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公开(公告)号：US5042043A
公开(公告)日：1991-08-20
申请号：US508694
申请日：1990-04-13
申请人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
发明人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
IPC分类号： H01L21/205 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/32 , H01S5/00 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/32 , H01S5/343 , H01S2302/00 , H01S5/3201 , H01S5/321 , H01S5/3216 , H01S5/32308 , H01S5/32341 , H01S5/34333
摘要： A green light-emitting semiconductor laser using a superlattice layer wherein BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure, or a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layers with a zinc blende type structure a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type, together constituting a double heterojunction.
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公开(公告)号：US5317167A
公开(公告)日：1994-05-31
申请号：US59221
申请日：1993-05-10
申请人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
发明人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
CPC分类号： H01L33/30 , H01L33/0062
摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.1-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
摘要翻译： 半导体发光器件包括由多个In x Ga y Al 1-x-y P（0
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公开(公告)号：US5079184A
公开(公告)日：1992-01-07
申请号：US538937
申请日：1990-06-15
申请人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
发明人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
IPC分类号： H01L21/205 , H01L33/00 , H01L33/06 , H01L33/30 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/323
CPC分类号： H01L33/305 , B82Y20/00 , H01L21/02392 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0075 , H01L33/06 , H01S5/3235 , H01S5/2231 , H01S5/2275 , H01S5/3054 , H01S5/3063 , H01S5/32308 , H01S5/32325 , H01S5/32391 , Y10S438/918 , Y10S438/925
摘要： A magnesium-doped p-type III-V Group compound semiconductor layer can be formed by metal organic chemical vapor deposition, by reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.
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公开(公告)号：US5076860A
公开(公告)日：1991-12-31
申请号：US414520
申请日：1989-09-29
申请人： Yasuo Ohba , Toshihide Izumiya , Ako Hatano
发明人： Yasuo Ohba , Toshihide Izumiya , Ako Hatano
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/0062 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/06 , H01S5/32341 , H01S5/343 , H01S5/34333 , Y10S148/065 , Y10S148/113
摘要： A compound semiconductor material includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.
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5.发明授权Vapor phase growth method of forming film in process of manufacturing semiconductor device 失效在制造半导体器件的过程中形成薄膜的气相生长方法
公开(公告)号：US5273933A
公开(公告)日：1993-12-28
申请号：US917321
申请日：1992-07-23
申请人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
发明人： Ako Hatano , Toshihide Izumiya , Yasuo Ohba
IPC分类号： H01L21/205 , H01L33/00 , H01L33/34 , H01L21/20
CPC分类号： H01L33/34 , H01L21/0237 , H01L21/02378 , H01L21/02392 , H01L21/02395 , H01L21/0242 , H01L21/02458 , H01L21/02461 , H01L21/02477 , H01L21/02529 , H01L21/0254 , H01L21/02543 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0037 , H01L33/0062 , H01L33/007 , H01L33/0087 , Y10S438/925
摘要： In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH.sub.3).sub.3 SiN.sub.3 is used as raw material for nitrogen. The films are grown at a relatively low temperature and the amount of nitrogen doped in the films is increased.
摘要翻译： 在制造短波长发光元件的过程中，使用MOCVD法在由SiC制成的衬底上形成n型和p型GaInAlN膜。 （CH3）3SiN3用作氮原料。 膜在相对低的温度下生长，并且膜中掺杂的氮的量增加。
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公开(公告)号：US5235194A
公开(公告)日：1993-08-10
申请号：US819976
申请日：1992-01-13
申请人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
发明人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
CPC分类号： H01L33/30 , H01L33/0062 , H01L2224/48463 , H01L2224/4918 , H01L2224/73265
摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
摘要翻译： 半导体发光器件包括由多个In x Ga y Al 1-x-y P（0
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公开(公告)号：US5103271A
公开(公告)日：1992-04-07
申请号：US588858
申请日：1990-09-27
申请人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
发明人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
CPC分类号： H01L33/30 , H01L33/0062
摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.l-x-y P (0.ltoreq.x, y.ltoreq.l) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.l) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer even though its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
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公开(公告)号：US5005057A
公开(公告)日：1991-04-02
申请号：US508685
申请日：1990-04-13
申请人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
发明人： Toshihide Izumiya , Yasuo Ohba , Ako Hatano
IPC分类号： H01L21/205 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/34 , H01L33/54 , H01L33/56
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/0062 , H01L33/007 , H01L33/04 , H01L33/06 , H01L33/10 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2924/181
摘要： A blue LED which includes a light-emitting layer having a p-n junction makes use of the superlattice structure being formed of a plurality of BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers which are alternately stacked, with the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers having a zinc blende type structure, or else makes use of a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1 and x+y.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure.
摘要翻译： 包括具有pn结的发光层的蓝色LED利用由交替层叠的多个BP层和GaxAl1-xN（0
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公开(公告)号：US5740192A
公开(公告)日：1998-04-14
申请号：US767673
申请日：1996-12-17
申请人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
发明人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
CPC分类号： H01S5/32341 , H01S2302/00
摘要： A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
摘要翻译： 表现出450nm以下的振荡波长的半导体激光器，其特征在于，具有基板，形成在所述基板上或上方的主要由III-V族化合物半导体构成的下部包层，直接形成在所述下部包层上的有源层和 主要由III-V族化合物半导体构成，上部p型覆盖层直接形成在主要由III-V族化合物半导体构成的有源层上。 该半导体激光器的特征在于，上部p型覆盖层含有Mg，Si和用于补偿残余供体的至少一种杂质。
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10.发明授权Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer 失效具有形成在发光层上的p型半导体层的半导体发光二极管
公开(公告)号：US05998810A
公开(公告)日：1999-12-07
申请号：US980256
申请日：1997-11-28
申请人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
发明人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
CPC分类号： H01S5/32341 , H01S2302/00
摘要： A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
摘要翻译： 表现出450nm以下的振荡波长的半导体发光二极管，其特征在于，具有基板，形成在所述基板上或上方的下部包层，主要由III-V族化合物半导体构成，所述活性层直接形成在所述下部 主要由III-V族化合物半导体构成的上层p型覆盖层和主要由III-V族化合物半导体构成的有源层上直接形成的上部p型覆盖层。 该半导体发光二极管的特征在于，上p型覆盖层含有Mg，Si和至少一种用于补偿残留供体的杂质。
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