公开(公告)号：US06765939B2

公开(公告)日：2004-07-20

申请号：US10198528

申请日：2002-07-18

申请人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

发明人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

IPC分类号： H01S510

CPC分类号： H01S3/1303 ,  H01S3/131 ,  H01S3/1392 ,  H01S5/0687

摘要： A monitored laser system has a laser having a first mirror; an exit mirror, at least a portion of a laser cavity defined by the first mirror and the exit mirror; and an active region located in the laser cavity, the active region containing a material that is capable of stimulated emission at one or more wavelengths of laser light within a tuning range of the laser. A multiple reflectivity band reflector (MRBR) is coupled to at least a portion of laser light emitted from the laser and transmits filtered laser light. The MRBR has a plurality of layers of material arranged in parallel such that the reflector has a plurality of reflectivity peaks within the tuning range, each reflectivity peak separated from neighboring reflectivity peak by a reflectivity trough having a trough minimum, said reflectivity peaks characterized by a peak profile and said trough minima between said reflectivity peaks characterized by a trough profile. At least one of the peak and trough profiles has a substantially non-constant relationship of wavelength to reflectivity. A first photodiode coupled to at least a portion of the filtered laser light produces an output based on the amount of light received. The emitted wavelength of the laser is adjusted toward a desired wavelength within the tuning range based at least in part on the output of the first photodiode.

摘要翻译： 所监视的激光系统具有具有第一反射镜的激光器; 出射镜，由第一反射镜和出射镜限定的激光腔的至少一部分; 以及位于所述激光腔中的有源区域，所述有源区域包含能够在所述激光器的调谐范围内的激光的一个或多个波长处受激发射的材料。 多反射带式反射器（MRBR）耦合到从激光器发射的激光的至少一部分并透射滤波的激光。 MRBR具有平行布置的多层材料，使得反射器在调谐范围内具有多个反射率峰值，每个反射率峰值与相邻反射率峰值分离具有波谷最小值的反射率波谷，所述反射率峰值以 在所述反射率峰值之间的峰值曲线和所述的谷值最小值，其特征在于波谷曲线。 峰值和谷值曲线中的至少一个具有波长与反射率之间基本上不恒定的关系。 耦合到滤波的激光的至少一部分的第一光电二极管基于所接收的光量产生输出。 至少部分地基于第一光电二极管的输出，在调谐范围内将激光的发射波长调节到期望的波长。

公开(公告)号：US06611543B2

公开(公告)日：2003-08-26

申请号：US10002994

申请日：2001-11-30

申请人： Wen-Yen Hwang

发明人： Wen-Yen Hwang

IPC分类号： H01S319

CPC分类号： H01S5/18375 ,  H01S5/0217 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18377 ,  H01S5/1838

摘要： A vertical-cavity surface-emitting laser (VCSEL) structure has a semiconductor bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal mirror layer interposed between the bottom DBR and the substrate, wherein the metal mirror layer and bottom DBR are adapted to form a first mirror of the laser structure; and a reaction barrier layer interposed between the metal mirror layer and the bottom DBR, wherein the reaction barrier layer is adapted to reduce reaction between the metal mirror layer and the bottom DBR. A phase matching layer is interposed between the reaction barrier layer and the bottom DBR to adjust the phase of radiation reflected by the metal mirror layer such that an increased overall reflectance is obtained. The VCSEL is fabricated by bonding a first metal bonding layer formed over the bottom DBR and a metal mirror layer on a first substrate to a second metal bonding layer formed on a second substrate.

公开(公告)号：US20130223844A1

公开(公告)日：2013-08-29

申请号：US13595505

申请日：2012-08-27

申请人： Wen-Yen Hwang

发明人： Wen-Yen Hwang

IPC分类号： H04B10/572 ,  H01S5/14

CPC分类号： H04B10/572 ,  H01S3/1055 ,  H01S5/0268 ,  H01S5/0612 ,  H01S5/141 ,  H01S5/146 ,  H01S5/4062 ,  H04B10/503 ,  H04B10/506 ,  H04J14/02 ,  H04J14/0246 ,  H04J14/025 ,  H04J14/0282 ,  H04J2014/0253

