公开(公告)号：US08416190B2

公开(公告)日：2013-04-09

申请号：US12526255

申请日：2007-02-20

申请人： Shinichi Hirata ,  Hiroshi Osawa

发明人： Shinichi Hirata ,  Hiroshi Osawa

IPC分类号： G06F3/033

CPC分类号： A63F13/211 ,  A63F13/06 ,  A63F13/218 ,  A63F13/428 ,  A63F2300/105 ,  A63F2300/1056 ,  G06F3/033

摘要： There is provided an operation device that can be stably operated without taking up a lot of space when tilted by a user during the operation. The operation device includes: a support part (12) formed to be pressable against a supporting object in a state in which the user is holding the operation device; a pressing detection part (13) for detecting a state in which the support part (12) is pressed against the supporting object; and a tilt detection part for detecting a tilt of the operation device. The user changes the tilt of the operation device in a state in which the support part (12) is pressed against the supporting object to thereby implement the operation with respect to a connection apparatus.

摘要翻译： 提供了一种操作装置，其可以在操作期间在用户倾斜时不会占用大量空间而被稳定地操作。 操作装置包括：形成为在用户握持操作装置的状态下可压靠支撑物体的支撑部件（12）; 用于检测支撑部件（12）被压靠在支撑物体上的状态的按压检测部（13） 以及用于检测操作装置的倾斜的倾斜检测部。 用户在将支撑部件（12）压靠支撑物体的状态下改变操作装置的倾斜度，从而实现相对于连接装置的操作。

公开(公告)号：US20120228665A1

公开(公告)日：2012-09-13

申请号：US13480373

申请日：2012-05-24

申请人： Naoki FUKUNAGA ,  Hiroshi OSAWA

发明人： Naoki FUKUNAGA ,  Hiroshi OSAWA

IPC分类号： H01L33/42 ,  H01L33/32

CPC分类号： C23C14/5813 ,  C23C14/086 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

摘要： Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (VI) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film (15) including a dopant is laminated on a p-type semiconductor layer (14) of a gallium nitride-based compound semiconductor device (1). The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film (15).

摘要翻译： 提供一种制造具有低驱动电压（VI）和高的光输出耦合效率的氮化镓基化合物半导体发光器件的方法，氮化镓基化合物半导体发光器件和灯。 在制造氮化镓系化合物半导体发光元件的方法中，将含有掺杂剂的透明导电氧化物膜（15）层压在氮化镓系化合物半导体器件（p-type semiconductor semiconductor device）的p型半导体层（14）上 1）。 透明导电氧化物膜15在透明导电氧化物膜（15）层压之后，使用激光进行激光退火处理。

公开(公告)号：US20110187660A1

公开(公告)日：2011-08-04

申请号：US13003751

申请日：2009-03-25

申请人： Shinichi Hirata ,  Hiroshi Osawa

发明人： Shinichi Hirata ,  Hiroshi Osawa

IPC分类号： G06F3/041

CPC分类号： G06F3/04883 ,  G06F3/03547 ,  G06F2203/0339 ,  G06F2203/04808

摘要： Provide is a portable image display device which allows a user to perform many different operation inputs with ease. The portable image display device includes: a display screen having a substantially rectangular shape; and a plurality of touch sensors provided along at least two sides defining a circumference of the display screen, for each detecting a position touched by a finger of a user. The portable image display device changes an image displayed on the display screen in accordance with a combination of the positions of a plurality of the fingers which are respectively detected by the plurality of touch sensors.

摘要翻译： 提供是便携式图像显示装置，其允许用户轻松地执行许多不同的操作输入。 便携式图像显示装置包括：具有大致矩形形状的显示屏; 以及沿着限定显示屏的圆周的至少两侧设置的多个触摸传感器，用于每个触摸传感器检测用户的手指触摸的位置。 便携式图像显示装置根据由多个触摸传感器分别检测的多个手指的位置的组合来改变显示在显示屏幕上的图像。

