公开(公告)号：US20250054737A1

公开(公告)日：2025-02-13

申请号：US18231655

申请日：2023-08-08

Applicant: Applied Materials, Inc.

Inventor： Karthik ELUMALAI ,  Ananthkrishna JUPUDI ,  Arunkumar TATTI ,  Cheng SUN ,  Ye LIU

IPC: H01J37/32

Abstract: Embodiments of substrate supports having electrostatic chucks (ESCs) for use in substrate process chambers are provided herein. In some embodiments, a substrate support includes: an electrostatic chuck (ESC) having a top surface and a plurality of mesas extending upward from the top surface, wherein an upper surface of the plurality of mesas define a substrate support surface, wherein a total surface area of the substrate support surface is about 18 to about 40 percent a total surface area of the upper surface, and wherein the ESC includes a plurality of backside gas openings extending through the ESC; and one or more chucking electrodes disposed in the ESC.

公开(公告)号：US20160353522A1

公开(公告)日：2016-12-01

申请号：US15165377

申请日：2016-05-26

Applicant: APPLIED MATERIALS, INC.

Inventor： SAKET RATHI ,  Ananthkrishna JUPUDI ,  Mukund SUNDARARAJAN ,  Manjunath Handenahalli VENKATASWAMAPPA

IPC: H05B1/02 ,  H05B6/80 ,  H05B6/64 ,  F27B5/04 ,  F27B5/14

CPC classification number: H05B6/80 ,  F27B5/04 ,  F27B5/14 ,  H05B6/6402 ,  H05B6/6447 ,  H05B6/645

Abstract: In some embodiments, a process chamber for a microwave batch curing process includes: an annular body having an outer surface and an inner surface defining a central opening of the annular body, wherein the inner surface comprises a plurality of angled surfaces defining a first volume; a first lip extending radially outward from the outer surface of the annular body proximate a first end of the annular body; a second lip extending radially outward from the outer surface of the annular body proximate a second end of the annular body; an exhaust disposed between the first lip and the second lip and fluidly coupled to the first volume, wherein the exhaust comprises a plurality of first openings; a plurality of second openings fluidly coupled to the first volume, wherein the plurality of second openings are configured to expose the first volume to microwave energy; and one or more ports fluidly coupled to the first volume.

Abstract translation: 在一些实施例中，用于微波批量固化方法的处理室包括：环形体，其具有外表面和限定环形体的中心开口的内表面，其中内表面包括限定第一体积的多个倾斜表面; 靠近所述环形体的第一端从所述环形体的外表面径向向外延伸的第一唇缘; 靠近所述环形体的第二端从所述环形体的外表面径向向外延伸的第二唇缘; 布置在所述第一唇缘和所述第二唇缘之间并且流体地联接到所述第一体积的排气口，其中所述排气口包括多个第一开口; 多个第二开口，其流体地联接到所述第一容积，其中所述多个第二开口被配置为将所述第一容积暴露于微波能量; 以及流体地联接到第一容积的一个或多个端口。

公开(公告)号：US20240395514A1

公开(公告)日：2024-11-28

申请号：US18202335

申请日：2023-05-26

Applicant: Applied Materials, Inc.

Inventor： Prashant AGARWAL ,  Junqi WEI ,  Ananthkrishna JUPUDI ,  Clinton GOH ,  Tuck Foong KOH ,  Kai Liang LIEW

IPC: H01J37/32 ,  C23C14/02 ,  C23C14/34 ,  C23C14/54 ,  C23C14/56 ,  C23C14/58 ,  H01L21/324 ,  H01L21/67 ,  H05B6/80

Abstract: Embodiments of multi-chamber processing tools are provided herein. In some embodiments, a multi-chamber processing tool includes: a factory interface configured to receive a substrate; a pre-heat chamber directly coupled to the factory interface; a load lock chamber coupled to the factory interface and having a first slit valve disposed therebetween, wherein the load lock chamber is coupled to a pump configured to create a vacuum environment when the first slit valve is in a closed position; a degas chamber coupled to the factory interface and having a second slit valve, wherein the degas chamber is coupled to a second pump configured to create a vacuum environment when the second slit valve is in a closed position, and wherein the degas chamber includes a heat source; one or more process chambers; and a transfer chamber coupled to the load lock chamber, the degas chamber, and the one or more process chambers.

公开(公告)号：US20230086151A1

公开(公告)日：2023-03-23

申请号：US17483085

申请日：2021-09-23

Applicant: Applied Materials, Inc.

