morita, Toshiaki c/o Hitachi Ltd ,  Hozoji, Hiroshi c/o Hitachi Ltd ,  Suzuki, Kazuhiro c/o Hitachi Ltd ,  Satoh, Toshiya c/o Hitachi Ltd ,  Otsuka, Osamu c/o Hitachi Ltd

IPC分类号： H05K7/14

CPC分类号： H05K7/1432 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/40091 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/45124 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2224/37099

摘要： The power conversion apparatus 30 uses the semiconductor device 29. Said semiconductor device 29 includes a first group of power semiconductor elements 1a, 1b at least one of which is electrically connected between a first potential 5a and a third potential 6a, a second group of power semiconductor elements 2a-2d at least one of which is electrically connected between a second potential 7a and the third potential 6a, and a third group of power semiconductor elements lc, ld at least one of which is electrically connected between the first potential 5a and the third potential 6a. The second group 2a-2d is disposed between the first group 1a, 1b and third group lc, ld.
Thereby, a low-loss semiconductor device 29 having both inductance reducibility and heat generation balancing capability and an electric power conversion apparatus 30 using the same are provided.

摘要翻译： 功率转换装置30使用半导体装置29.所述半导体装置29包括第一组功率半导体元件1a，1b，其中至少一个电连接在第一电位5a和第三电位6a之间，第二组功率 其中至少一个电连接在第二电位7a和第三电位6a之间的半导体元件2a-2d和第三组功率半导体元件lc，ld，其中至少一个电连接在第一电位5a和 第三电位6a。 第二组2a-2d设置在第一组1a，1b和第三组1c，1d之间。 由此，提供兼具电感降低性和发热平衡能力的低损耗半导体装置29以及使用该低损耗半导体装置的电力转换装置30。

公开(公告)号：EP2372763A3

公开(公告)日：2016-07-27

申请号：EP11160367.6

申请日：2011-03-30

申请人： Hitachi, Ltd.

发明人： Azuma, Katsunori

IPC分类号： H01L25/07 ,  H01L23/31 ,  H01L23/367 ,  H01L23/495 ,  H01L23/051 ,  H01L23/433 ,  H01L23/00 ,  H01L25/11 ,  H01L23/473

CPC分类号： H01L24/73 ,  H01L23/051 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/49524 ,  H01L23/49551 ,  H01L24/31 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L25/115 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/73265 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： In a power semiconductor module, a semiconductor device (40) including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode (60) through soldering (20); a metal surface of one side of a laminated conductor (30) having a laminated structure in which at least two types of metals (32,33) are laminated is directly, intermetallically connected to the front side of the semiconductor device; a second extraction electrode (10) is connected to a metal surface of another side of the laminated conductor through soldering (21); and the laminated conductor (30) includes a plurality of arch-like protrusions (35) and a straight section (36) connecting the arch-like protrusions, the straight section (36) is connected with the front side of the semiconductor device (40), and the protrusions (35) are connected with the second extraction electrode (10).

摘要翻译： 在功率半导体模块中，包括在其正面和背面上用于连接的电极表面的半导体器件（40）的背面通过焊接（20）连接到第一引出电极（60）; 具有其中层叠至少两种金属（32,33）的层压结构的层压导体（30）的一侧的金属表面直接金属连接到半导体器件的前侧; 通过焊接（21）将第二引出电极（10）连接到层压导体的另一侧的金属表面; （30）包括多个拱形突起（35）和连接拱形突起的直线部分（36），直线部分（36）与半导体器件（40）的正面 ），并且突起（35）与第二引出电极（10）连接。

公开(公告)号：EP3018712A1

公开(公告)日：2016-05-11

申请号：EP13888740.1

申请日：2013-07-05

申请人： Renesas Electronics Corporation

发明人： YATO, Yuichi ,  OKA, Hiroi ,  OKUNISHI, Noriko ,  TAKADA, Keita

IPC分类号： H01L23/50

CPC分类号： H01L23/49513 ,  H01L21/565 ,  H01L23/13 ,  H01L23/16 ,  H01L23/24 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49582 ,  H01L23/49805 ,  H01L23/49844 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/743 ,  H01L24/77 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40091 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/84205 ,  H01L2224/84439 ,  H01L2224/8501 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/92157 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/1301 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device according to an embodiment is a semiconductor device in which a semiconductor chip mounted on a chip mounting part is sealed by resin and a first member is fixed to a chip mounting surface side between a peripheral portion of the semiconductor chip and a peripheral portion of the chip mounting part. Also, the first member is sealed by the resin. Also, a length of the first part of the chip mounting part in the first direction is larger than a length of the semiconductor chip in the first direction, in a plan view.

摘要翻译： 根据实施例的半导体器件是半导体器件，其中安装在芯片安装部分上的半导体芯片被树脂密封，并且第一部件被固定到半导体芯片的外围部分与外围部分之间的芯片安装表面侧 的芯片安装部分。 而且，第一部件由树脂密封。 而且，在平面图中，芯片安装部分的第一部分在第一方向上的长度大于半导体芯片在第一方向上的长度。

公开(公告)号：EP2120259A1

公开(公告)日：2009-11-18

申请号：EP09251320.9

申请日：2009-05-14

申请人： TEKTRONIX, INC.

