公开(公告)号：US20100281576A1

公开(公告)日：2010-11-04

申请号：US12523780

申请日：2008-01-15

申请人： Ho Bang Kim ,  Sang Bong Choi

发明人： Ho Bang Kim ,  Sang Bong Choi

IPC分类号： A01H5/00 ,  C12N15/82 ,  C07K14/415 ,  C07H21/04 ,  C12N15/79

CPC分类号： C12N15/8251 ,  C12N9/0077 ,  C12N15/8261 ,  C12N15/8273 ,  Y02A40/146

摘要： The present invention relates to cytochrome P450 protein originating from Arabidopsis thaliana which can be used for increasing seed size or storage protein content in seed or for increasing water stress resistance of plant, a gene encoding said protein, a recombinant plant expression vector comprising said gene, a method of increasing seed size or storage protein content in seed and a method of increasing water stress resistance of plant by using said vector, plants produced by said method and transgenic seed of said plants. According to the present invention, by using cytochrome P450 gene of the present invention, seed size or storage protein content in seed can be increased or water stress resistance of plant can be increased.

摘要翻译： 本发明涉及源自拟南芥的细胞色素P450蛋白，其可用于增加种子中的种子大小或储存蛋白质含量或增加植物的水分胁迫性，编码所述蛋白质的基因，包含所述基因的重组植物表达载体， 增加种子中种子大小或储存蛋白质含量的方法，以及通过使用所述载体，通过所述方法产生的植物和所述植物的转基因种子来提高植物的水分胁迫性的方法。 根据本发明，通过使用本发明的细胞色素P450基因，可以提高种子的种子大小或储存蛋白质含量，或增加植物的耐水胁迫性。

公开(公告)号：US06366688B1

公开(公告)日：2002-04-02

申请号：US09162267

申请日：1998-09-29

申请人： Chung-sam Jun ,  Jeong-kon Kim ,  Sang-moon Chon ,  Sang-bong Choi

发明人： Chung-sam Jun ,  Jeong-kon Kim ,  Sang-moon Chon ,  Sang-bong Choi

IPC分类号： G06K900

CPC分类号： G01R31/2886 ,  H01J2237/2817

摘要： There is provided a contact failure inspection system and method for semiconductor devices and a method of manufacturing semiconductor devices. Using digitized values for electron signals detected using a scanning electron microscope, contacts can be inspected to identify failures such as non-open contact holes. The contact failure inspection is performed by comparing the electron signal value detected from a unit area including at least one contact hole with values representative of the electron signal corresponding to a normal contact.

摘要翻译： 提供了一种用于半导体器件的接触故障检测系统和方法以及半导体器件的制造方法。 使用扫描电子显微镜检测的电子信号的数字化值可以被检查以识别诸如非开放接触孔的故障。 通过将从包括至少一个接触孔的单位区域检测到的电子信号值与表示与正常接触相对应的电子信号的值进行比较来进行接触故障检查。

公开(公告)号：US06449037B2

公开(公告)日：2002-09-10

申请号：US09864398

申请日：2001-05-25

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： G01N2100

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

摘要翻译： 方法和装置检测在晶片表面存在缺陷，即微划痕。 光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。 由晶片表面反射的光被转换为电信号，但是由于表面散射的任何光被尽可能地排除，从而有助于信号的形成。 电信号对应于从晶片表面反射的光的强度。 当光在晶片上扫描时，将电信号的值进行比较，以确定介质中是否存在缺陷。 因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射，所以可以成功监测晶片是否存在这种微划痕。 特别地，可以检测到在介质中形成的微划痕的缺陷，而不管诸如图案层的介质之下的结构如何。

公开(公告)号：US06440760B1

公开(公告)日：2002-08-27

申请号：US09663644

申请日：2000-09-18

申请人： Hyung-suk Cho ,  Sang-mun Chon ,  Sang-bong Choi ,  Chung-sam Chun ,  Min-sub Kang

发明人： Hyung-suk Cho ,  Sang-mun Chon ,  Sang-bong Choi ,  Chung-sam Chun ,  Min-sub Kang

IPC分类号： G01R3126

CPC分类号： G01N21/55

摘要： Embodiments of the present invention include methods for measuring a semiconductor wafer which has been subjected to an etching process. Light is radiated at the semiconductor wafer. Light within a selected wavelength band reflected from the semiconductor wafer is measured to provide an output value. A ratio of the output value and a reference value is determined. The reference value may be based on light within the selected wavelength band reflected from a reference surface, such as a bare silicon reference surface. It is determined that the semiconductor wafer is under-etched if the determined ratio does not meet the reference value. A normalized optical impedance or a polarization ratio may be measured based on light within a selected wave length band reflected from the semiconductor wafer to provide the output value in various embodiments of the present invention. In further aspects of the present invention, a thickness of a remaining oxide layer is determined using an under-etch recipe when it is determined that a semiconductor wafer is under-etched and a thickness of a damaged/polymer layer may be determined using an over-etch recipe when it is determined that the semiconductor wafer is over-etched.