公开(公告)号：US07821018B2

公开(公告)日：2010-10-26

申请号：US12279654

申请日：2007-02-16

申请人： Hiroshi Osawa ,  Takashi Hodota

发明人： Hiroshi Osawa ,  Takashi Hodota

IPC分类号： H01L29/201 ,  H01L21/00

CPC分类号： H01L24/32 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00015

摘要： A GaN-based semiconductor light-emitting device 1 includes a stacked body 10A having the component layers 12 that include an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer each formed of a GaN-based semiconductor, sequentially stacked and provided as an uppermost layer with a first bonding layer 14 made of metal and a second bonding layer 33 formed on an electroconductive substrate 31, adapted to have bonded to the first bonding layer 14 the surface thereof lying opposite the side on which the electroconductive substrate 31 is formed, made of a metal of the same crystal structure as the first bonding layer 14, and allowed to exhibit an identical crystal orientation in the perpendicular direction of the bonding surface and the in-plane direction of the bonding surface.

摘要翻译： GaN基半导体发光器件1包括层叠体10A，其具有包括由GaN基半导体形成的n型半导体层，发光层和p型半导体层的构成层12， 依次层叠并设置为具有由金属制成的第一接合层14和形成在导电基板31上的第二接合层33作为最上层，其适于与第一接合层14接合，其表面与 形成由与第一接合层14相同的晶体结构的金属制成的导电性基板31，并且在接合面的垂直方向和接合面的面内方向呈现相同的晶体取向。

公开(公告)号：US07803462B2

公开(公告)日：2010-09-28

申请号：US10498746

申请日：2003-10-14

申请人： Takehiro Takahashi ,  Michio Kaneko ,  Hiroshi Osawa ,  Hiroshi Kanai

发明人： Takehiro Takahashi ,  Michio Kaneko ,  Hiroshi Osawa ,  Hiroshi Kanai

IPC分类号： B32B9/00

CPC分类号： C23C26/00 ,  B32B17/061 ,  B32B17/10036 ,  B32B17/10788 ,  C03C27/00 ,  C03C27/08 ,  C23C8/80 ,  C23C28/00 ,  Y10T428/26

摘要： The titanium materials of the present invention have an oxide film on the surface and an interference color of the oxide film. In forming a transparent coating layer on the surface of the titanium materials, provisions are made so that the oxide film has an thickness of 150 nm to 600 nm, or the interference color due to the anodic oxide film is developed by the actions of both wavelengths strengthened and weakened by interference and the color phases of the color developed by the wavelength strengthened by interference and that of complementary colors of the color developed by the wavelength weakened by interference are as close to each as not more than 90 degrees apart on the color wheel, or the L* value on the L*a*b* calorimetric system is not less than 33. The laminated glasses of the present invention having excellent ornamentality comprise at least said titanium sheet interposed between multiple sheet glasses layered together by means of adhesive layers.

摘要翻译： 本发明的钛材料的表面具有氧化膜和氧化膜的干涉色。 在钛材料的表面上形成透明涂层时，要规定氧化膜的厚度为150nm〜600nm，或由于阳极氧化膜的干涉色由两波长的作用而发展 被干扰强化和削弱，由被干扰强化的波长所产生的颜色的颜色相和由被干涉减弱的波长产生的颜色的互补色的颜色相位在色轮上分别接近不超过90度 ，或L * a * b *量热系统的L *值不小于33.本发明具有优异装饰性的夹层玻璃至少包括介于通过粘合剂层层叠在一起的多片玻璃之间的钛片 。

公开(公告)号：US07786489B2

公开(公告)日：2010-08-31

申请号：US12066359

申请日：2006-09-07

申请人： Hiroshi Osawa ,  Takashi Hodota

发明人： Hiroshi Osawa ,  Takashi Hodota

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/40

摘要： The present invention provides a nitride semiconductor light emitting device, which comprises positive and negative electrodes with high adhesion, can output high power, and does not generate heat; specifically, the present invention provides a nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer.

摘要翻译： 本发明提供了一种氮化物半导体发光器件，其包括具有高粘合力的正极和负极，可输出高功率，不产生热量; 具体而言，本发明提供了一种氮化物半导体发光器件，其至少包括欧姆接触层，p型氮化物半导体层，氮化物半导体发光层和n型氮化物半导体层， 层，其中在欧姆接触层和板层之间形成板粘合层，并且板粘合层由包含50质量％以上的与合金中所含的合金的主要成分相同的成分的合金制成 板层。

公开(公告)号：US20100163886A1

公开(公告)日：2010-07-01

申请号：US12293680

申请日：2007-03-23

申请人： Naoki Fukunaga ,  Hiroshi Osawa

发明人： Naoki Fukunaga ,  Hiroshi Osawa

IPC分类号： H01L33/30 ,  H01L21/28 ,  H01L33/42

CPC分类号： H01L33/0095 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

摘要： The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrode 15 composed of a translucent conductive oxide film on a p-type GaN layer 14 of a gallium nitride compound semiconductor device; and a hydrogen annealing process of annealing the positive electrode 15 in a gas atmosphere including hydrogen (H2).

