利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

47 条记录 (耗时 0.029 秒)

    Process for selective area growth of III-V semiconductors
    2.
    发明授权
    Process for selective area growth of III-V semiconductors 有权
    III-V半导体选择性面积生长工艺

    公开(公告)号：US06180429B2

    公开(公告)日：2001-01-30

    申请号：US09198111

    申请日：1998-11-23

    申请人： Klaus Alexander Anselm ,  James Nelson Baillargeon ,  Alfred Yi Cho ,  Wen-Yen Hwang

    发明人： Klaus Alexander Anselm ,  James Nelson Baillargeon ,  Alfred Yi Cho ,  Wen-Yen Hwang

    IPC分类号： H01L2100

    CPC分类号： H01L21/0332 ,  H01L21/0331 ,  H01L21/0337 ,  H01S5/2206 ,  H01S5/2275

    摘要： The specification describes a lift-off technique useful in the manufacture of III-V semiconductor devices such as MQW lasers. The lift-off step is improved by a spacer layer of III-V semiconductor that can be non-selectively etched to form a mesa stripe, and selectively etched for the lift-off step. The spacer layer allows the etch mask to be dimensionally adjusted to reduce or eliminate overhang of the mesa, and prevent adverse shadowing effects. MBE is effective for both growing the multilayer stack and regrowing the blocking layer. A self-aligned mask on the multilayer stack can be produced by removing the overhang, and facilitating lift-off by producing an undercut in the III-V spacer layer using selective etching.

    摘要翻译： 本说明书描述了用于制造诸如MQW激光器的III-V半导体器件的剥离技术。 通过可以非选择性蚀刻以形成台面条状物的III-V半导体间隔层来提高剥离步骤，并且选择性地蚀刻用于剥离步骤。 间隔层允许尺寸调节蚀刻掩模以减小或消除台面的突出，并且防止不利的阴影效应。 MBE对于生长多层堆叠并重新生长阻挡层是有效的。 可以通过去除突出端而产生多层堆叠上的自对准掩模，并且通过使用选择性蚀刻在III-V间隔层中产生底切来促进剥离。

    Intersubband light source with separate electron injector and reflector/extractor
    4.
    发明授权
    Intersubband light source with separate electron injector and reflector/extractor 有权
    带有独立电子注入器和反射器/提取器的带内光源

    公开(公告)号：US06324199B1

    公开(公告)日：2001-11-27

    申请号：US09195260

    申请日：1998-11-18

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： An intersubband semiconductor light source comprises a core region that includes a unipolar, radiative transition (RT) region having upper and lower energy levels, an injector-only (I) region disposed on one side of the RT region, and a reflector/extractor-only (R/E) region disposed on the other side of the RT region. The I region has a first miniband of energy levels aligned so as to inject electrons into the upper energy level, and the R/E region has a second miniband of energy levels aligned so as to extract electrons from the lower energy level. The R/E region also has a minigap aligned so as to inhibit the extraction of electrons from the upper level. A suitable voltage applied across the core region is effective to cause the RT region to generate light at a wavelength determined by the energy difference between the upper and lower energy levels. Low voltage operation at less than 3 V is described.

    摘要翻译： 子带间半导体光源包括芯区域，其包括具有上和下能级的单极辐射跃迁（RT）区域，设置在RT区域的一侧上的仅注射器（I）区域，以及反射器/ （R / E）区域设置在RT区域的另一侧。 I区具有对准能量水平的第一小能级以将电子注入到上能量级中，并且R / E区具有对准的能级的第二小容纳，从而从较低的能级提取电子。 R / E区域也具有微小的栅极排列，从而抑制从上层提取电子。 在芯区域上施加的合适电压有效地使得RT区域产生由上和下能量级之间的能量差确定的波长的光。 描述低于3V的低电压操作。

    Article comprising a strain-compensated QC laser
    5.
    发明授权
    Article comprising a strain-compensated QC laser 失效
    文章包括应变补偿QC激光

    公开(公告)号：US6023482A

    公开(公告)日：2000-02-08

    申请号：US12300

    申请日：1998-01-23

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Jerome Faist ,  Albert Lee Hutchinson ,  Deborah Lee Sivco

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Jerome Faist ,  Albert Lee Hutchinson ,  Deborah Lee Sivco

    IPC分类号： H01S5/00 ,  H01S5/06 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3402 ,  H01S5/0612 ,  H01S5/12 ,  H01S5/3403 ,  H01S5/3406

    摘要： A quantum cascade (QC) laser has a multilayer core region comprising alternating layers of a first and a second semiconductor material, with lattice constants a.sub.1 and a.sub.2, respectively. The first material is selected such that a.sub.1 >a.sub.0, where a, is the lattice constant of the substrate (typically InP), and the second material is selected such that a.sub.2 >a.sub.0. The materials are also selected such that the conduction band discontinuity .DELTA.E.sub.c between the first and second materials is greater than 520 meV in absolute value. The multilayer core comprises a multiplicity of essentially identical multilayer repeat units. The layer thicknesses and materials of the repeat units are selected to substantially provide strain compensation over a repeat unit. QC lasers according to this invention preferably comprise a distributed feedback feature, (e.g., a Bragg grating) selected to ensure single mode laser emission, and can be designed for operation at a wavelength in the first atmospheric window, typically about 3-5 .mu.m. Such lasers can advantageously be used for absorption spectroscopy, e.g., for emission monitoring.