发明人： Christensen, Dale E. ,  Miller, Curtis J.

IPC分类号： H01L21/60 ,  H01L23/49

CPC分类号： H01L24/85 ,  H01L24/36 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/40091 ,  H01L2224/40137 ,  H01L2224/45014 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48472 ,  H01L2224/48475 ,  H01L2224/48479 ,  H01L2224/48599 ,  H01L2224/49111 ,  H01L2224/4945 ,  H01L2224/85051 ,  H01L2224/85191 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/37099 ,  H01L2224/4554 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A ball-bump bonded ribbon-wire interconnect has a ball-bump (16) attached to an integrated circuit's bond pad (14). A ribbon-wire (18) has one end attached to the ball-bump (14) and its opposing end attached to a substrate's metallized surface (22). The ribbon-wire (18) may be wider than the ball-bump (16), and the ball-bump (16) may separate the ribbon-wire (18) from the integrated circuit's surface. The ribbon-wire may interconnect multiple integrated circuits, each of which has a ball-bump or a suitably wide metallized surface, to a substrate's metallized surface. The present invention also includes a method of electrically connecting an electronic component to a substrate.

摘要翻译： 球凸焊接带状线互连具有附接到集成电路的接合焊盘（14）的球凸点（16）。 带状线（18）的一端连接到球凸点（14），并且其相对端附接到基底的金属化表面（22）。 带状线（18）可以比球凸块（16）更宽，并且球凸起（16）可以将带状线（18）与集成电路的表面分离。 带状线可以将多个集成电路（每个集成电路具有球凸起或适当宽的金属化表面）连接到基板的金属化表面。 本发明还包括将电子部件电连接到基板的方法。

公开(公告)号：EP1603157B1

公开(公告)日：2008-01-09

申请号：EP04425399.5

申请日：2004-05-31

申请人： STMicroelectronics S.r.l.

发明人： Ferrara, Maurizio Maria ,  Magri', Angelo ,  Minotti, Agatino

IPC分类号： H01L23/31

CPC分类号： H01L24/84 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/0603 ,  H01L2224/16245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

公开(公告)号：EP1628346A2

公开(公告)日：2006-02-22

申请号：EP05076728.4

申请日：2005-07-27

申请人： Delphi Technologies, Inc.

发明人： Oberlin, Gary E. ,  Oman, Todd P.

IPC分类号： H01L23/48

CPC分类号： H01L23/49844 ,  H01L23/488 ,  H01L23/492 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/37011 ,  H01L2224/37599 ,  H01L2224/40091 ,  H01L2224/40225 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2224/37099

摘要： A solderable bar bond connector (16) establishes a primary interconnect between a substrate (12) and a high current terminal (34) of an IC chip (14) mounted on the substrate (12), and one or more secondary interconnects between the substrate (12) and low current terminals (36, 38, 40) of the IC chip (14). The bar bond connector (16) includes a plate portion (18) soldered to the high current terminal (34) of the IC chip (14) and a plurality of leg elements (20-32) extending from the plate portion (18) to multiple bond sites (42, 44, 46, 48) on the substrate (12). The underside of at least one leg element (20/26/32) is provided with a secondary circuit (50/52/54) including a conductor (58) that is electrically isolated from the respective leg element (20/26/32). The conductor (58) of the secondary circuit (50/52/54) is soldered to both the substrate (12) and a low current terminal (36/38/40) of the IC chip (14) for establishing a secondary interconnect in addition to the primary interconnect established by the plate portion (18) and the other leg elements (22, 24, 28, 30).

摘要翻译： 可焊接棒接合连接器（16）在衬底（12）和安装在衬底（12）上的IC芯片（14）的高电流端子（34）之间建立初级互连，并且在衬底 （12）和IC芯片（14）的低电流端子（36,38,40）。 棒接合连接器（16）包括焊接到IC芯片（14）的高电流端子（34）的板部分（18）和从板部分（18）延伸到多个支脚元件（20-32） 多个键合位点（42,44,46,48）在衬底（12）上。 至少一个支腿元件（20/26/32）的下侧设置有包括导体（58）的次级电路（50/52/54），该导体与相应的支脚元件（20/26/32）电隔离， 。 次级电路（50/52/54）的导体（58）焊接到IC芯片（14）的基板（12）和低电流端子（36/38/40），用于建立二次互连 除了由板部分（18）和其它支腿元件（22,24,28,30）建立的主互连之外。

公开(公告)号：EP2698817B1

公开(公告)日：2018-10-24

申请号：EP12822675.0

申请日：2012-06-14

申请人： Fuji Electric Co., Ltd.

