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    Vehicle location information-based abnormal driving determination and warning system
    5.
    发明授权
    Vehicle location information-based abnormal driving determination and warning system 有权
    车辆位置信息异常驾驶确定和警告系统

    公开(公告)号：US08711003B2

    公开(公告)日：2014-04-29

    申请号：US13323218

    申请日：2011-12-12

    Applicant: Tae Young Yu ,  Hyun Cheol Bae ,  Chung Hi Lee

    Inventor： Tae Young Yu ,  Hyun Cheol Bae ,  Chung Hi Lee

    IPC: G08G1/09

    CPC classification number: B60W40/09 ,  B60W2040/0827 ,  B60W2520/10 ,  B60W2520/105 ,  B60W2550/402 ,  G08B21/06 ,  G08B25/08

    Abstract: The disclosed system includes a first unit including at least one sensor. The first unit senses driving situations (characteristics) of a vehicle through the at least one sensor. Furthermore a second unit is configured to receive location-based information about the vehicle, and a control unit which includes an operation statistic unit calculates an acceptable range to be output by the first unit on a particular type of road based on the information detected by the sensing unit and the information received by the location second unit. The control unit also includes an abnormal driving determination unit which compares values sensed by the first unit with values calculated by the operation statistic unit to determine whether or not the vehicle is being driven in an abnormal state.

    Abstract translation: 所公开的系统包括包括至少一个传感器的第一单元。 第一单元通过至少一个传感器感测车辆的驾驶状况（特性）。 此外，第二单元被配置为接收关于车辆的基于位置的信息，并且包括操作统计单元的控制单元基于由特定类型的道路检测到的信息来计算由特定类型的道路上的第一单元输出的可接受范围 感测单元和由位置第二单元接收的信息。 控制单元还包括异常行驶确定单元，其将由第一单元感测的值与由操作统计单元计算的值进行比较，以确定车辆是否处于异常状态。

    COMMUNICATION ACCESS CONTROL SYSTEM OF VEHICLE
    6.
    发明申请
    COMMUNICATION ACCESS CONTROL SYSTEM OF VEHICLE 审中-公开
    车辆通信接入控制系统

    公开(公告)号：US20120005343A1

    公开(公告)日：2012-01-05

    申请号：US12953751

    申请日：2010-11-24

    Applicant: Sang Woo Ji ,  Hyun Cheol Bae ,  Hun Joung Yoon

    Inventor： Sang Woo Ji ,  Hyun Cheol Bae ,  Hun Joung Yoon

    IPC: G06F15/173

    CPC classification number: H04L69/18 ,  H04L67/12 ,  H04W4/021 ,  H04W4/029 ,  H04W4/46 ,  H04W48/04 ,  H04W48/18 ,  H04W74/00

    Abstract: A communication access control system of a vehicle that selectively operates one accessible module with a higher access priority in a current location of a first wireless communication module or a second wireless communication module receiving contents from a contents server in a wireless manner is provided. The communication access control system of a vehicle includes: a first wireless communication module and a second wireless communication module accessing a contents server to receive contents from the contents server in a wireless manner; and an access controller selectively operating one accessible module of the first wireless communication module or the second wireless communication module with a higher access priority in a current location of the vehicle.

    Abstract translation: 提供了一种车辆的通信接入控制系统，其选择性地操作在第一无线通信模块或第二无线通信模块的当前位置具有较高接入优先级的可访问模块，或者以无线方式从内容服务器接收内容。 车辆的通信接入控制系统包括：第一无线通信模块和第二无线通信模块，以无线方式从所述内容服务器接入内容服务器; 以及访问控制器，其选择性地操作所述第一无线通信模块或所述第二无线通信模块的一个可访问模块，所述第一无线通信模块或所述第二无线通信模块在所述车辆的当前位置具有较高的访问优先级。

    PACKAGE STRUCTURE
    8.
    发明申请
    PACKAGE STRUCTURE 审中-公开
    包装结构

    公开(公告)号：US20110090651A1

    公开(公告)日：2011-04-21

    申请号：US12765619

    申请日：2010-04-22

    Applicant: Sunghae Jung ,  Dong Suk Jun ,  Jong Tae Moon ,  Hyun-cheol Bae ,  Moo Jung Chu

    Inventor： Sunghae Jung ,  Dong Suk Jun ,  Jong Tae Moon ,  Hyun-cheol Bae ,  Moo Jung Chu

    IPC: H05K7/00

    CPC classification number: H03H9/0557 ,  H01L2224/48091 ,  H01L2924/1461 ,  H03H9/0514 ,  H03H9/1014 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Provided is a package structure. The package structure includes a first substrate, a first device, a second substrate, a first via contact, and at least one second device. The first device is formed on the first substrate. The second substrate has an air gap over the first substrate and covers the first device. The first via contact is connected to the first device through the second substrate. At least one second device is electrically connected to the first via contact, and is stacked on the second substrate.

