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    Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer
    1.
    发明授权
    Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer 失效
    具有形成在发光层上的p型半导体层的半导体发光二极管

    公开(公告)号：US05998810A

    公开(公告)日：1999-12-07

    申请号：US980256

    申请日：1997-11-28

    申请人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

    发明人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

    IPC分类号： H01S5/323 ,  H01L33/00

    CPC分类号： H01S5/32341 ,  H01S2302/00

    摘要： A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

    摘要翻译： 表现出450nm以下的振荡波长的半导体发光二极管，其特征在于，具有基板，形成在所述基板上或上方的下部包层，主要由III-V族化合物半导体构成，所述活性层直接形成在所述下部 主要由III-V族化合物半导体构成的上层p型覆盖层和主要由III-V族化合物半导体构成的有源层上直接形成的上部p型覆盖层。 该半导体发光二极管的特征在于，上p型覆盖层含有Mg，Si和至少一种用于补偿残留供体的杂质。

    Semiconductor laser
    3.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5740192A

    公开(公告)日：1998-04-14

    申请号：US767673

    申请日：1996-12-17

    申请人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

    发明人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

    IPC分类号： H01S5/323 ,  H01S3/19 ,  H01L33/00

    CPC分类号： H01S5/32341 ,  H01S2302/00

    摘要： A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

    摘要翻译： 表现出450nm以下的振荡波长的半导体激光器，其特征在于，具有基板，形成在所述基板上或上方的主要由III-V族化合物半导体构成的下部包层，直接形成在所述下部包层上的有源层和 主要由III-V族化合物半导体构成，上部p型覆盖层直接形成在主要由III-V族化合物半导体构成的有源层上。 该半导体激光器的特征在于，上部p型覆盖层含有Mg，Si和用于补偿残余供体的至少一种杂质。

    Semiconductor device and method of fabricating the same
    4.
    再颁专利
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：USRE38805E1

    公开(公告)日：2005-10-04

    申请号：US09915710

    申请日：2001-07-27

    申请人： Yasuo Ohba ,  Ako Hatano

    发明人： Yasuo Ohba ,  Ako Hatano

    IPC分类号： H01L29/201 ,  H01L29/205 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323

    CPC分类号： H01L33/32 ,  H01L29/201 ,  H01L29/205 ,  H01L33/007 ,  H01S5/0208 ,  H01S5/0425 ,  H01S5/32341

    摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al1-x-yGaxInyN (0≦x≦1, 0≦y≦1, x+y≦1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al1-s-tGasIntN (0≦s≦1, 0≦t≦1, s+t≦1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al1-x-yGaxInyN (0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and Al2O3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.

    摘要翻译： 半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al 1-x Ga x In In 在层形成缓冲层之上层叠的层（N，O，X，Y，Y，Y，Y）。 核形成缓冲层由Al 1-N 3 N（0≤s≤1,0<= 1）构成， t <= 1，s + t <= 1），并且形成在基板的表面上，使得核形成缓冲层具有用于控制极性和形成核的多个针孔。 一种制造半导体器件的方法包括以下步骤：在Al 2 O 3（0 < 掺杂有p型掺杂剂的半导体层，用于防止半导体层的构成元素的蒸发的盖层，形成帽盖层的半导体层，x <= 1，0 <= y <= 1，x + y < 其中添加了p型掺杂剂的AlN和Al 2 O 3 3，对半导体层进行热处理，并除去至少一部分盖 层。

    Semiconductor device and method of fabricating the same
    5.
    发明授权
    Semiconductor device and method of fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US5929466A

    公开(公告)日：1999-07-27

    申请号：US874299

    申请日：1997-06-13

    申请人： Yasuo Ohba ,  Ako Hatano

    发明人： Yasuo Ohba ,  Ako Hatano

    IPC分类号： H01L29/201 ,  H01L29/205 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323

    CPC分类号： H01L33/32 ,  H01L29/201 ,  H01L29/205 ,  H01L33/007 ,  H01S5/32341 ,  H01S5/0208 ,  H01S5/0425

    摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and A1.sub.2 O.sub.3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.

    摘要翻译： 半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0

    Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
    6.
    发明授权
    Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness 失效
    半导体异质结装置，具有3nm-10nm平均膜厚度的ALN缓冲层

    公开(公告)号：US5656832A

    公开(公告)日：1997-08-12

    申请号：US400865

    申请日：1995-03-08

    申请人： Yasuo Ohba ,  Ako Hatano

    发明人： Yasuo Ohba ,  Ako Hatano

    IPC分类号： H01L29/201 ,  H01L29/205 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01L27/15 ,  H01S3/19

    CPC分类号： H01L33/32 ,  H01L29/201 ,  H01L29/205 ,  H01L33/007 ,  H01S5/32341 ,  H01S5/0208 ,  H01S5/0425

    摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s .ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and Al.sub.2 O.sub.3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.

    摘要翻译： 半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0

    Semiconductor device including quaternary buffer layer with pinholes
    7.
    发明授权
    Semiconductor device including quaternary buffer layer with pinholes 失效
    半导体器件包括具有针孔的四元缓冲层

    公开(公告)号：US5909040A

    公开(公告)日：1999-06-01

    申请号：US866056

    申请日：1997-05-30

    申请人： Yasuo Ohba ,  Ako Hatano

    发明人： Yasuo Ohba ,  Ako Hatano

    IPC分类号： H01L29/201 ,  H01L29/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/323 ,  H01L31/0304

    CPC分类号： H01L29/201 ,  H01L29/205 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341 ,  H01S5/0208 ,  H01S5/0425

    摘要： A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al.sub.1-x-y Ga.sub.x In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1) and formed on a surface of the substrate with an average film thickness of 5 nm to 20 nm such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. The pinholes are formed among loosely formed small crystals of Al.sub.1-s-t Ga.sub.s In.sub.t N (0.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1, s+t.ltoreq.1).

    摘要翻译： 半导体器件包括单晶衬底，形成在单晶衬底上的核形成缓冲层，以及包括多个Al1-x-yGaxInyN（0≤x≤1,0）的小晶体中。

    Semiconductor light-emitting device with InGaAlp
    8.
    发明授权
    Semiconductor light-emitting device with InGaAlp 失效
    具有InGaAlp的半导体发光器件

    公开(公告)号：US5317167A

    公开(公告)日：1994-05-31

    申请号：US59221

    申请日：1993-05-10

    申请人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

    发明人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

    IPC分类号： H01L33/00 ,  H01L33/30

    CPC分类号： H01L33/30 ,  H01L33/0062

    摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.1-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

    摘要翻译： 半导体发光器件包括由多个In x Ga y Al 1-x-y P（0