摘要翻译： 本发明提供了一种氮化镓化合物半导体发光器件，其防止由于氢退火引起的p型半导体层的电阻率的增加，并且降低了透光性导电氧化物膜的电阻率以降低驱动电压Vf， 其制造方法以及包括该灯的灯。 制造氮化镓系化合物半导体发光元件的方法包括：在氮化镓系化合物半导体器件的p型GaN层14上形成由透光性导电氧化物膜构成的正极15; 以及在包括氢（H 2）的气体气氛中退火正极15的氢退火工艺。

公开(公告)号：US20100052007A1

公开(公告)日：2010-03-04

申请号：US12199723

申请日：2008-08-27

申请人： Hiroshi OSAWA ,  Naoki FUKUNAGA ,  Hironao SHINOHARA

发明人： Hiroshi OSAWA ,  Naoki FUKUNAGA ,  Hironao SHINOHARA

IPC分类号： H01L33/00 ,  H01L21/02

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0091

摘要： The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

摘要翻译： 本发明提供一种发光器件，其包括依次层叠的n型半导体层，发光层，p型半导体层和氧化钛系导电膜层，其中，所述氧化钛系导电性 膜层包括作为光提取层的第一层和作为电流扩散层的第二层，第二层布置在第一层的p型半导体层侧，制造发光器件的方法和 一盏灯。

公开(公告)号：US20100051981A1

公开(公告)日：2010-03-04

申请号：US12199767

申请日：2008-08-27

申请人： Hiroshi OSAWA ,  Naoki FUKUNAGA ,  Hironao SHINOHARA

发明人： Hiroshi OSAWA ,  Naoki FUKUNAGA ,  Hironao SHINOHARA

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0091 ,  H01L2924/00014

摘要： There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, and a titanium oxide-based conductive film layer 15 laminated in this order, wherein a random concavo-convex surface 15 is formed on at least a part of the surface of the titanium oxide-based conductive film layer.

摘要翻译： 提供了具有优异的光提取效率和低波长不均匀性的半导体发光器件，其制造方法和灯。 半导体发光器件包括依次层叠的n型半导体层12，发光层13，p型半导体层14和氧化钛系导电膜层15， 凸面15形成在氧化钛系导电膜层的表面的至少一部分上。

公开(公告)号：US07550211B2

公开(公告)日：2009-06-23

申请号：US10582109

申请日：2005-08-09

申请人： Hiroshi Osawa ,  Shun Matsumoto ,  Daizo Endo

发明人： Hiroshi Osawa ,  Shun Matsumoto ,  Daizo Endo

IPC分类号： G11B5/66

CPC分类号： G11B5/7325 ,  G11B5/656

摘要： A magnetic recording medium includes an orientation adjusting layer, a nonmagnetic under layer, a nonmagnetic intermediate layer, a magnetic layer and a protective layer sequentially stacked on a nonmagnetic substrate provided on a first surface thereof with a texture streak and used for a magnetic disc. The nonmagnetic under layer contains at least a layer formed of a Cr—Mn-based alloy and possesses magnetic anisotropy having an axis of easy magnetization in a circumferential direction thereof. A magnetic recording and reproducing device includes the magnetic recording medium and a magnetic head for enabling information to be recorded in and reproduced from the magnetic recording medium.

摘要翻译： 磁记录介质包括顺序层叠在设置在其第一表面上的纹理条纹并用于磁盘的非磁性基板上的取向调整层，非磁性底层，非磁性中间层，磁性层和保护层。 非磁性底层至少包含由Cr-Mn基合金形成的层，并且具有在其圆周方向上具有易磁化轴的磁各向异性。 磁记录和再现装置包括磁记录介质和用于使信息能够被记录在磁记录介质中并从磁记录介质再现的磁头。