    摘要翻译： 量子级联（QC）激光器具有包括第一和第二半导体材料的交替层的多层芯区域，分别具有晶格常数a1和a2。 选择第一材料使得a1> a0，其中a是衬底的晶格常数（通常为InP），并且选择第二材料使得a2> a0。 这些材料也被选择成使得第一和第二材料之间的导带不连续性DELTA Ec绝对值大于520meV。 多层芯包括多个基本相同的多层重复单元。 选择重复单元的层厚度和材料以在重复单元上基本上提供应变补偿。 根据本发明的QC激光器优选地包括被选择用于确保单模激光发射的分布反馈特征（例如，布拉格光栅），并且可以设计成在第一大气窗口中的波长下操作，通常为约3-5μm 。 这种激光器可以有利地用于吸收光谱，例如用于发射监测。

    Selective growth process for group III-nitride-based semiconductors
    7.
    发明授权
    Selective growth process for group III-nitride-based semiconductors 有权
    第III族氮化物基半导体的选择性生长工艺

    公开(公告)号：US06265322B1

    公开(公告)日：2001-07-24

    申请号：US09399655

    申请日：1999-09-21

    申请人： Klaus Alexander Anselm ,  Alfred Yi Cho ,  Sung-Nee George Chu

    发明人： Klaus Alexander Anselm ,  Alfred Yi Cho ,  Sung-Nee George Chu

    IPC分类号： H01L21302

    CPC分类号： H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/3185

    摘要： A method of forming selected Group III-nitride regions uses a masking layer to cause differential growth between single crystal Group III-nitride material and polycrystalline Group III-nitride material. The epitaxial process is chosen to provide vertical growth so as to allow for replication of the mask edges at the defined limits for the selected regions. By using an etchant that is selective between polycrystalline and single crystal Group III-nitride material, the polycrystalline material (that grew over the mask layer) can be removed, leaving only the single crystal Group III-nitride (that grew over the exposed substrate material).

    摘要翻译： 形成选择的III族氮化物区域的方法使用掩模层来引起单晶III族氮化物材料和多晶III族氮化物材料之间的差异生长。 选择外延工艺以提供垂直生长，以允许掩模边缘在所选择的区域的限定的范围内复制。 通过使用在多晶和单晶III族氮化物材料之间选择性的蚀刻剂，可以去除多晶材料（在掩模层上生长的），仅留下单晶III族氮化物（在暴露的基底材料上生长 ）。

    Mounting technology for intersubband light emitters
    9.
    发明授权
    Mounting technology for intersubband light emitters 有权
    子带发射器的安装技术

    公开(公告)号：US06326646B1

    公开(公告)日：2001-12-04

    申请号：US09448929

    申请日：1999-11-24

    申请人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L3300

    CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/0425 ,  H01S5/2275 ,  H01S5/3402

    摘要： A mounting technology that increases the cw operating temperature of intersubband lasers, without increasing the risk of hot spots near the facets and short circuits near the perimeter of the laser chip, is described. In accordance with one embodiment of our invention, a method of fabricating a intersubband semiconductor laser comprises the steps of providing a single crystal semiconductor substrate, forming on the substrate an epitaxial region that includes a core region and an intersubband active region in the core region, forming front and back facets that define an optical cavity resonator, forming a metal electrode on the epitaxial region so as to provide an electrical connection to said active region, and mounting said laser on a heat sink, characterized in that the mounting step includes the steps of (i) soldering the electrode to the heat sink so that the front facet overhangs an edge of the heat sink and (ii) cleaving off the overhanging portion of the laser so as to form a new front facet that is essentially flush with the edge of said heat sink. In accordance with another embodiment, our invention is further characterized in that metal electrode to the epitaxial region is recessed from the edges of the laser chip. In accordance with yet another embodiment, our invention is further characterized in that the back facet of the laser is coated so that any solder that might tend to creep onto the back facet contacts the coating and not semiconductor material (in particular the ends of the active region).

    摘要翻译： 描述了增加带间激光器的cw工作温度的安装技术，而不增加靠近激光芯片周边的面和短路附近的热点的风险。 根据本发明的一个实施例，一种制造子带间半导体激光器的方法包括以下步骤：提供单晶半导体衬底，在衬底上形成包含核心区域和芯区域中的子带间有源区域的外延区域， 形成限定光腔谐振器的前和后刻面，在所述外延区域上形成金属电极，以提供与所述有源区域的电连接，以及将所述激光器安装在散热器上，其特征在于，所述安装步骤包括步骤 （i）将电极焊接到散热器，使得前刻面突出于散热器的边缘，并且（ii）从激光器的悬垂部分分离，以形成基本上与边缘齐平的新的前刻面 的所述散热器。 根据另一个实施例，本发明的特征还在于，到外延区域的金属电极从激光芯片的边缘凹进。 根据又一个实施例，本发明的特征还在于，激光器的后面被涂覆，使得任何可能趋于蠕变到背面上的焊料与涂层接触而不是半导体材料（特别是活性物质的端部） 地区）。