发明人： SOYANO, Shin

IPC分类号： H01L21/60 ,  H01L25/07 ,  H01L25/18 ,  H01L23/34 ,  H01L23/495 ,  H01L23/498 ,  H01L23/373

CPC分类号： H01L23/49575 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49524 ,  H01L23/49844 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/37011 ,  H01L2224/37147 ,  H01L2224/4007 ,  H01L2224/40091 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/40993 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/77272 ,  H01L2224/83815 ,  H01L2224/84138 ,  H01L2224/84801 ,  H01L2224/85001 ,  H01L2224/85205 ,  H01L2224/92166 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01042 ,  H01L2924/014 ,  H01L2924/2076 ,  H01L2924/00015 ,  H01L2224/83205 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： Provided is a semiconductor device of improved reliability and ease of assembly associated with the downsizing thereof, in which a long shelf life of a solder joining a lead frame having a large current capacity and efficient release of heat from the lead frame can be achieved. In the semiconductor device, electronic components (23, 24) on an insulating substrate formed with a metal layer configuring a conductive pattern (12) are electrically connected to each other by a rectangular lead frame (22). In so doing, the lead frame (22) can correctly be positioned by inserting a wire member (27), which is disposed so as to bridge between the electronic components (23, 24), into an opening (21) formed to penetrate through the lead frame (22). Solder plates (28, 29) are sandwiched, respectively, between the electrode surfaces of the electronic components (23, 24) and joints (22a, 22b) of the lead frame (22), and are melted in a subsequent reflow step. The solder plates (28, 29) are provided with slits (28s, 29s) that are sized corresponding to the width of the opening (21) of the lead frame (22).

公开(公告)号：EP2568787A1

公开(公告)日：2013-03-13

申请号：EP12178021.7

申请日：2006-08-17

申请人： Hitachi Ltd.

发明人： Morita, Toshiaki ,  Azuma, Katsunori ,  Hozoji, Hiroshi ,  Suzuki, Kazuhiro ,  Satoh, Toshiya ,  Otsuka, Osamu

IPC分类号： H05K7/14 ,  H01L25/07

CPC分类号： H05K7/1432 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/40091 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/45124 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2224/37099

摘要： The power conversion apparatus 30 uses the semiconductor device 29. Said semiconductor device 29 includes a first group of power semiconductor elements 1a, 1b at least one of which is electrically connected between a first potential 5a and a third potential 6a, a second group of power semiconductor elements 2a-2d at least one of which is electrically connected between a second potential 7a and the third potential 6a, and a third group of power semiconductor elements lc, ld at least one of which is electrically connected between the first potential 5a and the third potential 6a. The second group 2a-2d is disposed between the first group 1a, 1b and third group 1c, 1d.
Thereby, a low-loss semiconductor device 29 having both inductance reducibility and heat generation balancing capability and an electric power conversion apparatus 30 using the same are provided.

摘要翻译： 电力转换装置30使用半导体器件29.所述半导体器件29包括第一组功率半导体元件1a，1b，其中至少一个电连接在第一电位5a和第三电位6a之间，第二组功率 半导体元件2a-2d，其至少一个电连接在第二电位7a和第三电位6a之间，第三组功率半导体元件1c，1d，其中至少一个电连接在第一电位5a和 第三潜力6a。 第二组2a-2d设置在第一组1a，1b和第三组1c，1d之间。 因此，提供具有电感还原性和发热平衡能力的低损耗半导体器件29和使用其的电力转换装置30。

公开(公告)号：EP1921911A1

公开(公告)日：2008-05-14

申请号：EP07021503.3

申请日：2007-11-05

申请人： Hitachi, Ltd.

发明人： Yoshinari, Hideto ,  Kaneko, Yujiro ,  Harada, Masahide ,  Tsuyuno, Nobtake ,  Fujiwara, Shinichi

IPC分类号： H05K7/20 ,  H01L23/433

CPC分类号： H05K7/209 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49811 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2224/37099 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3718 ,  H01L2224/37184 ,  H01L2224/37599 ,  H01L2224/40091 ,  H01L2224/40225 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A power module comprises a heat radiation layer (13) having the first main surface and the second main surface of reverse side opposed to the first main surface, an insulation layer (12) disposed on the first main surface of a radiation layer, a wiring potion for current circuit (11) disposed on the insulation layer and a plurality of switching elements (10) disposed on the insulation layer and electrically connected to the wiring portion of current circuit. A plurality of external terminals (20) are electrically connected to the wiring portions of current circuit. Furthermore, the module has a resin (2) sealing all of the insulation layer, a wiring portion for current circuit, switching elements and the first main surface of the radiation layer, and a resin sealing a portion of the second main surface of the radiation layer with the resin.

摘要翻译： 功率模块包括具有与第一主表面相对的第一主表面和反向第二主表面的散热层（13），设置在辐射层的第一主表面上的绝缘层（12），布线 设置在绝缘层上的电流电路（11）的药液和设置在绝缘层上并电连接到电流回路的配线部分的多个开关元件（10）。 多个外部端子（20）电连接到电流电路的布线部分。 此外，模块具有密封绝缘层全部的树脂（2），电流电路用配线部，开关元件以及辐射层的第一主面，树脂密封辐射的第二主面的一部分 层与树脂。