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    Method of forming transparent contacts to a p-type GaN layer
    2.
    发明授权
    Method of forming transparent contacts to a p-type GaN layer 有权
    与p型GaN层形成透明接触的方法

    公开(公告)号：US06287947B1

    公开(公告)日：2001-09-11

    申请号：US09327948

    申请日：1999-06-08

    申请人： Michael J. Ludowise ,  Steven A. Maranowski ,  Daniel A. Steigerwald ,  Jonathan Joseph Wierer, Jr.

    发明人： Michael J. Ludowise ,  Steven A. Maranowski ,  Daniel A. Steigerwald ,  Jonathan Joseph Wierer, Jr.

    IPC分类号： H01L2128

    CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L2933/0016 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

    摘要： A method of forming a light-transmissive contact on a p-type Gallium nitride (GaN) layer of an optoelectronic device includes in one embodiment, introducing a selected metal in an oxidized condition, rather than oxidizing the metal only after it has been deposited on the surface of the p-type GaN layer. In some applications, the oxidized metal provides sufficient lateral conductivity to eliminate the conventional requirement of a second highly conductive contact metal, such as gold. If the second contact metal is desired, an anneal in an oxygen-free environment is performed after deposition of the second layer. The anneal causes the second metal to penetrate the oxidized metal and to fuse to the surface of the p-type GaN layer. In a second embodiment, the oxidation occurs only after at least one of the two metals is deposited on the surface of the p-type GaN layer. In one application of the second embodiment, the two metals are deposited and the oxidation occurs in an environment that includes both water vapor and oxygen gas. In an alternative application of the second embodiment, the first metallic layer is deposited and then oxidized throughout its depth. The second material, such as gold, is evaporated on the first material and a re-anneal step is performed to drive the second metal through the oxidized first metal. In any of the applications of either embodiment, a pattern of windows may be formed in the resulting contact structure or in additional layers that are formed thereon.

    摘要翻译： 在光电子器件的p型氮化镓（GaN）层上形成透光接触的方法包括在一个实施方案中，将所选择的金属引入氧化条件，而不是仅在其沉积之后氧化金属 p型GaN层的表面。 在一些应用中，氧化金属提供足够的横向传导性以消除第二高导电性接触金属（例如金）的常规要求。 如果需要第二接触金属，则在沉积第二层之后执行在无氧环境中的退火。 退火使第二金属穿透氧化金属并熔合到p型GaN层的表面。 在第二实施方案中，仅在两种金属中的至少一种沉积在p型GaN层的表面上之后才发生氧化。 在第二实施例的一个应用中，沉积了两种金属，并且在包括水蒸气和氧气的环境中发生氧化。 在第二实施例的替代应用中，第一金属层被沉积​​，然后在整个深度被氧化。 第二种材料，例如金，在第一种材料上被蒸发，并且进行再退火步骤以通过氧化的第一金属驱动第二金属。 在任一实施例的任何应用中，可以在所得到的接触结构中或在其上形成的附加层中形成窗口图案。

    Light emitting semiconductor method and device
    3.
    发明授权
    Light emitting semiconductor method and device 有权
    发光半导体方法及器件

    公开(公告)号：US06946685B1

    公开(公告)日：2005-09-20

    申请号：US09652194

    申请日：2000-08-31

    申请人： Daniel A. Steigerwald ,  Michael J. Ludowise ,  Steven A. Maranowski ,  Serge L. Rudaz ,  Jerome C. Bhat

    发明人： Daniel A. Steigerwald ,  Michael J. Ludowise ,  Steven A. Maranowski ,  Serge L. Rudaz ,  Jerome C. Bhat

    IPC分类号： H01L29/22 ,  H01L33/32 ,  H01L33/40

    CPC分类号： H01L33/405 ,  H01L33/32

    摘要： Silver electrode metallization in light emitting devices is subject to electrochemical migration in the presence of moisture and an electric field. Electrochemical migration of the silver metallization to the pn junction of the device results in an alternate shunt path across the junction, which degrades efficiency of the device. In accordance with a form of this invention, a migration barrier is provided for preventing migration of metal from at least one of the electrodes onto the surface of the semiconductor layer with which the electrode is in contact.

    摘要翻译： 发光器件中的银电极金属化在水分和电场的存在下经历电化学迁移。 银金属化物到器件的pn结的电化学迁移导致跨接头的交替分流路径，这降低了器件的效率。 根据本发明的形式，提供了一种迁移屏障，用于防止金属从至少一个电极移动到与电极接触的半导体层的表面上。