摘要翻译： 本发明的实施例包括用于测量经过蚀刻处理的半导体晶片的方法。 光在半导体晶片上被辐射。 测量从半导体晶片反射的选定波长带内的光以提供输出值。 确定输出值和参考值的比率。 参考值可以基于从诸如裸硅参考表面的参考表面反射的所选波长带内的光。 如果确定的比率不符合参考值，则确定半导体晶片被蚀刻。 可以基于从半导体晶片反射的所选波长带内的光来测量归一化的光阻抗或偏振比，以在本发明的各种实施例中提供输出值。 在本发明的另外的方面，当确定半导体晶片被低蚀刻并且可以使用过度蚀刻确定损坏/聚合物层的厚度时，使用蚀刻下配方确定剩余氧化物层的厚度 当确定半导体晶片被过蚀刻时，读取配方。

公开(公告)号：US06528333B1

公开(公告)日：2003-03-04

申请号：US09584671

申请日：2000-06-01

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： H01L2166

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

公开(公告)号：US06515293B1

公开(公告)日：2003-02-04

申请号：US09671207

申请日：2000-09-28

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

IPC分类号： G01N2186

CPC分类号： H01L22/26 ,  G01B11/0625 ,  H01L22/12

摘要： A method of measuring the thickness of a thin layer, by which the thickness of a top layer formed on the surface of a wafer can be detected in real time, and an apparatus therefor. This method includes irradiating light onto a cell and obtaining luminance from reflected light, detecting the thickness of a thin layer in an oxide site which is adjacent to the cell, repeating the irradiating and detecting steps to obtain a plurality of luminance values from cells formed on the wafer and a plurality of thickness values of thin layers in oxide sites that are adjacent to the cells, and employing a thickness calculation formula for calculating the thickness of a top layer using the plurality of luminance values and plurality of thickness values obtained in the prior steps. The thickness of a thin layer is directly detected from the luminance of light reflected by the cell, so that it can be precisely detected in a non-destructive manner, thus making it possible to detect the thickness of a thin layer in real time during the manufacture of a semiconductor device.

摘要翻译： 测量薄层厚度的方法，通过该厚度可以实时检测在晶片表面上形成的顶层的厚度及其装置。 该方法包括将光照射到电池上并从反射光获得亮度，检测与电池相邻的氧化物部位中的薄层的厚度，重复照射和检测步骤，从而形成多个亮度值 所述晶片和与所述单元相邻的氧化物部位中的薄层的多个厚度值，并且使用使用所述多个亮度值和在先前获得的多个厚度值来计算顶层的厚度的厚度计算公式 脚步。 从单元反射的光的亮度直接检测薄层的厚度，从而可以以非破坏性的方式精确地检测薄层的厚度，从而使得可以实时地检测薄层的厚度 制造半导体器件。

公开(公告)号：US5692954A

公开(公告)日：1997-12-02

申请号：US434005

申请日：1995-05-03

申请人： Joung Sun Lee ,  Je Ku Park ,  Je Kang Jun ,  Sang Bong Choi

发明人： Joung Sun Lee ,  Je Ku Park ,  Je Kang Jun ,  Sang Bong Choi

IPC分类号： F24F7/06 ,  B01D46/00 ,  B08B5/02 ,  F24F3/16

CPC分类号： F24F3/161 ,  B08B5/02

摘要： An air shower system which includes an air shower room, an underground region in fluid communication with a clean room, an air supply chamber surrounding the sidewalls and ceiling of the air shower room, the air supply chamber having an intake portion in fluid communication with the underground region, a plurality of air supply nozzles provided in the sidewalls and ceiling of the air shower room, a plurality of air discharge holes provided in the floor of the air shower room, the air discharge holes being in fluid communication with the underground region, a plurality of filters provided in side portions of the air supply chamber disposed alongside the sidewalls of the air shower room, and, a plurality of blowers provided in the side portions of the air supply chamber for forcing air from the underground region through the filters and thence, through the air supply nozzles, into the interior of the air shower room, for blowing particulate matter off of a person situated in the interior of the shower room, the air containing the particulate matter being discharged through the air discharge holes into the underground region.