    Abstract translation: 提供了一种封装结构。 封装结构包括第一衬底，第一器件，第二衬底，第一通孔触点和至少一个第二器件。 第一装置形成在第一基板上。 第二基板在第一基板上具有空隙并覆盖第一装置。 第一通孔接触件通过第二基板连接到第一器件。 至少一个第二装置电连接到第一通孔接触件，并且堆叠在第二基板上。

    Germanium semiconductor device and method of manufacturing the same
    9.
    发明授权
    Germanium semiconductor device and method of manufacturing the same 有权
    锗半导体器件及其制造方法

    公开(公告)号：US07550796B2

    公开(公告)日：2009-06-23

    申请号：US11947123

    申请日：2007-11-29

    Applicant: Sang Hun Kim ,  Hyun Cheol Bae ,  Sang Heung Lee

    Inventor： Sang Hun Kim ,  Hyun Cheol Bae ,  Sang Heung Lee

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/66613 ,  H01L21/223 ,  H01L21/28079 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78684

    Abstract: A germanium semiconductor device and a method of manufacturing the same are provided. The method includes the steps of: forming an isolation layer on a substrate using a shallow trench; forming a silicon-nitride layer on the substrate, and selectively etching the silicon nitride layer to expose source and drain regions; injecting impurities onto a surface of the substrate over the exposed source and drain regions using delta-doping to form a delta-doping layer; selectively growing a silicon germanium layer containing impurities on the delta-doping layer; rapidly annealing the substrate and forming source and drain regions by diffusion of the impurities; depositing an insulating layer on the entire surface of the substrate; etching the insulating layer and forming source and drain contact parts to be in contact with source and drain terminals; depositing metal over the insulating layer having the source and drain contact parts thereon and forming a metal silicide layer; and after forming the silicide layer, forming the source and drain terminals to be in contact with the silicide layer. Accordingly, the source and drain regions having a shallow junction depth may be ensured by forming the source and drain regions through annealing after delta-doping and selectively growing the silicon germanium layer containing high-concentration impurities. Also, the germanium silicide layer is stably formed by the silicon germanium layer grown in the source and drain regions, and thus contact resistance is lowered and driving current of the device is improved.

    Abstract translation: 提供锗半导体器件及其制造方法。 该方法包括以下步骤：使用浅沟槽在衬底上形成隔离层; 在衬底上形成氮化硅层，并选择性地蚀刻氮化硅层以暴露出源区和漏区; 使用增量掺杂在暴露的源极和漏极区域上在衬底的表面上注入杂质以形成δ-掺杂层; 在δ-掺杂层上选择性地生长含有杂质的硅锗层; 快速退火衬底并通过杂质扩散形成源区和漏区; 在基板的整个表面上沉积绝缘层; 蚀刻绝缘层并形成源极和漏极接触部分以与源极和漏极端子接触; 在其上具有源极和漏极接触部分的绝缘层上沉积金属并形成金属硅化物层; 并且在形成硅化物层之后，形成与硅化物层接触的源极和漏极端子。 因此，具有浅结深度的源极和漏极区域可以通过在增量掺杂之后退火形成源区和漏极区域并选择性地生长含有高浓度杂质的硅锗层来确保。 此外，通过在源极区和漏极区中生长的硅锗层稳定地形成硅化锗层，因此接触电阻降低，器件的驱动电流提高。

    GERMANIUM SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    GERMANIUM SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    德国半导体器件及其制造方法

    公开(公告)号：US20080135878A1

    公开(公告)日：2008-06-12

    申请号：US11947123

    申请日：2007-11-29

    Applicant: Sang Hun KIM ,  Hyun Cheol BAE ,  Sang Heung LEE

    Inventor： Sang Hun KIM ,  Hyun Cheol BAE ,  Sang Heung LEE

    IPC: H01L21/336 ,  H01L29/78

    CPC classification number: H01L29/66613 ,  H01L21/223 ,  H01L21/28079 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78684

    Abstract: A germanium semiconductor device and a method of manufacturing the same are provided. The method includes the steps of: forming an isolation layer on a substrate using a shallow trench; forming a silicon-nitride layer on the substrate, and selectively etching the silicon nitride layer to expose source and drain regions; injecting impurities onto a surface of the substrate over the exposed source and drain regions using delta-doping to form a delta-doping layer; selectively growing a silicon germanium layer containing impurities on the delta-doping layer; rapidly annealing the substrate and forming source and drain regions by diffusion of the impurities; depositing an insulating layer on the entire surface of the substrate; etching the insulating layer and forming source and drain contact parts to be in contact with source and drain terminals; depositing metal over the insulating layer having the source and drain contact parts thereon and forming a metal silicide layer; and after forming the silicide layer, forming the source and drain terminals to be in contact with the silicide layer. Accordingly, the source and drain regions having a shallow junction depth may be ensured by forming the source and drain regions through annealing after delta-doping and selectively growing the silicon germanium layer containing high-concentration impurities. Also, the germanium silicide layer is stably formed by the silicon germanium layer grown in the source and drain regions, and thus contact resistance is lowered and driving current of the device is improved.

    Abstract translation: 提供锗半导体器件及其制造方法。 该方法包括以下步骤：使用浅沟槽在衬底上形成隔离层; 在衬底上形成氮化硅层，并选择性地蚀刻氮化硅层以暴露出源区和漏区; 使用增量掺杂在暴露的源极和漏极区域上在衬底的表面上注入杂质以形成δ-掺杂层; 在δ-掺杂层上选择性地生长含有杂质的硅锗层; 快速退火衬底并通过杂质扩散形成源区和漏区; 在基板的整个表面上沉积绝缘层; 蚀刻绝缘层并形成源极和漏极接触部分以与源极和漏极端子接触; 在其上具有源极和漏极接触部分的绝缘层上沉积金属并形成金属硅化物层; 并且在形成硅化物层之后，形成与硅化物层接触的源极和漏极端子。 因此，具有浅结深度的源极和漏极区域可以通过在增量掺杂之后退火形成源区和漏极区域并选择性地生长含有高浓度杂质的硅锗层来确保。 此外，通过在源极区和漏极区中生长的硅锗层稳定地形成硅化锗层，因此接触电阻降低，器件的驱动电流提高。

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