摘要： An external cavity laser array system may be used in a WDM optical system, such as a WDM-PON, for transmitting optical signals at multiple channel wavelengths. The system generally includes a plurality of laser emitters (e.g., gain chips) optically coupled to and separated from respective exit reflectors (e.g., tunable narrow-band reflectors), thereby forming an array of external cavity lasers with extended lasing cavities. The exit reflectors may be distributed Bragg reflectors (DBRs) located in the waveguides in an arrayed waveguide grating (AWG). The laser emitters emit a range of wavelengths including multiple channel wavelengths and the DBRs reflect a subset of channel wavelengths including at least a channel wavelength associated with the laser emitter such that lasing occurs at the subset of channel wavelengths. The AWG then filters the emitted laser light at the associated channel wavelengths.

摘要翻译： 在诸如WDM-PON的WDM光学系统中可以使用外腔激光器阵列系统，用于在多个信道波长处发送光信号。 该系统通常包括多个激光发射器（例如，增益芯片），其光耦合到相应出口反射器（例如可调窄带反射器）并与其分离，从而形成具有延伸激光腔的外腔激光器阵列。 出射反射器可以是位于阵列波导光栅（AWG）中的波导中的分布式布拉格反射器（DBR）。 激光发射器发射包括多个信道波长的波长范围，并且DBR反射信道波长的子集，其包括至少与激光发射器相关联的信道波长，使得激光发生在信道波长的子集处。 然后，AWG对相关信道波长的发射激光进行滤波。

公开(公告)号：US06795478B2

公开(公告)日：2004-09-21

申请号：US10109288

申请日：2002-03-28

申请人： Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Jun Zheng

发明人： Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Jun Zheng

IPC分类号： H01S308

CPC分类号： H01S5/18358 ,  H01S5/1833 ,  H01S5/18338 ,  H01S5/18369 ,  H01S5/205 ,  H01S2301/166

摘要： A surface-emitting laser, such as a VCSEL, for generating single-transverse mode laser light at a lasing wavelength, has a first mirror and a second mirror positioned so as to define a laser cavity therebetween, and a semiconductor active region disposed between the first and second mirrors for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength. An annular antiguide structure is disposed within the laser cavity and between the active region and one of the first and second mirrors, the annular antiguide structure comprising an antiguide material and having a central opening, the central opening comprising a second material having an index of refraction for light at the lasing wavelength smaller than that of the antiguide material, whereby the annular antiguide structure causes preferential antiguiding of higher order transverse lasing modes in the laser cavity.

摘要翻译： 用于产生激光波长的单横模式激光的诸如VCSEL的表面发射激光器具有定位成在其间限定激光腔的第一反射镜和第二反射镜，以及位于 第一和第二镜，用于通过受激发射在激光波长处放大激光腔中的光。 环形防水结构设置在激光腔内并且在有源区域与第一和第二反射镜之一之间，环形防水结构包括防护材料并具有中心开口，中心开口包括具有折射率的第二材料 对于激光波长小于抗蚀剂材料的波长的光，由此环形抗蚀剂结构在激光腔中引起较高阶横向激光模式的优先防御。

公开(公告)号：US06763046B2

公开(公告)日：2004-07-13

申请号：US10029008

申请日：2001-12-20

申请人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

发明人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Chih-Hsiang Lin

IPC分类号： H01S510

CPC分类号： H01S3/1303 ,  H01S3/131 ,  H01S3/1392 ,  H01S5/0687

摘要： A monitored laser system includes a laser with a first mirror and an exit mirror. The laser also has a laser cavity defined at least in part by the first mirror and the exit mirror. Within the laser cavity is an active region that contains material that is capable of stimulated emission at one or more wavelengths such that laser light is emitted from the laser. A power source is coupled to the active region. A multiple reflectivity band reflector (MRBR) is coupled to at least a portion of the emitted laser light. The MRBR has at least first and second wavelength bands with reflectivity above a particular reflectivity separated by at least a third wavelength band having reflectivity below the particular reflectivity. A first photodiode is coupled to at least a portion of the filtered laser light and produces an output based on the amount and wavelength of light received. A means for adjusting the emitted wavelength of the laser toward a particular wavelength in one of the at least first, second, and third wavelength bands based at least in part on the output of the first photodiode.