Inventor： Tuck Foong KOH ,  Ananthkrishna JUPUDI ,  Prashant AGARWAL

IPC: H01L21/67 ,  H01L21/66 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises performing a first vacuum processing procedure on a substrate, obtaining temperature measurements of the substrate from a vacuum thermocouple, obtaining temperature measurements of the substrate from a non-contact infrared sensor, calibrating the non-contact infrared sensor based on the temperature measurements from the vacuum thermocouple and the temperature measurements from the non-contact infrared sensor, and performing a second vacuum processing procedure on the substrate using the calibrated non-contact infrared sensor.

公开(公告)号：US20210335581A1

公开(公告)日：2021-10-28

申请号：US16855559

申请日：2020-04-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Sarath BABU ,  Ananthkrishna JUPUDI ,  Yueh Sheng OW ,  Junqi WEI ,  Kelvin Tai Ming BOH ,  Kang ZHANG ,  Yuichi WADA

IPC: H01J37/32

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

公开(公告)号：US20140042016A1

公开(公告)日：2014-02-13

申请号：US14054477

申请日：2013-10-15

Applicant: Applied Materials, Inc.

Inventor： Yong CAO ,  Xianmin TANG ,  Srinivas GANDIKOTA ,  Wei D. WANG ,  Zhendong LIU ,  Kevin MORAES ,  Muhammad M. RASHEED ,  Thanh X. NGUYEN ,  Ananthkrishna JUPUDI

IPC: H01L21/28 ,  H01L21/285

CPC classification number: H01L21/28079 ,  C23C14/165 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28088 ,  H01L21/2855 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract translation: 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

公开(公告)号：US20220069536A1

公开(公告)日：2022-03-03

申请号：US17009851

申请日：2020-09-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Rajesh Kumar PUTTI ,  Vinodh RAMACHANDRAN ,  Ananthkrishna JUPUDI ,  Lean Wui KOH

IPC: H01S3/041 ,  H01S3/067 ,  H01S3/23 ,  H01S3/042

Abstract: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.

公开(公告)号：US20210172806A1

公开(公告)日：2021-06-10

申请号：US17073733

申请日：2020-10-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Ananthkrishna JUPUDI ,  Sai Kumar KODUMURI ,  Vinodh RAMACHANDRAN ,  Prashant AGARWAL ,  Hadi Bin Amir MUHAMMAD

IPC: G01K1/16 ,  G01K1/14 ,  G01K13/00

Abstract: An apparatus for determining temperatures of substrates in microwave and/or vacuum environments. A substrate holder with a plurality of support pins includes a temperature sensor assembly with at least a portion of a surface with a phosphorous coating is configured to be inserted in at least one pin support position from an inner area of the substrate holder and in at least one pin support position from an outer area of the substrate holder. The temperature sensor assembly includes a temperature sensor pin with a spring that is microwave transparent. The temperature sensor pin is made of a material with a thermal conductivity greater than approximately 200 W/mK and a low thermal mass which is microwave transparent. An optical transmission assembly is embedded into at least a portion of the substrate holder to receive light emissions from a surface of the temperature sensor pin.

公开(公告)号：US20210001520A1

公开(公告)日：2021-01-07

申请号：US16919736

申请日：2020-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Tuck Foong KOH ,  Chien-Kang HSIUNG ,  Yueh Sheng OW ,  Felix DENG ,  Yue CUI ,  Nuno Yen-Chu CHEN ,  Ananthkrishna JUPUDI ,  Clinton GOH ,  Vinodh RAMACHANDRAN

IPC: B29C35/08 ,  H05B6/80 ,  H05B6/70 ,  H05B6/68

Abstract: Methods and apparatus for curing a substrate or polymer using variable microwave frequency are provided herein. In some embodiments, a method of curing a substrate or polymer using variable microwave frequency includes: contacting a substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer.

公开(公告)号：US20200176290A1

公开(公告)日：2020-06-04

申请号：US16783702

申请日：2020-02-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Preetham P. RAO ,  Ananthkrishna JUPUDI

IPC: H01L21/67 ,  G01K11/32 ,  H01L21/687 ,  H01L21/66 ,  G01K11/20

Abstract: Methods and apparatus for measuring the temperature of epoxy resin in an electronics package are provided herein. In some embodiments, apparatus for encapsulating an electronics package includes: a process chamber having a chamber body enclosing a processing volume; a substrate support having a support surface for receiving and supporting a substrate for forming an electronics package; and a temperature sensor to measure a temperature of an epoxy resin in an electronics package. The temperature sensor includes: an input apparatus including at least a light source disposed outside the chamber body to provide an excitation light energy to a portion of the epoxy resin; and an output apparatus including at least a signal analyzer disposed outside the chamber body to detect fluorescent light energy emitted by the portion of the epoxy resin and determine a temperature of the epoxy resin based on the excitation light energy and the fluorescent light energy.