CHIP-SCALE PACKAGE
    5.
    发明申请
    CHIP-SCALE PACKAGE 审中-公开
    CHIP-SCALE包装

    公开(公告)号:US20120313243A1

    公开(公告)日:2012-12-13

    申请号:US13221323

    申请日:2011-08-30

    IPC分类号: H01L23/498 H01L23/48

    摘要: A chip-scale package includes an encapsulating layer, a chip embedded in the encapsulating layer and having an active surface exposed from the encapsulating layer, a buffering dielectric layer formed on the encapsulating layer and the chip, a build-up dielectric layer formed on the buffering dielectric layer, and a circuit layer formed on the build-up dielectric layer and having conductive blind vias penetrating the build-up dielectric layer and being in communication with the openings of the buffering dielectric layer and electrically connected to the chip, wherein the build-up dielectric layer and the buffering dielectric layer are made of different materials. Therefore, delamination does not occur between the buffering dielectric layer and the encapsulating layer, because the buffering dielectric layer is securely bonded to the encapsulating layer and the buffering dielectric layer is evenly distributed on the encapsulating layer.

    摘要翻译: 芯片级封装包括封装层,嵌入封装层中的芯片,并且具有从封装层露出的有源表面,形成在封装层和芯片上的缓冲电介质层,形成在封装层上的积聚介电层 缓冲电介质层和形成在积聚电介质层上的电路层,并且具有穿透积聚介电层并且与缓冲电介质层的开口连通并且电连接到芯片的导电盲孔,其中构建 介电层和缓冲电介质层由不同的材料制成。 因此,缓冲电介质层和封装层之间不会发生分层,因为缓冲电介质层牢固地结合到封装层,并且缓冲电介质层均匀地分布在封装层上。

    Package substrate having landless conductive traces
    6.
    发明授权
    Package substrate having landless conductive traces 有权
    封装衬底具有无地导电迹线

    公开(公告)号:US08304665B2

    公开(公告)日:2012-11-06

    申请号:US12266674

    申请日:2008-11-07

    IPC分类号: H05K1/11 H05K1/09 H01R9/00

    摘要: A package substrate having landless conductive traces is proposed, which includes a core layer with a plurality of plated through holes formed therein, and a plurality of conductive traces formed on at least a surface of the core layer. Each of the conductive traces has a connection end, a bond pad end, and a base body connecting the connection end and the bond pad end, the conductive trace is electrically connected to a corresponding one of the plated through holes through the connection end, and the connection end has a width greater than that of the base body but not greater than the diameter of the plated through hole, thereby increasing the contact area between the conductive trace and the plated through hole and preventing the contact surface of the conductive trace with the plated through hole from cracking.

    摘要翻译: 提出了具有无地导电迹线的封装衬底,其包括形成在其中的多个电镀通孔的芯层和形成在芯层的至少表面上的多个导电迹线。 每个导电迹线具有连接端,接合焊盘端和连接连接端和接合焊盘端的基体,导电迹线通过连接端电连接到相应的一个电镀通孔,以及 连接端具有大于基体的宽度,但不大于电镀通孔的直径,从而增加导电迹线和电镀通孔之间的接触面积,并且防止导电迹线的接触表面与 电镀通孔破裂。

    CHIP-SIZED PACKAGE AND FABRICATION METHOD THEREOF
    8.
    发明申请
    CHIP-SIZED PACKAGE AND FABRICATION METHOD THEREOF 审中-公开
    芯片尺寸的封装及其制造方法

    公开(公告)号:US20120001328A1

    公开(公告)日:2012-01-05

    申请号:US12967844

    申请日:2010-12-14

    IPC分类号: H01L23/498 H01L21/78

    摘要: A chip-sized package and a fabrication method thereof are provided. The method includes forming a protection layer on an active surface of a chip and attaching a non-active surface of the chip to a carrier made of a hard material; performing a molding process and removing a protection layer from the chip; performing an RDL process to prevent problems as encountered in the prior art, such as softening of adhesive films, an encapsulant overflow, a pliable chip and chip deviation or contamination caused by directly adhering the active surface of the chip to the adhesive film that may even lead to inferior electrical contacts between a circuit layer and a plurality of chip bond pads during subsequent RDL process, and cause the package to be scraped. Further, the carrier employed in this invention can be repetitively used in the process to help reduce manufacturing costs.