摘要翻译： 被监视的激光系统包括具有第一反射镜和出射镜的激光器。 激光器还具有至少部分地由第一反射镜和出射镜限定的激光腔。 在激光腔内是包含能够在一个或多个波长处被激发的材料的激活区域，使得激光从激光器发射。 电源耦合到有源区。 多反射带反射器（MRBR）耦合到所发射的激光的至少一部分。 MRBR具有至少第一和第二波长带，其具有高于具有低于特定反射率的反射率的至少第三波长带隔开的特定反射率的反射率。 第一光电二极管被耦合到滤波的激光的至少一部分，并且基于所接收的光的量和波长产生输出。 用于至少部分地基于第一光电二极管的输出，将至少第一，第二和第三波长带中的一个波长的激光发射波长调整到特定波长的装置。

公开(公告)号：US06697413B2

公开(公告)日：2004-02-24

申请号：US10000672

申请日：2001-10-31

申请人： Wen-Yen Hwang ,  Chih-Hsiang Lin ,  Jun Zheng ,  James N. Baillargeon

发明人： Wen-Yen Hwang ,  Chih-Hsiang Lin ,  Jun Zheng ,  James N. Baillargeon

IPC分类号： H01S5187

CPC分类号： H01S5/18341 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/06206 ,  H01S5/18302 ,  H01S5/18369 ,  H01S5/3095

摘要： An embodiment of a surface-emitting laser structure includes a first semiconductor region of a first conductivity type coupled to a first contact and a second semiconductor region of the same conductivity type coupled to a second contact. A third semiconductor region of the opposite conductivity type is coupled to a third contact and interposed between the first and second semiconductor regions. An active region is interposed between the first and third regions. In a further embodiment, the laser structure may include a variable refractive index structure interposed between the second and third semiconductor regions. In another embodiment, a surface-emitting laser structure may include an active region between a first semiconductor region of a first conductivity type coupled to a first contact, and a second As semiconductor region of opposite conductivity type coupled to a second contact. A third electrical contact is dielectrically spaced from the second semiconductor region.

摘要翻译： 表面发射激光器结构的实施例包括耦合到第一触点的第一导电类型的第一半导体区域和与第二触点耦合的相同导电类型的第二半导体区域。 具有相反导电类型的第三半导体区域耦合到第三接触并插入在第一和第二半导体区域之间。 有源区域介于第一和第三区域之间。 在另一实施例中，激光器结构可以包括插入在第二和第三半导体区域之间的可变折射率结构。 在另一个实施例中，表面发射激光器结构可以包括耦合到第一触点的第一导电类型的第一半导体区域和耦合到第二触点的相反导电类型的第二As半导体区域之间的有源区。 第三电接触件与第二半导体区域介电地间隔开。

公开(公告)号：US06636544B2

公开(公告)日：2003-10-21

申请号：US09951299

申请日：2001-09-11

申请人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Jun Zheng

发明人： James N. Baillargeon ,  Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Jun Zheng

IPC分类号： H01S5026

CPC分类号： H01S5/18358 ,  H01L33/105 ,  H01S5/18369 ,  H01S5/18391 ,  H01S5/4087 ,  H01S5/423

摘要： A device is provided, the device comprising a first vertical cavity surface-emitting laser (VCSEL) of a monolithic vertical cavity surface-emitting laser (VCSEL) array, the first vertical cavity surface-emitting laser (VCSEL) being tunable to a first plurality of wavelengths. The device also comprises a second vertical cavity surface-emitting laser (VCSEL) of the monolithic vertical cavity surface-emitting laser (VCSEL) array, the second vertical cavity surface-emitting laser (VCSEL) being tunable to a second plurality of wavelengths, wherein at least one wavelength is in both the first plurality of wavelengths and the second plurality of wavelengths.