摘要翻译： 一种空气淋浴系统，包括空气淋浴房，与洁净室流体连通的地下区域，围绕所述空气淋浴房的侧壁和天花板的供气室，所述空气供应室具有与所述空气淋浴室流体连通的进气部分 地下区域，设置在空气淋浴房的侧壁和天花板中的多个供气喷嘴，设置在空气淋浴房的地板中的多个排气孔，排气孔与地下区域流体连通， 设置在沿着空气淋浴房的侧壁配置的供气室的侧部的多个过滤器，以及设置在供气室的侧部的多个鼓风机，用于迫使来自地下区域的空气通过过滤器， 然后通过供气喷嘴进入空气淋浴房的内部，从位于内部的人员吹出颗粒物质 淋浴室内的空气通过排气孔排出到地下区域。

公开(公告)号：US08153862B2

公开(公告)日：2012-04-10

申请号：US12523780

申请日：2008-01-15

申请人： Ho Bang Kim ,  Sang Bong Choi

发明人： Ho Bang Kim ,  Sang Bong Choi

IPC分类号： A01H5/00 ,  A01H5/10 ,  C12N15/82

CPC分类号： C12N15/8251 ,  C12N9/0077 ,  C12N15/8261 ,  C12N15/8273 ,  Y02A40/146

摘要： The present invention relates to cytochrome P450 protein originating from Arabidopsis thaliana which can be used for increasing seed size or storage protein content in seed or for increasing water stress resistance of plant, a gene encoding said protein, a recombinant plant expression vector comprising said gene, a method of increasing seed size or storage protein content in seed and a method of increasing water stress resistance of plant by using said vector, plants produced by said method and transgenic seed of said plants. According to the present invention, by using cytochrome P450 gene of the present invention, seed size or storage protein content in seed can be increased or water stress resistance of plant can be increased.

摘要翻译： 本发明涉及源自拟南芥的细胞色素P450蛋白，其可用于增加种子中的种子大小或储存蛋白质含量或增加植物的水分胁迫性，编码所述蛋白质的基因，包含所述基因的重组植物表达载体， 增加种子中种子大小或储存蛋白质含量的方法，以及通过使用所述载体，通过所述方法产生的植物和所述植物的转基因种子来提高植物的水分胁迫性的方法。 根据本发明，通过使用本发明的细胞色素P450基因，可以提高种子的种子大小或储存蛋白质含量，或增加植物的耐水胁迫性。

公开(公告)号：US07027638B2

公开(公告)日：2006-04-11

申请号：US09949111

申请日：2001-09-07

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Hyoung-jin Kim ,  Dong-chun Lee ,  Sang-bong Choi ,  Sung-gon Ryu

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Hyoung-jin Kim ,  Dong-chun Lee ,  Sang-bong Choi ,  Sung-gon Ryu

IPC分类号： G06K9/00

CPC分类号： G06T5/008 ,  G06T7/90 ,  G06T2207/20021 ,  G06T2207/30148

摘要： A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.

公开(公告)号：US06870948B2

公开(公告)日：2005-03-22

申请号：US09977238

申请日：2001-10-16

申请人： Chung-sam Jun ,  Sang-Mun Chon ,  Sang-Bong Choi ,  Kye-Weon Kim ,  Sang-Hoon Lee ,  Yu-Sin Yang ,  Sang-Min Kim ,  Sang-Kil Lee

发明人： Chung-sam Jun ,  Sang-Mun Chon ,  Sang-Bong Choi ,  Kye-Weon Kim ,  Sang-Hoon Lee ,  Yu-Sin Yang ,  Sang-Min Kim ,  Sang-Kil Lee

IPC分类号： G01B15/00 ,  G01B15/08 ,  G01N15/00 ,  G01N15/14 ,  G01N23/20 ,  G01N23/225 ,  G06T1/00 ,  G06T7/00 ,  H01L21/66 ,  G06K9/00 ,  H01L21/8242

CPC分类号： G06T7/0004 ,  G01N15/1475 ,  G01N2015/0092 ,  G06T2207/30148 ,  H01J2237/2815

摘要： A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images. After comparing standardized image data values of the respective pixels with a predetermined threshold value, the number of pixels whose standardized image data value is greater than the threshold value is counted. The growth degree of grains on the surface of the wafer is calculated by numerating a ratio of the counted number with respect to a total number of the pixels contained within the analysis target image.

摘要翻译： 一种用于数值分析生长在半导体晶片的表面上的晶粒的生长度的方法和装置，其中通过使用由半导体晶片的表面扫描的半导体晶片的表面的图像文件自动计算和计算晶粒的生长度 SEM。 使用SEM扫描晶片的表面的预定部分，并将扫描的SEM图像同时存储到数据库中。 自动数值程序将网格应用于分析屏幕框架，并在测量图像上选择分析区域。 此后，使用相邻像素的图像数据的平均值对由网格指定的各个像素执行用于减少噪声的影响的平滑处理。 然后基于相应的图像执行标准化处理，以便去除所测量的图像之间的亮度差异。 在将各像素的标准化图像数据值与预定阈值进行比较之后，对标准化图像数据值大于阈值的像素数进行计数。 通过对计数的数量相对于分析对象图像中包含的像素的总数的比率进行计算来计算晶片表面上的晶粒的生长度。