公开(公告)号：US08911553B2

公开(公告)日：2014-12-16

申请号：US13248656

申请日：2011-09-29

Applicant: Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

Inventor： Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Thomas Nowak ,  Jianhua Zhou

IPC: C23C16/455 ,  C23C16/48 ,  C23C16/56 ,  H01L21/67 ,  C23C16/44 ,  H01L21/677

CPC classification number: C23C16/56 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/482 ,  H01L21/6719 ,  H01L21/67742 ,  Y10T137/0391

Abstract: Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.

Abstract translation: 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。

公开(公告)号：US20140004717A1

公开(公告)日：2014-01-02

申请号：US13903483

申请日：2013-05-28

Applicant: Kelvin CHAN ,  Alexandros T. DEMOS

Inventor： Kelvin CHAN ,  Alexandros T. DEMOS

IPC: H01L21/263

CPC classification number: H01L21/02348 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.

Abstract translation: 提供了一种用于修复和降低半导体制造中使用的低k电介质层的介电常数的方法。 在一个实施方案中，修复损坏的低k电介质层的方法，包括将多孔低k电介质层暴露于含乙烯基硅烷的化合物，并任选地将多孔低k电介质层暴露于紫外线（UV）固化过程。

公开(公告)号：US08389376B2

公开(公告)日：2013-03-05

申请号：US12714865

申请日：2010-03-01

Applicant: Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/76

CPC classification number: H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10S438/931

Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure including depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.

Abstract translation: 提供了用于形成包括气隙的结构的方法。 在一个实施方案中，提供了一种用于形成镶嵌结构的方法，包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层，沉积含致孔剂的材料，以及除去至少一部分 含致孔剂的材料，通过使造孔剂提供前体反应，在有机层中形成特征定义和多孔低介电常数层，在多孔低介电常数层上沉积有机层，用导电材料填充特征定义 在有机层上沉积掩模层和设置在特征定义中的导电材料，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，并形成相邻的气隙 导电材料。

公开(公告)号：US08058183B2

公开(公告)日：2011-11-15

申请号：US12481382

申请日：2009-06-09

Applicant: Zhenjiang Cui ,  May Yu ,  Alexandros T. Demos ,  Mehul Naik

Inventor： Zhenjiang Cui ,  May Yu ,  Alexandros T. Demos ,  Mehul Naik

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/20 ,  H01L21/36

CPC classification number: H01L21/3105 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/7684

Abstract: A method for restoring the dielectric constant of a low dielectric constant film is described. A porous dielectric layer having a plurality of pores is formed on a substrate. The plurality of pores is then filled with an additive to provide a plugged porous dielectric layer. Finally, the additive is removed from the plurality of pores.

Abstract translation: 描述了用于恢复低介电常数膜的介电常数的方法。 在基板上形成具有多个孔的多孔介电层。 然后用添加剂填充多个孔以提供堵塞的多孔介电层。 最后，从多个孔中除去添加剂。

公开(公告)号：US07989033B2

公开(公告)日：2011-08-02

申请号：US12183915

申请日：2008-07-31

Applicant: Kang Sub Yim ,  Alexandros T. Demos

Inventor： Kang Sub Yim ,  Alexandros T. Demos

IPC: C23C16/00 ,  B05D3/00 ,  B29C71/02 ,  B29C71/04 ,  C04B41/00 ,  C08J7/18

CPC classification number: C23C16/401 ,  C23C16/56

Abstract: A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

Abstract translation: 提供了一种在基片上沉积低介电常数膜的方法。 低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。 一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。 本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。 低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

公开(公告)号：US07879683B2

公开(公告)日：2011-02-01

申请号：US11869396

申请日：2007-10-09

Applicant: Amir Al-Bayati ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang “David” Cui ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Li-Qun Xia

Inventor： Amir Al-Bayati ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang “David” Cui ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Li-Qun Xia

IPC: H01L21/76

CPC classification number: H01L21/7682 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885

Abstract: A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches.

Abstract translation: 一种用于在互连结构的电介质材料中产生气隙的方法和装置。 一个实施例提供了一种用于形成半导体结构的方法，包括在衬底上沉积第一介电层，在第一介电层中形成沟槽，用导电材料填充沟槽，平坦化导电材料以暴露第一介电层， 在导电材料和暴露的第一电介质层上的阻挡膜，在介电阻挡膜上沉积硬掩模层，在介电阻挡膜和硬掩模层中形成图案，以暴露衬底的选定区域，氧化至少一部分 在衬底的选定区域中的第一介电层，去除第一电介质层的氧化部分以在导电材料周围形成反向沟槽，以及在反向沟槽中形成气隙，同时在反向沟槽中沉积第二电介质材料。

公开(公告)号：US20100151671A1

公开(公告)日：2010-06-17

申请号：US12714865

申请日：2010-03-01

Applicant: Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/768

CPC classification number: H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10S438/931

Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.

Abstract translation: 提供了用于形成包括气隙的结构的方法。 在一个实施例中，提供了一种用于形成镶嵌结构的方法，包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层，沉积含致孔剂的材料，以及除去至少一部分 含致孔剂的材料，通过使造孔剂提供前体反应，在有机层中形成特征定义和多孔低介电常数层，在多孔低介电常数层上沉积有机层，用导电材料填充特征定义 在有机层上沉积掩模层和设置在特征定义中的导电材料，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，并形成相邻的气隙 导电材料。

公开(公告)号：US07670924B2

公开(公告)日：2010-03-02

申请号：US12017930

申请日：2008-01-22

Applicant: Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/76

CPC classification number: H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10S438/931

Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.

Abstract translation: 提供了用于形成包括气隙的结构的方法。 在一个实施例中，提供了一种用于形成镶嵌结构的方法，包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层，沉积含致孔剂的材料，以及除去至少一部分 含致孔剂的材料，通过使造孔剂提供前体反应，在有机层中形成特征定义和多孔低介电常数层，在多孔低介电常数层上沉积有机层，用导电材料填充特征定义 在有机层上沉积掩模层和设置在特征定义中的导电材料，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，并形成相邻的气隙 导电材料。

公开(公告)号：US07611996B2

公开(公告)日：2009-11-03

申请号：US11085416

申请日：2005-03-21

Applicant: Francimar Schmitt ,  Yi Zheng ,  Kang Sub Yim ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Dustin W. Ho ,  Alexandros T. Demos ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Francimar Schmitt ,  Yi Zheng ,  Kang Sub Yim ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Dustin W. Ho ,  Alexandros T. Demos ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/469 ,  H01L21/31

CPC classification number: H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

Abstract translation: 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US07588803B2

公开(公告)日：2009-09-15

申请号：US11047785

申请日：2005-02-01

Applicant: Alexandros T. Demos ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Wen H. Zhu

Inventor： Alexandros T. Demos ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Wen H. Zhu

IPC: B05D3/06 ,  C08J7/18 ,  C23C14/30 ,  G21G1/10 ,  H01L21/00

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02271 ,  H01L21/02351 ,  H01L21/31633 ,  H01L21/76825

Abstract: According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different from the first energy level.

Abstract translation: 根据本发明的一个实施例，一种修改电介质层的机械，物理和/或电学性能的方法包括：以第一能级将介电层暴露于第一剂量的电子束辐射; 之后，在不同于第一能级的第二能级处将电介质层暴露于第二剂量的电子束辐射。