公开(公告)号：US06608855B1

公开(公告)日：2003-08-19

申请号：US10159347

申请日：2002-05-31

申请人： Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Jun Zheng

发明人： Wen-Yen Hwang ,  Klaus Alexander Anselm ,  Jun Zheng

IPC分类号： H01S308

CPC分类号： H01S5/12 ,  H01S5/1203 ,  H01S5/124

摘要： An edge-emitting laser for generating single-longitudinal mode laser light at a lasing wavelength. A semiconductor active region amplifies, by stimulated emission, light in the laser cavity at the lasing wavelength. A first grating section adjacent to the active region and having a first reflectance and a first effective index of refraction. A second grating section adjacent to the active region and having a second reflectance and the first effective index of refraction. The first and second grating sections have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section is disposed adjacent to the active region and between the first and second grating sections and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve single-longitudinal mode operation.

摘要翻译： 用于产生激光波长的单纵模式激光的边缘发射激光器。 半导体有源区通过受激发射以激光波长放大激光腔中的光。 与有源区相邻并具有第一反射率和第一有效折射率的第一光栅区段。 与激活区域相邻并且具有第二反射率和第一有效折射率的第二光栅区段。 第一和第二光栅部分具有基本上等于激光波长的布拉格波长。 无栅相移部分设置在有源区域附近并且在第一和第二光栅部分之间并且具有不同于第一折射率的第二折射率和足以赋予激光波长的光的相移的长度 足以实现单纵模操作。

公开(公告)号：US06406795B1

公开(公告)日：2002-06-18

申请号：US09426273

申请日：1999-10-25

申请人： Wen-Yen Hwang ,  Yucai Zhou ,  Zuhua Zhu ,  Yu-Hwa Lo

发明人： Wen-Yen Hwang ,  Yucai Zhou ,  Zuhua Zhu ,  Yu-Hwa Lo

IPC分类号： B32B1504

CPC分类号： H01L27/14632 ,  B82Y20/00 ,  H01L21/76256 ,  H01L29/205 ,  H01L31/02162 ,  H01L31/035236 ,  H01L31/09 ,  H01L33/0079 ,  H01S5/0206 ,  H01S5/3402 ,  Y10T428/12528 ,  Y10T428/31678

摘要： A compliant substrate for the formation of semiconductor devices includes a crystalline base layer and a thin-film crystalline layer on and loosely bonded to the base layers. The thin-film layer has a high degree of lattice flexibility. A compliant substrate for formation of semiconductor devices may also include a crystalline base layer, and, on the base layer, a thin film layer having a lattice constant different from the lattice constant of the base layer. A method for formation of a compliant substrate for formation of semiconductor devices includes forming a thin film layer on a first substrate, bonding a first surface of the thin film layer to a surface of a second substrate having a lattice constant different from the lattice constant of the thin film layer either with or without twist bonding, and removing the first substrate to expose a second surface of the thin film layer.

摘要翻译： 用于形成半导体器件的柔性衬底包括晶体基底层和薄膜结晶层，并且松散地结合到基底层。 薄膜层具有高度的晶格柔性。 用于形成半导体器件的兼容衬底还可以包括晶体基底层，并且在基底层上具有不同于基底层的晶格常数的晶格常数的薄膜层。 用于形成用于形成半导体器件的柔性衬底的方法包括在第一衬底上形成薄膜层，将薄膜层的第一表面粘合到具有不同于晶格常数的晶格常数的第二衬底的表面 所述薄膜层具有或不具有扭曲结合，以及移除所述第一基板以暴露所述薄膜层的第二表面。

公开(公告)号：US6110438A

公开(公告)日：2000-08-29

申请号：US270883

申请日：1999-03-17

申请人： James Nelson Baillargeon ,  Keh-Yeng Cheng ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Wen-Yen Hwang

发明人： James Nelson Baillargeon ,  Keh-Yeng Cheng ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Wen-Yen Hwang

IPC分类号： B01J3/00 ,  C01B25/01 ,  B01J3/03

CPC分类号： B01J3/006 ,  C01B25/01 ,  B01J2219/00132

摘要： The specification describes a method for producing black phosphorus from red phosphorus by thermally cycling red phosphorus in a vacuum between 360-400.degree. C. and 200-240.degree. C., whereupon the red phosphorous undergoes an allotropic phase change to black phosphorus.

摘要翻译： 该说明书描述了一种通过在360-400℃和200-240℃之间的真空中热循环红磷来从红磷生产黑磷的方法，于是红磷经历相对于黑磷的同素异形相变。