    摘要翻译: 提供了一种芯片尺寸的封装及其制造方法。 该方法包括在芯片的有源表面上形成保护层,并将芯片的非活性表面附着到由硬质材料制成的载体上; 执行模制过程并从芯片去除保护层; 执行RDL处理以防止现有技术中遇到的问题,例如粘合剂膜的软化,密封剂溢出,柔韧的芯片和芯片偏差或由将芯片的活性表面直接粘附到甚至可能粘合的粘合剂膜引起的污染 在随后的RDL处理期间导致电路层和多个芯片接合焊盘之间的较差的电接触,并导致封装被刮除。 此外,本发明中使用的载体可以在该过程中重复使用以帮助降低制造成本。

    PACKAGE SUBSTRATE HAVING LANDLESS CONDUCTIVE TRACES
    9.
    发明申请
    PACKAGE SUBSTRATE HAVING LANDLESS CONDUCTIVE TRACES 有权
    具有无轨导线的封装基板

    公开(公告)号:US20090283303A1

    公开(公告)日:2009-11-19

    申请号:US12266674

    申请日:2008-11-07

    IPC分类号: H05K1/09

    摘要: A package substrate having landless conductive traces is proposed, which includes a core layer with a plurality of plated through holes formed therein, and a plurality of conductive traces formed on at least a surface of the core layer. Each of the conductive traces has a connection end, a bond pad end, and a base body connecting the connection end and the bond pad end, the conductive trace is electrically connected to a corresponding one of the plated through holes through the connection end, and the connection end has a width greater than that of the base body but not greater than the diameter of the plated through hole, thereby increasing the contact area between the conductive trace and the plated through hole and preventing the contact surface of the conductive trace with the plated through hole from cracking.

    摘要翻译: 提出了具有无地导电迹线的封装衬底,其包括形成在其中的多个电镀通孔的芯层和形成在芯层的至少表面上的多个导电迹线。 每个导电迹线具有连接端,接合焊盘端和连接连接端和接合焊盘端的基体,导电迹线通过连接端电连接到相应的一个电镀通孔,以及 连接端具有大于基体的宽度,但不大于电镀通孔的直径,从而增加导电迹线和电镀通孔之间的接触面积,并且防止导电迹线的接触表面与 电镀通孔破裂。

    Nickel/gold pad structure of semiconductor package and fabrication method thereof
    10.
    发明申请
    Nickel/gold pad structure of semiconductor package and fabrication method thereof 审中-公开
    半导体封装的镍/金焊盘结构及其制造方法

    公开(公告)号:US20060049516A1

    公开(公告)日:2006-03-09

    申请号:US11145318

    申请日:2005-06-03

    IPC分类号: H01L23/48

    摘要: A nickel/gold (Ni/Au) pad structure of a semiconductor package and a fabrication method thereof are provided. The fabrication method includes preparing a core layer; forming a conductive trace layer on the core layer; patterning the conductive trace layer to form at least one pad of the conductive trace layer; applying a conductive layer; forming a photoresist layer to define a predetermined plating region on the pad, wherein the predetermined plating region is smaller in area than the pad; forming a Ni/Au layer on the predetermined plating region; removing the photoresist layer and etching away the conductive layer; and applying a solder mask layer and forming at least one opening in the solder mask layer to expose the pad, wherein the opening is larger in area than the Ni/Au layer. The Ni/Au pad structure fabricated by the above method can prevent a solder extrusion effect incurred in the conventional technology.

    摘要翻译: 提供半导体封装的镍/金(Ni / Au)焊盘结构及其制造方法。 制造方法包括制备芯层; 在芯层上形成导电迹线层; 图案化导电迹线层以形成至少一个导电迹线层的焊盘; 施加导电层; 形成光致抗蚀剂层以在所述焊盘上限定预定的镀覆区域,其中所述预定电镀区域的面积小于所述焊盘; 在预定的电镀区上形成Ni / Au层; 去除光致抗蚀剂层并蚀刻掉导电层; 以及施加焊接掩模层并在所述焊料掩模层中形成至少一个开口以露出所述焊盘,其中所述开口面积大于所述Ni / Au层。 通过上述方法制造的Ni / Au焊盘结构可以防止传统技术中引起的焊料挤出效应。